Thin Solid Films

Thin Solid Films, Vol.409, No.1 Entire volume, number list

ISSN: 0040-6090 (Print)

In this Issue (27 articles)

1 - 7	Laser annealing effect of SiC films prepared by PECVD (plasma enhanced chemical vapor deposition) Cho NI, Kim YM, Lim JS, Hong C, Sul Y, Kim CK
8 - 14	Improved fabrication process for Ru/BST/Ru capacitor by liquid source chemical vapor deposition Tarutani M, Yamamuka M, Takenaga T, Kuroiwa T, Horikawa T
15 - 22	Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition Feng ZC, Zhang X, Chua SJ, Yang TR, Deng JC, Xu G
23 - 27	New control method for low temperature deposition limit of metalorganic chemical vapor deposition (MOCVD) by the introduction of organic vapor-application to ZrO2 film preparation Higashi N, Murakami Y, Machida H, Seki S, Sawada Y, Funakubo H
28 - 32	Surface roughness reducing effect of iodine sources (CH3I, C2H5I) on Ru and RuO2 composite films grown by MOCVD Kim JJ, Jung DH, Kim MS, Kim SH, Yoon DY
33 - 36	New control method of low deposition temperature limit of metal-organic chemical vapor deposition (MOCVD) by the introduction of organ vapor - Application to SrRuO3 film preparation Higashi N, Murakami Y, Machida H, Seki S, Sawada Y, Funakubo H
37 - 42	The possibility of pulsed laser deposited organic thin films for light-emitting diodes Hong C, Chae HB, Lee KH, Ahn SK, Kim CK, Kim TW, Cho NI, Kim SO
43 - 45	Real time monitoring of layer growth on planetary reactor((R)) by reflectance-anisotropy-spectroscopy Habets N, Schmitt T, Deufel M, Lunenburger M, Heuken M, Juergensen H
46 - 50	Highly-conducting indium-tin-oxide transparent films fabricated by spray CVD using ethanol solution of indium (III) chloride and tin (II) chloride Sawada Y, Kobayashi C, Seki S, Funakubo H
51 - 57	Density functional study on the adsorption and surface reactions on SiO2 in TiN-CVD using TiCl4 and NH3 Tanaka T, Nakajima T, Yamashita K
58 - 65	Encapsulating the electroluminescent phosphor micro-particles using a pulsed metal-organic chemical vapor deposition process in a fluidized bed Kim JM, Han GY, Chung CH
66 - 73	Density functional study on the reactivity of oxidized aluminum surfaces: effects of adsorbed metallic atoms (Au, Cu, Ti, V) Tanaka T, Nakajima T, Yamashita K
74 - 77	Growth kinetics of hydrogenated amorphous silicon carbide films by RF plasma-enhanced CVD using two kinds of source materials Kaneko T, Miyakawa N, Sone H, Yamazaki H
78 - 81	Magnetoresistance in carbon micro-coils obtained by chemical vapor deposition Fujii M, Matsui M, Motojima S, Hishikawa Y
82 - 87	Decomposition behaviors of bis(N-alkoxy-p-ketoiminate) titanium complexes in the depositions of titanium oxide and barium strontium titanate films Hong SH, Rim SK, Lee IM, Min YS, Kim D, Lee WI
88 - 97	Investigation of an upflow cold-wall CVD reactor by gas phase Raman spectroscopy Park C, Hwang JY, Huang M, Anderson TJ
98 - 104	Surface decomposition mechanism of Ti(OC3H7)(4) on a platinum surface Cho SI, Chung CH, Moon SH
105 - 111	Progress in ion-transport inorganic membranes by novel chemical vapor deposition (CVD) techniques Meng GY, Song HZ, Wang HB, Xia CR, Peng DK
112 - 115	Novel strained Si/relaxed SiGe channel PMOSFETs Li C, Luo GL, Liu ZN, Chen PY, Tsien PH
116 - 119	Epitaxial growth of ZnO thin films exhibiting room-temperature ultraviolet emission by atmospheric pressure chemical vapor deposition Kaiya K, Omichi K, Takahashi N, Nakamura T, Okamoto S, Yamamoto H
120 - 125	NH3 effect on the growth of carbon nanotubes on glass substrate in plasma enhanced chemical vapor deposition Han JH, Lee CH, Jung DY, Yang CW, Yoo JB, Park CY, Kim HJ, Yu S, Yi W, Park GS, Han IT, Lee NS, Kim JM
126 - 132	Effects of growth parameters on the selective area growth of carbon nanotubes Han JH, Choi SH, Lee TY, Yoo JB, Park CY, Kim HJ, Han IT, Yu S, Yi W, Park GS, Yang M, Lee NS, Kim JM
133 - 137	Ferroelectric properties of SrBi2Ta2O9 thin films with Bi2O3 buffer layer by liquid-delivery metalorganic chemical vapor deposition Shin WC, Choi KJ, Yoon SG
138 - 146	Atomic layer deposition (ALD): from precursors to thin film structures Leskela M, Ritala M
147 - 152	Effect of the neutral ligand (L) on the characteristics of hexafluoroacetylacetonate (hfac)Cu(I)-L precursor and on the copper deposition process Choi KK, Rhee SW
153 - 160	A challenge in molecular beam epitaxy of ZnO: control of material properties by interface engineering Ko HJ, Hong SK, Chen Y, Yao T
vii - vii	Preface Rhee SW, Yi GC, Yong KJ, Kim JJ, Hwang CS