Journal of Crystal Growth

Journal of Crystal Growth, Vol.416 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (31 articles)

1 - 7	Growth of multicrystalline silicon in a cone-shaped crucible Schmid E, Poklad A, Heinze V, Meier D, Patzold O, Stelter M
8 - 11	Coincident site lattice bi-crystals growth-Impurity segregation towards grain boundaries Autruffe A, Arnberg L, Di Sabatino M, Vines L
12 - 16	Optical properties and bonding behaviors of InSbN alloys grown by metal-organic chemical vapor deposition Jin YJ, Tang XH, Teng JH, Zhang DH
17 - 20	Morphology of the polar twin structure in Czochralski grown alpha-SrB4O7 crystals Zaitsev AI, Radionov NV, Cherepakhin AV, Vasiliev AD, Zamkov AV
21 - 27	Lateral overgrowth of germanium for monolithic integration of germanium-on-insulator on silicon Nam JH, Alkis S, Nam D, Afshinmanesh F, Shim J, Park JH, Brongersma M, Okyay AK, Kamins TI, Saraswat K
28 - 33	Crystallization of jarosite in the presence of amino acids Crabbe H, Fernandez N, Jones F
34 - 40	Single crystalline SiGe layers on Si by solid phase epitaxy Lieten RR, McCallum JC, Johnson BC
41 - 46	Synthesis and structural analysis of C-60-C-70 two-component fullerene nanowhiskers Konno T, Wakahara T, Miyazawa K
47 - 56	The crystal morphology and growth rates of triclinic N-docosane crystallising from N-dodecane solutions Camacho DM, Roberts KJ, Lewtas K, Morel I
57 - 61	Influence of germanium doping on the performance of high-performance multi-crystalline silicon Su J, Zhong GX, Zhang ZY, Zhou XC, Huang XM
62 - 65	Flux growth utilizing the reaction between flux and crucible Yan JQ
66 - 72	Photoinduced crystallization of calcium carbonate from a homogeneous precursor solution in the presence of partially hydrolyzed poly(vinyl alcohol) Nishio T, Naka K
73 - 77	GaSb/GaAs quantum-ring-with-dot structures grown by droplet epitaxy Kunrugsa M, Panyakeow S, Ratanathammaphan S
78 - 81	Structural, optical and electrical properties of Sb2Te3 films prepared by pulsed laser deposition Liu TT, Deng HM, Cao HY, Zhou WL, Zhang J, Liu J, Yang PX, Chu JH
82 - 89	Removal of oxidic impurities for the growth of high purity lead iodide single crystals Tonn J, Matuchova M, Danilewsky AN, Croll A
90 - 95	Catalytic synthesis of matchstick-like Ag2Se-ZnSe hetero-nanorods using Ag2S nanocrystals as seeds Fan WL, Yu H, Lu CH, Wang L, Long LL, Wu YJ, Wang JL
96 - 99	High-purity InAs1-xSbx epilayer grown by a LPE technique Lv YF, Hu SH, Xu YG, Zhou W, Wang Y, Wang R, Yu GL, Dai N
100 - 105	Vertical Bridgman growth of Al2O3/YAG:Ce melt growth composite Yoshimura M, Sakata S, Iba H, Kawano T, Hoshikawa K
106 - 112	Influence of order degree of amorphous germanium on metal induced crystallization Wang P, Liu HH, Qi DF, Sun QQ, Chen SY, Li C, Huang W, Lai HK
113 - 117	Effects of growth temperature on surface morphology of InP grown on patterned Si(001) substrates Lee SM, Cho YJ, Park JB, Shin KW, Hwang E, Lee S, Lee MJ, Cho SH, Shin DS, Park J, Yoon E
118 - 125	X-ray photoelectron spectroscopy and diffraction investigation of a metal-oxide-semiconductor heterostructure: Pt/Gd2O3/Si(111) Ferrah D, El Kazzi M, Niu G, Botella C, Penuelas J, Robach Y, Louahadj L, Bachelet R, Largeau L, Saint-Girons G, Liu Q, Vilquin B, Grenet G
126 - 129	Epitaxial growth of tin(II) niobate with a pyrochlore structure Katayama S, Ogawa Y, Hayashi H, Oba F, Tanaka I
130 - 133	InAs-based InAs/GaAsSb type-II superlattices: Growth and characterization Wang FF, Chen JX, Xu ZC, Zhou Y, He L
134 - 141	Synthesis of size-controlled colloidal InAs quantum dots using triphenylarsine as a stable arsenic source Uesugi H, Kita M, Omata T
142 - 147	Characterization of comet-shaped defects on C-face 4H-SiC epitaxial wafers by electron microscopy Yamashita T, Matsuhata H, Sekiguchi T, Momose K, Osawa H, Kitabatake M
148 - 153	Microsphere morphology tuning and photo-luminescence properties of monoclinic Y2WO6 Gao H, Bai YL, Zhang JY, Tang ZL
154 - 158	Surface and bulk electronic properties of low temperature synthesized InN microcrystals Barick BK, Dhar S
159 - 163	Reusability of contaminated seed crystal for cast quasi-single crystalline silicon ingots Li ZY, Liu LJ, Zhou GS
164 - 168	The effect of plane orientation on indium incorporation into InGaN/GaN quantum wells fabricated by MOVPE Wang YX, Shimma R, Yamamoto T, Hayashi H, Shiohama K, Kurihara K, Hasegawa R, Ohkawa K
169 - 174	Design, fabrication and testing of an apparatus for in-situ investigation of free dendritic growth under an applied electric field Nasresfahani MR, Niroumand B, Kermanpur A
175 - 181	Influence of substrate surface defects on the homoepitaxial growth of GaN (0001) by metalorganic vapor phase epitaxy Zhou K, Liu JP, Ikeda M, Zhang SM, Li DY, Zhang LQ, Zeng C, Yang H