Journal of Crystal Growth

Journal of Crystal Growth, Vol.510 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (14 articles)

1 - 6	Investigation of pinholes in Czochralski silicon ingots in relation to structure loss Sortland OS, Ovrelid EJ, M'Hamdi M, Di Sabatino M
7 - 12	Absolute surface energies of semipolar planes of AlN during metalorganic vapor phase epitaxy growth Seta Y, Akiyama T, Pradipto AM, Nakamura K, Ito T
13 - 17	Fabrication of AlN templates on SiC substrates by sputtering-deposition and high-temperature annealing Uesugi K, Hayashi Y, Shojiki K, Xiao SY, Nagamatsu K, Yoshida H, Miyake H
18 - 22	InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOVPE for the fabrication of InAs FINFET Cerba T, Hauchecorne P, Martin M, Moeyaert J, Alcotte R, Salem B, Eustache E, Bezard P, Chevalier X, Lombard G, Bassani F, David S, Beainy G, Tournie E, Patriarche G, Boutry H, Bawedin M, Baron T
23 - 27	Influence of extended crystallographic defects on the formation kinetics of oxygen-related thermal donors in multicrystalline silicon Bounab R, Veirman J, Albaric M, Bailly S, Marie B, Pihan E
28 - 31	Crucible melt-out via monitoring thermal arrest Chandler C, McClellan KJ
32 - 39	The effect of anisotropic surface tension on interfacial evolution of a particle in the binary alloy melt Chen MW, Wang YX, Guo HM
40 - 46	Spinodal decomposition and composition modulation effect at the low-temperature synthesis of A(x)(3)B(1-x)(3)C(5) semiconductor solid solutions Moskvin PP, Skurativskyi SI, Kravchenko OP, Skyba GV, Shapovalov HV
47 - 49	Evaluation of GaN/AlGaN THz quantum-cascade laser epi-layers grown on AlGaN/Si templates by MOCVD Fujikawa S, Ishiguro T, Wang K, Terashima W, Fujishiro H, Hirayama H
50 - 55	Growth behavior of wafer-scale two-dimensional MoS2 layer growth using metal-organic chemical vapor deposition Kwak T, Lee J, So B, Choi U, Nam O
56 - 64	Growth of self-assembled and position-controlled InN nanowires on Si (111) by molecular beam epitaxy Weiszer S, Zeidler A, de la Mata M, Stutzmann M
65 - 75	SiGe films and graded buffers grown by liquid phase epitaxy from different growth solution compositions Wang J, Quitoriano NJ
76 - 84	Heteroepitaxial growth of alpha-, beta-, gamma- and kappa-Ga2O3 phases by metalorganic vapor phase epitaxy Gottschalch V, Merker S, Blaurock S, Kneiss M, Teschner U, Grundmann M, Krautscheid H
85 - 85	Preface Lu M