1 - 5 |
Mesoscopic scenario of strain-relief at metal interfaces Stepanyuk VS, Tsivlin DV, Sander D, Hergert W, Kirschner J |
6 - 10 |
Steady-state surface stress induced in noble gas sputtering Dahmen K, Giesen M, Ikonomov J, Starbova K, Ibach H |
11 - 14 |
Structure and electronic properties of ultrathin gold films on vicinal silicon(111) Schock M, Surgers C, von Lohneysen H |
15 - 19 |
Stiffness constants for anisotropic hexagonal ultra thin overlayers Kunert HW, Schonfeldt JHC |
20 - 24 |
Strain energy density for hexagonal ultra thin overlayers Schonfeldt JHC, Kunert HW |
25 - 29 |
Self-organisation of chemisorbed systems: elastic origin and kinetic factors Prevot G, Croset B |
30 - 33 |
Short and long range ordered surface structures of segregated species on Fe(100) Fujii J, Galaktionov M, Giovanelli L, Panaccione G, Bondino F, Vobornik I, Rossi G |
34 - 39 |
Microscopic mechanisms of thermal and driven diffusion of non rigid molecules on surfaces Fusco C, Fasolino A |
40 - 46 |
Interatomic potential for Pd and molecular-dynamics simulation of diffusion in Pd/Pd(111) system Papanicolaou NI, Papaconstantopoulos DA |
47 - 51 |
Ultrathin Pd and Pt films on W(211) Block J, Kolodziej JJ, Rowe JE, Madey TE, Schroder E |
52 - 55 |
Kinetic Monte Carlo simulations of heteroepitaxial growth Biehl M, Ahr M, Kinzel W, Much F |
56 - 65 |
Morphology evolution in a growing film Trofimov VI |
66 - 71 |
Rate equations model for layer epitaxial growth kinetics Trofimov VI, Mokerov VG |
72 - 75 |
Lineshape analysis of RHEED pattern: scaling behavior and linewidth oscillations Dulot F, Kierren B, Malterre D |
76 - 82 |
Underpotential deposition of cadmium on Cu(111) and Cu(100) Humann S, Hommrich J, Wandelt K |
83 - 86 |
Autocatalytic reaction model: a phenomenology for nucleation-coalescence-growth of thin films Suemitsu M, Togashi H, Abe T |
87 - 92 |
Magnetization dynamics of surfaces and few-monolayer films Rossi G, Sirotti F, Panaccione G |
93 - 97 |
Improvements of the lateral resolution of the MFM technique Koblischka MR, Hartmann U, Sulzbach T |
98 - 101 |
Ferrimagnetic 4f spin order in O/Gd surface monoxide Krupin OW, Prieto JE, Gorovikov S, Starke K, Kaindl G |
IX - IX |
Proceedings of symposium J on growth and evolution of ultra thin films: Surface and Interface Geometric & Electronic Structure, of the E-MRS 2002 Spring Conference, Strasbourg, France, June 18-21, 2002 - Preface Horn K |
102 - 106 |
Influence of annealing on Co/Au multilayers: a structural and magnetic study Gubbiotti G, Carlotti G, Albertini F, Casoli F, Bontempi E, Depero LE, Koo H, Gomez RD |
107 - 110 |
Non-contact measurement of conductivity during growth of metal ultrathin films Fahsold G, Priebe A, Magg N, Pucci A |
111 - 114 |
A novel approach for the investigation of mesoscopic contact mechanics Buzio R, de Mongeot FB, Boragno C, Valbusa U |
115 - 118 |
High-resolution core-level study of the Ca/Si(111)-(2 X 1) surface Sakamoto K, Takeyama W, Zhang HM, Uhrberg RIG |
119 - 122 |
Confinement of Shockley states in ultra thin films of Ag on Cu(111) Bendounan A, Cercellier H, Fagot-Revurat Y, Kierren B, Yurov VY, Malterre D |
123 - 128 |
Angle-scanned X-ray photoelectron diffraction of clean and hydrogen terminated 2 X 1-reconstructed Si(100) surfaces Dreiner S, Westphal C, Schurmann M, Zacharias H |
129 - 132 |
The step structure of the Si(557) surface Henzler M, Zhachuk R |
133 - 138 |
Initial stages of ultra thin Ti film growth on Si(111)-7 X 7 surface Hsu HF, Lu MC, Fang CK, Chen LJ, Hsiao HL, Pi TW |
139 - 143 |
LDA and molecular dynamics determination of Ag deposition onto (100) surfaces in silicon Mazzone AM |
144 - 149 |
Selective growth of SiGe quantum dots on hydrogen-passivated Si(100) surfaces Le Thanh V, Ngo TTT, Bui H, Bouchier D, Le TTT, Phan KH |
150 - 155 |
Study of surface roughening of tensily strained Si1-x-yGexCy films grown by ultra high vacuum-chemical vapor deposition Calmes C, Bouchier D, Debarre D, Le Thanh V, Clerc C |
156 - 159 |
Mechanism of germanium nanoinclusions formation in a silicon matrix during submonolayer MBE Cirlin GE, Zakharov ND, Egorov VA, Werner P, Ustinov VM, Ledentsov NN |
160 - 164 |
Real time spectroscopic ellipsometric analysis of Ge film growth on Si(001) substrates Palange E, Di Gaspare L, Evangelisti E |
165 - 169 |
Anisotropically etched Si surface and the electrical properties of Si/HgCdTe heterostructures Gorbach TY, Kuzma M, Smertenko PS, Svechnikov SV, Wisz G |
170 - 175 |
Growth mode transitions in molecular-beam epitaxy of GaAs(001) Trofimov VI, Park HS |
176 - 180 |
A new method to suppress the In diffusion of InGaNAS/GaAs quantum wells grown by molecular beam epitaxy Peng CS, Jouhti T, Pavelescu EM, Konttinen J, Pessa M |
181 - 184 |
Doping impurity distribution and crystal quality evaluation of AlGaAs : Si films (0.22 < x < 0.86) by electrochemical etching technique Fedorenko Y, Jouhti T, Konttinen J, Likonen J, Pessa M |
185 - 189 |
Raman study of nitrogen-doped ZnSSe/GaAs epilayers Kontos AG, Raptis YS, Strassburg M, Pohl UW, Bimberg D |
190 - 194 |
Interface properties of ultra-thin HfO2 films grown by atomic layer deposition on SiO2/Si Renault O, Samour D, Rouchon D, Holliger P, Papon AM, Blin D, Marthon S |
195 - 200 |
Structure and morphology of ultrathin NiO layers on Ag(001) Giovanardi C, di Bona A, Altieri S, Luches P, Liberati M, Rossi F, Valeri S |
201 - 205 |
Thickness dependence of photoemission and X-ray fluorescence spectra in epitaxial NiO layers on Ag(100) Krasnikov SA, Preobrajenski AB, Chasse T, Szargan R |
206 - 210 |
First principles calculation of the geometric and electronic structure of (Al2O3)(n)(O-x) clusters with n < 15 and x=0, 1, 2 Fernandez EM, Balbas LC, Borstel G, Soler JM |
211 - 215 |
Surface-activation processes and ion-solid interactions during the nucleation and growth of ultra-thin amorphous carbon films Patsalas P, Logothetidis S, Kennou S, Gravalidis C |
216 - 222 |
Non-destructive probing of interfacial oxidation and nitridation states at RTP Si-oxides Hoffmann P, Schmeisser D, Roters G, Nenyei Z |
223 - 226 |
Growth of ultra thin PbS films by SILAR technique Puiso J, Lindroos S, Tamulevicius S, Leskela M, Snitka V |
227 - 231 |
Pentacene self-aggregation at the Au(110)-(1x2) surface: growth morphology and interface electronic states Menozzi C, Corradini V, Cavallini M, Biscarini F, Betti MG, Mariani C |
232 - 236 |
Adsorption processes in layer-by-layer films of poly(o-methoxyaniline): the role of aggregation de Souza NC, Silva JR, Rodrigues CA, Costa LD, Giacometti JA, Oliveira ON |
237 - 241 |
Structure and morphological study of nanometer W and W3O thin films Maille L, Sant C, Le Paven-Thivet C, Legrand-Buscema C, Garnier P |
242 - 247 |
Thermal stability of metal nanoclusters formed by low-pressure plasma sputtering Thomann AL, Salvetat JP, Breton Y, Andreazza-Vignolle C, Brault P |
248 - 252 |
Interface of tantalum oxide films on silicon by UV annealing at low temperature Fang Q, Zhang JY, Wang ZM, Wu JX, O'Sullivan BJ, Hurley PK, Leedham TL, Davies H, Audier MA, Jimenez C, Senateur JP, Boyd IW |
253 - 256 |
The adsorption of orthocarborane on cobalt Bernard L, Caruso AN, Xu B, Doudin B, Dowben PA |
257 - 262 |
Oriented ZnO thin films synthesis by sol-gel process for laser application Znaidi L, Illia GJAAS, Benyahia S, Sanchez C, Kanaev AV |
263 - 268 |
Investigation of TiO2-doped HfO2 thin films deposited by photo-CVD Fang Q, Zhang JY, Wang ZM, Wu JX, O'Sullivan BJ, Hurley PK, Leedham TL, Davies H, Audier MA, Jimenez C, Senateur JP, Boyd IW |
269 - 272 |
Apparatus development for diamond synthesis from acetone vapor with low energy consumption Onishi F, Gyoda K, Takagi Y |