1 - 4 |
Kinetically controlled reaction of 1,3-cyclohexadiene on Si(100) Teague LC, Boland JJ |
5 - 9 |
Si(111)2X2-Fe surface reacted with nitric oxide Hattori K, Nishimura T, Kataoka K, Shimamoto Y, Daimon H |
10 - 13 |
Initial oxidation process of an Si(111)-(7x7) surface studied by photoelectron spectroscopy Sakamoto K, Zhang HM, Uhrberg RIG |
14 - 17 |
Oxygen-plasma induced hydrogen desorption from hydrogen-terminated Si(100) and (111) surfaces investigated by infrared spectroscopy Shinohara M, Katagiri T, Iwatsuji K, Matsuda Y, Fujiyama H, Kimura Y, Niwano M |
18 - 22 |
Influence of Si(111)-Cr surface phases in the formation and conductivity of Fe and Yb monolayers at room temperature on Si(111) Galkin NG, Goroshko DL, Dotsenko SA, Gouralnik AS, Louchaninov IV |
23 - 27 |
STM imaging of buried P atoms in hydrogen-terminated Si for the fabrication of a Si : P quantum computer Oberbeck L, Curson NJ, Hallam T, Simmons MY, Clark RG |
28 - 30 |
Step-debunching in Sn/Si(001) surfaces Yoshimura M, Shibata H, An T, Ueda K |
31 - 34 |
Kink fluctuations at monoatomic step edges on the Si(111) surface Maeda S, Fukuda T, Nakayama H |
35 - 37 |
First principles calculation of indium migration barrier energy on an InAs(001) surface Fujiwara K, Ishii A, Aisaka T |
38 - 41 |
Formation mechanisms of monolayer pits having characteristic step-edge shapes on annealed GaAs (110)surfaces Ishii A, Aisaka T, Oh JW, Yoshita M, Akiyama H, Pfeiffer LN, West KW |
42 - 47 |
Spin-wave excitation observed by spin-polarized electron energy loss spectroscopy: a new method for the investigation of surface- and thin-film spin waves on the atomic scale Vollmer R, Etzkorn M, Kumar PSA, Ibach H, Kirschner J |
48 - 51 |
Translational energy induced reconstruction and absorption in the oxidation processes of Cu{111} Moritani K, Okada M, Sato S, Goto S, Kasai T, Yoshigoe A, Teraoka Y |
52 - 56 |
X-ray photoelectron spectroscopy and low-energy electron diffraction study on the oxidation of NiAl(110) surfaces at elevated temperatures Song W, Yoshitake M |
57 - 60 |
The magnetic domain structures of Fe thin films on rectangular land-and-groove substrates studied by spin-polarized secondary electron microscopy Ueda S, Iwasaki Y, Ushioda S |
61 - 64 |
Effect of Ar+ ion sputtering on the electronic transport of MgB2 surface Xu MX, Xiao ZW, Takano Y, Hatano T, Fujita D |
65 - 75 |
Scanning tunneling microscopy and spectroscopy studies on structural and electronic properties of thin films of Co oxides and oxide precursor states on Ag(001) Shantyr R, Hagendorf C, Neddermeyer H |
76 - 79 |
Electronic structure and reactivity of the TiO thin film formed on a TiC(100) surface Shirotori Y, Sawada K, Ozawa K, Edamoto K |
80 - 84 |
Surface features of self-organized SrTiO3 (001) substrates inclined in [100] and [110] directions Cho GB, Yamamoto M, Endo Y |
85 - 89 |
Atomic H-mediated (Si-14/Ge-1)(20) superlattice buffers for the growth of Si0.75Ge0.25 alloy layers with low residual strain Rahman MM, Tambo T, Tatsuyama C |
90 - 94 |
Theoretical study on generation and atomic structures of stacking-fault tetrahedra in Si film growth Kobayashi R, Nakayama T |
95 - 98 |
Molecular dynamics simulation of Ge surface segregation Tarus J, Nordlund K |
99 - 102 |
Enhanced crystal nucleation in a-Si on SiO2 by local Ge doping Sadoh T, Nagatomo K, Tsunoda I, Kenjo A, Enokida T, Miyao M |
103 - 106 |
Momentum effects of the molecular ion beam in SiC crystal growth Matsumoto T, Kiuchi M, Sugimoto S, Goto S |
107 - 111 |
Solid phase reaction in Ti(thin film)/Si(substrate) with Mo interlayer: SXES and PEEM study Labis J, Namatame H, Taniguchi A, Kamezawa C, Hirai A, Kusaka A, Iwami M |
112 - 115 |
Experimental and theoretical investigation on the structural properties of InN grown on sapphire Fujiwara K, Ishii A, Ohta J, Fujioka H, Oshima M |
116 - 119 |
Hot-mesh CVD for growth of GaN films on (100) GaAs Yasui K, Ishibashi M, Taima Y, Akahane T |
120 - 122 |
Crystallographic characterization of hetero-epitaxial growth manner of BP semiconductor on (111)-Si Yamashita T, Yamatake K, Odawara M, Udagawa T |
123 - 127 |
Impurity doping in molecular layer epitaxy of GaAs and its application to ultrashallow sidewall tunnel junctions Ohno T, Oyama Y, Saito K, Suto K, Nishizawa J |
128 - 130 |
Barrier height control for electron field emission by growing an ultra-thin AIN layer on GaN/Mo Nishida S, Yamashita T, Hasegawa S, Asahi H |
131 - 135 |
The structure, motphology, and composition of ultrathin Fe films on CoGa(100) at 550 K Kovacs DA, Verheij LK, David R, Franchy R |
136 - 140 |
RHEED study of Pd film growth on Al2O3 (111)/NiAl (110) Moroz V, Lykhach Y, Yoshitake A |
141 - 145 |
Transition from superparamagnetic to ferromagnetic state of ultrathin Fe films grown on inclined Al2O3(0001) substrates Shiratsuchi Y, Endo Y, Yamamoto M |
146 - 149 |
Sn film deposition on silica glass substrates Hishita S, Stryhal Z, Sakaguchi I, Ohashi N, Saito N, Haneda H |
150 - 154 |
Monte Carlo simulation on the initial stage of islands growth by soft-landed clusters Ohtomi K |
155 - 159 |
Structural and electrical properties of Nd2Ti2O7/Y2O3/Si structures through interface treatment Lee CK, Kim WS, Park HH |
160 - 163 |
Initial growth of SrBi2Ta2O9 thin films on various substrates Kawayama I, Kotani K, Tonouchi M |
164 - 169 |
Temperature effect on structural properties of boron oxide thin films deposited by MOCVD method Moon OM, Kang BC, Lee SB, Boo JH |
170 - 174 |
Finding a promising precursor for chemical vapor deposition of carbon nitride thin films Uddin MN, Notomi H, Kida T, Yamazato M, Nagano M |
175 - 179 |
In-situ transmission electron microscope observation of nitriding processes of titanium thin films by nitrogen-implantation Wang JJ, Kasukabe Y, Yamamura T, Yamamoto S, Fujino Y |
180 - 184 |
Nitriding transformation of titanium thin films by nitrogen implantation Kasukabe Y, Wang JJ, Yamamura T, Yamamoto S, Fujino Y |
185 - 189 |
Fabrication of Si/Ge nanoring structures by MBE Voigtlander B, Kawamura M, Paul N, Cherepanov V |
190 - 193 |
Artificially size- and position-controlled Ge dot formation using patterned Si Suda Y, Kaechi S, Kitayama D, Yoshizawa T |
194 - 198 |
Synthesis of conical Si array on Si(100) for a field electron emitter by plasma-enhanced chemical vapor deposition Lee KY, Honda S, Katayama M, Kuzuoka T, Baek YG, Ohkura S, Aoki K, Hirao T, Oura K |
199 - 203 |
Self-organization of beta-FeSi2 islands on Si(111)7x7 Galkin NG, Polyarnyi VO, Gouralnik AS |
204 - 207 |
Formation of silicon/silicide/oxide nanochains and their properties studied by electron holography Kohno H, Yoshida H, Ohno Y, Ichikawa S, Akita T, Tanaka K, Takeda S |
208 - 210 |
Formation of micromeshes by nickel silicide Ueda K, Yoshimura M |
211 - 214 |
Growth temperature effect on a self-assembled SiC nanostructure Matsumoto T, Kiuchi M, Sugimoto S, Goto S |
215 - 219 |
Growth of beta-SiC nanowires on Si(100) substrates by MOCVD using nickel as a catalyst Kang BC, Lee SB, Boo JH |
220 - 224 |
Fabrication of GaAs nanowire devices with self-aligning W-gate electrodes using selective-area MOVPE Ooike N, Motohisa J, Fukui T |
225 - 228 |
Strain-interactions between InAs/GaAs quantum dot layers Howe P, Abbey B, Le Ru EC, Murray R, Jones TS |
229 - 232 |
Growth of self-assembled GaInNAs quantum dots by atomic-H assisted RF molecular beam epitaxy Oshima R, Okada Y |
233 - 236 |
Indium nano-dot arrays formed by field-induced deposition with a Nano-Jet Probe for site-controlled InAs/GaAs quantum dots Ohkouchi S, Nakamura Y, Nakamura H, Asakawa K |
237 - 239 |
Position control of InAs quantum dots by AFM oxidation Ohashi R, Ohtsuka T, Ohta N, Yamada A, Konagai M |
240 - 243 |
Fabrication of InAs quantum dots by droplet heteroepitaxy on periodic arrays of InP nanopyramids Yoshida Y, Oga R, Lee WS, Fujiwara Y, Takeda Y |
244 - 247 |
Vapor-liquid-solid growth of vertically aligned InP nanowires by metalorganic vapor phase epitaxy Bhunia S, Kawamura T, Fujikawa S, Nakashima H, Furukawa K, Torimitsu K, Watanabe Y |
248 - 250 |
Heteroepitaxial metalorganic vapor phase epitaxial growth of InP nanowires on GaP(111)B Watanabe Y, Bhunia S, Fujikawa S, Kawamura T, Nakashima H, Furukawa K, Torimitsu K |
251 - 254 |
High-bias conductance of atom-sized Cu contacts Fujii A, Kusuda A, Mizobata J, Minowa T, Kurokawa S, Sakai A |
255 - 259 |
Ab initio calculations of quantum transport through Al atomic wire mixed with various atoms Hirose K, Kobayashi N, Tsukada M |
260 - 263 |
Magnetic properties of Co nano-dot arrays on vicinal Cu(001)-c(2x2)N surfaces Miyaoka H, Kawamura N, Iimoni T, Komori F |
264 - 267 |
Electronic transitions in silica glass during heavy-ion implantation Plaksin OA, Takeda Y, Okubo N, Amekura H, Kono K, Umeda N, Kishimoto N |
268 - 272 |
Magneto-optical Kerr spectra of nickel nanoparticles in silica glass fabricated by negative-ion implantation Amekura H, Takeda Y, Kishimoto N |
273 - 276 |
Positioning growth of ZnO whiskers/dots on sapphire substrates Yasui T, Yasuda M, Nezaki D, Takata M, Zhang BP, Segawa Y |
277 - 281 |
Ferroelectric properties of nano-size PZT grains determined by surface potential utilizing Kelvin force microscopy Choi S, Heo J, Kim D, Chung IS |
282 - 285 |
Carbon nanotube formation by an electron beam: alignment- and space-effect of the precursor Yasuda A, Mizutani W |
286 - 289 |
CVD growth of single-walled carbon nanotubes using size-controlled nanoparticle catalyst Kobayashi Y, Nakashima H, Takagi D, Homma Y |
290 - 294 |
Synthesis of randomly oriented carbon nanotubes on SiO2 substrates by thermal chemical vapor deposition toward field electron emitters Honda S, Baek YG, Lee KY, Ikuno T, Kuzuoka T, Ryu JT, Ohkura S, Katayama M, Aoki K, Hirao T, Oura K |
295 - 298 |
Growth control of carbon nanotubes on silicon carbide surfaces using the laser irradiation effect Konishi H, Matsuoka H, Toyama N, Naitoh M, Nishigaki S, Kusunoki M |
299 - 303 |
Fullerene negative ion irradiation toward double-walled carbon nanotubes using low energy magnetized plasma Jeong GH, Okada T, Hirata T, Hatakeyama R, Tohji K |
304 - 307 |
Effect on the growth of carbon nanotubes and optical emission spectroscopy in short-period arc-discharge Nishio M, Akita S, Nakayama Y |
308 - 314 |
Monodisperse carbon nanopearls in a foam-like arrangement: a new carbon nano-compound for cold cathodes Levesque A, Binh VT, Semet V, Guillot D, Fillit RY, Brookes MD, Nguyen TP |
315 - 318 |
Synthesis of highly oriented and dense conical carbon nanofibers by a DC bias-enhanced microwave plasma CVD method Zhong GF, Iwasaki T, Kawarada H, Ohdomari I |
319 - 322 |
Raman study of SWNTs grown by CCVD method on SiC Murakami T, Sako T, Harima H, Kisoda K, Mitikami K, Isshiki T |
323 - 326 |
Selective growth of C-60 layers on GaAs and their crystalline characteristics Nishinaga J, Ogawa M, Horikoshi Y |
327 - 330 |
Fabrication and electron-beam-induced polymerization of C-60 nanoribbon Nakaya M, Nakayama T, Aono M |
331 - 334 |
Fabrication of nanofigures by focused electron beam-induced deposition Ueda K, Yoshimura M |
335 - 337 |
Nano-scale structures of a one-dimensional junction Kim H, Lee J, Song YJ, Choi BY, Kahng SJ, Kuk Y |
338 - 341 |
STM on suspended single wall carbon nanotubes Hassanien A, Tokumoto M, Shimizu T, Tokumoto H |
342 - 345 |
Transport properties of carbon nanotubes encapsulating fullerenes Kondo H, Kino H, Ohno T |
346 - 349 |
Density-functional calculations of self-capacitances of carbon nanostructures Nakaoka N, Watanabe K |
350 - 353 |
Low-temperature then-nal conductance of carbon nanotubes Yamamoto T, Watanabe S, Watanabe K |
354 - 359 |
Field emission and electronic structures of carbon allotropes Watanabe K, Araidai M, Tada K |
360 - 363 |
Structure and electrical resistivity of nano-carbon materials Nakazawa T, Oshida K, Ono N, Ohsawa K, Endo M, Bonnamy S |
364 - 367 |
Current induced light emission from a multiwall carbon nanotube Cai XY, Akita S, Nakayama Y |
368 - 372 |
Near-infrared nonlinear optical properties of single-wall carbon nanotubes embedded in polymer film Rozhin AG, Sakakibara Y, Tokumoto M, Kataura H, Achiba Y |
373 - 378 |
Sum-frequency generation spectroscopy applied to model biosensors systems Dreesen L, Sartenaer Y, Humbert C, Mani AA, Lemaire JJ, Methivier C, Pradier CM, Thiry PA, Peremans A |
379 - 383 |
Adsorption of benzene thiolate on the (111) surface of M (M=Pt, Ag, Cu) and the conductance of M/benzene dithiolate/M molecular junctions: a first-principles study Geng WT, Nara J, Ohno T |
384 - 387 |
Structural study of porphyrin isomers on metal substrates by using STM Terui T, Sekiguchi T, Wakayama Y, Kamikado T, Mashiko S |
388 - 392 |
Cu adsorption on carboxylic acid-terminated self-assembled monolayers: a high-resolution X-ray photoelectron spectroscopy study Whelan CM, Ghijsen J, Pireaux JJ, Maex K |
393 - 397 |
Adsorption-induced conformational changes of porphyrin derivatives and formation of twin superstructures on a copper surface Sekiguchi T, Wakayama Y, Yokoyama S, Kamikado T, Mashiko S |
398 - 402 |
Structural and electrical characterization of pentacene films on SiO2 grown by molecular beam deposition Yanagisawa H, Tamaki T, Nakamura M, Kudo K |
403 - 407 |
Growth process of poly (3-dodecyl thiophene) self-assembled monolayers: FTIR-RAS and gravimetric studies Shimoyama Y |
408 - 411 |
Thermal behavior of a Langmuir-Blodgett film of dioctadecyldimethylammonium-Au(dmit)(2) salt investigated by infrared spectroscopy Morita S, Ikehata A, Miura YF, Sugi M, Ozaki Y |
412 - 415 |
Characterization of light-erasable giant surface potential built up in evaporated Alq(3) thin films Sugi K, Ishii H, Kimura Y, Niwano M, Ito E, Washizu Y, Hayashi N, Ouchi Y, Seki K |
416 - 419 |
Optical alignment control of polyimide molecules containing azobenzene in the backbone structure Sakamoto K, Usami K, Sasaki T, Kanayama T, Ushioda S |
420 - 424 |
Positive and negative patterning of ethanethiol, decanethiol, and hexadecanethiol self-assembled monolayers by using a metastable helium beam Xin J, Mitsunori K, Taku S, Yasushi Y |
425 - 428 |
Restoration of defects generated on the DAST crystal surface by scanning with AFM cantilever tip Nanjo H, Komatsu K, Suzuki TM |
429 - 432 |
Electronic transport through tape-porphyrin molecular bridges Tagami K, Tsukada M |
433 - 436 |
Stochastic mechanical approach to electron transfer in acene molecules Sakamoto S, Tomiya M |
437 - 440 |
Effects of O-2 and H2O on electrical characteristics of pentacene thin film transistors Ye RB, Baba M, Suzuki K, Ohishi Y, Mori K |
441 - 444 |
Gas sensors based on poly-3-hexylthiophene thin-film transistors Fukuda H, Ise M, Kogure T, Takano N |
445 - 451 |
Theoretical study of characteristics of a molecular single-electron transistor Shorokhov VV, Soldatov ES, Snigirev OV |
452 - 455 |
Attachment of DNA to microfabricated arrays with self-assembled monolayer Zhang GJ, Tanii T, Miyake T, Funatsu T, Ohdomari I |
456 - 458 |
An AFM study of the elasticity of DNA molecules Morii T, Mizuno R, Haruta H, Okada T |
459 - 463 |
Synthesis and AFM visualization of DNA nanostructures Mizuno R, Haruta H, Morii T, Okada T, Asakawa T, Hayashi K |
464 - 468 |
Surface plasma wave interactions between semiconductor and electromagnetic space harmonics from microwave to THz range Iizuka K, Bin Hashim AM, Hasegawa H |
469 - 472 |
Real-space observation of electron transport in AlGaAs/GaAs quantum wells using a scanning tunneling microscope Tsuruoka T, Hashimoto H, Ushioda S |
473 - 477 |
Aperiodic nanometer multilayer systems as optical key components for attosecond electron spectroscopy Wonisch A, Westerwalbesloh T, Hachmann W, Kabachnik N, Kleineberg U, Heinzmann U |
478 - 482 |
Formation of periodical and quasi-periodical structures of atoms in light fields Bezverbny AV |
483 - 486 |
Control of optical nonlinearity of metal nanoparticle composites fabricated by negative ion implantation Takeda Y, Lu J, Plaksin OA, Kono K, Amekura H, Kishimoto N |
XVII - XVII |
Proceedings of the 7th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructues, Nara, Japan, November 16-20, 2003 - Preface Oura K |