Thin Solid Films

Thin Solid Films, Vol.520, No.8 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (63 articles)

3131 - 3132	Foreword Hartmann JM
3133 - 3138	Low temperature Si:C co-flow and hybrid process using Si3H8/Cl-2 Bauer M, Thomas SG
3139 - 3143	Low temperature catalyst enhanced etch process with high etch rate selectivity for amorphous silicon based alloys over single-crystalline silicon based alloys Bauer M, Thomas SG
3144 - 3148	Low temperature selective epitaxial growth of SiCP on Si(110) oriented surfaces Bauer M, Thomas SG
3149 - 3154	Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20 nm n-type field effect transistor devices Loubet N, Adam T, Raymond M, Liu Q, Cheng KG, Sreenivasan R, Reznicek A, Khare P, Kleemeier W, Paruchuri V, Doris B, Sampson R
3155 - 3157	Effect of Thermal Annealing on Carbon in In-situ Phosphorous-Doped Si1-xCx films Adam T, Loubet N, Reznicek A, Paruchuri V, Sampson R, Sadana D
3158 - 3162	Characterization and analysis of epitaxial silicon phosphorus alloys for use in n-channel transistors Weeks KD, Thomas SG, Dholabhai P, Adams J
3163 - 3169	Faceting and nanostructure effects in Si and SiGe epitaxy Dutartre D, Seiss B, Campidelli Y, Pellissier-Tanon D, Barge D, Pantel R
3170 - 3174	SiGe channels for V-T control of high-k metal gate transistors for 32 nm complementary metal oxide semiconductor technology and beyond Reichel C, Schoenekess J, Kronholz S, Beernink G, Zeun A, Dietel A, Kammler T
3175 - 3178	High strain embedded-SiGe via low temperature reduced pressure chemical vapor deposition He H, Brabant P, Chung K, Shinriki M, Adam T, Reznicek A, Sadana D, Hasaka S, Francis T
3179 - 3184	Growth of high Ge content SiGe on (110) oriented Si wafers Hikavyy A, Vanherle W, Vincent B, Dekoster J, Bender H, Moussa A, Witters L, Hoffman T, Loo R
3185 - 3189	A benchmarking of silane, disilane and dichlorosilane for the low temperature growth of group IV layers Hartmann JM, Benevent V, Damlencourt JF, Billon T
3190 - 3194	Gas phase particle formation and elimination on Si (100) in low temperature reduced pressure chemical vapor deposition silicon-based epitaxial layers Shinriki M, Chung K, Hasaka S, Brabant P, He H, Adam TN, Sadana D
3195 - 3200	Growth of silicon based germanium tin alloys Kasper E, Werner J, Oehme M, Escoubas S, Burle N, Schulze J
3201 - 3205	Growth of Ge1-xSnx heteroepitaxial layers with very high Sn contents on InP(001) substrates Nakamura M, Shimura Y, Takeuchi S, Nakatsuka O, Zaima S
3206 - 3210	In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates Shimura Y, Takeuchi S, Nakatsuka O, Vincent B, Gencarelli F, Clarysse T, Vandervorst W, Caymax M, Loo R, Jensen A, Petersen DH, Zaima S
3211 - 3215	Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6 Gencarelli F, Vincent B, Souriau L, Richard O, Vandervorst W, Loo R, Caymax M, Heyns M
3216 - 3221	Low threading dislocation Ge on Si by combining deposition and etching Yamamoto Y, Kozlowski G, Zaumseil P, Tillack B
3222 - 3226	Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates Nguyen VH, Dobbie A, Myronov M, Norris DJ, Walther T, Leadley DR
3227 - 3231	Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration Shah VA, Dobbie A, Myronov M, Leadley DR
3232 - 3235	Electrical characterization of wafer-bonded Ge(111)-on-insulator substrates using four-point-probe pseudo-metal-oxide-semiconductor field-effect transistor method Minami K, Nakamura Y, Yamasaka S, Yoshitake O, Kikkawa J, Izunome K, Sakai A
3236 - 3239	Generation of uniaxial tensile strain of over 1% on a Ge substrate for short-channel strained Ge n-type Metal-Insulator-Semiconductor Field-Effect Transistors with SiGe stressors Moriyama Y, Kamimuta Y, Ikeda K, Tezuka T
3240 - 3244	Preparation and characterization of Ge epitaxially grown on nano-structured periodic Si pillars and bars on Si(001) substrate Zaumseil P, Yamamoto Y, Bauer J, Schubert MA, Matejova J, Kozlowski G, Schroeder T, Tillack B
3245 - 3248	Vertical dislocations in Ge films selectively grown in submicron Si windows of patterned substrates Harada S, Kikkawa J, Nakamura Y, Wang G, Caymax M, Sakai A
3249 - 3254	Direct and indirect radiative recombination from Ge Liu CW, Cheng TH, Chen YY, Jan SR, Chen CY, Chan ST, Nien YH, Yamamoto Y, Tillack B
3255 - 3258	Effects of dose on activation characteristics of P in Ge Anisuzzaman M, Sadoh T
3259 - 3261	Molecular beam epitaxy grown Ge/Si pin layer sequence for photonic devices Schulze J, Oehme M, Werner J
3262 - 3265	Laser assisted formation of binary and ternary Ge/Si/Sn alloys Stefanov S, Conde JC, Benedetti A, Serra C, Werner J, Oehme M, Schulze J, Chiussi S
3266 - 3270	Laser ablation and growth of Si and Ge Yap SS, Siew WO, Nee CH, Reenaas TW, Tou TY
3271 - 3275	Solid-phase epitaxy of undoped amorphous silicon by in-situ postannealing Skibitzki O, Yamamoto Y, Schubert MA, Tillack B
3276 - 3278	Enhancement of SiN-induced compressive and tensile strains in Si free-standing microstructures by modulation of SiN network structures Sadoh T, Kurosawa M, Heya A, Matsuo N, Miyao M
3279 - 3282	Homogeneous Si0.5Ge0.5 bulk crystal growth as substrates for strained Ge thin films by the traveling liquidus-zone method Kinoshita K, Nakatsuka O, Yoda S, Zaima S
3283 - 3287	Influence of SiGe layer thickness and Ge fraction on compressive strain and hole mobility in a SiGe-on-insulator substrate fabricated by the Ge condensation technique Yang HG, Wang D, Nakashima H
3288 - 3292	Low temperature formation of Si1-x-yGexSny-on-insulator structures by using solid-phase mixing of Ge1-zSnz/Si-on-insulator substrates Nakatsuka O, Mochizuki K, Shimura Y, Yamaha T, Zaima S
3293 - 3295	Low temperature (similar to 250 degrees C) layer exchange crystallization of Si1-xGex (x=1-0) on insulator for advanced flexible devices Park JH, Kurosawa M, Kawabata N, Miyao M, Sadoh T
3296 - 3299	Doping effects on the stability of stacking faults in silicon crystals Ohno Y, Tokumoto Y, Yonenaga I
3300 - 3303	Analysis of buried heterointerfacial hydrogen in highly lattice-mismatched epitaxy on silicon Yamazaki T, Asaoka H, Taguchi T, Yamamoto S, Yamazaki D, Maruyama R, Takeda M, Shamoto S
3304 - 3308	Gold nanocluster distribution on faceted and kinked Si nanowires Boukhicha R, Vincent L, Renard C, Gardes C, Yam V, Fossard F, Patriarche G, Jabeen F, Bouchier D
3309 - 3313	Site-controlled fabrication of dimension-tunable Si nanowire arrays on patterned (001)Si substrates Cheng SL, Lo CH, Chuang CF, Lee SW
3314 - 3318	Size effect on Ge nanowires growth kinetics by the vapor-liquid-solid mechanism Renard C, Boukhicha R, Gardes C, Fossard F, Yam V, Vincent L, Bouchier D, Hajjar S, Bubendorff JL, Garreau G, Pirri C
3319 - 3321	Ge and GexSi1-x islands formation on GexSi1-x solid solution surface Nikiforov AI, Timofeev VA, Teys SA, Gutakovsky AK, Pchelyakov OP
3322 - 3325	Sb mediated formation of Ge/Si quantum dots: Growth and properties Tonkikh AA, Zakharov ND, Novikov AV, Kudryavtsev KE, Talalaev VG, Fuhrmann B, Leipner HS, Werner P
3326 - 3331	The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures Hellings G, Hikavyy A, Mitard J, Witters L, Benbakhti B, Alian A, Waldron N, Bender H, Eneman G, Krom R, Schulze A, Vandervorst W, Loo R, Heyns M, Meuris M, Hoffmann T, De Meyer K
3332 - 3336	Electrical characterization of Omega-gated uniaxial tensile strained Si nanowire-array metal-oxide-semiconductor field effect transistors with < 100 >- and < 110 > channel orientations Habicht S, Feste S, Zhao QT, Buca D, Mantl S
3337 - 3340	Radiation damage of Si1-xGex S/D p-type metal oxide semiconductor field effect transistor with different Ge concentrations Nakashima T, Idemoto T, Tsunoda I, Takakura K, Yoneoka M, Ohyama H, Yoshino K, Gonzalez MB, Simoen E, Claeys C
3341 - 3344	Silicon interband tunneling diodes with high peak-to-valley ratios Oehme M
3345 - 3348	Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor deposition You SZ, Decoutere S, Nguyen ND, Van Huylenbroeck S, Sibaja-Hernandez A, Venegas R, Loo R, De Meyer K
3349 - 3353	Fluctuation of average position of electrons in Coulomb island in Si single-electron transistor Horiguchi S, Fujiwara A
3354 - 3360	Ge-on-Si optoelectronics Liu JF, Camacho-Aguilera R, Bessette JT, Sun XC, Wang XX, Cai Y, Kimerling LC, Michel J
3361 - 3364	Molecular beam epitaxy grown GeSn p-i-n photodetectors integrated on Si Werner J, Oehme M, Schirmer A, Kasper E, Schulze J
3365 - 3368	An artificial nonradiative recombination center model created by use of a Si1-xGex/Si quantum-well-inserted pseudomorphic superlattice Terada Y, Yasutake Y, Fukatsu S
3369 - 3373	A simulation study of thin film tandem solar cells with a nanoplate absorber bottom cell Chang ST, Hsieh BF, Liu YC
3374 - 3378	Physics of Schottky-barrier change by segregation and structural disorder at metal/Si interfaces: First-principles study Nakayama T, Kobinata K
3379 - 3381	Nickel Schottky junction on epi-Ge for strained Ge metal-oxide-semiconductor field-effect transistors source/drain engineering Lee MH, Hsieh BF, Chang ST, Lee SW
3382 - 3386	Source/drain junction fabrication for Ge metal-oxide-semiconductor field-effect transistors Yamamoto K, Yamanaka T, Ueno R, Hirayama K, Yang HG, Wang D, Nakashima H
3387 - 3391	Influence of oxygen transfer in Hf-based high-k dielectrics on flatband voltage shift Nabatame T, Kimura M, Yamada H, Ohi A, Ohishi T, Chikyow T
3392 - 3396	Behavior of N atoms after thermal nitridation of Si1-xGex surface Kawashima T, Sakuraba M, Tillack B, Murota J
3397 - 3401	Improvement of Al2O3/Ge interfacial properties by O-2-annealing Shibayama S, Kato K, Sakashita M, Takeuchi W, Nakatsuka O, Zaima S
3402 - 3405	High dielectric constant terbium oxide (Tb2O3) dielectric deposited on strained-Si:C Kao CH, Liu KC, Lee MH, Cheng SN, Huang CH, Lin WK
3406 - 3409	Temperature effects on the growth and electrical properties of Er2O3 films on Ge substrates Ji T, Nie TX, Cui J, Fang ZB, Yang XJ, Fan YL, Zhong ZY, Jiang ZM
3410 - 3414	Suppression of Mn segregation in Ge/Mn5Ge3 heterostructures induced by interstitial carbon Dau MT, Thanh VL, Le TG, Spiesser A, Petit M, Michez LA, Ngo TH, Vu DL, Nguyen QL, Sebban P
3415 - 3418	Resistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin film Tzeng WH, Zhong CW, Liu KC, Chang KM, Lin HC, Chan YC, Kuo CC, Tsai FY, Tseng MH, Chen PS, Lee HY, Chen F, Tsai MJ
3419 - 3422	Influence of Al co-deposition on the crystal growth of Co-based Heusler-compound thin films on Si(111) Oki S, Yamada S, Murakami T, Miyao M, Hamaya K