Journal of Crystal Growth

Journal of Crystal Growth, Vol.248 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (107 articles)

1 - 7	Advances in the modeling of MOVPE processes Karpov SY
8 - 13	Structure and energetics of nitride surfaces under MOCVD growth conditions Van de Walle CG, Neugebauer J
14 - 19	Metalorganic chemical vapor phase deposition of ZnO with different O-precursors Oleynik N, Adam M, Krtschil A, Blasing J, Dadgar A, Bertram F, Forster D, Diez A, Greiling A, Seip M, Christen J, Krost A
20 - 24	MOVPE growth of ZnO using various oxygen precursors Kirchner C, Gruber T, Reuss F, Thonke K, Waag A, Giessen C, Heuken M
25 - 30	Growth mode control of ZnO toward nanorod structures or high-quality layered structures by metal-organic vapor phase epitaxy Ogata K, Maejima K, Fujita S, Fujita S
31 - 36	A quantum chemistry investigation of the gas phase and surface chemistry of the MOCVD of ZnSe Moscatelli D, Cavallotti C, Masi M, Carra S
37 - 42	MOVPE growth and characterisation of ZnTe epilayers on (100)ZnTe : P substrates Lovergine N, Traversa M, Prete P, Yoshino K, Ozeki M, Pentimalli M, Tapfer L, Mancini AM
43 - 49	Growth and optical properties of high-quality ZnTe homoepitaxial layers by metalorganic vapor phase epitaxy Tanaka T, Hayashida K, Wang SL, Guo QX, Nishio M, Ogawa H
50 - 55	Growth and p-type doping of ZnSeTe on InP Strassburg M, Strassburg M, Schulz O, Pohl UW, Hoffmann A, Bimberg D, Kontos AG, Raptis YS
56 - 61	Structural characterization of ZnSe/ZnMgSe MQWs grown on (100)GaAs by low pressure MOVPE Prete P, Lovergine N, Di Luccio T, Tapfer L, Mancini AM
62 - 66	MOVPE growth and characterization of hexagonal CdS epilayers and CdS-based QW structures on CdS and ZnCdS substrates Kozlovsky VI, Martovitsky VP, Sannikov DA, Kuznetsov PI, Yakushcheva GG, Jitov VA
67 - 71	Contamination control in gas delivery systems for MOCVD Watanabe T, Funke HH, Torres R, Raynor MW, Vininski J, Houlding VH
72 - 76	Optimization of palladium cell for reliable purification of hydrogen in MOCVD Funke HH, Raynor MW, Houlding VH, Bossard P, Fabiano P, Stucky D
77 - 81	Sub-atmospheric pressure gas sources for bulk storage and delivery of arsine and phosphine to MOCVD tools Raynor MW, Houlding VH, Funke HH, Frye R, Dietz JA
82 - 85	GC/MS analyses of MOVPE precursors and characterization of impurities in trimethylindium, trimethylaluminum and bis(cyclopentadienyl)magnesium Grant WB, Amamchyan A, Stennick RS, Shenai DV
86 - 90	Correlation of reduced oxygen content in precursors with improved MOVPE layer quality Rushworth SA, Smith LM, Ravetz MS, Coward KM, Odedra R, Kanjolia R, Bland SW, Dimroth F, Bett AW
91 - 98	Correlation of vapor pressure equation and film properties with trimethylindium purity for the MOVPE grown III-V compounds Shenai DV, Timmons ML, DiCarlo RL, Lemnah GK, Stennick RS
99 - 107	Vapor pressure of metal organic precursors Fulem M, Ruzicka K, Ruzicka V, Hulicius E, Simecek T, Melichar K, Pangrac J, Rushworth SA, Smith LM
IX - X	Proceedings of the Eleventh Conference on Metalorganic Vapor Phase Epitaxy - Berlin, Germany, 3-7 June 2002 - Preface Krost A, Mullin B, Weyers M, Richter W
108 - 113	MOVPE homoepitaxial growth used to study the effect of aging and chemical treatment on GaAs substrates Allwood D, Mason N, Mowbray A, Palmer R
114 - 118	Comparison of carbon and zinc p-clad doped LP MOCVD grown InGaAs/AlGaAs low divergence high-power laser heterostructures Bulaev PV, Marmalyuk AA, Padalitsa AA, Nikitin DB, Zalevsky ID, Kapitonov VA, Nikolaev DN, Pikhtin NA, Lyutetskiy AV, Tarasov IS
119 - 123	Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs Longo M, Magnanini R, Parisini A, Tarricone L, Carbognani A, Bocchi C, Gombia E
124 - 129	Heavy carbon doping of GaAs by MOVPE using a new dopant source CBrCl3 and characterization of the epilayers Uchida K, Bhunia S, Sugiyama N, Furiya M, Katoh M, Katoh S, Nozaki S, Morisaki H
130 - 133	Growth of carbon-doped LP-MOVPE InAlAs using non-gaseous sources Neumann S, Prost W, Tegude FJ
134 - 138	Effect of growth temperature on C-doped InAlAs layers grown by LP-MOVPE Ribeiro ML, Souza PL, Tribuzy CVB, Pires MP, Yavich B
139 - 143	X-ray characterization of stacked InP/(InGa)As : C HBT and InP/(InGa)As HEMT layer sequences grown by LP-MOVPE using non-gaseous sources Velling P, Keiper D, Brennemann A, Agethen M, Janssen G, Bertenburg RM
144 - 148	Oxygen doping of AlGaAs in MOVPE using triethoxyarsine Fujita Y
149 - 152	High-quality, Cr-doped InGaAs/InP(001) MQWs grown by tert-butylarsine in a MOVPE apparatus Carta G, D'Andrea A, Fernandez-Alonso F, Franco A, El Habra N, Righini M, Rossetto G, Schiumarini D, Selci S, Zanella P
153 - 157	MOVPE growth of InAlAs using TBAs and DitBuSi for HEMT applications Keiper D, Velling P, Brennemann A, Agethen M, van den Berg C, Bertenburg RM, Schineller B, Heuken M
158 - 162	MOVPE growth and polarisation dependence of (dis-)ordered InGaAsP PIN diodes for optical fibre applications Neumann S, Spieler J, Blache R, Kiesel P, Prost W, Dohler GH, Tegude FJ
163 - 168	Evaluation of copper organometallic sources for CuGaSe2 photovoltaic applications Artaud-Gillet MC, Duchemin S, Odedra R, Orsal G, Rega N, Rushworth S, Siebentritt S
169 - 174	MOVPE of epitaxial CuInSe2 on GaAs Rega N, Siebentritt S, Beckers I, Beckmann J, Albert J, Lux-Steiner M
175 - 179	Synthesis of nanocrystalline silicon carbonitride films by remote plasma enhanced chemical vapor deposition using the mixture of hexamethyldisilazane with helium and ammonia Fainer NI, Rumyantsev YM, Golubenko AN, Kosinova ML, Kuznetsov FA
180 - 185	Property design of Bi4Ti3O12-based thin films using a site-engineered concept Funakubo H, Watanabe T, Kojima T, Sakai T, Noguchi Y, Miyayama M, Osada M, Kakihana M, Saito K
186 - 193	MOVPE growth of visible vertical-cavity surface-emitting lasers (VCSELs) Zorn M, Knigge A, Zeimer U, Klein A, Kissel H, Weyers M, Trankle G
194 - 200	In-situ determination of interface roughness in MOVPE-grown visible VCSELs by reflectance spectroscopy Haberland K, Zorn M, Klein A, Bhattacharya A, Weyers M, Zettler JT, Richter W
201 - 205	Real time in situ monitoring of stacked InAs/InP quantum dots by spectral reflectance Park K, Hwang H, Kang JH, Yoon S, Kim YD, Yoon E
206 - 210	Two-photon photoemission as a probe of unoccupied and occupied surface states of InP(100) Toben L, Hannappel T, Eichberger R, Moller K, Gundlach L, Ernstorfer R, Willig F
211 - 215	In situ spectroscopic ellipsometry of MOCVD-grown GaN compounds for on-line composition determination and growth control Bonanni A, Stifter D, Montaigne-Ramil A, Schmidegg K, Hingerl K, Sitter H
216 - 221	Substrate temperature reference using SiC absorption edge measured by in situ spectral reflectometry Balmer RS, Martin T
222 - 228	A new method for low-powered laser reflectance and scattering monitoring of MOVPE growth with narrow optical access Backstrom C, Irvine SJC, Barrioz V
229 - 234	Advanced process control for high quality R&D and production of MOVPE material by RealTeMP (TM) Malm H, Asplund C, Becanovic S, Borglind J, Parekh A, Hirschauer B
235 - 239	Automated emissivity corrected wafer-temperature measurement in Aixtrons planetary reactors Bergunde T, Henninger B, Lunenburger M, Heuken M, Weyers M, Zettler JT
240 - 243	Growth of InGaAsP/InP-laser structures monitored by using RAS techniques Wolfram P, Steimetz E, Ebert W, Henninger B, Zettler JT
244 - 248	Optical in situ monitoring of MOVPE GaSb(100) film growth Moller K, Kollonitsch Z, Giesen C, Heuken M, Willig F, Hannappel T
249 - 253	RDS characterization of GaAsSb and GaSb grown by MOVPE Pitts OJ, Watkins SP, Wang CX
254 - 258	Influence of the reconstruction of GaAs (001) on the electro-optical bulk properties Pristovsek M, Tsukamoto S, Han B, Zettler JT, Richter W
259 - 264	Time-resolved reflectance difference spectroscopy study of Sb- and As-terminated InP(100) surfaces Wang CX, Pitts OJ, Watkins SP
265 - 273	Growth of Sb-based materials by MOVPE Dimroth F, Agert C, Bett AW
274 - 278	Structural effects of carbon in GaSb grown by metalorganic vapor phase epitaxy Watkins SP, Wiersma RD, Wang CX, Pitts OJ, Bolognesi CR
279 - 283	Photoluminescence characterisation of unintentional acceptors in MOVPE-grown GaInSb Vankova V, Leitch AWR, Botha JR
284 - 288	Growth and properties of GaAsSb/InP and GaAsSb/InAlAs superlattices on InP Yi SS, Chamberlin DR, Girolami G, Juanitas M, Bour D, Moll N, Moon R
289 - 295	The preparation of InGa(As)Sb and Al(Ga)AsSb films and diodes on GaSb for thermophotovoltaic applications using metal-organic chemical vapor deposition Cederberg JG, Hafich MJ, Biefeld RM, Palmisiano M
296 - 300	Powerful InAsSbP/InAsSb light emitting diodes grown by MOVPE Kizhayev SS, Zotova NV, Molchanov SS, Pushnyi BV, Yakovlev YP
301 - 309	II-VI quantum dots grown by MOVPE Suemune I, Yoshida K, Kumano H, Tawara T, Ueta A, Tanaka S
310 - 316	Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions Borgstrom M, Bryllert T, Sass T, Wernersson LE, Samuelson L, Seifert W
317 - 321	Growth of spatially ordered InAs quantum dots on step-bunched vicinal GaAs (100) substrates Poser F, Bhattacharya A, Weeke S, Richter W
322 - 327	Atomic structure of InAs and InGaAs quantum dots determined by cross-sectional scanning tunneling microscopy Eisele H, Lenz A, Hennig C, Timm R, Ternes M, Dahne M
328 - 332	InAs delta-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy Hazdra P, Voves J, Oswald J, Hulicius E, Pangrac J, Simecek T
333 - 338	GaSb quantum dot growth using InAs quantum dot stressors Muller-Kirsch L, Ledentsov NN, Sellin R, Pohl UW, Bimberg D, Hausler I, Kirmse H, Neumann W
339 - 342	Wavelength extension of GaInAs/GaIn(N)As quantum dot structures grown on GaAs Hakkarainen T, Toivonen J, Sopanen M, Lipsanen H
343 - 347	InGaAsN/GaAs QD and QW structures grown by MOVPE Daniltsev VM, Drozdov MN, Drozdov YN, Gaponova DM, Khrykin OI, Murel AV, Shashkin VI, Vostokov NV
348 - 353	1070 nm and 1118 nm high power lasers grown with partial strain balancing Roberts JS, Cullis AG, Sarma J, Tihanyi PL
354 - 358	Highly strained very high-power laser diodes with InGaAs QWs Bugge F, Zorn M, Zeimer U, Sharma T, Kissel H, Hulsewede R, Erbert G, Weyers M
359 - 363	Structural properties of strained piezoelectric [111]A-oriented InGaAs/GaAs quantum well structures grown by MOVPE Kim J, Cho S, Sanz-Hervas A, Majerfeld A, Patriarche G, Kim BW
364 - 368	Properties of (In,Ga)(As,P)/GaAs interfaces grown under different metalorganic vapor phase epitaxy conditions Knauer A, Krispin P, Balakrishnan VR, Weyers M
369 - 374	Anisotropy in transport properties of ordered strained InGaP Hasenohrl S, Novak J, Kudela R, Betko J, Morvic M, Fedor J
375 - 379	Strain in GaP/GaAs and GaAs/GaP resonant tunnelling heterostructures Sass T, Pietzonka I, Borgstrom M, Gustafson B, Wernersson LE, Seifert W
380 - 383	Growth of III/V resonant tunnelling diode on Si substrate with LP-MOVPE Neumann S, Bakin A, Velling P, Prost W, Wehmann HH, Schlachetzki A, Tegude FJ
384 - 389	Selective-area growth of high-crystalline-quality InGaAlAs by metal-organic vapor-phase epitaxy Tsuchiya T, Shimizu J, Shirai M, Aoki M
390 - 394	Growth and characterization of Si, S and Zn-doped InP in selective area growth conditions Decobert J, Herrati D, Colson V, Leclerc D, Goldstein L
395 - 399	High growth enhancement factor in arrayed waveguide by MOVPE selective area growth Moriguchi Y, Kihara T, Shimomura K
400 - 404	Alloy composition control of InGaAs/InP grown by Cl-assisted MOVPE with tertiarybutylchloride Naniwae K, Kurihara K, Nishi K, Sugou S
405 - 410	Analysis of a time-dependent supply mechanism in selective area growth by MOCVD Greenspan JE, Blaauw C, Emmerstorfer B, Glew RW, Shih I
411 - 416	A multiscale study of the selective MOVPE of AlxGa1-xAs in the presence of HCl Cavallotti C, Nemirovskaya M, Jensen KF
417 - 420	Investigation of the GaAs-pyramids overgrowth using MOCVD Gregusova D, Cambel V, Kudela R, Soltys J, Kostie I, Attolini G, Pelosi C
421 - 425	Surface quality of InP etched with tertiarybutylchloride in an MOVPE reactor Franke D, Sabelfeld N, Ebert W, Harde P, Wolfram P, Grote N
426 - 430	Fabrication of AlGaInAs and GaInAsP buried heterostructure lasers by in situ etching Gessner R, Dobbinson A, Miler A, Rieger J, Veuhoff E
431 - 436	Surface morphology and localised states of GaInNAs single quantum wells grown by MOVPE Baskar K, Sundgren P, Douheret O, Landgren G
437 - 440	Arsenic incorporation and growth mode of GaNAs grown by low-pressure metal-organic chemical vapor deposition Na HS, Kim HJ, Yoon E, Sone C, Park Y
441 - 445	N-enrichment at the GaAs1-xNx/GaAs(001) interface: microstructure and optical properties Dumont H, Auvray L, Dazord J, Monteil Y, Bondoux C, Patriarche G
446 - 450	Studies of MOVPE growth conditions for the improvement of GaInAsN on GaAs substrates for 1.3 mu m laser emission Gouardes E, Alexandre F, Gauthier-Lafaye O, Vuong-Becaert A, Colson V, Thedrez B
451 - 456	Doping behaviour of Si, Te, Zn and Mg in lattice-matched (GaIn)(NAs)/GaAs bulk films Volz K, Koch J, Kunert B, Stolz W
457 - 462	Nitrogen incorporation in (GaIn)(NAs) for 1.3 mu m VCSEL grown with MOVPE Ramakrishnan A, Steinle G, Supper D, Stolz W, Ebbinghaus G
463 - 467	Growth and characterization of high quality BxGa1-xAs/GaAs(001) epilayers Dumont H, Dazord J, Monteil Y, Alexandre F, Goldstein L
468 - 473	MOVPE growth of BxGa1-xAs, BxGa1-x-yInyAs, and BxAl1-xAs alloys on (001) GaAs Gottschalch V, Leibiger G, Benndorf G
474 - 478	Overgrowth experiments of ferromagnetic (MnGa)As-cluster layers by MOVPE Lampalzer M, Volz K, Treutmann W, Nau S, Torunski T, Megges K, Lorberth J, Stolz W
479 - 486	Metalorganic chemical vapor deposition of group III nitrides - a discussion of critical issues Keller S, DenBaars SP
487 - 493	Influence of crystallographic structure on electrical characteristics of (Al, Ga)N epitaxial layers grown by MOVPE method Paszkiewicz R, Paszkiewicz B, Kozlowski J, Piasecki M, Kosnikowski W, Tlaczala M
494 - 497	Growth of self-assembled nanosize InGaN/GaN multiple quantum wells embedded in amorphous SiNx by metalorganic vapor phase epitaxy Moon YT, Kim DJ, Park JS, Oh JT, Kim YS, Park NM, Kim BH, Park SJ
498 - 502	Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures Jacobs K, Van Daele B, Leys MR, Moerman I, Van Tendeloo G
503 - 506	Electrical and crystalline properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy Yamaguchi S, Iwamura Y, Watanabe Y, Kosaki M, Yukawa Y, Nitta S, Kamiyama S, Amano H, Akasaki I
507 - 512	Investigations about series resistance of MOVPE grown GaN laser structures Scholz F, Moutchnik G, Dumitru V, Harle R, Schweizer H
513 - 517	Growth and characteristics of Fe-doped GaN Heikman S, Keller S, Mates T, DenBaars SP, Mishra UK
518 - 522	GaN/InGaN quantum wells grown in a close coupled showerhead reactor Thrush EJ, Kappers MJ, Dawson P, Vickers ME, Barnard J, Graham D, Makaronidis G, Rayment FDG, Considine L, Humphreys CJ
523 - 527	Spectroscopic ellipsometry during metalorganic vapor phase epitaxy of InN Schmidtling T, Drago M, Pohl UW, Richter W
528 - 532	Influence of low-temperature interlayers on strain and defect density of epitaxial GaN layers Rossow U, Hitzel F, Riedel N, Lahmann S, Blasing J, Krost A, Ade G, Hinze P, Hangleiter A
533 - 536	LPMOCVD growth of GaN on silicon carbide di Forte-Poisson MA, Romann A, Tordjman M, Magis M, Di Persio J, Jacques C, Vicente P
537 - 541	Current-confining structure of InGaN hexagonal microfacet lasers by selective incorporation of Mg during selective-area MOVPE Akasaka T, Ando S, Nishida T, Saitoh T, Kobayashi N
542 - 547	Electrical microcharacterization of dislocation-related charges in GaN-based single layers by scanning probe microscopy techniques Krtschil A, Dadgar A, Krost A
548 - 551	AlGaN/AlGaN UV light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition Zhu TG, Chowdhury U, Denyszyn JC, Wong MM, Dupuis RD
552 - 555	High-performance solar-blind photodetector using an Al0.6Ga0.4N n-type window layer Chowdhury U, Wong MM, Collins CJ, Yang B, Denyszyn JC, Campbell JC, Dupuis RD
556 - 562	MOVPE growth of GaN on Si(111) substrates Dadgar A, Poschenrieder M, Blasing J, Contreras O, Bertram F, Riemann T, Reiher A, Kunze M, Daumiller I, Krtschil A, Diez A, Kaluza A, Modlich A, Kamp M, Christen J, Ponce FA, Kohn E, Krost A
563 - 567	Efficient stress relief in GaN heteroepitaxy on Si(111) using low-temperature AlN interlayers Reiher A, Blasing J, Dadgar A, Diez A, Krost A
568 - 572	Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates Haffouz S, Grzegorczyk A, Hageman PR, Vennegues P, van der Drift EWJM, Larsen PK
573 - 577	Epitaxial lateral overgrowth of GaN on selected-area Si(111) substrate with nitrided Si mask Naoi H, Narukawa M, Miyake H, Hiramatsu K
578 - 582	Investigation of buffer growth temperatures for MOVPE of GaN on Si(111) Dikme Y, Gerstenbrandt G, Alam A, Kalisch H, Szymakowski A, Fieger M, Jansen RH, Heuken M