Thin Solid Films

Thin Solid Films, Vol.381, No.2 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (22 articles)

171 - 175	Electronic structure and interband optical properties of beta-FeSi2 Lange H
176 - 182	Calculation of electronic energy and density of state of iron-disilicides using a total-energy pseudopotential method, CASTEP Imai Y, Mukaida M, Tsunoda T
183 - 187	Electronic structure of beta-FeSi2 modified by r.f.-plasma of semiconducting SiH4, GeH4 gas Matsubara K, Nagao K, Kishimoto K, Anno H, Koyanagi T
188 - 193	Ion beam synthesized silicides: growth, characterization and devices Homewood KP, Reeson KJ, Gwilliam RM, Kewell AK, Lourenco MA, Shao G, Chen YL, Sharpe JS, McKinty CN, Butler T
194 - 201	Study of structure and optical properties of beta-FeSi2 precipitates formed by ion-implantation of Fe+ in Si(100) and effects of co-implantation of Fe+ and Si+ in amorphous SiO2 Oyoshi K, Lenssen D, Carius R, Mantl S
202 - 208	Formation of beta-FeSi2 precipitates at the SiO2/Si interface by Fe+ ion implantation and their structural and optical properties Oyoshi K, Lenssen D, Carius R, Mantl S
209 - 213	Dependence of photoluminescence from beta-FeSi2 and induced deep levels in Si on the size of beta-FeSi2 balls embedded in Si crystals Suemasu T, Fujii T, Takakura K, Hasegawa F
214 - 218	Preparation of beta-FeSi2 films by chemical vapor deposition Mukaida M, Hiyama I, Tsunoda T, Imai Y
219 - 224	Raman spectroscopic study of ion-beam synthesized polycrystalline beta-FeSi2 on Si(100) Maeda Y, Umezawa K, Hayashi Y, Miyake K
225 - 230	Microstructure characterization of ion-beam synthesized beta-FeSi2 phase by transmission electron microscopy Sugiyama M, Maeda Y
231 - 235	Microstructure of semiconducting MnSi1.7 and beta-FeSi2 layers grown by surfactant-mediated reactive deposition epitaxy Tatsuoka H, Koga T, Matsuda K, Nose Y, Souno Y, Kuwabara H, Brown PD, Humphreys CJ
236 - 243	Microstructure of beta-FeSi2 thin films prepared by pulsed laser deposition Yoshitake T, Nagamoto T, Nagayama K
244 - 250	Fabrication of heterostructure p-beta-Fe0.95Mn0.05Si2/n-Si diodes by Fe+ and Mn+ co-implantation in Si(100) substrates Katsumata H, Makita Y, Takada T, Tanoue H, Kobayashi N, Hasegawa M, Kakemoto H, Tsukamoto T, Uekusa S
251 - 255	Small polaron of beta-FeSi2 obtained from optical measurements Kakemoto H, Makita Y, Kino Y, Sakuragi S, Tsukamoto T
256 - 261	Photovoltaic properties of ion-beam synthesized beta-FeSi2/n-Si heterojunctions Maeda Y, Umezawa K, Hayashi Y, Miyake K, Ohashi K
262 - 266	Electrical and photovoltaic properties of iron-silicide/silicon heterostructures formed by pulsed laser deposition Liu ZX, Watanabe M, Hanabusa M
267 - 275	Spectral sensitivity enhancement by thin film of beta-FeSi2-Si composite prepared by RF-sputtering deposition Okajima K, Yamatsugu H, Wen C, Sudoh M, Yamada K
276 - 281	Single crystal growth of non-stoichiometric beta-FeSi2 by chemical transport reaction Behr G, Ivanenko L, Vinzelberg H, Heinrich A
282 - 286	Transport properties of Cr-doped beta-FeSi2 Arushanov E, Schon JH, Lange H
287 - 295	Thermoelectric properties of beta-FeSi2 single crystals and polycrystalline beta-FeSi2+x thin films Heinrich A, Griessmann H, Behr G, Ivanenko K, Schumann J, Vinzelberg H
296 - 302	Thermoelectric properties of Ru- or Ge-doped beta-FeSi2 films prepared by electron beam deposition Tsunoda T, Mukaida M, Imai Y
VII - VII	Special issue on silicide kankyo semiconductors - Ecologically friendly semiconductors - Optoelectronic and energy research for next generation - Preface Miyake K, Makita Y, Maeda Y, Suemasu T