Thin Solid Films

Thin Solid Films, Vol.520, No.10 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (32 articles)

3713 - 3713	Special Issue: 7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-7) Preface Ginley D, Kamiya T, Shigesato Y, Hosono H
3714 - 3720	Advances in understanding of transparent conducting oxides Robertson J, Gillen R, Clark SJ
3721 - 3728	Energy band alignment at interfaces of semiconducting oxides: A review of experimental determination using photoelectron spectroscopy and comparison with theoretical predictions by the electron affinity rule, charge neutrality levels, and the common anion rule Klein A
3729 - 3735	Rapid thermal annealing of sputter-deposited ZnO/ZnO:N/ZnO multilayered structures Watanabe F, Shirai H, Fujii Y, Hanajiri T
3736 - 3740	Low-temperature deposition of crystallized TiO2 thin films Yasuda Y, Kamikuri K, Tobisaka M, Hoshi Y
3741 - 3745	The electrical and optical properties of indium zinc tin oxide thin films with different Sn/Zn ratio Damisih, Ma HC, Kim JJ, Lee HY
3746 - 3750	High-rate deposition of Ta-doped SnO2 films by reactive magnetron sputtering using a Sn-Ta metal-sintered target Muto Y, Nakatomi S, Oka N, Iwabuchi Y, Kotsubo H, Shigesato Y
3751 - 3754	In-situ analyses on the reactive sputtering process to deposit Al-doped ZnO films using an Al-Zn alloy target Tsukamoto N, Oka N, Shigesato Y
3755 - 3759	Optical and electrical properties of heat-resistant Sb-doped Sn1-xHfxO2 transparent conducting films Ueda K, Kishigawa Y, Takano Y
3760 - 3763	Ti-doped Gd2O3 sensing membrane for electrolyte-insulator-semiconductor pH sensor Kao CH, Wang JC, Lai CS, Huang CY, Ou JC, Wang HY
3764 - 3768	Amorphous structure and electrical performance of low-temperature annealed amorphous indium zinc oxide transparent thin film transistors Lee S, Bierig B, Paine DC
3769 - 3773	The effect of metallization contact resistance on the measurement of the field effect mobility of long-channel unannealed amorphous In-Zn-O thin film transistors Lee S, Park H, Paine DC
3774 - 3777	Threshold voltage shift by controlling Ga in solution processed Si-In-Zn-O thin film transistors Choi JY, Kim S, Lee SY
3778 - 3782	Stability and high-frequency operation of amorphous In-Ga-Zn-O thin-film transistors with various passivation layers Nomura K, Kamiya T, Hosono H
3783 - 3786	Effect of magnesium oxide passivation on the performance of amorphous indium-gallium-zinc-oxide thin film transistors Yoo DY, Chong E, Kim DH, Ju BK, Lee SY
3787 - 3790	Effects of low-temperature ozone annealing on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors Ide K, Kikuchi Y, Nomura K, Kamiya T, Hosono H
3791 - 3795	Operation model with carrier-density dependent mobility for amorphous In-Ga-Zn-O thin-film transistors Abe K, Takahashi K, Sato A, Kumomi H, Nomura K, Kamiya T, Hosono H
3796 - 3799	Comparative analysis of temperature thermally induced instability between Si-In-Zn-O and Ga-In-Zn-O thin film transistors Lee SY, Kim DH, Kim B, Jung HK, Kim DH
3800 - 3802	Modeling of amorphous InGaZnO thin film transistors using an empirical mobility function based on the exponential deep and tail states Shin JH, Cheong WS, Hwang CS, Chung SM
3803 - 3807	Influence of rapid thermal annealing on surface texture-etched Al-doped ZnO films prepared by various magnetron sputtering methods Minami T, Hirano T, Miyata T, Nomoto J
3808 - 3812	Photovoltaic properties of n-type amorphous In-Ga-Zn-O and p-type single crystal Si heterojunction solar cells: Effects of Ga content Lee K, Nomura K, Yanagi H, Kamiya T, Hosono H
3813 - 3818	Sputtered nickel oxide thin film for efficient hole transport layer in polymer-fullerene bulk-heterojunction organic solar cell Widjonarko NE, Ratcliff EL, Perkins CL, Sigdel AK, Zakutayev A, Ndione PF, Gillaspie DT, Ginley DS, Olson DC, Berry JJ
3819 - 3822	Influence of Cu2O surface treatment on the photovoltaic properties of Al-doped ZnO/Cu2O solar cells Nishi Y, Miyata T, Nomoto J, Minami T
3823 - 3828	Thermochromic fenestration with VO2-based materials: Three challenges and how they can be met Li SY, Niklasson GA, Granqvist CG
3829 - 3834	Quantum dot phosphors and their application to inorganic electroluminescence device Omata T, Tani Y, Kobayashi S, Otsuka-Yao-Matsuo S
3835 - 3838	Fabricating transparent waveguide for wireless communication Ogino T, Ohashi N, Hishita S, Sakaguchi I, Adachi Y, Nakajima K, Haneda H
3839 - 3842	Electrochromic properties of nickel oxide based thin films sputter deposited in the presence of water vapor Green SV, Watanabe M, Oka N, Niklasson GA, Granqvist CG, Shigesato Y
3843 - 3846	Band-edge luminescence from SrTiO3: No polaron effect Yamada Y, Kanemitsu Y
3847 - 3851	Real-time investigation on photocatalytic oxidation of gaseous methanol with nanocrystalline WO3-TiO2 composite films Sadale SB, Noda K, Kobayashi K, Yamada H, Matsushige K
3852 - 3856	CF4 plasma effect combined with rapid thermal annealing for high-k Er2O3 dielectrics Kao CH, Fan HC, Cheng SN, Liao CJ
3857 - 3861	Investigation of Ti-doped Gd2O3 charge trapping layer with HfO2 blocking oxide for memory application Kao CH, Chen CC, Huang CH, Huang CY, Lin CJ, Ou JC
3862 - 3864	Stable deposition of silicon oxynitride thin films with intermediate refractive indices by reactive sputtering Nakanishi Y, Kato K, Omoto H, Tomioka T, Takamatsu A