Journal of Crystal Growth

Journal of Crystal Growth, Vol.404 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (40 articles)

1 - 8	Epitaxial growth of (111)-oriented ZrxTi1-xN thin films on c-plane Al2O3 substrates Li RT, Gandhi JS, Pillai R, Forrest R, Starikov D, Bensaoula A
9 - 13	Tellurium n-type doping of highly mismatched amorphous GaNi1-xAsx alloys in plasma-assisted molecular beam epitaxy Novikov SV, Ting M, Yu KM, Sarney WL, Martin RW, Svensson SP, Walukiewicz W, Foxon CT
14 - 19	Narrow shape distribution of Te inclusions in ZnTe single crystals grown from Te solution Yang R, Jie WQ, Liu H, Xu YD
20 - 25	Growth and spectroscopic properties of samarium oxalate single crystals Vimal G, Mani KP, Jose G, Biju PR, Joseph C, Unnikrishnan NV, Ittyachen MA
26 - 33	Orientation of silicon nanowires grown from nickel-coated silicon wafers Li FJ, Zhang S, Lee JW, Guo J, White TJ, Li B, Zhao DL
34 - 38	Influence of partial pressure on base-growth of single carbon nanotube Saeidi M
39 - 43	Structure of initial Ge nanoclusters at the edges of Si(111) steps with the front in the <-1-1 2 > direction Teys SA, Romanyuk KN, Olshanetsky BZ
44 - 47	Facile synthesis of carbon nanotubes via low temperature pyrolysis of ferrocene Zhu HL, Bai YJ, Cui HZ, Liu L
48 - 53	GaSb quantum dots on GaAs with high localization energy of 710 meV and an emission wavelength of 1.3 mu m Richter J, Strassner J, Loeber TH, Fouckhardt H, Nowozin T, Bonato L, Bimberg D, Braam D, Lorke A
54 - 58	Effect of Na contents on fabrication of p-type non-polar m-plane ZnO films Pan XH, Zhou YS, Chen SS, Ding P, Lu B, Huang JY, Ye ZZ
59 - 64	The effect of silica nucleation layers on grain control of multi-crystalline silicon in directional solidification Wong YT, Hsieh CT, Lan A, Hsu C, Lan CW
65 - 68	Growth and nonlinear optical properties of K3B6O10Br crystal Xia MJ, Xu B, Li RK
69 - 74	Continuous change of supersaturation and evolution of oriented structure in dipping LPE process of YBa2Cu3O7-delta Guo LS, Chen YY, Yao X
75 - 79	Characterization of homoepitaxial beta-Ga2O3 films prepared by metal-organic chemical vapor deposition Du XJ, Mi W, Luan CN, Li Z, Xia CT, Ma J
80 - 83	Homobuffer thickness effect on the conduction type of non-polar ZnO thin films Pan XH, Ding P, Huang JY, He HP, Ye ZZ, Lu B
84 - 88	Characteristics of phase transition of VO2 films grown on TiO2 substrates with different crystal orientations Li J, Dho J
89 - 99	Modeling and simulation of silicon epitaxial growth in Siemens CVD reactor Ni HY, Lu SJ, Chen CX
100 - 106	Crystal growth and mechanical characterization of ZrMo2O8 Ahmad MI, Mohanty G, Rajan K, Akinc M
107 - 115	Biomimetic synthesis of coexistence of vaterite-calcite phases controlled by histidine-grafted-chitosan Chen ZX, Xin MH, Li MC, Xu JP, Li XX, Chen XD
116 - 121	Growth and photocurrent characteristics of the photoconductive MnAl2S4 layers grown by hot-wall epitaxy method You SH, Hong KJ, Jeong TS, Lim KY, Youn CJ
122 - 129	Step graded buffer for (110) InSb quantum wells grown by molecular beam epitaxy Podpirka AA, Twigg ME, Tischler JG, Magno R, Bennett BR
130 - 135	Effects of crucible cover on heat transfer during sapphire crystal growth by heat exchanger method Wu M, Zhao WH, Liu LJ, Yang Y, Ma WC, Wang Y
136 - 139	Effect of LaNiO3 buffer layer on dielectric and tunable properties of Pb0.82La0.08Sr0.1Ti0.98O3 thin films on Pt/Ti/SiO2/Si substrates Liu L, Tang MH, Tang ZH, Xu DL, Li LQ, Zhou YC
140 - 145	Defect selective etching of GaAsyP1-y photovoltaic materials Yaung KN, Tomasulo S, Lang JR, Faucher J, Lee ML
146 - 151	Molecular beam epitaxy of ferromagnetic epitaxial GdN thin films Natali F, Vezian S, Granville S, Damilano B, Trodahl HJ, Anton EM, Warring H, Semond F, Cordier Y, Chong SV, Ruck BJ
152 - 156	Float zone growth and spectral properties of Cr,Nd:CaYAlO4 single crystals Ueda A, Higuchi M, Yamada D, Namiki S, Ogawa T, Wada S, Tadanaga K
157 - 163	Structural trends in Si dots formation on SiC surfaces using CVD environment Portail M, Vezian S, Teisseire M, Michon A, Chassagne T, Zielinski M
164 - 167	Structural and optical properties of epsilon-phase tris(8-hydroxyquinoline) aluminum crystals prepared by using physical vapor deposition method Xie WF, Pang ZY, Zhao Y, Jiang F, Yuan HM, Song H, Han SH
168 - 171	Ammonothermal growth of GaN on a self-nucleated GaN seed crystal Bao QX, Saito M, Hazu K, Kagamitani Y, Kurimoto K, Tomida D, Qiao K, Ishiguro T, Yokoyama C, Chichibu SF
172 - 176	MOCVD-grown compressively strained C-doped InxGa1-xAs1-ySby with high-In/Sb content for very low turn-on-voltage InP-based DHBTs Hoshi T, Kashio N, Sugiyama H, Yokoyama H, Kurishima K, Ida M, Matsuzaki H, Kohtoku M, Gotoh H
177 - 183	Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults Tendille F, De Mierry P, Vennegues P, Chenot S, Teisseire M
184 - 191	On the bulk beta-Ga2O3 single crystals grown by the Czochralski method Galazka Z, Irmscher K, Uecker R, Bertram R, Pietsch M, Kwasniewski A, Naumann M, Schulz T, Schewski R, Klimm D, Bickermann M
192 - 198	Diffusion suppression in vapor-liquid-solid Si nanowire growth by a barrier layer between the Au catalyst and substrate Koto M, Watanabe M, Sugawa E, Shimizu T, Shingubara S
199 - 203	Effect of additional hydrochloric acid flow on the growth of non-polar a-plane GaN layers on r-plane sapphire by hydride vapor-phase epitaxy Lee M, Mikulik D, Park S, Im K, Cho SH, Ko D, Kim UJ, Hwang S, Yoon E
204 - 209	Multifractal analysis of areas of spatial forms on surface of ZnxCd1-xTe-Si (111) heterocompositions Moskvin P, Kryzhanivskyy V, Rashkovetskyi L, Lytvyn P, Vuichyk M
210 - 222	Nonlinear model-based control of the Czochralski process IV: Feedforward control and its interpretation from the crystal grower's view Neubert M, Winkler J
223 - 230	Crystal growth and characterization of the non-centrosymmetric antiferromagnet Ba2CuGe2O7 Fittipaldi R, Rocco L, Hatnean MC, Granata V, Lees MR, Balakrishnan G, Vecchione A
231 - 240	The application of floating dies for high speed growth of CsI single crystals by edge-defined film-fed growth (EFG) Guguschev C, Calvert G, Podowitz S, Vailionis A, Yeckel A, Feigelson RS
241 - 245	Distinct crystallinity and orientations of hydroxyapatite thin films deposited on C- and A-plane sapphire substrates Akazawa H, Ueno Y
246 - 255	Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature Matteini F, Tutuncuoglu G, Ruffer D, Alarcon-Llado E, Morral AFI