Journal of Crystal Growth

Journal of Crystal Growth, Vol.353, No.1 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (33 articles)

1 - 4	Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography Bengoechea-Encabo A, Albert S, Sanchez-Garcia MA, Lopez LL, Estrade S, Rebled JM, Peiro F, Nataf G, de Merry P, Zuniga-Perez J, Calleja E
5 - 11	Structural changes in precipitates and cell model for the conversion of amorphous calcium phosphate to hydroxyapatite during the initial stage of precipitation Zyman Z, Rokhmistrov D, Glushko V
12 - 16	Optimizing seeded casting of mono-like silicon crystals through numerical simulation Black A, Medina J, Pineiro A, Dieguez E
17 - 24	Top-view approach for in-situ observation of growth morphology in bulk transparent organic alloys Witusiewicz VT, Hecht U, Rex S
25 - 30	Floating zone crystal growth and magnetic properties of bilayer manganites Pr(Sr1-xCax)(2)Mn2O7 Deng GC, Thiyagarajan R, Radheep DM, Pomjakushina E, Medarde M, Krzton-Maziopa A, Wang S, Arumugam S, Conder K
31 - 34	Growth of Y123 bulk crystals in Y1.5Ba2Cu3Ox system with CeO2 addition Volochova D, Diko P, Radusovska M, Antal V, Piovarci S, Zmorayova K, Sefcikova M
35 - 38	Effect of surface defects on InGaAs/InAlAs Quantum Cascade mesa current-voltage characteristics Aung NL, Huang X, Charles WO, Yao N, Gmachl CF
39 - 46	Ga-assisted MBE growth of GaAs nanowires using thin HSQ layer Rieger T, Heiderich S, Lenk S, Lepsa MI, Grutzmacher D
47 - 54	Investigation on structural, optical, morphological and electrical properties of thermally deposited lead selenide (PbSe) nanocrystalline thin films Shyju TS, Anandhi S, Sivakumar R, Garg SK, Gopalakrishnan R
55 - 58	Study on defect properties of nanocrystalline TiO2 during phase transition by positron annihilation lifetime Zheng F, Liu Y, Liu Z, Dai YQ, Fang PF, Wang SJ
59 - 62	Enhanced growth rate for ammonothermal gallium nitride crystal growth using ammonium iodide mineralizer Tomida D, Kagamitani Y, Bao Q, Hazu K, Sawayama H, Chichibu SF, Yokoyama C, Fukuda T, Ishiguro T
63 - 67	Growth of single-crystalline Cu2O (111) film on ultrathin MgO modified alpha-Al2O3 (0001) substrate by molecular beam epitaxy Li JQ, Mei ZX, Ye DQ, Liang HL, Liu YP, Du XL
68 - 71	Imaging extended non-homogeneities in HVPE grown GaN with Kelvin Probe Microscopy and photo-etching Nowak G, Weyher JL, Khachapuridze A, Grzegory I
72 - 76	Growth and characterization of Nd:LGGG laser crystal Fu XW, Jia ZT, Li YB, Yuan DS, Dong CM, Tao XT
77 - 82	Optical and morphological study of misoriented GaAs substrates exposed to bismuth flow using in situ spectral reflectance and atomic force microscopy Massoudi I, Habchi MM, Rebey A, El Jani B
83 - 83	The effect of solvent ratio and water on the growth of C-60 nanowhiskers (vol 312, pg 2764, 2010) Miyazawa K, Hotta K
84 - 87	Analysis of thickness modulation in GaAs/GaAsP strained superlattice by TEM observation Jin XG, Nakahara H, Saitoh K, Saka T, Ujihara T, Tanaka N, Takeda Y
88 - 94	Formation of V-grooves on the (Al,Ga)N surface as means of tensile stress relaxation Cheng K, Leys M, Degroote S, Bender H, Favia P, Borghs G, Germain M
95 - 100	Enhancement of structural perfection of alkali halide single crystals by doping with copper Daniel DJ, Ramasamy P, Madhusoodanan U, Bhagavannarayana G
101 - 107	Fabrication of BaCO3 sheaves tailored by carboxymethyl cellulose under compressed CO2 Shen DP, Li W, Xu SJ, Wu PY
108 - 114	Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameters Vennegues P, Diaby BS, Kim-Chauveau H, Bodiou L, Schenk HPD, Frayssinet E, Martin RW, Watson IM
115 - 119	Multi-technique analysis of high quality HPHT diamond crystal Fernandez-Lorenzo C, Araujo D, Gonzalez-Manas M, Martin J, Navas J, Alcantara R, Villar MP, Bagriantsev D
120 - 123	Direct observation of extended dislocation in Cd0.9Zn0.1Te single crystals by HRTEM Sun J, Fu L
124 - 128	Temperature dependence of crystalline SiGe growth on sapphire (0001) substrates by sputtering Kim HJ, Bae HB, Park Y, Lee K, Choi SH
129 - 133	HVPE of AlxGa1-xN layers on planar and trench patterned sapphire Hagedorn S, Richter E, Zeimer U, Prasai D, John W, Weyers M
134 - 139	The structure and electronic properties of AlN/SrTiO3 (111) interfaces Wang JL, Tang G, Wu XS, Gu MQ
140 - 144	Transport properties of Sb-doped Si nanowires Nukala P, Sapkota G, Gali P, Philipose U
145 - 151	Influence of impurities on the crystallization of dextrose monohydrate Markande A, Nezzal A, Fitzpatrick J, Aerts L, Redl A
152 - 157	Thick orientation-patterned GaAs grown by low-pressure HVPE on fusion-bonded templates Lynch C, Bliss DF, Snure M, Tassev V, Bryant G, Yapp C, Fenner DB, Allen MG, Termkoa K, Li J, Vangala S, Goodhue W
158 - 161	Vertical gradient freeze growth of ZnGeP2 crystals for nonlinear optical applications Wu HX, Wang ZY, Ni YB, Mao MS, Huang CB, Cheng XD
162 - 167	Growth and characterization of Cr-doped semi-insulating GaN templates prepared by radio-frequency plasma-assisted molecular beam epitaxy Mei F, Yang ZJ, Xu JX, Wu LZ, Wu TZ, Zhang DM
168 - 173	Morphology prediction of crystals grown in the presence of impurities and solvents - An evaluation of the state of the art Schmidt C, Ulrich J
174 - 176	Diffusion boundary condition at surface steps Niu XB, Huang HC