화학공학소재연구정보센터

Journal of Crystal Growth

Journal of Crystal Growth, Vol.522 Entire volume, number list
ISSN: 0022-0248 (Print) 

In this Issue (33 articles)

1 - 4 Synthesis and characterization of lanthanum chloride doped L-alanine maleate single crystals
Fentaw DA, Peter ME, Abza T
5 - 10 The regulating effect of cooling water temperature on the axial growth rate of large single crystal diamond under HPHT conditions
Li YD, Wang FB, Wang CX, Chen LC, Guo LS, Fang C
11 - 15 Regrown source/drain in InGaAs multi-gate MOSFETs
Miyamoto Y, Kanazawad T, Kise N, Kinoshita H, Ohsawa K
16 - 24 Pure SnSe, In and Sb doped SnSe single crystals - Growth, structural, surface morphology and optical bandgap study
Patel S, Chaki SH, Vinodkumar PC
25 - 29 Epitaxial growth and characterization of Cd1-xMnx Te films on Si(111) substrates
Ghosh S, Rodrigues LN, Moura LG, Ferreira SO
30 - 36 Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio
Anandan D, Nagarajan V, Kakkerla RK, Yu HW, Ko HL, Singh SK, Lee CT, Chang EY
37 - 44 Equilibrium and growth facetted shapes in isothermal solidification of silicon: 3D phase-field simulations
Boukellal AK, Elvalli AKS, Debierre JM
45 - 52 Alkali-treated starches as a new class of templates for CaCO3 spherulite formation: Experimental and theoretical studies
Prajongtat P, Saparpakorn P, Asamo S, Hongsprabhas P, Israkarn K
53 - 60 Crystallization in small droplets: Competition between homogeneous and heterogeneous nucleation
Kozisek Z
61 - 67 Hydrothermal preparation and luminescence properties of Ca9Y(PO4)(7):Eu2+, Mn2+ nanocrystals
Zhang HL, Yu XF, Sun HY, Mi XY, Zhou HY, Zhang XY, Bai ZH
68 - 77 Metalorganic vapor phase epitaxy of pit-free AlN homoepitaxial films on various semipolar substrates
Ichikawa S, Funato M, Kawakami Y
78 - 85 Effects of solidification parameters and magnetic field on separation of primary silicon from hypereutectic Ti-85 wt.% Si melt
Zhu KS, Hu JF, Ma WH, Wei KX, Lv TL, Dai YN
86 - 91 Deposition of germanium film on monocrystalline silicon substrate with cut-off angle
Chen M, Chen NF, Tao QL, Chang ZW, Chen JK
92 - 102 An in vitro evaluation of the effects of Urtica dioica and Fructus Urtica Piluliferae extracts on the crystallization of calcium oxalate
Polat S
103 - 109 Investigation on thermally induced crystallization processes in glassy (As2Se3)(100-x)(SbSI)(x) system
Skuban F, Siljegovic MV, Skuban SJ, Lukic-Petrovic SR
110 - 116 Growth and physical properties of BiFeO3 thin films directly on Si substrate
Yao XK, Wang C, Tian SL, Zhou Y, Li XM, Ge C, Guo EJ, He M, Bai XD, Gao P, Yang GZ, Jin KJ
117 - 124 Secondary phase formation by liquid immiscibility in Ca3Ta(Ga1-xAlx)Si2O14 melt
Honda Y, Niinomi H, Nozawa J, Okada J, Uda S
125 - 127 Molecular beam epitaxy growth of InAs/AlSb superlattices on GaAs substrates
Benyahia D, Kubiszyn L, Michalczewski K, Keblowski A, Grodecki K, Martyniuk P
128 - 138 Modeling of multistep Ca2+ transfer in the carbonation system of CO2-NH4OH-CaSO4 center dot 2H(2)O-CaCO3
Gong Y, Wu L, Li J, Zhu JH
139 - 150 Kinetic Monte Carlo simulations of coverage effect on Ag and Au monolayers growth on Cu (110)
Dardouri M, Hassani A, Hasnaoui A, Arbaoui A, Boughaleb Y, Sbiaai K
151 - 159 Production of high performance multi-crystalline silicon ingots for PV application by using contamination-free SixNy seed particles
Schwanke S, Trempa M, Reimann C, Kuczynski M, Schroll G, Sans J, Friedrich J
160 - 174 Heterogeneous and homogeneous hydrate nucleation in CO2/water systems
Kvamme B, Aromada SA, Saeidi N
175 - 182 Synthesis of iron sulfide thin films and powders from new xanthate precursors
Almanqur L, Alam F, Whitehead G, Vitorica-yrezabal I, OBrien P, Lewis DJ
183 - 190 Phase field simulation of dendrite sidebranching during directional solidification of Al-Si alloy
Zhang B, Zhao Y, Chen W, Xu Q, Wang M, Hou H
191 - 194 Experimental and numerical investigation of laboratory crystal growth furnace for the development of model-based control of CZ process
Bergfelds K, Pudzs M, Sabanskis A, Virbulis J
195 - 203 Optimization of the controlling recipe in quasi-single crystalline silicon growth using artificial neural network and genetic algorithm
Dang YF, Liu LJ, Li ZY
204 - 209 Growth of narrow substrate temperature window on the crystalline quality of InN epilayers on AlN/Si(111) substrates using RF-MOMBE
Chen WC, Chen HP, Lin YW, Liu DR
210 - 213 Heteroepitaxial growth of nonlinear optical materials for frequency conversion in the mid and longwave IR
Tassev VL, Vangala SR, Tomich D, Dass C
214 - 220 The highly crystalline tellurium doped ZnO nanowires photodetector
Khosravi-Nejad F, Teimouri M, Marandi SJ, Shariati M
221 - 229 Directional solidification of gallium under time-dependent magnetic fields with in situ measurements of the melt flow and the solid-liquid interface
Thieme N, Keil M, Meier D, Bonisch P, Dadzis K, Patzold O, Stelter M, Buttner L, Czarske J
230 - 234 Thick hydride vapor phase epitaxial growth of ZnSe on GaAs (100) vicinal and orientation patterned substrates
Vangala SR, Brinegar D, Tassev VL, Snure M
235 - 235 Particle engulfment dynamics under oscillating crystal growth conditions (vol 468, pg 24, 2017)
Tao YT, Sorgenfrei T, Jauss T, Croll A, Reimann C, Friedrich J, Derby JJ
236 - 236 Analysis of the traveling heater method for the growth of cadmium telluride (vol 454, pg 45, 2016)
Peterson JH, Yeckel A, Fiederle M, Derby JJ