Thin Solid Films

Thin Solid Films, Vol.515, No.12 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (74 articles)

4843 - 4845	Proceedings of the international symposium on dry process - DPS 2005 Fujiwara N, Stamate E, Yeom GY, Shiratani M, Chang HY, Economou DJ, Kusano E, Chang JP
4846 - 4852	Plasma/reactor walls interactions in advanced gate etching processes Ramos R, Cunge G, Joubert O, Sadeghi N, Mori M, Vallier L
4853 - 4859	Controlling the ion flux on substrates of different geometry by sheath-lens focusing effect Stamate E, Sugai H
4860 - 4863	Laser-induced fluorescence ion diagnostics in light of plasma processing McWilliams R, Booth JP, Hudson EA, Thomas J, Zimmerman D
4864 - 4868	Study of plasma charging-induced white pixel defect increase in CMOS active pixel sensor Tokashiki K, Bai K, Baek K, Kim Y, Min G, Kang C, Cho H, Moon J
4869 - 4873	Plasma parameters in the vicinity of the quartz window of a low pressure surface wave discharge produced in O-2 Nakao S, Stamate E, Sugai H
4874 - 4878	Profile simulation of high aspect ratio contact etch Kim D, Hudson EA, Cooperberg D, Edelberg E, Srinivasan M
4879 - 4882	MD simulations of amorphous SiO2 thin film formation in reactive sputtering deposition processes Taguchi M, Hamaguchi S
4883 - 4886	Molecular dynamics simulation analyses on injection angle dependence of SiO2 sputtering yields by fluorocarbon beams Kawase T, Hamaguchi S
4887 - 4891	Investigation of the ion dose non-uniformity caused by sheath-lens focusing effect on silicon wafers Holtzer N, Stamate E, Toyoda H, Sugai H
4892 - 4896	Threshold voltage shift of submicron p-channel MOSFET due to Si surface damage from plasma etching process Kim GH, Kang YR, Kim WJ, Kim SY, Kim CI
4897 - 4900	Control of substrate surface temperature in millisecond annealing technique using thermal plasma jet Okada T, Higashi S, Kaku H, Koba N, Murakami H, Miyazaki S
4901 - 4904	Fabrication and characteristics of out-of-plane piezoelectric micro grippers using MEMS processes Jeon CS, Park JS, Lee SY, Moon CW
4905 - 4908	Atmospheric plasma-calcination of mesoporous tungsten oxide utilizing plasma dielectric barrier discharge Baroch P, Hieda J, Saito N, Takai O
4909 - 4912	Change of the argon-based atmospheric pressure large area plasma characteristics by the helium and oxygen gas mixing Rhee JK, Kim DB, Moon SY, Choe W
4913 - 4917	Feasibility study of material surface modification by millimeter size plasmas produced in a pin to plane electrode configuration Kim DB, Rhee JK, Moon SY, Choe W
4918 - 4922	A novel deep etching technology for Si and quartz materials Morikawa Y, Koidesawa T, Hayashi T, Suu K
4923 - 4927	Etching characteristics and modeling for oval-shaped contact Park SC, Lim SH, Shin CH, Min GJ, Kang CJ, Cho HK, Moon JT
4928 - 4932	Improvement in gate LWR with plasma curing of ArF photoresists Ando A, Matsui E, Matsuzawa NN, Yamaguchi Y, Kugimiya K, Yoshida M, Salam KMA, Kusakabe T, Tatsumi T
4933 - 4936	Control of oxidation on NiSix during etching and ashing processes Sakamori S, Yonekura K, Fujiwara N, Kosaka T, Ohkuni M, Tateiwa K
4937 - 4940	Effects of radical-distribution control on etching-profile uniformity in dielectric etching Kobayashi H, Yokogawa K, Maeda K, Kanekiyo T, Izawa M
4941 - 4944	Controlling gate-CD uniformity by means of a CD prediction model and wafer-temperature distribution control Kanno S, Miya G, Tanaka J, Masuda T, Kuwahara K, Sakaguchi M, Makino A, Tsubone T, Fujii T
4945 - 4949	Chemical dry etching of silicon oxide in F-2/Ar remote plasmas Kang SC, Kim DJ, Hwang JY, Yun YB, Lee NE, Jang YC, Bae GH
4950 - 4954	Effect of doping elements on ZnO etching characteristics with CH4/H-2/Ar plasma Shin MH, Park MS, Jung SH, Boo JH, Lee NE
4955 - 4959	Dry etching of magnesium oxide thin films by using inductively coupled plasma for buffer layer of MFIS structure Kim GH, Kim CI
4960 - 4965	Sacrificial CVD film etch-back process for air-gap Cu interconnects Uno S, Katsuyama K, Noguchi J, Sato K, Oshima T, Katsuyama M, Hara K
4966 - 4970	Suppression of hydrogen-ion drift into underlying layers using plasma deposited silicon oxynitride film during high-density plasma chemical vapor deposition Murata T, Yamaguchi T, Sawada M, Shimizu S, Asai K, Kobayashi K, Miyatake H, Yoneda M
4971 - 4974	Growth of crystallized ge films from VHF inductively-coupled plasma of H-2-diluted GeH4 Sakata T, Makihara K, Murakami H, Higashi S, Miyazaki S
4975 - 4979	Epitaxial growth of lithium niobate film using metalorganic chemical vapor deposition Akiyama Y, Shitanaka K, Murakami H, Shin YS, Yoshida M, Imaishi N
4980 - 4982	Ni-silicide precursor for gate electrodes Ishikawa M, Muramoto I, Machida H, Imai S, Ogura A, Ohshita Y
4983 - 4987	High-speed mu c-Si films deposition and large-grain poly-Si films deposition by surface wave discharge Hotta Y, Toyoda H, Sugai H
4988 - 4991	Improved crystallization characteristics of ZnO thin film grown onto a-C : H film used as a buffer layer Kim EK, Lee TY, Park YS, Ghosh S, Hong B, Kim YS, Song JT
4992 - 4995	Growth of VO2 films with metal-insulator transition on silicon substrates in inductively coupled plasma-assisted sputtering Okimura K, Kubo N
4996 - 4999	Sputter deposition and surface treatment of TiO2 films for dye-sensitized solar cells using reactive RF plasma Sung YM, Kim HJ
5000 - 5003	Properties of plasma enhanced chemical vapor deposited silicon nitride for the application in multicrystalline silicon solar cells Yoo J, Dhungel SK, Yi J
5004 - 5007	Refractive index and etched structure of silicon nitride waveguides fabricated by PECVD Yoon DH, Yoon SG, Kim YT
5008 - 5011	Carbon incorporation process in GaAsN films grown by chemical beam epitaxy using MMHy or DMHy, as the N source Suzuki H, Nishimura K, Lee HS, Ohshita Y, Ima NK, Yamaguchi M
5012 - 5018	Suppression of 193-nm photoresist deformation by H-2 addition to fluorocarbon plasma in via-hole etching Yonekura K, Yoshikawa K, Fujiwara Y, Sakamori S, Fujiwara N, Kosaka T, Ohkuni M, Tateiwa K
5019 - 5024	Novel organosiloxane vapor annealing process for improving properties of porous low-k films Kohmura K, Tanaka H, Oike S, Murakami M, Fujii N, Takada S, Ono T, Seino Y, Kikkawa T
5025 - 5030	Characterization and integration of new porous low-k dielectric (k < 2.3) for 65 nm technology and beyond Choi KK, Cho IH, Park SJ, Lim JE, Jung OJ, Park JH, Min BS, Hwang SB, Ko MJ, Lee JG
5031 - 5034	Influences of atomic hydrogen on porous low-k dielectric for 45-nm node Tomioka K, Soda E, Kobayashi N, Takata M, Uda S, Ogushi K, Yuba Y, Akasaka Y
5035 - 5039	The structures of low dielectric constant SiOC thin films prepared by direct and remote plasma enhanced chemical vapor deposition Heo J, Kim HJ, Han J, Shon JW
5040 - 5044	Plasma enhanced chemical vapor deposition of low dielectric constant SiOC(-H) films using MTES/O-2 precursor Navamathavan R, Choi CK
5045 - 5048	Effect of additive gases on the selective etching of ZrOx film using inductively coupled BCl3-based plasmas Park SD, Lim JH, Yeom GY
5049 - 5053	Phase transition characteristics of Bi/Sn doped Ge2Sb2Te5 thin film for PRAM application Park TJ, Choi SY, Kang MJ
5054 - 5058	Formation of (001)-textured grain in (111) polycrystalline silicon film Oh JH, Kim EH, Kang DH, Cheon JH, Kim KH, Jang J
5059 - 5064	Electromagnetic sources of nonuniformity in large area capacitive reactors Howling AA, Sansonnens L, Hollenstein C
5065 - 5069	Electrical characteristics of poly(3-hexylthiophene) organic thin film transistor with electroplated metal gate electrodes on polyimide Seol YG, Lee JG, Lee NE, Lee SS, Ahn J
5070 - 5074	Synthesis and blue electrolurninescent properties of zinc (II) [2-(2-hydroxyphenyl)berizoxazole] Kim WS, You JM, Lee BJ, Jang YK, Kim DE, Kwon YS
5075 - 5078	White OLEDs based on novel emissive materials such as Zn(HPB)(2) and Zn(HPB)q Jang YK, Kim DE, Kim WS, Kim BS, Kwon OK, Lee BJ, Kwon YS
5079 - 5083	Theoretical study of a new phosphorescent iridium(III) quinazoline complex Lee YH, Kim YS
5084 - 5089	Heteroleptic tris-cyclometalated iridium(III) complexes with phenylpridine and diphenylquinoline derivative ligands Park YH, Kim YS
5090 - 5094	Efficient red-emitting phosphorescent iridium(III) complexes of fluorinated 2.4-diphenylquinolines Park GY, Kim YS, Ha YK
5095 - 5098	Organic light-emitting devices with a mixed layer acting as a hole transport and as an emitting/electron transport layer Yoon YB, Kim TW, Yang HW, Kim JH, Seo JH, Kim YK
5099 - 5102	Highly efficient organic light-emitting diodes fabricated utilizing nickel-oxide buffer layers between the anodes and the hole transport layers Im HC, Choo DC, Kim TW, Kim JH, Seo JH, Kim YK
5103 - 5108	Optical and electrical properties of p-type transparent conducting CuAlO2 thin film Kim DS, Park SJ, Jeong EK, Lee HK, Choi SY
5109 - 5112	HfO2 gate insulator formed by atomic layer deposition for thin-film-transistors Jeong SW, Lee HJ, Kim KS, You MT, Roh Y, Noguchi T, Xianyu W, Jung J
5113 - 5117	Effects of SiO2 addition on discharge characteristics of the MgO protective layer in plasma display panel Lee HK, Kim JW, Park SJ, Choi SY
5118 - 5122	Wall charge characteristics in accordance with square and ramped reset pulse in alternating current plasma display panels (AC-PDPs) Lee SB, Lee JH, Lee HJ, Moon MW, Oh PY, Song KB, Choi EH
5123 - 5130	One-dimensional carbon and ZnO Ting JM, Liao KH, Chou TL
5131 - 5135	Fabrication of dye sensitized solar cell using TiO2 coated carbon nanotubes Lee TY, Alegaonkar PS, Yoo JB
5136 - 5141	Mechanical properties of electrospun PVA/MWNTs composite nanofibers Jeong JS, Moon JS, Jeon SY, Park JH, Alegaonkar PS, Yoo JB
5142 - 5146	Field-emission characteristics of diamond-like amorphous carbon films deposited by mixed gas (N-2 or H-2) controlled i-C4H10 supermagnetron plasma Kinoshita H, Yamashita M
5147 - 5152	Submicron optical near-field diffraction patterns obtained by irradiation of octadecyltrimethoxysilane self-assembled monolayers with light at 157 nm Nae FA, Saito N, Takai O
5153 - 5157	Realization of various sub-micron metal patterns using room temperature nanoimprint lithography Sung JH, Lee MW, Lee SG, Park SG, Lee EH, O BH
5158 - 5162	Bicrystalline gallium oxide nanobelts Kim HW, Shim SH
5163 - 5166	Study on electrical conduction of viologen derivatives using scanning tunneling microscopy Lee NS, Shin HK, Qian DJ, Kwon YS
5167 - 5171	Fabrication of nano-pillar chips by a plasma etching technique for fast DNA separation Ogawa R, Ogawa H, Oki A, Hashioka S, Horiike Y
5172 - 5178	Surface modification of poly(dimethylsiloxane) for controlling biological cells' adhesion using a scanning radical microjet Tan HML, Fukuda H, Akagi T, Ichiki T
5179 - 5183	Amperometric biosensor based on direct electrochemistry of hemoglobin in poly-allylamine (PAA) film Kafi AKM, Lee DY, Park SH, Kwon YS
5184 - 5187	Controlled drug release using nanoporous anodic aluminum oxide on stent Kang HJ, Kim DJ, Park SJ, Yoo JB, Ryu YS
5188 - 5192	Time evolution of electrode voltage distribution in large-area capacitively coupled plasmas Matsukuma M, Hamaguchi S
5193 - 5196	Plasma and antenna characteristics of a linearly extended inductively coupled plasma system using multi-polar magnetic field Kim KN, Lim JH, Yeom GY
5197 - 5201	The volt-ampere characteristics of a DC arc plasmatron with a distributed anode spot Lee HJ, Plaksin VY, Riaby VA