Thin Solid Films

Thin Solid Films, Vol.321, No.1-2 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (48 articles)

1 - 10	Si/Si1-xGex and Si/Si1-yCy heterostructures: materials for high-speed field-effect transistors Schaffler F
11 - 14	Carbon-containing group IV heterostructures on Si : properties and device applications Osten HJ, Barth R, Fischer G, Heinemann B, Knoll D, Lippert G, Rucker H, Schley P, Ropke W
15 - 20	Optimization of growth conditions for strained Si/Si1-yCy structures Joelsson KB, Ni WX, Pozina G, Hultman L, Hansson GV
21 - 25	Optimized processing for differentially molecular beam epitaxy-grown SiGe(C) devices Lippert G, Osten HJ, Blum K, Sorge R, Schley P, Kruger D, Fischer G
26 - 32	Low-temperature molecular beam epitaxy of Si1-x-yGexCy/Si quantum well structures : electrical and optical properties Grutzmacher D, Hartmann R, Schnappauf P, Gennser U, Muller E, Bachle D, Dommann A
33 - 40	Molecular beam epitaxial growth and photoluminescence investigation of Si1-yCy layers Zerlauth S, Penn C, Seyringer H, Stangl J, Brunthaler G, Bauer G, Schaffler F
41 - 46	Comparison of Si/Si1-x-yGexCy and Si/Si1-yCy heterojunctions grown by rapid thermal chemical vapor deposition Hoyt JL, Mitchell TO, Rim K, Singh DV, Gibbons JF
47 - 50	Electrical and optical properties of phosphorus doped Ge1-yCy Dashiell MW, Troeger RT, Roe KJ, Khan AS, Orner B, Olowolafe JO, Berger PR, Wilson RG, Kolodzey J
51 - 54	Effective mass measurement in two-dimensional hole gas in strained Si1-x-yGexCy/Si(100) modulation doped heterostructures Chang CL, Shukla SP, Pan W, Venkataraman V, Sturm JC, Shayegan M
55 - 59	Alignment of Ge three-dimensional islands on faceted Si(001) surfaces Sakamoto K, Matsuhata H, Tanner MO, Wang DW, Wang KL
60 - 64	Self-organized germanium quantum dots grown by molecular beam epitaxy on Si(100) Jiang ZM, Zhu HJ, Lu F, Qin J, Huang DM, Wang X, Hu CW, Chen YF, Zhu ZQ, Yao T
65 - 69	Suppression of phonon replica in the radiative recombination of an MBE-grown type-II Ge/Si quantum dot Fukatsu S, Sunamura H, Shiraki Y, Komiyama S
70 - 75	Influence of pre-grown carbon on the formation of germanium dots Schmidt OG, Lange C, Eberl K, Kienzle O, Ernst F
76 - 80	Direct MBE growth of SiGe dots on ordered mesoporous glass-coated Si substrate Tang YS, Cai SJ, Jin GL, Wang KL, Soyez HM, Dunn BS
81 - 85	Gas-source molecular beam epitaxial growth of SiGe alloy-based 'naked' quantum wells Kishimoto Y, Shiraki Y, Fukatsu S
86 - 91	Characterization of self-assembled Ge islands on Si(100) by atomic force microscopy and transmission electron microscopy Wohl G, Schollhorn C, Schmidt OG, Brunner K, Eberl K, Kienzle O, Ernst F
92 - 97	Bimodal height distribution of self-assembled germanium islands grown on Si0.84Ge0.16 pseudo-substrates Pedersen EV, Jensen F, Shiryaev SY, Petersen JW, Hansen JL, Larsen AN
98 - 105	Fabrication of SiGe quantum dots : a new approach based on selective growth on chemically prepared H-passivated Si(100) surfaces Le Thanh V
106 - 110	Quantum wire transistor at locally grown edges Kaesen F, Hansch W, Eisele I, Kalus M
111 - 115	Growth of SiGe/Si multiple quantum wells by ultra-high-vacuum electron cyclotron resonance chemical vapor deposition Joo SJ, Yoon E, Hwang SH, Whang KW, Chun SK, Kim YD
116 - 119	Effect of Sb as a surfactant on the inner diffusion of epilayer Ge atoms into Si substrate Jiang ZM, Xu A, Hu DZ, Zhu HJ, Liu XH, Wang XJ, Mao MC, Zhang XJ, Hu JH, Huang DM, Wang X
120 - 124	Atomic hydrogen for the formation of abrupt Sb doping profiles in MBE-grown Si Thompson PE, Silvestre C, Twigg M, Jernigan G, Simons DS
125 - 130	Surfactant-grown low-doped germanium layers on silicon with high electron mobilities Hofmann KR, Reinking D, Kammler M, Horn-von Hoegen M
131 - 135	Role of strain in dopant surface segregation during Si and SiGe growth by molecular beam epitaxy Ni WX, Hansson GV, Cardenas J, Svensson BG
136 - 140	Artificial substrates for n- and p-type SiGe heterostructure field-effect transistors Hackbarth T, Kibbel H, Glueck M, Hoeck G, Herzog HJ
141 - 147	X-ray scattering investigation of the interfaces in Si/Si1-xGex superlattices on Si(001) grown by MBE and UHV-CVD Baribeau JM, Lafontaine H
148 - 152	Quantitative secondary ion mass spectrometry analysis of SiO2 desorption during in situ heat cleaning Kasper E, Bauer M, Oehme M
153 - 157	Spontaneous oscillator strength modulation in MBE-grown Si/Ge superlattices Miyake Y, Shiraki Y, Fukatsu S
158 - 162	Photoluminescence in UHV-CVD-grown Si1-xGex quantum wells on Si(100) : band alignment variation with excitation density and applied uniaxial stress Rowell NL, Aers GC, Lafontaine H, Williams RL
163 - 166	Effect of layer thickness variation on light scattering by acoustic phonons in SiGe/Si superlattices Liu XH, Huang DM, Wang XJ, Zhu HJ, Wang X
167 - 171	Structural characterization of a UHV/CVD-grown SiGe HBT with graded base Dion M, Houghton DC, Rowell NL, Perovic DD, Aers GC, Rolfe SJ, Sproule GI, Phillips JR
172 - 180	Silicon germanium heterostructures in electronics : the present and the future Paul DJ
181 - 185	Electrical properties of two-dimensional electron gases grown on cleaned SiGe virtual substrates Paul DJ, Ahmed A, Griffin N, Pepper M, Churchill AC, Robbins DJ, Wallis DJ
186 - 195	Near and mid infrared silicon/germanium based photodetection Presting H
196 - 200	Formation of thin gate oxides on SiGe with atomic oxygen Ogryzlo EA, Zheng L, Heinrich B, Myrtle K, Lafontaine H
201 - 205	Bistable diodes grown by silicon molecular beam epitaxy Zhu XG, Zheng XY, Pak M, Tanner MO, Wang KL
206 - 214	Electric field tailoring in MBE-grown vertical sub-100 nm MOSFETs Hansch W, Rao VR, Fink C, Kaesen F, Eisele I
215 - 218	Quantum confined Stark shifts in type-I SiGe quantum structures Kim JY
219 - 222	Luminescence from erbium- and oxygen-doped SiGe grown by molecular beam epitaxy Neufeld E, Sticht A, Brunner K, Abstreiter G, Bay H, Buchal C, Holzbrecher H
223 - 227	Incorporation and luminescence properties of Er2O3 and ErF3 doped Si layers grown by molecular beam epitaxy Ni WX, Joelsson KB, Du CX, Pozina G, Buyanova IA, Chena WM, Hansson GV, Monemar B
228 - 233	Application of selective epitaxial growth in MBE for short-duration gating systems Cers VA, Ballik EA
234 - 240	Epitaxial Si/SiO2 low dimensional structures Ishikawa Y, Shibata N, Fukatsu S
241 - 244	Characterization of SiGe strained heterostructures grown by molecular beam epitaxy using a Si effusion cell Yaguchi H, Yamamoto T, Shiraki Y
245 - 250	Molecular beam epitaxy growth and thermal stability of Si1-xGex layers on extremely thin silicon-on-insulator substrates Brunner K, Dobler H, Abstreiter G, Schafer H, Lustig B
251 - 255	Self-ordering of CoSi2 precipitates and epitaxial layer growth of CoSi2 on Si(100) Mantl S, Hacke M, Bay HL, Kappius L, Mesters S
256 - 260	Si selective epitaxial growth using Cl-2 pulsed molecular flow method Aoyama T, Saito S, Tatsumi T
261 - 264	Low temperature electrical surface passivation of MBE-grown pin diodes by hydrogen and oxygen plasma processes Strass A, Hansch W, Kaesen F, Fehlauer G, Bieringer P, Fischer A, Eisele I
VIII - VIII	Proceedings of the 7th International Symposium on Silicon Molecular Beam Epitaxy - Banff, Canada, July 13-17, 1997 - Preface Baribeau JM