Journal of Crystal Growth

Journal of Crystal Growth, Vol.432 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (25 articles)

1 - 5	Synthesis, characterization, spectroscopy, and laser operation of SrMoO4 crystals co-doped with Tm3+ and Ho3+ Dunaeva EE, IvIeva LI, Doroshenko ME, Zverev PG, Nekhoroshikh AV, Osiko VV
6 - 14	Ab initio study of GaAs(100) surface stability over AS(2), H-2 and N-2 as a model for vapor-phase epitaxy of GaAs1-xNx Valencia H, Kangawa Y, Kakimoto K
15 - 18	Fabrication of InAs quantum dot stacked structure on InP(311)B substrate by digital embedding method Akahane K, Yamamoto N, Kawanishi T
19 - 23	Control of the crystal structure and electrical transport in undoped PbTe films grown by pulsed laser deposition Virt IS, Tur Y, Rudyi IO, Lopatynskyi IY, Frugynskyi MS, Kurilo IV, Lusakowska E, Witkowski BS, Luka G
24 - 32	Probing diffusion of In and Ga in CuInSe2/CuGaSe2 bilayer thin films by x-ray diffraction Namnuan B, Yoodee K, Chatraphorn S
33 - 36	Growth and characterization of Bi2-xSbxTe3 (x=0-0.2) single crystals Patel MM, Soni PH, Desai CF
37 - 44	Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm Li X, Le Gac G, Bouchoule S, El Gmili Y, Patriarche G, Sundaram S, Disseix P, Reveret F, Leymarie J, Streque J, Genty F, Salvestrini JP, Dupuis RD, Li XH, Voss PL, Ougazzaden A
45 - 48	Double acceptor in p-type GaAsN grown by chemical beam epitaxy Elleuch O, Wang L, Lee KH, Ikeda K, Kojima N, Ohshita Y, Yamaguchi M
49 - 53	Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals Pimputkar S, Suihkonen S, Imade M, Mori Y, Speck JS, Nakamura S
54 - 63	Transport phenomena and the effects of reactor geometry for epitaxial GaN growth in a vertical MOCVD reactor Tseng CF, Tsai TY, Huang YH, Lee MT, Horng RH
64 - 68	Effect of additives on the purification of urease Yu X, Wang J, Ulrich J
69 - 77	Physical modelling of temperature fluctuations in a high aspect ratio model of the Czochralski crystal growth Pal J, Cramer A, Grants I, Eckert S, Gerbeth G
78 - 82	Influence factors on the formation of magnesium nanowires prepared by physical vapor deposition Wang H, Song XP, You L, Zhang B
83 - 91	Kinetics modeling and growth of Si layers by Liquid Phase Epitaxy Driven by Solvent Evaporation (LPESE) Giraud S, Duffar T, Pihan E, Fave A
92 - 94	Improved ferroelectric property and domain structure of highly a-oriented polycrystalline CaBi2Nb2O9 thin film Ahn Y, Son JY
95 - 104	Structural inhomogeneities in Fe Te0.6Se0.4: Relation to superconductivity Prokes K, Schulze M, Hartwig S, Schafer N, Landsgesell S, Blum CGF, Abou-Ras D, Hacisalihoglu MY, Ressouche E, Ouladdiaf DB, Buchner B, Wurmehl S
105 - 107	Composition modulated InAsSb superlattice induced by non-incorporating Bismuth Sarney WL, Svensson SP
108 - 115	Measuring precipitation kinetics of sparingly soluble salts using Shock-Freeze Cryo-TEM Hendricks U, Pascual MR, Banfield JF, Lewis AE
116 - 122	Effect of a transverse magnetic field on solidification morphology and microstructures of pure Sn and Sn-15 wt% Pb alloys grown by a Czochralski method Shen Z, Zhong YB, Wang H, Ren WL, Lei ZS, Ren ZM
123 - 128	In-situ aging microwave heating synthesis of LTA zeolite layer on mesoporous TiO2 coated porous alumina support Baig MA, Patel F, Alhooshani K, Muraza O, Wang EN, Laoui T
129 - 132	A potentially optimal interface of ZnO/Si predicted by the good-matching-site approach Ye F, Zhang XY, Cao SP, Zhang C
133 - 138	Diffusion of zinc in gallium arsenide with the participation isovalent impurities Karlina LB, Vlasov AS, Ber BY, Kazantsev DY
139 - 145	Porous silicon reorganization: Influence on the structure, surface roughness and strain Milenkovic N, Driessen M, Weiss C, Janz S
146 - 151	Aligned growth of TIPS pentacene crystalline domains adhered to Au stripes formed on SiO2 surfaces Onojima N, Nakamura A, Saito H, Daicho N
152 - 159	Numerical investigation of multiple stationary and time-periodic flow regimes in vertical rotating disc CVD reactors Gakis GP, Koronaki ED, Boudouvis AG