Thin Solid Films

Thin Solid Films, Vol.517, No.1 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (137 articles)

1 - 1	Fifth International Conference on Silicon Epitaxy and Heterostructures (ICSI-5) Preface Derrien J, Le Thanh V, Kasper E
2 - 5	The present and the future of spintronics Fert A
6 - 9	DC and low-frequency-noise characterization of epitaxially grown raised-emitter SiGe HBTs Washio K
10 - 13	Very low-temperature epitaxial growth of silicon and germanium using plasma-assisted CVD Sakuraba M, Muto D, Mori M, Sugawara K, Murota J
14 - 16	Application of SiGe bulk crystal as a substrate for strain-controlled heterostructure materials Usami N, Nihei R, Azuma Y, Yonenaga I, Nakajima K, Sawano K, Shiraki Y
17 - 19	Evaluation of relaxation and misfit dislocation blocking in strained silicon on virtual substrates Parsons J, Beer CS, Leadley DR, Capewell AD, Grasby TJ
20 - 22	Ion-assisted MBE for misfit-dislocation templates serving ordered growth of SiGe islands Lyutovich K, Oehme M, Werner J, Bahouchi B, Kasper E, Hofer C, Teichert C
23 - 26	High Ge content SGOI substrates obtained by the Ge condensation technique: A template for growth of strained epitaxial Ge Souriau L, Terzieva V, Vandervorst W, Clemente F, Brijs B, Moussa A, Meuris M, Loo R, Caymax M
27 - 30	Reliability of ultra-thin titanium dioxide (TiO(2)) films on strained-Si Bera MK, Mahata C, Maiti CX
31 - 33	Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescence Wang D, Nakashima H, Tanaka M, Sadoh T, Miyao M, Morioka J, Kitarnura T
34 - 37	Molecular beam epitaxy growth of Si/SiGe bound-to-continuum quantum cascade structures for THz emission Zhao M, Karim A, Hansson GV, Ni WX, Townsend P, Lynch SA, Paul DJ
38 - 40	Microstructural change of dislocation structure around SiGe/Si interface in SGOI wafer with ramping process Ii S, Takaki Y, Ikeda K, Nakashima H, Nakashima H
41 - 44	Control of electronic charged states of Si-based quantum dots for floating gate application Miyazaki S, Makihara K, Ikeda M
45 - 49	Epitaxial growth of two-dimensional electron gas (2DEG) in strained silicon for research on ultra-low energy electronic processes Liu J, Kim JH, Xie YH, Lu TM, Lai K
50 - 54	Photoluminescence of Si nanocrystals formed by the photosynthesis Nozaki S, Chen CY, Kimura S, Ono H, Uchida K
55 - 56	Exciton condensation in the compressively strained SiGe layers of Si/SiGe/Si heterostructures Burbaev TM, Bagaev VS, Bobrik EA, Kurbatov VA, Novikov AV, Rzaev MM, Sibeldin NN, Schaffler F, Tsvetkov VA, Tarakanov AG, Zaitsev VV
57 - 61	Growth and characterization of Ge nanostructures selectively grown on patterned Si Cheng MH, Ni WX, Luo GL, Huang SC, Chang JJ, Lee CY
62 - 64	MBE growth conditions for Si island formation on Ge (001) substrates Pachinger D, Lichtenberger H, Chen G, Stangl J, Hesser G, Schaffler F
65 - 68	Anisotropy of the surface thermodynamic properties of silicon Muller P, Metois JJ
69 - 70	The influence of elastic strains on the growth and properties of vertically ordered Ge "hut"-clusters Nikiforov AI, Ulyanov VV, Teys SA, Gutakovsky AK, Pchelyakov OP
71 - 74	Impact of emitter fabrication on the yield of SiGe HBTs Heinemann B, Rucker H, Tillack B
75 - 79	Highly doped Si and Ge formed by GILD (gas immersion laser doping); from GILD to superconducting silicon Cammilleri D, Fossard F, Debarre D, Manh CT, Dubois C, Bustarret E, Marcenat C, Achatz P, Bouchier D, Boulmer J
80 - 83	Silicide and germanide technology for contacts and gates in MOSFET applications Zaima S, Nakatsuka O, Kondo H, Sakashita M, Sakai A, Ogawa M
84 - 86	Selective epitaxial growth of B-doped SiGe and HCl etch Si for the formation of SiGe:B recessed source and drain (pMOS transistors) Radamson HH, Kolahdouz M, Ghandi R, Hallstedt J
87 - 89	Fabrication of high quality SiGe relaxed thin layers by ion implantation technique with Ar, Si and Ge ions Sawano K, Fukumoto A, Hoshi Y, Yamanaka J, Nakagawa K, Shiraki Y
90 - 92	Selective vapor phase etching of SiGe versus Si by HCl Yamamoto Y, Kopke K, Tillack B
93 - 97	Selective etching of Si(1-x)Ge(x) versus Si with gaseous HCl for the formation of advanced CMOS devices Loubet N, Kormann T, Chabanne G, Denorme S, Dutartre D
98 - 100	Precise control of doping profile and crystal quality improvement of SiGe HBTs using continuous epitaxial growth technology Oda K, Miura M, Shimamoto H, Washio K
101 - 104	Multi-gate devices for the 32 nm technology node and beyond: Challenges for Selective Epitaxial Growth Collaert N, Rooyackers R, Hikavyy A, Dixit A, Leys F, Verheyen P, Loo R, Jurczak M, Biesemans S
105 - 109	Studying the impact of carbon on device performance for strained-Si MOSFETs Lee MH, Chang ST, Peng CY, Hsieh BF, Maikap S, Liao SH
110 - 112	Impact of Ge fraction modulation upon electrical characteristics of hole resonant tunneling diodes with Si/Strained Si(1-x)Ge(x)/Si(100) heterostructure Seo T, Sakuraba M, Murota J
113 - 116	pMOS transistor with embedded SiGe: Elastic and plastic relaxation issues Hikavyy A, Bhouri N, Loo R, Verheyen P, Clemente F, Hopkins J, Trussell R, Caymax M
117 - 120	Sidewall transfer lithography for reliable fabrication of nanowires and deca-nanometer MOSFETs Hallstedt J, Hellstrom PE, Radamson HH
121 - 124	Germanium-based nanophotonic devices: Two-dimensional photonic crystals and cavities Boucaud P, El Kurdi M, David S, Checoury X, Li X, Ngo TP, Sauvage S, Bouchier D, Fishman G, Kermarrec O, Campidelli Y, Bensahel D, Akatsu T, Richtarch C, Ghyselen B
125 - 127	Room-temperature light-emission from Ge quantum dots in photonic crystals Xia J, Nemoto K, Ikegami Y, Usami N, Nakata Y, Shiraki Y
128 - 131	Photoluminescence of strained Si(1-x-y)Ge(x)C(y) epilayers on Si(100) Rowell NL, Lockwood DJ, Baribeau JM
132 - 133	Performance and reliability of SiGe photodetectors Sarid G, Ginsburg E, Dosunmu F, Morse M
134 - 136	Infrared absorption, multiphonon processes and time reversal effect on Si and Ge band structure Kunert HW, Machatine AGJ, Malherbe JB, Barnas J, Hoffmann A, Wagner MR
137 - 139	Germanium waveguide photodetectors integrated on silicon with MBE Oehme M, Werner J, Kaschel M, Kirfel O, Kasper E
140 - 143	Si (001) surface preparation for the antiphase domain free heteroepitaxial growth of GaP on Si substrate Kunert B, Nemeth I, Reinhard S, Volz K, Stolz W
144 - 147	Role of hydrogen at germanium/dielectric interfaces Van de Walle CG, Weber JR, Janotti A
148 - 151	GaAs on Ge for CMOS Brammertz G, Caymax M, Meuris M, Heyns M, Mols Y, Degroote S, Leys M
152 - 154	Implantation defects and n-type doping in Ge and Ge rich SiGe Peaker AR, Markevich VP, Hamilton B, Hawkins ID, Slotte J, Kuitunen K, Tuomisto F, Satta A, Simoen E, Abrosimov NV
155 - 158	Suppression of Ge-O and Ge-N bonding at Ge-HfO(2) and Ge-TiO(2) interfaces by deposition onto plasma-nitrided passivated Ge substrates Lee S, Long JP, Lucovsky G, Luning J
159 - 162	Tensile strained Ge layers on strain-relaxed Ge(1-x)Sn(x)/virtual Ge substrates Takeuchi S, Sakai A, Nakatsuka O, Ogawa M, Zaima S
163 - 166	Charge trapping characteristics in high-k gate dielectrics on germanium Mahata C, Bera MK, Bose PK, Maiti CK
167 - 169	Ge wire MOSFETs fabricated by three-dimensional Ge condensation technique Irisawa T, Numata T, Hirashita N, Moriyama Y, Nakaharai S, Tezuka T, Sugiyama N, Takagi S
170 - 171	Photoelectric method for non-contact characterization of SiGe Tsidilkovski E, Steeples K
172 - 177	Benefits and side effects of high temperature anneal used to reduce threading dislocation defects in epitaxial Ge layers on Si substrates Terzieva V, Souriau L, Caymax M, Brunco DP, Moussa A, Van Elshocht S, Loo R, Clemente F, Satta A, Meuris M
178 - 180	(110) Ultrathin GOI layers fabricated by Ge condensation method Dissanayake S, Shuto Y, Sugahara S, Takenaka M, Takagi S
181 - 183	Atomically controlled hetero-epitaxy of Fe(3)Si/SiGe for spintronics application Miyao M, Ueda K, Ando YI, Kumano M, Sadoh T, Narumi K, Maeda Y
184 - 190	Spintronics for nanoelectronics and nanosystems Wang KL, Zhao ZM, Khitun A
191 - 196	Epitaxial growth of Mn(5)Ge(3)/Ge(111) heterostructures for spin injection Olive-Mendez S, Spiesser A, Michez LA, Le Thanh V, Glachant A, Derrien J, Devillers T, Barski A, Jamet M
197 - 200	Epitaxial growth of high-kappa oxides on silicon Merckling C, Saint-Girons G, Delhaye G, Patriarche G, Largeau L, Favre-Nicollin V, El-Kazzi M, Regreny P, Vilquin B, Marty O, Botella C, Gendry M, Grenet G, Robach Y, Hollinger G
201 - 203	Characterization of lanthanum lutetium oxide thin films grown by atomic layer deposition as an alternative gate dielectric Roeckerath M, Heeg T, Lopes JMJ, Schubert J, Mantl S, Besmehn A, Myllymaki P, Niinisto L
204 - 206	Dependences of effective work functions of TaN on HfO(2) and SiO(2) on post-metallization anneal Sugimoto Y, Kajiwara M, Yamamoto K, Suehiro Y, Wang D, Nakashima H
207 - 208	Reliability degradation of thin HfO(2)/SiO(2) gate stacks by remote RF hydrogen and deuterium plasma treatment Efthymiou E, Bernardini S, Zhang JF, Volkos SN, Hamilton B, Peaker AR
209 - 212	Initial oxidation of HF-acid treated SiGe(100) surfaces under air exposure investigated by synchrotron radiation X-ray photoelectron spectroscopy and IR absorption spectroscopy Narita Y, Hirose F, Nagato M, Kinoshita Y
213 - 215	Thermal stability improvement of Si(1-y)C(y) layers by SiO(2) cap layers Ishihara H, Inoue K, Yamada A, Konagai M
216 - 218	Low temperature high-rate growth of crystalline Ge films on quartz and crystalline Si substrates from VHF inductively-coupled plasma of GeH(4) Sakata T, Makihara K, Deki H, Higashi S, Miyazaki S
219 - 221	Structural change of atomic-order nitride formed on Si(1-x)Ge(x)(100) and Ge(100) by heat treatment Akiyama N, Sakuraba M, Tillack B, Murota J
222 - 226	Numerical simulation of the UV-excimer laser assisted modification of amorphous hydrogenated Si/Ge bilayers to graded epitaxial heterostructures Conde JC, Fornarini L, Chiussi S, Gontad F, Gonzalez P, Leon B, Martelli S
227 - 228	MBE growth of low-defect Si layers highly doped with Sb Werner J, Oehme M, Kirfel O, Lyutovich K, Kasper E
229 - 231	Si epitaxial growth on self-limitedly B adsorbed Si(1-x)Ge(x)(100) by ultraclean low-pressure CVD system Ishibashi K, Sakuraba M, Murota J, Inokuchi Y, Kunii Y, Kurokawa H
232 - 234	Microstructure difference of Ni induced poly-crystallized SiGe by changing the annealing atmosphere Yamanaka J, Horie T, Mitsui M, Arimoto K, Nakagawa K, Sato T, Sawano K, Shiraki Y, Moritani T, Doi M
235 - 238	Growth temperature dependence of the crystalline morphology of SiGe films grown on Si(110) substrates with compositionally step-graded buffer Arimoto K, Watanabe M, Yamanaka J, Nakagawa K, Sawano K, Shiraki Y, Usami N, Nakajima K
239 - 241	Investigations of hydrogen sensors made of porous silicon Galstyan VE, Martirosyan KS, Aroutiounian VM, Arakelyan VM, Arakelyan AH, Soukiassian PG
242 - 244	High-quality epitaxial Si growth at low temperatures by atmospheric pressure plasma CVD Yasutake K, Ohmi H, Kirihata Y, Kakiuchi H
245 - 247	Charge traps and interface traps in non-volatile memory device with Oxide-Nitride-Oxide structures Seo MW, Kwak DW, Cho WS, Park CJ, Kim WS, Cho HY
248 - 250	Stress-relaxation mechanism in ultra-thin SiGe on insulator formed by H(+) irradiation-assisted Ge condensation method Tanaka M, Kenjo A, Sadoh T, Miyao M
251 - 253	Comprehensive study of low temperature (< 1000 degrees C) oxidation process in SiGe/SOI structures Tanaka M, Ohka T, Sadoh T, Miyao M
254 - 256	Characterizations of polycrystalline SiGe films on SiO(2) grown by gas-source molecular beam deposition Mitsui M, Tamoto M, Arimoto K, Yamanaka J, Nakagawa K, Sato T, Usami N, Sawano K, Shiraki Y
257 - 258	The influence of Si coverage in a chip on layer profile of selectively grown Si(1-x)Ge(x) layers using RPCVD technique Kolahdouz M, Ghandi R, Hallstedt J, Osling M, Wise R, Wejtmans H, Radamson HH
259 - 261	Doping concentration control of SiGe layers by spectroscopic ellipsometry Fursenko O, Bauer J, Zaumseil P, Yamamoto Y, Tillack B
262 - 264	Numerical simulations of the anisotropic elastic field of screw dislocation networks in twist boundaries Madani S, Outtas T, Adami L
265 - 268	Strain, composition and crystalline perfection in thin SiGe layers studied by Raman spectroscopy Perova TS, Moore RA, Lyutovich K, Oehme M, Kasper E
269 - 271	Ex-situ wet clean and in-situ hydrogen clean for Si and SiGe epitaxy Kormann T, Garnier P, Chabanne G, Fortuin A
272 - 274	Relaxed germanium films on silicon (110) Wietler TF, Bugiel E, Hofmann KR
275 - 277	Free surface nanopaterning with burried hexagonal dislocations array. Simulation of anisotropic elastic fields Outtas T, Madani S, Adami L
278 - 280	Misfit dislocation generation in SiGe epitaxial layers supersaturated with intrinsic point defects Vdovin VI, Zakharov ND
281 - 284	Observation of in-plane strain fluctuation in relaxed SiGe virtual substrate Huang WP, Cheng HH, Sun G, Lou RF, Yeh JH, Shen TM
285 - 288	Characterization of anisotropic relaxation rate of SGOI (110) substrates Moriyama Y, Hirashita N, Sugiyama N, Takagi S
289 - 292	Single swift heavy ion-induced trail of discontinuous nanostructures on SiO(2) surface under grazing incidence Carvalho AMJF, Touboul AD, Marinoni M, Guasch C, Ramonda M, Lebius H, Saigne F, Bonnet J
293 - 296	In situ scanning tunnelling microscopy investigations of Si epitaxial growth on pit-patterned Si (001) substrates Sanduijav B, Matei D, Chen G, Schaffler F, Bauer G, Springholz G
297 - 299	Formation of high-density Si nanodots by agglomeration of ultra-thin amorphous Si films Kondo H, Ueyama T, Ikenaga E, Kobayashi K, Sakai A, Ogawa M, Zaima S
300 - 302	Local strain in Si/Si(0.6)Ge(0.4)/Si(100) heterostructures by stripe-shape patterning Uhm J, Sakuraba M, Murota J
303 - 305	Electronic properties of Ge islands embedded in multilayer and superlattice structures Leitao JP, Sobolev NA, Correia MR, Carmo MC, Stepina N, Yakimov A, Nikiforov A, Magalhaes S, Alves E
306 - 308	Impact of impurity doping into Si quantum dots with Ge core on their electrical charging characteristics Makihara K, Ikeda M, Higashi S, Miyazaki S
309 - 312	MBE growth of Ge/Si quantum dots upon low-energy pulsed ion irradiation Stepina NP, Dvurechenskii AV, Ambrister VA, Smagina JV, Volodin VA, Nenashev AV, Leitao JP, do Carmo MC, Sobolev NA
313 - 316	Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO(2) for non-volatile memory device Stepina NP, Dvurechenskii AV, Armbrister VA, Kirienko VV, Novikov PL, Kesler VG, Gutakovskii AK, Smagina ZV, Spesivtzev EV
317 - 319	Influence of the crystal orientation of substrate on low temperature synthesis of silicon nanowires from Si(2)H(6) Akhtar S, Tanaka A, Usami K, Tsuchiya Y, Oda S
320 - 322	Fabrication of uniaxially strained silicon nanowires Feste SF, Knoch J, Buca D, Mantl S
323 - 326	Characterization of bonding structures of directly bonded hybrid crystal orientation substrates Toyoda E, Sakai A, Nakatsuka O, Isogai H, Senda T, Izunome K, Ogawa M, Zaima S
327 - 330	Localized laser thermal annealing of nanometric SiGe layers protected by a dielectric Bragg mirror Cammilleri D, Fossard F, Halbwax M, Manh CT, Yam N, Debarre D, Boulmer J, Bouchier D
331 - 333	Enhanced n-type dopant solubility in tensile-strained Si Bennett NS, Radamson HH, Beer CS, Smith AJ, Gwilliam RM, Cowern NEB, Sealy BJ
334 - 336	Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers Ghandi R, Kolahdouz M, Hallstedt J, Wise R, Wejtmans H, Radamson HH
337 - 339	SiGe quantum well thermistor materials Wissmar SGE, Radamsson HH, Yamamoto Y, Tillack B, Vieider C, Andersson JY
340 - 342	Investigation of strain states and thermal stability of strained-Si-on-Insulator (sSOI) structures Hoshi Y, Fukumoto A, Sawano K, Cayrefourcq I, Yoshimi M, Shiraki Y
343 - 345	Chemical bonding and graded interfacial transition regions at transition metal, Hf(Zr),/high-k gate dielectric, Hf(Zr)O(2), interfaces Lucovsky G, Whitten JL
346 - 349	High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth Takehiro S, Sakuraba M, Tsuchiya T, Murota J
350 - 352	Influence of thermal processing on the electrical characteristics of MOS capacitors on strained-silicon substrates Kelaidis N, Ioannou-Sougleridis V, Skarlatos D, Tsamis C, Krontiras CA, Georga SN, Kellerman B, Seacrist M
353 - 355	Strained-Si nMOSFET formed on very thin SiGe buffer layer fabricated by ion implantation technique Sawano K, Fukumoto A, Hoshi Y, Nakagawa K, Shiraki Y
356 - 358	The impact of uniaxial stress on subband structure and mobility of strain Si NMOSFETs Chang ST, Liao SH, Lin CY
359 - 361	Enhancement of room-temperature 2DHG conductivity in narrow and strained double-sides modulation doped Ge quantum well Myronov M, Shiraki Y, Mouri T, Itoh KM
362 - 364	Memory properties of oxide-nitride-oxynitride stack structure using ultra-thin oxynitrided film as tunneling layer for nonvolatile memory device on glass Jung S, Hwang S, Yi J
365 - 368	Epitaxy - A way to novel field effect devices Sulima T, Abelein U, Eisele I
369 - 371	Hydrogenated amorphous silicon deposited by pulsed DC magnetron sputtering. Deposition temperature effect Ben Abdelmournen A, Cherfi R, Kechoune M, Aoucher M
372 - 375	Elementary excitations in Si, Ge, and diamond time reversal affected Kunert HW, Machatine AGJ, Malherbe JB, Barnas J, Hoffmann A, Wagner MR
376 - 379	Polarization memory of blue and red luminescence from nanocrystalline porous silicon treated by high-pressure water vapor annealing Geoz B, Koyama H, Koshida N
380 - 382	Ge/Si (100) heterojunction photodiodes fabricated from material grown by low-energy plasma-enhanced chemical vapour deposition Osmond J, Isella G, Chrastina D, Kaufmann R, von Kanel H
383 - 384	Epitaxially grown emitters for thin film crystalline silicon solar cells Van Nieuwenhuysen K, Duerinckx F, Kuzma I, Payo MR, Beaucarne G, Poortmans J
385 - 387	Effect of growth temperature on photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layer Shaleev MV, Novikov AV, Yablonskiy AN, Drozdov YN, Kuznetsov OA, Lobanov DN, Krasilnik ZF
388 - 390	Simulation of p-i-n heterojunctions built on strain-compensated Si/Si(0.40)Ge(0.60)/Si multiple quantum wells for photodetection near 1.55 mu m Sfina N, Lazzari JL, Cuminal Y, Christol P, Said M
391 - 394	Tuning the luminescence emission of {105}-faceted Ge QDs superlattice using proton implantation and thermal annealing Moutanabbir O, Miyamoto S, Sagara A, Oshikawa H, Roh KM
395 - 397	Ab-initio vibrational properties of SiGe alloys Torres VJB, Coutinho J, Briddon PR, Barroso M
398 - 400	Comparative analysis of photo- and electroluminescence of multilayer structures with Ge(Si)/Si(001) self-assembled islands Drozdov YN, Krasilnik ZF, Kudryavtsev KE, Lobanov DN, Novikov AV, Shaleev MV, Shengurov DV, Shmagin VB, Yablonskiy AN
401 - 403	Ge growth over thin SiO(2) by UHV-CVD for MOSFET applications Renard C, Halbwax M, Cammilleri D, Fossard F, Yam V, Bouchier D, Zheng Y
404 - 406	Homo and hetero epitaxy of Germanium using isobutylgermane Attolini G, Bosi M, Musayeva N, Peosi C, Ferrari C, Arumainathan S, Timo G
407 - 411	Planar defect formation mechanism in Ge-rich SiGe-on-insulator substrates during Ge condensation process Hirashita N, Nakaharai S, Moriyama Y, Usuda K, Tezuka T, Sugiyama N, Takagi SI
412 - 415	SO-limited mobility in a germanium inversion channel with non-ideal metal gate Shah R, De Souza MM
416 - 418	Low temperature epitaxy and the importance of moisture control Leys FE, Hikavyy A, Machkaoutsan V, De Vos B, Geenen L, Van Daele B, Loo R, Caymax M
419 - 421	Electrically active hydrogen-implantation-induced defects in Ge crystals and SiGe alloys Markevich VP, Dobaczewski L, Nielsen KB, Litvinov VV, Petukh AN, Pokotilo YM, Abrosimov NV, Peaker AR
422 - 424	Temperature dependent epitaxial growth of ferromagnetic silicide Fe(3)Si on Ge substrate Ueda K, Sadoh T, Ando Y, Jonishi T, Narumi K, Maeda Y, Miyao M
425 - 427	Low temperature epitaxial growth of Fe(3)Si on Si(111) substrate through ultra-thin SiO(2) films Ueda K, Kumano M, Sadoh T, Miyao M
428 - 429	Resonant magnetic scattering of polarized X-rays at the Mn 2p edge from Mn(0.06)Ge(0.94) diluted magnetic semiconductor De Padova P, Perfetti P, Quaresima C, Zema N, Grazioli C, Spezzani C, Testa AM, Fiorani D, Olivieri B, Mariot JM, Taleb-Ibrahimi A, Richter MC, Heckmann O, Hricovini K
430 - 433	Low-temperature oriented growth in [CoPt/MgO](n) multi-layer Sadoh T, Kurosawa M, Kimura M, Ueda K, Koyanagi M, Miyao M
434 - 436	ALD growth, thermal treatments and characterisation of Al(2)O(3) layers Ghiraldelli E, Pelosi C, Gombia E, Chiavarotti G, Vanzetti L
437 - 440	Bulk defects in nano-crystalline and in non-crystalline HfO(2)-based thin film dielectrics Lee S, Seo H, Lucovsky G, Fleming LB, Ulrich MD, Luning J
441 - 443	Structural investigation of the LaAlO(3)(110) surface Mortada H, Derivaz M, Dentel D, Bischoff JL
444 - 446	Optical and electrical properties of negatively charged aluminium oxynitride films Jang K, Jung S, Lee J, Lee K, Kim J, Son H, Yi J
447 - 449	Study of silicon/oxides interfaces by means of Si2p resonant photoemission Tallarida M, Schmeisser D
450 - 452	Growth and structural characterization of cerium oxide thin films realized on Si(111) substrates by on-axis r.f. magnetron sputtering Ta MT, Briand D, Guhel Y, Bernard J, Pesant JC, Boudart B
453 - 455	Ellipsometric analysis of mixed metal oxides thin films Buiu O, Davey W, Lu Y, Mitrovic IZ, Hall S
456 - 458	Gate leakage properties in (Al(2)O(3)/HfO(2)/Al(2)O(3)) dielectric of MOS devices Nasrallah SAB, Bouazra A, Poncet A, Said M
459 - 461	Chemical and optical profiling of ultra thin high-k dielectrics on silicon Bernardini S, MacKenzie M, Buiu O, Bailey P, Noakes TCQ, Davey WM, Hamilton B, Hall S
462 - 464	Engineering of interfacial layer between HfAl(2)O(5) dielectric film and Si with a Ti-capping layer Cheng XH, Song ZR, Xing YM, Yu YH, Shen DS
465 - 467	Influence of preparing process on total-dose radiation response of high-k Hf-based gate dielectrics Song ZR, Cheng XH, Zhang EX, Xing YM, Yu YH, Zhang ZX, Wang X, Shen DS