Journal of Crystal Growth

Journal of Crystal Growth, Vol.483 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (49 articles)

1 - 8	Numerical modeling study on the epitaxial growth of silicon from dichlorosilane Zaidi I, Jang YH, Ko DG, Im IT
9 - 15	Solid state single crystal growth of three-dimensional faceted LaFeAsO crystals Kappenberger R, Aswartham S, Scaravaggi F, Blum CGF, Sturza MI, Wolter AUB, Wurmehl S, Buchner B
16 - 25	Crystal growth, physical properties and computational insights of semi-organic non-linear optical crystal diphenylguanidinium perchlorate grown by conventional solvent evaporation method Kajamuhideen MS, Sethuraman K, Ramamurthi K, Ramasamy P
26 - 30	Optimization of the interfacial misfit array growth mode of GaSb epilayers on GaAs substrate Benyahia D, Kubiszyn L, Michalczewski K, Keblowski A, Martyniuk P, Piotrowski J, Rogalski A
31 - 38	Potassium-cobalt sulphate crystal growth assisted by low frequency vibrations Sadovsky A, Ermochenkov I, Dubovenko E, Sukhanova E, Bebyakin M, Dubov V, Avetissov I
39 - 43	Ultraviolet emission from MgZnO films and ZnO/MgZnO single quantum wells grown by pulsed laser deposition Wang X, Chen ZW, Hu CY, Saito K, Tanaka T, Nishio M, Guo QX
44 - 51	Hydrothermal synthesis and photoluminescent properties of hierarchical GdPO4 center dot H2O:Ln(3+) (Ln(3+) = Eu3+, Ce3+, Tb3+) flower-like clusters Amurisana B, Song ZQ, Haschaolu O, Chen Y, Tegus O
52 - 56	Ice crystal growth under the presence of krypton and methane at low temperature Kawauchi T, Yoda Y, Fukutani K
57 - 64	Characterization of high-quality kerfless epitaxial silicon for solar cells: Defect sources and impact on minority-carrier lifetime Kivambe MM, Powell DM, Castellanos S, Jensen MA, Morishige AE, Lai B, Hao RY, Ravi TS, Buonassisi T
65 - 80	Numerical simulations of porous medium with different permeabilities and positions in a laterally-heated cylindrical enclosure for crystal growth Enayati H, Braun MJ, Chandy AJ
81 - 88	Phase-pure eutectic CoFe2O4-Ba1-xSrxTiO3 composites prepared by floating zone melting Breitenbach M, Ebbinghaus SG
89 - 93	High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors Charles M, Baines Y, Bavard A, Bouveyron R
94 - 101	Investigation of effective annealing on CdMnTe:In crystals with different thickness for gamma-ray detectors Yu PF, Xu YD, Chen YR, Song J, Zhu Y, Zhang MJ, Zhang BG, Wanga Y, Li W, Luan LJ, Du YY, Ma J, Zheng JH, Li Z, Bai M, Li H, Jie WQ
102 - 109	Synthesis of barium-strontium titanate hollow tubes using Kirkendall effect Chen XC, Im S, Kim J, Kim WS
110 - 114	Crystal growth, defects, mechanical, thermal and optical properties of Tb3Sc2Al3O12 magneto-optical crystal Ding SJ, Zhang QL, Liu WP, Luo JQ, Sun GH, Sun DL
115 - 120	Cubic boron phosphide epitaxy on zirconium diboride Padavala B, Al Atabi H, Tengdelius L, Lu J, Hogberg H, Edgar JH
121 - 124	Crystal growth and scintillation performance of Cs2HfCl6 and Cs2HfCl4Br2 Lam S, Guguschev C, Burger A, Hackett M, Motakef S
125 - 133	Computational analysis of heat transfer, thermal stress and dislocation density during resistively Czochralski growth of germanium single crystal Tavakoli MH, Renani EK, Honarmandnia M, Ezheiyan M
134 - 139	Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers Foronda HM, Wu F, Zollner C, Alif ME, Saifaddin B, Almogbel A, Iza M, Nakamura S, DenBaars SP, Speck JS
140 - 146	Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy Donchev V, Milanova M, Asenova I, Shtinkov N, Alonso-Alvarez D, Mellor A, Karmakov Y, Georgiev S, Ekins-Daukes N
147 - 155	Three-dimensional morphologies of inclined equiaxed dendrites growing under forced convection by phase-field-lattice Boltzmann method Sakane S, Takaki T, Ohno M, Shibuta Y, Shimokawabe T, Aoki T
156 - 163	Probing ice growth from vapor phase: A molecular dynamics simulation approach Mohandesi A, Kusalik PG
164 - 168	Reduction of oxygen concentration by heater design during Czochralski Si growth Zhou B, Chen WL, Li ZH, Yue RC, Liu GW, Huang XM
169 - 174	Investigation on synthesis, growth, structure and physical properties of AgGa0.5In0.5S2 single crystals for Mid-IR application Karunagaran N, Ramasamy P
175 - 182	Control of interface shape during high melting sesquioxide crystal growth by HEM technique Hu KW, Zheng LL, Zhang H
183 - 189	Spatial distribution of structural defects in Cz-seeded directionally solidified silicon ingots: An etch pit study Lantreibecq A, Legros M, Plassat N, Monchoux JP, Pihan E
190 - 194	Redshift and blueshift of GaNAs/GaAs multiple quantum wells induced by rapid thermal annealing Sun YJ, Cheng ZY, Zhou Q, Sun Y, Sun JB, Liu YH, Wang MF, Cao Z, Ye Z, Xu MS, Ding Y, Chen P, Heuken M, Egawa T
195 - 199	Control of optical properties of YAG crystals by thermal annealing Tkachenko S, Arhipov P, Gerasymov I, Kurtsev D, Vasyukov S, Nesterkina V, Shiran N, Mateichenko P, Sidletskiy O
200 - 205	Study on growth techniques and macro defects of large-size Nd: YAG laser crystal Quan JL, Yang X, Yang MM, Ma DC, Huang JQ, Zhu YZ, Wang B
206 - 210	In-situ growth mode control of AlN on SiC substrate by sublimation closed space technique Dojima D, Ashida K, Kaneko T
211 - 215	Advanced crystal growth techniques for thallium bromide semiconductor radiation detectors Datta A, Becla P, Guguschev C, Motakef S
216 - 222	MOVPE growth and transport characterization of Bi2-xSbxTe3-ySey films Kuznetsov PI, Yakushcheva GG, Shchamkhalova BS, Jitov VA, Temiryazev AG, Sizov VE, Yapaskurt VO
223 - 227	Reduction of threading dislocation density in SiGe epilayer on Si (001) by lateral growth liquid-phase epitaxy O'Reilly AJ, Quitoriano NJ
228 - 235	Au crystal growth on natural occurring Au-Ag aggregate elucidated by means of precession electron diffraction (PED) Rosell JR, Serra JP, Aiglsperger T, Plana-Ruiz S, Trifonov T, Proenza JA
236 - 240	P-type single-crystalline ZnO films obtained by (Na,N) dual implantation through dynamic annealing process Zhang ZY, Huang JY, Chen SS, Pan XH, Chen LX, Ye ZZ
241 - 244	Effect of controlled crucible movement on melting process and carbon contamination in Czochralski silicon crystal growth Liu X, Han XF, Nakano S, Kakimoto K
245 - 250	Growth method for A(III)B(V) and A(IV)B(VI) heterostructures Fedorchenko IV, Kushkov AR, Gaev DS, Rabinovich OI, Marenkin SF, Didenko SI, Legotin SA, Orlova MN, Krasnov AA
251 - 257	Investigating new activators for small-bandgap LaX3 (X = Br, I) scintillators Rutstrom D, Collette R, Stand L, Loyd M, Wu YT, Koschan M, Melcher CL, Zhuravleva M
258 - 264	Large-scale grain growth in the solid-state process: From "Abnormal" to "Normal" Jiang MH, Han SN, Zhang JW, Song JG, Hao CY, Deng MJ, Ge LJ, Gu ZF, Liu XY
265 - 268	Unzipping and movement of Lomer-type edge dislocations in Ge/GeSi/Si(001) heterostructures Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Sokolov LV
269 - 274	3D numerical simulation of free surface shape during the crystal growth of floating zone (FZ) silicon Han XF, Liu X, Nakano S, Harada H, Miyamura Y, Kakimoto K
275 - 280	Morphological instability of lamellar structures in directionally solidified Ni-Ni3Si alloys Wei LF, Zhao ZL, Gao JJ, Cui K, Guo JY, Chen S, Liu L
281 - 284	Modification of growth interface of CdZnTe crystals in THM process by ACRT Zhou BR, Jie WQ, Wang T, Yin LY, Yang F, Zhang BB, Xi SZ, Dong JP
285 - 290	Enhanced B doping in CVD-grown GeSn:B using B delta- doping layers Kohen D, Vohra A, Loo R, Vandervorst W, Bhargava N, Margetis J, Tolle J
291 - 296	Analytical solution of the problem of dissolved gas segregation in melt by the plain crystallization front Chernov AA, Pil'nik AA
297 - 300	Si impurity concentration in nominally undoped Al0.7Ga0.3N grown in a planetary MOVPE reactor Jeschke J, Knauer A, Weyers M
301 - 307	Exploring growth conditions and Eu2+ concentration effects for KSr2I5: Eu scintillator crystals II: empty set 25 mm crystals Stand L, Zhuravleva M, Johnson J, Koschan M, Wu Y, Donnald S, Vaigneur K, Lukosi E, Melcher CL
308 - 317	Solvent selection for explaining the morphology of nitroguanidine crystal by molecular dynamics simulation Song L, Chen LZZ, Cao DL, Wang JL
318 - 322	Growth and characterization of an Al-doped GaSe crystal Huang CB, Mao MS, Wu HX, Wang ZY, Ni YB