1 - 24 |
Ionized physical vapor deposition (IPVD): A review of technology and applications Helmersson U, Lattemann M, Bohlmark J, Ehiasarian AP, Gudmundsson JT |
25 - 30 |
Nickel films: Nonselective and selective photochemical deposition and properties Smirnova NV, Boitsova TB, Gorbunova VV, Alekseeva LV, Pronin VP, Kon'uhov GS |
31 - 35 |
Fabrication of graphite nanopillars and nanocones by reactive ion etching Choi S, Park H, Lee S, Koh KH |
36 - 42 |
Kinetic study of chemical vapor deposition of WSix films from WF6 and SiH2Cl2: Determination of molecular size and reactivity of gas species Saito T, Shimogaki Y, Egashira Y, Sugawara K, Takahiro K, Nagata S, Yamaguchi S, Komiyama H |
43 - 46 |
Theoretical study of current transfer in thin variable-gap p-n structures with Ohmic contacts Sokolovskii BS |
47 - 51 |
Effect of Si content in SiGe islands on the critical size for shape evolution Deng N, Chen PY |
52 - 56 |
Indium sulfide thin films deposited by the spray ion layer gas reaction technique Allsop NA, Schonmann A, Belaidi A, Muffler HJ, Mertesacker B, Bohne W, Strub E, Rohrich J, Lux-Steiner MC, Fischer CH |
57 - 59 |
Phase control of Al2O3 thin films grown at low temperatures Andersson JM, Wallin E, Helmersson U, Kreissig U, Munger EP |
60 - 63 |
Deposition of indium oxide thin films assisted by gold nanoparticles in cyclohexane Niidome Y, Hisanabe H, Kawasawa T, Yamada S |
64 - 71 |
Structural and optical properties of direct current sputtered zinc aluminum oxides with a high Al concentration Mohamed SH, Drese R |
72 - 77 |
A family of smoothing algorithms based on the for electron and other spectroscopies Chebyshev filter Lopez-Camacho E, Garcia-Cortes A, Palacio C |
78 - 83 |
Optimized measurement of strained Si thickness and SiGe virtual substrate composition by spectroscopic ellipsometry Vineis CJ, Erdtmann M, Leitz CW |
84 - 89 |
Dynamics and corrosion resistance of amine-cured organically modified silicate coatings on aluminum alloys Wu KH, Chang TC, Yang CC, Wang GP |
90 - 94 |
Effects of substrate temperature on the properties of Ga-doped ZnO by pulsed laser deposition Park SM, Ikegami T, Ebihara K |
95 - 98 |
Dielectric and ferroelectric properties of pulsed laser deposited lead zirconate titanate (65/35) thin film Pandey SK, James AR, Prakash C, Goel TC, Zimik K |
99 - 102 |
Fabrication of CdS-ZnS layered thin films by hydrothermal seeded growth method Ren T, Lei ZB, Luan GY, Jia GQ, Zhang J, Yu R, Li C |
103 - 109 |
Surface coating of small SiO2 particles with TiO2 thin layer by using barrel-sputtering system Akamaru S, Higashide S, Hara M, Abe T |
110 - 113 |
Density functional investigation of the electronic structure of cobalt phthalocyanine monolayer Bialek B, Kim IG, Lee JI |
114 - 117 |
The growth of single cubic phase ZnS thin films on silica glass by plasma-assisted metalorganic chemical vapor deposition Zhang ZZ, Shen DZ, Zhang JY, Shan C, Lu YM, Liu YC, Li BH, Zhao DX, Yao B, Fan XW |
118 - 124 |
TaSiN diffusion barriers deposited by reactive magnetron sputtering Letendu F, Hugon MC, Agius B, Vickridge I, Berthier C, Lameille JM |
125 - 135 |
Spectroscopic properties of the mixed J-aggregate of unsymmetric merocyanine dyes in wide temperature range Yamaguchi A, Kometani N, Yonezawa Y |
136 - 141 |
Optical and mechanical properties of tantalum oxynitride thin films deposited by reactive magnetron sputtering Banakh O, Steinmann PA, Dumitrescu-Buforn L |
142 - 147 |
delta-Bi2O3 thin films prepared by reactive sputtering: Fabrication and characterization Fan HT, Pan SS, Teng XM, Ye C, Li GH, Zhang LD |
148 - 151 |
Improvement of electrical stability of polycrystalline ZnO thin films via intentional post-deposition hydrogen doping Myong SY, Park SI, Lim KS |
152 - 158 |
Study of fast diffusion species in Sc/Si multilayers by W-based marker analysis Voronov DL, Zubarev EN, Kondratenko VV, Pershin YP, Sevryukova VA, Bugayev YA |
159 - 165 |
Charge storage in silicon-implanted silicondioxide layers examined by scanning probe microscopy Beyer R, Beyreuther E, von Borany J, Weber J |
166 - 169 |
Optical properties of InN films grown by molecular beam epitaxy at different conditions Chen PP, Makino H, Li TX, Wang JB, Lu W, Yao T |
170 - 174 |
Investigation of coefficient of thermal expansion of silver thin film on different substrates using X-ray diffraction Zoo Y, Adams D, Mayer JW, Alford TL |
175 - 181 |
Chemical bonding of nitrogen in low-energy implanted chromium Palacio C, Arranz A, Diaz D |
182 - 186 |
Effects of forming gas annealing on the memory characteristics of Ge nanocrystals embedded in LaAiO(3) high-k dielectrics for flash memory device application Lu XB, Lee PF, Dai JY |
187 - 192 |
Study of composition modulation in Cu/Co(Cu) multilayers electrodeposited using pulse trains Gupta D, Nayak AC, Sharma M, Singh RR, Kulkarni SK, Pandey RK |
193 - 200 |
The nucleation of Ni on carbon microelectrodes and its electrocatalytic activity in hydrogen evolution Petrovic Z, Metikos-Hukovic M, Grubac Z, Omanovic S |
201 - 205 |
Charge generation during oxidation of thin Hf metal films on silicon Gougousi T, Terry DB, Parsons GN |
206 - 211 |
Surface modification of austenitic stainless steel on the surface of electric contact during low frequency current circulation Nachez L, Gomez BJ, Ferron J, Feugeas J |
212 - 216 |
Photoelectrochemical analysis on the passive film formed on Ti in pH 8.5 buffer solution Kim DY, Ahn SJ, Kwon H |
217 - 222 |
Coating of carbon short fibers with thin ceramic layers by chemical vapor deposition Hackl G, Gerhard H, Popovska N |
223 - 234 |
Diffusional phase transformations in self-stressed solid films Zhen Y, Leo PH |
235 - 242 |
Effects of nanoscale thickness and elastic nonlinearity on measured mechanical properties of polymeric films Oommen B, Van Vliet KJ |
243 - 247 |
Deformation of thin solid film/liquid layer/substrate structures with rough liquid layer/substrate interface Gu Y, He P, Zheng B, Liu Z |
248 - 252 |
A study of the influence of the of the annealing processes and interfaces with deposited SiO2 from tetra-ethoxy-silane for reducing the thermal budget in the gate definition of 4H-SiC devices Perez-Tomas A, Godignon P, Mestres N, Perez R, Millan J |
253 - 257 |
5 nm thick lanthanum oxide thin films grown on Si(100) by atomic layer deposition: The effect of post-annealing on the electrical properties Jo SJ, Ha JS, Park NK, Kang DK, Kim BH |
258 - 263 |
Effects of parylene buffer layer on flexible substrate in organic light emitting diode Yoon YS, Park HY, Lim YC, Choi KG, Lee KC, Park GB, Lee CJ, Moon DG, Han JI, Kim YB, Nam SC |
264 - 268 |
Dielectric properties of nitric oxide-annealed gate oxides grown on nitrogen-implanted silicon substrates Chen YY, Chien CH, Lou JC |
269 - 274 |
Microstructure and optical properties of TiO2 thin films prepared by low pressure hot target reactive magnetron sputtering Domaradzki J, Kaumarek D, Prociow EL, Borkowska A, Schmeisser D, Beuckert G |
275 - 282 |
Determination of infrared optical parameters of SrTiO3 thin films from the reflectivity spectrum Almeida BG, Pietka A, Caldelas P, Mendes JA, Ribeiro JL |
283 - 288 |
A study of the optical and electronic properties of poly (vinylidene fluoride-trifluoroethylene) copolymer thin films Li YX, Yan L, Shrestha RP, Yang D, Ounaies Z, Irene EA |
289 - 294 |
Fabrication of densely packed, well-ordered, high-aspect-ratio silicon nanopillars over large areas using block copolymer lithography Gowrishankar V, Miller N, McGehee MD, Misner MJ, Ryu DY, Russell TP, Drockenmuller E, Hawker CJ |
295 - 299 |
Effect of oxygen at the Cu-SiCxNy interface on electromigration performance of interconnect structures Liniger EG, Dziobkowski C |
300 - 306 |
Direct regrowth of thin strained silicon films on planarized relaxed silicon-germanium virtual substrates Leitz CW, Vineis CJ, Carlin J, Fiorenza J, Braithwaite G, Westhoff R, Yang V, Carroll M, Langdo TA, Matthews K, Kohli P, Rodder M, Wise R, Lochtefeld A |
307 - 310 |
Reduction in double-positioning boundaries in 3C-SiC epitaxial films fabricated on Si (111) substrates Kusumori T, Muto H, Okada M, Jin P |
311 - 318 |
Characterization of copper-hydrogen peroxide film growth kinetics DeNardis D, Rosales-Yeomans D, Borucki L, Philipossian A |
319 - 324 |
Investigations on oxygen diffusion in annealing processes of non-stoichiometric amorphous indium tin oxide thin films Neubert T, Neumann F, Schiffmann K, Willich P, Hangleiter A |
325 - 330 |
Crystalline thin films of transition metal hexacyanochromates grown under Langmuir monolayer Bagkar N, Choudhury S, Kim KH, Chowdhury P, Lee SI, Yakhmi JV |
331 - 337 |
Crystallinity and electrical properties of neodymium-substituted bismuth titanate thin films Chen YC, Hsiung CP, Chen CY, Gan JY, Sun YM, Lin CP |
338 - 346 |
Surface composition gradients of immobilized cell signaling molecules. Epidermal growth factor on gold Wang Q, Bohn PW |
347 - 355 |
Effect of close packing of octadecyltriethoxysilane molecules on monolayer morphology at the air/water interface Francis R, Louche G, Duran RS |
356 - 363 |
Solid phase crystallized polycrystalline thin-films on glass from evaporated silicon for photovoltaic applications Song DY, Inns D, Straub A, Terry ML, Campbell P, Aberle AG |
364 - 368 |
Morphological and electrochemical studies of spherical boron doped diamond electrodes de Barros RCM, Ferreira NG, Azevedo AF, Corat EJ, Sumodjo PTA, Serrano SHP |
369 - 373 |
Photoconductivity of amorphous As-Se-Sb thin films Dahshan A, Amer HH, Moharam AH, Othman AA |
374 - 379 |
Bias sputter deposited Ni/Al2O3 cermet thin films for gas flow sensors Chiu KF, Dai CC |
380 - 384 |
Effect of hydrogen on the low-temperature growth of polycrystalline silicon film deposited by SiCl4/H-2 Huang R, Lin XY, Huang WY, Yao RH, Yu YP, Lin KX, Wei JH, Zhu ZS |
385 - 390 |
Thermal conductivity of sintered porous silicon films Wolf A, Brendel R |
391 - 398 |
A numerical study on the effect of mobilities and initial profile in thin film morphology evolution Liu Z, Yu HH |