Thin Solid Films

Thin Solid Films, Vol.374, No.2 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (26 articles)

143 - 149	Theoretical study of penetration reaction of fluorine atoms and ions into hydrogen-terminated Si(111) thin film Makino O, Sakata K, Yamazaki H, Iguchi K, Tachibana A
150 - 156	Atomistic simulation of silicon bombardment by energetic CF3+: product distributions and energies Abrams CF, Graves DB
157 - 161	Excited atoms in the vicinity of a surface in a barrier discharge measured by evanescent-wave laser spectroscopy Sakurai T, Toda M
162 - 166	Scanning tunneling microscopy of plasma-solid surface interface Kawasaki H, Ara K, Terashima K
167 - 174	Ion energy distribution at an r.f.-biased electrode in an inductively coupled plasma affected by collisions in a sheath Mizutani N, Hayashi T
175 - 180	Plasma interactions with high aspect ratio patterned surfaces: ion transport, scattering, and the role of charging Giapis KP, Hwang GS
181 - 189	Investigation of ion transportation in high-aspect-ratio holes from fluorocarbon plasma for SiO2 etching Noda S, Ozawa N, Kinoshita T, Tsuboi H, Kawashima K, Hikosaka Y, Kinoshita K, Sekine M
190 - 207	Transport mechanisms of ions and neutrals in low-pressure, high-density plasma etching of high aspect ratio contact holes Nishikawa K, Ootera H, Tomohisa S, Oomori T
208 - 216	Dynamics of plasma-surface interactions and feature profile evolution during pulsed plasma etching Ono K, Tuda M
217 - 227	Plasma processed ultra-thin SiO2 interfaces far advanced silicon NMOS and PMOS devices: applications to Si-oxide Si oxynitride, Si-oxide Si nitride and Si-oxide transition metal oxide stacked gate dielectrics Lucovsky G, Yang HY, Wu Y, Niimi H
228 - 234	Proton channeling into the Si substrate at the bottom of ultrahigh-aspect-ratio contact holes during plasma etching Ichimori T, Ikegami N, Hirashita N, Kanamori J
235 - 242	Effects of low-molecular-weight radicals for reduction of microloading in high-aspect contact-hole etching Samukawa S, Mukai T
243 - 248	Difference between C4F8 and C5F8 plasmas in surface reaction processes for selective etching of SiO2 over Si3N4 Motomura H, Imai S, Tachibana K
249 - 255	Correlation between CF2 and CxFy densities in C4F8 plasmas Sasaki K, Takizawa K, Takada N, Kadota K
256 - 261	Plasma enhanced chemical vapor deposition of thermally stable and low-dielectric-constant fluorinated amorphous carbon films using low-global-warming-potential gas C5F8 Shirafuji T, Kamisawa A, Shimasaki T, Hayashi Y, Nishino S
262 - 267	Detection of deposition rate of plasma-polymerized films by quartz crystal microbalance Kurosawa S, Hirokawa T, Kashima K, Aizawa H, Han DS, Yoshimi Y, Okada Y, Yase K, Miyake J, Yoshimoto M, Hilborn J
268 - 273	Effect of bias-enhancement in diamond nucleation and growth on nickel Hayashi Y, Shiraokawa N, Nishino S
274 - 277	a-Si : H film deposition using same phase modulated scanning plasma method Maemura Y, Yamaguchi T, Yang SC, Fujiyama H
278 - 281	Effects of cross-magnetic field on thin film preparation by pulsed Nd/YAG laser deposition Kawasaki H, Doi K, Hiraishi S, Suda Y
282 - 286	Formation and properties of TiC thin films by pulsed Nd/YAG laser deposition Suda Y, Kawasaki H, Doi K, Hiraishi S
287 - 290	Deposition of fine carbon particles using pulsed ArF laser ablation assisted by inductively coupled plasma Suda Y, Nishimura T, Ono T, Akazawa M, Sakai Y, Homma N
291 - 297	Absolute total and partial cross-sections for the electron impact ionization of TiCl4 Basner R, Schmidt M, Becker K, Tarnovsky V, Deutsch H
298 - 302	In situ spectroscopic ellipsometry for plasma-carburising process Moritani A, Yamada T, Kitamura T, Katayama H, Noda Y, Kanayama N
303 - 310	Radical kinetics for polymer film deposition in fluorocarbon (C4F8, C3F6 and C5F8) plasmas Takahashi K, Itoh A, Nakamura T, Tachibana K
311 - 325	SiO2 etching in inductively coupled C2F6 plasmas: surface chemistry and two-dimensional simulations Feldsien J, Kim D, Economou DJ
VII - VII	Proceedings of the 2nd International Workshop on basic aspects of non-equilibrium plasmas interacting with surfaces (BANPIS-2000) - Huis Ten Bosch, Nagasaki, Japan, January 28-30, 2000 -Preface Tachibana K, Economou DJ, Graves DB, Kroesen GMW, Ono K, Sugai H