Journal of Crystal Growth

Journal of Crystal Growth, Vol.366 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (19 articles)

1 - 7	Multi-seeded growth of melt processed Gd-Ba-Cu-O bulk superconductors using different arrangements of thin film seeds Cheng L, Guo LS, Wu YS, Yao X, Cardwell DA
8 - 14	Suppression of lateral growth in InAs/InAsSb heterostructured nanowires Pea M, Ercolani D, Li A, Gemmi M, Rossi F, Beltram F, Sorba L
15 - 19	Geometric model for metalorganic vapour phase epitaxy of dense nanowire arrays Borg BM, Johansson J, Storm K, Deppert K
20 - 25	Comparative study of etching high crystalline quality AlN and GaN Guo W, Xie J, Akouala C, Mita S, Rice A, Tweedie J, Bryan I, Collazo R, Sitar Z
26 - 30	CVD growth of SiC on sapphire substrate and graphene formation from the epitaxial SiC Hwang J, Kim M, Shields VB, Spencer MG
31 - 34	Growth and properties of transparent conducting CuAlO2 single crystals by a flux self-removal method Yoon JS, Nam YS, Baek KS, Park CW, Ju HL, Chang SK
35 - 38	High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy Zhang YT, Dong X, Li GX, Li WC, Zhang BL, Du GT
39 - 42	Thickness dependence of stress in La0.9Sr0.1MnO3 monocrystalline nanofihrns using synchrotron radiation X-ray diffraction Zhang HD, Li ZJ, Long YZ, Xie HW, Sun B, Lu HB, Mai ZH
43 - 46	The influence of deposition temperature on growth mode, optical and mechanical properties of ZnO films prepared by the ALD method Yuan NY, Wang SY, Tan CB, Wang XQ, Chen GG, Ding JN
47 - 50	Liquid phase epitaxy of REBCO (RE=Y, Sm) thick films on YBCO thin film deposited on LAO substrate Guo LS, Chen YY, Cheng L, Li W, Xiong J, Tao BW, Yao X
51 - 54	Structural and transport properties of epitaxial PrNiO3 thin films grown by molecular beam epitaxy Feigl L, Schultz BD, Ohya S, Ouellette DG, Kozhanov A, Palmstrom CJ
55 - 60	Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer Galiev GB, Vasil'evskii IS, Pushkarev SS, Klimov EA, Imamov RM, Buffat PA, Dwir B, Suvorova EI
61 - 66	Optimization of low temperature GaN buffer layers for halide vapor phase epitaxy growth of bulk GaN Hemmingsson C, Pozina G
67 - 75	Single crystalline Si substrate growth by lateral diffusion epitaxy Li B, Yu HL, Shen HX, Kitai A
76 - 81	Hollow crystal anti-solvent preparation process as a promising technique to improve dissolution of poorly soluble drugs Paulino AS, Rauber GS, Campos CEM, Mauricio MHP, de Avillez RR, Cuffini SL, Cardoso SG
82 - 87	Calculation of crystal-melt interfacial free energies of fcc metals Zhou HG, Lin X, Wang M, Huang WD
88 - 94	Analysis of thermal cycle-induced dislocation reduction in HgCdTe/CdTe/Si(211) by scanning transmission electron microscopy Jacobs RN, Benson JD, Stoltz AJ, Almeida LA, Farrell S, Brill G, Salmon M, Newell A
95 - 100	Effect of asymmetric magnetic fields on crystal-melt interface in silicon CZ process Hong YH, Nam BW, Sim BC
101 - 106	Single femtosecond laser pulse-single crystal formation of glycine at the solution surface Liu TH, Uwada T, Sugiyama T, Usman A, Hosokawa Y, Masuhara H, Chiang TW, Chen CJ