1 - 5 |
Growth and luminescent properties of Ce and Eu doped Cesium Hafnium Iodide single crystalline scintillators Kodama S, Kurosawa S, Yamaji A, Pejchal J, Kral R, Ohashi Y, Kamada K, Yokota Y, Nikl M, Yoshikawa A |
6 - 12 |
Numerical modeling of Czochralski growth of Li2MoO4 crystals for heat-scintillation cryogenic bolometers Stelian C, Velazquez M, Veber P, Ahmine A, Sand JB, Buse G, Cabane H, Duffar T |
13 - 17 |
Transition mechanism of the reaction interface of the thermal decomposition of calcite Li Z, Zhao Z, Wang Q, Wang GC |
18 - 23 |
Towards graphite-free hot zone for directional solidification of silicon Dropka N, Buchovska I, Herrmann-Geppert I, Klimm D, Kiessling FM, Degenhardt U |
24 - 28 |
High-pressure-assisted synthesis of high-volume ZnGeP2 polycrystalline Huang CB, Wu HX, Xiao RC, Chen SJ, Ma JR |
29 - 34 |
Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy Zheng J, Liu Z, Zhang YW, Zuo YH, Li CB, Xue CL, Cheng BW, Wang QM |
35 - 38 |
High-quality single crystal growth and magnetic property of Mn4Ta2O9 Cao YM, Xu K, Yang Y, Yang WF, Zhang YL, Kang YR, He XJ, Zheng AM, Liu M, Wei SX, Li Z, Cao SX |
39 - 44 |
Comparison of O-2 and H2O as oxygen source for homoepitaxial growth of beta-Ga2O3 layers by halide vapor phase epitaxy Konishi K, Goto K, Togashi R, Murakami H, Higashiwaki M, Kuramata A, Yamakoshi S, Monemar B, Kumagai Y |
45 - 49 |
Single crystal growth of submillimeter diameter sapphire tube by the micro-pulling down method Kamada K, Murakami R, Kochurikhin VV, Luidmila G, Kim KJ, Shoji Y, Yamaji A, Kurosawa S, Ohashi Y, Yokota Y, Yoshikawa A |
50 - 59 |
Segregation and microstructure evolution in chill cast and directionally solidified Ni-Mn-Sn metamagnetic shape memory alloys Czaja P, Wierzbicka-Miernik A, Rogal L |
60 - 66 |
Molecular dynamics simulation of temperature effects on deposition of Cu film on Si by magnetron sputtering Zhu G, Sun JP, Zhang LB, Gan ZY |
67 - 70 |
Melt growth of zinc aluminate spinel single crystal by the micro-pulling down method under atmospheric pressure Kamada K, Shoji Y, Yamaji A, Kurosawa S, Yokota Y, Ohashi Y, Kim KJ, Ivanov M, Kochurikhin VV, Yoshikawa A |
71 - 76 |
Fabrication of InAs quantum ring nanostructures on GaSb by droplet epitaxy Dahiya V, Zamiri M, So MG, Hollingshead DA, Kim J, Krishna S |
77 - 83 |
TEM investigations on twin boundary structures of feathery crystals in aluminum alloys during Bridgman solidification Yang LY, Li SM, Fan K, Li Y, Zhong H, Fu HZ |
84 - 91 |
Aluminate effect on desilication product phase transformation Peng H, Vaughan J |
92 - 97 |
Morphology and kinetics of crystals growth in amorphous films of Cr2O3, deposited by laser ablation Bagmut A |
98 - 104 |
Structural analysis of benzothienobenzothiophene-based soluble organic semiconducting crystals grown by liquid crystal solvent Shibata Y, Matsuzaki T, Ishinabe T, Fujikake H |
105 - 113 |
A first-principle model of 300 mm Czochralski single-crystal Si production process for predicting crystal radius and crystal growth rate Zheng ZC, Seto T, Kim S, Kano M, Fujiwara T, Mizuta M, Hasebe S |
114 - 121 |
The crystallization kinetic model of nano-CaCO3 in CO2-ammonia-phosphogypsum three-phase reaction system Liu H, Lan PQ, Lu SQ, Wu SF |
122 - 131 |
High-yield synthesis of vaterite microparticles in gypsum suspension system via ultrasonic probe vibration/magnetic stirring Wang B, Pan ZH, Cheng HG, Chen ZL, Cheng FQ |