Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.21, No.6 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (174 articles)

L9 - L11	Synthesis of oxide nanoparticies embedded in polyimide Chung Y, Park HP, Jeon HJ, Yoon CS, Lim SK, Kim YH
L12 - L15	Nanometer-period gratings in hydrogen silsesquioxane fabricated by electron beam lithography Word MJ, Adesida I, Berger PR
2231 - 2261	Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing Kim H
2262 - 2296	Adhesion and stiction: Mechanisms, measurement techniques, and methods for reduction Bhushan B
2297 - 2303	Demonstrations of electronic pattern switching and 10X pattern demagnification in a maskless microion-beam reduction lithography system Ngo VV, Akker B, Leung KN, Noh I, Scott KL, Wilde S
2304 - 2312	Critical dimension control of a plasma etch process by integrating feedforward and feedback run-to-run control El Chemali C, Freudenberg J, Hankinson M, Collison W, Ni T
2313 - 2318	Nanoparticle beam formation and investigation of gold nanostructured films Khabari A, Urban FK, Griffiths P, Petrov I, Kim YW, Bungay C
2319 - 2323	Thermal stability of Pd supported on single crystalline SiO2 thin films Min BK, Santra AK, Goodman DW
2324 - 2328	Photoluminescence quenching mechanisms in GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy Ng TK, Yoon SF, Fan WJ, Loke WK, Wang SZ, Ng ST
2329 - 2333	Wavelet monitoring of plasma etching Kim B, Choi WS, Lim MT
2334 - 2343	Focused ion beam milling of diamond: Effects of H2O on yield, surface morphology and microstructure Adams DP, Vasile MJ, Mayer TM, Hodges VC
2344 - 2347	Electric field effects in single semiconductor quantum dots observed by scanning tunneling luminescence Hakanson U, Hakanson H, Johansson MKJ, Samuelson L, Pistol ME
2348 - 2351	High aspect ratio nano-oxidation of silicon with noncontact atomic force microscopy Clement N, Tonneau D, Gely B, Dallaporta H, Safarov V, Gautier J
2352 - 2359	20 nm polysilicon gate patterning and application in 36 nm complementary metal-oxide-semiconductor devices Xu QX, He Q, Liu M, Zhao YY, Chen BQ, Han ZS, Ye TC, Wu DX
2360 - 2367	Switching characteristics of electrostatically actuated miniaturized micromechanical metallic cantilevers Teh WH, Luo JK, Graham MR, Pavlov A, Smith CG
2368 - 2370	Magnesium oxide gate dielectrics grown on GaN using an electron cyclotron resonance plasma Gila BP, Onstine AH, Kim J, Allums KK, Ren F, Abernathy CR, Pearton SJ
2371 - 2377	Generation mechanism of residual clamping force in a bipolar electrostatic chuck Kanno S, Usui T
2378 - 2381	Annealing temperature dependence of contact resistance and stablity for Ti/Al/Pt/Au ohmic contacts to bulk n-ZnO Ip K, Baik KH, Heo YW, Norton DP, Pearton SJ, LaRoche JR, Luo B, Ren F, Zavada JM
2382 - 2387	Electron field emission of radio frequency magnetron sputtered CNx films annealed at different temperatures Li JJ, Zheng WT, Jin ZS, Wang X, Bian HJ, Gu GR, Zhao YN, Meng SH, He XD, Han JC
2388 - 2392	Si adatom diffusion on Si (100) surface in selective epitaxial growth of Si Lim SH, Song S, Park TS, Yoon E, Lee JH
2393 - 2397	Deep dry etching of GaAs and GaSb using Cl-2/Ar plasma discharges Giehl AR, Gumbel M, Kessler M, Herhammer N, Hoffmann G, Fouckhardt H
2398 - 2403	Positive charge effect in atomic force microscope anodization lithography using self-assembled monolayers of metal phosphate as resists Kim SM, Lee H
2404 - 2410	Study of beveled angle effect on morphology of dual damascene via filling using ionized physical vapor deposition Hwang CC, Chang JG, Weng MH, Lin HC
2411 - 2414	Formation of metastable c-AlN and its effect on the mechanical properties of AlN/(Ti,Al)N nanoscale multilayers Hu XP, Yu XJ, Lao JJ, Li GY, Gu MY
2415 - 2419	Growth of semiconductor gallium nitride nanowires with different catalysts Zhang J, Zhang LD
2420 - 2427	Ion-enhanced chemical etching of HfO2 for integration in metal-oxide-semiconductor field effect transistors Sha L, Puthenkovilakam R, Lin YS, Chang JP
2428 - 2431	Thickness effects on properties of GalnNAs quantum dots grown by molecular-beam epitaxy with nitrogen plasma source Yew KC, Yoon SF, Sun ZZ
2432 - 2440	Etching mechanisms of low-k SIOCH and selectivity to SiCH and SiO2 in fluorocarbon based plasmas Posseme N, Chevolleau T, Joubert O, Vallier L
2441 - 2447	Electrical properties of SiO2 films with embedded nanoparticles formed by SiH4/O-2 chemical vapor deposition Rassel RM, Kim T, Shen Z, Campbell SA, McMurry PH
2448 - 2454	Reduction of ultraviolet-radiation damage in SiO2 using pulse-time-modulated plasma and its application to charge coupled 44 device image sensor processes Okigawa M, Ishikawa Y, Samukawa S
2455 - 2460	Etching of 4H-SIC in a NF3/CH4 inductively coupled plasma Kim B, Lee SY, Lee BT
2461 - 2465	Ab initio calculations of field emission from ultrathin Si(100) films Gohda Y, Watanabe S
2466 - 2470	Evaluation of the cleanliness of the ion-assisted Mo-Si deposition process for extreme ultraviolet lithography Hau-Riege SP, Mirkarimi PB, Walton CC, Sperry V, Larson C
2471 - 2477	Comparative hydrogen sensing performances of Pd- and Pt-InGaP metal-oxide-semiconductor Schottky diodes Tsai YY, Lin KW, Chen HI, Lu CT, Chuang HM, Chen CY, Liu WC
2478 - 2481	Patterning of gold film on muscovite mica by using a helium-metastable atom beam and an octanethiol self-assembled monolayer Ju X, Kurahashi M, Suzuki T, Yamauchi Y
2482 - 2486	Mitigation of residual film stress deformation in multilayer microelectromechanical systems cantilever devices Pulskamp JS, Wickenden A, Polcawich R, Piekarski B, Dubey M, Smith G
2487 - 2491	Comparison of dry etching of AlGaAs and InGaP in a planar inductively coupled BCl3 plasma Baek IK, Lim WT, Lee JW, Jeon MH, Cho GS, Pearton SJ
2492 - 2495	SiC/Si-dots multilayer structures formed by supersonic free jets CH3SiH3 and Si3H8 Ikoma Y, Ohtani R, Matsui N, Motooka T
2496 - 2499	Fabrication of subwavelength surface structures combining self-assembled masking layer with plasma etching techniques Oesterschulze E, Georgiev G, Muller-Wiegand M, Georgieva A, Ludolph K
2500 - 2505	Proton implantation effects on electrical and optical properties of undoped AlGaN with high Al mole fraction Polyakov AY, Smirnov NB, Govorkov AV, Pashkova NV, Pearton SJ, Zavada JM, Wilson RG
2506 - 2511	Effect of bismuth oxide as a buffer layer on metal-lanthanum-substituted bismuth titanate-insulator-semiconductor structures Kang SW, Rhee SW
2512 - 2516	Effects of substrate heating and biasing on nanostructural evolution of nonepitaxially grown TiN nanofilms Li TQ, Noda S, Okada F, Komiyama H
2517 - 2523	Measurement of semi-isolated polysilicon gate structure with the optical critical dimension technique Shivaprasad D, Hu JT, Tabet M, Hoobler R, Mui D, Liu W
2524 - 2529	Effects of temperature and HCl flow on the SiGe growth kinetics in reduced pressure-chemical vapor deposition Hartmann JM, Loup V, Rolland G, Semeria MN
2530 - 2539	Technique for preventing stiction and notching effect on silicon-on-insulator microstructure Li J, Zhang QX, Liu AQ, Goh WL, Ahn J
2540 - 2544	Improved productivity on diamond-like carbon coating optical disk stamper Ueng HY, Guo CT
2545 - 2549	Smooth surface glass etching by deep reactive ion etching with SF6 and Xe gases Li L, Abe T, Esashi M
2550 - 2554	Diffusion barrier properties of very thin TAN with high nitrogen concentration Rossnagel SM, Kim H
2555 - 2557	Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base Chen YW, Hsu WC, Hsu RT, Wu YH, Chen YJ, Lin YS
2558 - 2563	Deep level defects and doping in high Al mole fraction AlGaN Bradley ST, Goss SH, Brillson LJ, Hwang J, Schaff WJ
2564 - 2568	Vertically aligned carbon nanotubes grown by plasma enhanced chemical vapor deposition Sato H, Tagegawa H, Saito Y
2569 - 2575	Investigation of substrate rotation at glancing-incidence on thin-film morphology Dick B, Brett MJ, Smy T
2576 - 2583	Molybdenum/pure aluminum gate bus line defect reduction for high-resolution thin film transistor liquid crystal displays Tsujimura T, Makita A
2584 - 2589	Structure, hardness, and elastic modulus of Pd/Ti nanostructured multilayer films Xu JH, Kamiko M, Sawada H, Zhou YM, Yamamoto R, Yu LH, Kojima I
2590 - 2598	Water-in-carbon dioxide microemulsions for removing post-etch residues from patterned porous low-k dielectrics Zhang XG, Pham JQ, Martinez HJ, Wolf PJ, Green PF, Johnston KP
2599 - 2601	Fabrication of nickel oxide nanostructures by atomic force microscope nano-oxidation and wet etching Hsu JH, Lai HW, Lin HN, Chuang CC, Huang JH
2602 - 2604	n-type doping characteristics of O-implanted GaN Nakano Y, Kachi T, Jimbo T
2605 - 2606	Comments on "Analysis of the I- V characteristics of Al/4H-SiC Schottky diodes" by J. Zhang and W. R. Harrell [J. Vac. Sci. Technol. B 21, 872 (2003)] van Rheenen AD
2607 - 2607	Reply to: "Comments on'Analysis of the I-V characteristics of Al/4H-SiC Schottky diodes'" Zhang J, Harrell WR
2608 - 2611	Fabrication of an infrared antenna-coupled microbolometer linear array using chrome as a mask Gritz MA, Puscasu I, Spencer D, Boreman GD
2623 - 2623	An international journal devoted to Microelectronics and Nanometer Structures - Processing, measurement, and phenomena - Preface Schattenburg ML
2624 - 2631	Imprint lithography for integrated circuit fabrication Resnick DJ, Dauksher WJ, Mancini D, Nordquist KJ, Bailey TC, Johnson S, Stacey N, Ekerdt JG, Willson CG, Sreenivasan SV, Schumaker N
2632 - 2637	Why optical lithography will live forever Brunner TA
2638 - 2644	Electron beam induced conductivity in poly(methylmethacrylate) and SiO2 thin films Bai M, Pease RFW, Meisburger D
2645 - 2649	Complementary exposure of 70 nm SoC devices in electron projection lithography Yamashita H, Amemiya I, Takeuchi K, Masaoka H, Takahashi K, Ikeda A, Kuroki Y, Yamabe M
2650 - 2656	Nanometer-level stitching in raster-scanning electron-beam lithography using spatial-phase locking Hastings JT, Zhang F, Smith HI
2657 - 2662	Wafer heating analysis for electron-beam projection lithography Chang J, Nellis GF, Engelstad RL, Lovell EG, Sogard MR
2663 - 2667	High-performance proximity effect correction for sub-70 nm design rule system on chip devices in 100 kV electron projection lithography Ogino K, Hoshino H, Machida Y, Osawa M, Arimoto H, Takahashi K, Yamashita H
2668 - 2671	Initial results of a 50 kV electron beam writer EBM-4000 for a 90 nm node photomask Murooka K, Hattori K, Iizuka O
2672 - 2679	Dose control for fabrication of grayscale structures using a single step electron-beam lithographic process Hu F, Lee SY
2680 - 2685	Correcting deviations in the shape of projected images in the electron beam block exposure column Yamada A, Yabe T
2686 - 2690	First dynamic exposure results from an electron projection lithography tool Suzuki K, Fujiwara T, Kojima S, Hirayanagi N, Yahiro T, Udagawa J, Shimizu S, Yamamoto H, Suzuki M, Takekoshi H, Fukui S, Hamashima M, Ikeda J, Okino T, Shimizu H, Takahashi S, Yamada A, Umemoto T, Katagiri S, Ohkubo Y, Shimoda T, Hirose K, Tanida T, Watanabe Y, Kaminaga T, Kohama Y, Mori F, Takemoto S, Yoshioka T, Hirose H, Morita K, Hada K, Kawata S, Sato T, Sato Y, Tokunaga M, Okamoto K, Kakizaki Y, Miura T
2691 - 2696	Thermal analysis of projection electron beam lithography using complementary mask exposures Babin S, Kuzmin I, Yamashita H, Yamabe M
2697 - 2700	Printing-based performance analysis of the engineering test stand set-2 optic using a synchrotron exposure station with variable sigma Naulleau P, Goldberg KA, Anderson EH, Bokor J, Harteneck B, Jackson K, Olynick D, Salmassi F, Baker S, Mirkarimi P, Spiller E, Walton C, O'Connell D, Yan PY, Zhang GJ
2701 - 2705	Effect of incident angle of off-axis illumination on pattern printability in extreme ultraviolet lithography Sugawara M, Chiba A, Nishiyama I
2706 - 2710	Preparations for extreme ultraviolet interferometry of the 0.3 numerical aperture Micro Exposure Tool optic Goldberg KA, Naulleau PP, Denham PE, Rekawa SB, Jackson KH, Liddle JA, Harteneck B, Gullikson E, Anderson EH
2711 - 2714	Focused ion beam created periodic structures on tapered optical fibers Hodzic V, Orloff J, Davis C
2715 - 2719	Development of void-free focused ion beam-assisted metal deposition process for subhalf-micrometer high aspect ratio vias Ray V, Antoniou N, Bassom N, Krechmer A, Saxonis A
2720 - 2723	Formation of a few nanometer wide holes in membranes with a dual beam focused ion beam system Schenkel T, Radmilovic V, Stach EA, Park SJ, Persaud A
2724 - 2727	Resolution improvement for a maskless microion beam reduction lithography system Jiang XM, Ji Q, Ji LL, Chang A, Leung KN
2728 - 2731	Focused ion beam-induced fabrication of tungsten structures Ishida M, Fujita J, Ichihashi T, Ochiai Y, Kaito T, Matsui S
2732 - 2736	Development of three-dimensional pattern-generating system for focused-ion-beam chemical-vapor deposition Hoshino T, Watanabe K, Kometani R, Morita T, Kanda K, Haruyama Y, Kaito T, Fujita J, Ishida M, Ochiai Y, Matsui S
2737 - 2741	Free-space-wiring fabrication in nano-space by focused-ion-beam chemical vapor deposition Morita T, Kometani R, Watanabe K, Kanda K, Haruyama Y, Hoshino T, Kondo K, Kaito T, Ichihashi T, Fujita J, Ishida M, Ochiai Y, Tajima T, Matsui S
2742 - 2748	Imprinting polymer film on patterned substrates Tan L, Kong YP, Bao LR, Huang XD, Guo LJ, Pang SW, Yee AF
2749 - 2754	Polymer inking as a micro- and nanopatterning technique Bao LR, Tan L, Huang XD, Kong YP, Guo LJ, Pang SW, Yee AF
2755 - 2759	Fabrication of sawtooth diffraction gratings using nanoimprint lithography Chang CH, Heilmann RK, Fleming RC, Carter J, Murphy E, Bailey TC, Ekerdt JG, Frankel RD, Voisin R
2760 - 2764	Large scale ultraviolet-based nanoimprint lithography Vratzov B, Fuchs A, Lemme M, Henschel W, Kurz H
2765 - 2770	Defect analysis in thermal nanoimprint lithography Hirai Y, Yoshida S, Takagi N
2771 - 2776	Step and flash imprint lithography template characterization, from an etch perspective Dauksher WJ, Mancini DP, Nordquist KJ, Resnick DJ, Standfast DL, Convey D, Wei Y
2777 - 2782	Study on optical intensity distribution in photocuring nanoimprint lithography Hirai Y, Kikuta H, Sanou T
2783 - 2787	Nanoimprint lithography process optimization for the fabrication of high electron mobility transistors Macintyre DS, Chen Y, Gourlay D, Boyd E, Moran D, Cao X, Elgaid K, Stanley CR, Thayne I, Thoms S
2788 - 2793	Simulating fluid flow characteristics during the scanning process for immersion lithography Wei A, Abdo A, Nellis G, Engelstad R, Chang J, Lovell E, Beckman W
2794 - 2799	Extending optics to 50 nm and beyond with immersion lithography Switkes M, Kunz RR, Rothschild M, Sinta RF, Yeung M, Baek SY
2800 - 2805	Linear phase ring illumination monitor McIntyre G, Neureuther AR
2806 - 2809	Correction for local flare effects approximated with double Gaussian profile in ArF lithography Osawa M, Yao T, Aoyama H, Ogino K, Hoshino H, Machida Y, Asai S, Arimoto H
2810 - 2814	The case for diffractive optics in maskless lithography Gil D, Menon R, Smith HI
2815 - 2820	Algebraic model for the printability of nonplanar phase defects Lam M, Neureuther A
2821 - 2825	Extreme expansion of proximity gap by double exposures using enlarged pattern masks for line and space pattern formation in x-ray lithography (evolution of exposure method to symmetric illumination) Toyota E, Washio M, Watanabe H, Sumitani H
2826 - 2829	Photoelectronic analog-to-digital conversion using miniature electron optics: Basic design considerations Pease RF, Ioakeimidi K, Aldana R, Leheny R
2830 - 2833	Effect of oxygen adsorption on the efficiency of magnesium photocathodes Yuan Q, Baum AW, Pease RFW, Pianetta P
2834 - 2838	Distributed axis electron beam technology for maskless lithography and defect inspection Pickard DS, Groves TR, Meisburger WD, Crane T, Pease RF
2839 - 2842	High power 121.6 nm radiation source Yan JX, Gupta MC
2843 - 2847	Laser-produced-plasma light source development for extreme ultraviolet lithography Komori H, Abe T, Suganuma T, Imai Y, Sugimoto Y, Someya H, Hoshino H, Soumagne G, Takabayashi Y, Mizoguchi H, Endo A, Toyoda K, Horiike Y
2848 - 2851	Room-temperature single-electron charging effects in an ambipolar single-walled carbon nanotube grown by chemical vapor deposition Amlani I, Zhang R, Tresek J, Tsui RK
2852 - 2855	Fabrication and characterization of a SiGe double quantum dot structure Qin H, Yasin S, Williams DA
2856 - 2859	Transistor structures for the study of scaling in carbon nanotubes Wind SJ, Radosavljevic M, Appenzeller J, Avouris P
2860 - 2864	Single electron memory devices: Toward background charge insensitive operation Yadavalli KK, Orlov AO, Snider GL, Korotkov AN
2865 - 2868	Method for testing electronic self-assembled monolayers using a flip-chip arrangement Spector SJ, Wynn CM, Switkes M, Kunz RR, Deneault SJ, Rothschild M
2869 - 2873	Influence of oxidation temperature on Si-single electron transistor characteristics Namatsu H, Watanabe Y, Yamazaki K, Yamaguchi T, Nagase M, Ono Y
2874 - 2877	Fabrication of large area subwavelength antireflection structures on Si using trilayer resist nanoimprint lithography and liftoff Yu ZN, Gao H, Wu W, Ge HX, Chou SY
2878 - 2882	Metallic tunable photonic crystal filter for terahertz frequencies Drysdale TD, Mills G, Ferguson SM, Blaikie RJ, Cumming DRS
2883 - 2887	Patterning of circular structure arrays with interference lithography Solak HH, David C
2888 - 2891	Characterization of sidewall, roughness of InP/InGaAsP etched using inductively coupled plasma for low loss optical waveguide applications Bae JW, Zhao W, Jang JH, Adesida I, Lepore A, Kwakernaak M, Abeles JH
2892 - 2896	Evolution of line-edge roughness during fabrication of high-index-contrast microphotonic devices Barwicz T, Smith HI
2897 - 2902	Fabrication of three-dimensional mode converters for silicon-based integrated optics Fritze M, Knecht J, Bozler C, Keast C, Fijol J, Jacobson S, Keating P, LeBlanc J, Fike E, Kessler B, Frish M, Manolatou C
2903 - 2906	3D structuring of multilayer suspended membranes including 2D photonic crystal structures Leclercq JL, Rojo-Romeo P, Seassal C, Mouette J, Letartre X, Viktorovitch P
2907 - 2911	Fabrication methods for a quantum cascade photonic crystal surface emitting laser Tennant DM, Colombelli R, Srinivasan K, Troccoli M, Painter O, Gmachi C, Capasso F, Sergent AM, Sivco DL, Cho AY
2912 - 2917	X-ray and electron-beam lithography of three-dimensional array structures for photonics Romanato F, Cojoc D, Di Fabrizio E, Galli M, Bajoni D
2918 - 2921	Fabrication of high Q square-lattice photonic crystal microcavities Hennessy K, Reese C, Badolato A, Wang CF, Imamoglu A, Petroff PM, Hu E
2922 - 2925	Pattern and probe-based aberration monitors for the human eye Robins G, Neureuther A
2926 - 2930	Development of improved photosensitive polycarbonate systems for the fabrication of microfluidic devices White CE, Henderson CL
2931 - 2936	Chemical recognition based on micromachined silicon cantilever array Abedinov N, Popov C, Yordanov Z, Ivanov T, Gotszalk T, Grabiec P, Kulisch W, Rangelow IW, Filenko D, Shirshov Y
2937 - 2940	Metal nanogap devices fabricated by conventional photolithography and their application to deoxyribose nucleic acid analysis Hashioka S, Saito M, Tamiya E, Matsumura H
2941 - 2945	Fabrication of an integrated nanofluidic chip using interferometric lithography O'Brien MJ, Bisong P, Ista LK, Rabinovich EM, Garcia AL, Sibbett SS, Lopez GP, Brueck SRJ
2946 - 2950	DNA microarrays: An imaging study Kim C, Li M, Lowe A, Venkataramaiah N, Richmond K, Kaysen J, Cerrina F
2951 - 2955	Sublithographic nanofabrication technology for nanocatalysts and DNA chips Choi YK, Lee JS, Zhu J, Somorjai GA, Lee LP, Bokor J
2956 - 2960	Fabrication of high-numerical-aperture phase zone plates with a single lithography exposure and no etching Gil D, Menon R, Smith HI
2961 - 2965	Molecular transfer lithography for pseudomaskless high-throughput aligned nanolithography Schaper CD
2966 - 2969	Nanoelectrode lithography and multiple patterning Yokoo A
2970 - 2974	Precision microcomb design and fabrication for x-ray optics assembly Sun YX, Heilmann RK, Chen CG, Forest CR, Schattenburg ML
2975 - 2979	Fabrication of 12 nm electrically variable shallow junction metal-oxide-semiconductor field effect transistors on silicon on insulator substrates Henschel W, Wahlbrink T, Geogriev YM, Lemme M, Mollenhauer T, Vratzov B, Fuchs A, Kurz H
2980 - 2984	Nanoscale topography control for the fabrication of advanced diffractive optics Liddle JA, Salmassi F, Naulleau PP, Gullikson EM
2985 - 2989	Transient temperature measurements of resist heating using nanothermocouples Chu DC, Wong WK, Goodson KE, Pease RFW
2990 - 2993	Carbon nanopillar laterally grown with electron beam-induced chemical vapor deposition Fujita J, Ishida M, Ichihashi T, Ochiai Y, Kaito T, Matsui S
2994 - 2997	Nonlithographic approach to nanostructure fabrication using a scanned electrospinning source Czaplewski D, Kameoka J, Craighead HG
2998 - 3001	Fabrication of SiC microelectromechanical systems using one-step dry etching Jiang LD, Cheung R, Hassan M, Harris AJ, Burdess JS, Zoman CA, Mehregany M
3002 - 3006	Nanoscopic magnetic field sensor based on extraordinary magnetoresistance Solin SA, Hines DR, Rowe ACH, Tsai JS, Pashkin YA
3007 - 3011	Fabrication of quasi-three-dimensional micro/nanomechanical components using electron beam cross-linked poly (methyl methacrylate) resist Teh WH, Smith CG
3012 - 3016	Fabrication of ultrashort T gates using a PMMA/LOR/UVIII resist stack Chen Y, Macintyre DS, Cao X, Boyd E, Moran D, McLelland H, Holland M, Stanley CR, Thayne I, Thoms S
3017 - 3020	Fabrication of sub-50 nm critical feature for magnetic recording device using electron-beam lithography Yang XM, Eckert A, Mountfield K, Gentile H, Seiler C, Brankovic S, Johns E
3021 - 3026	Damage-free extreme ultraviolet mask with TaBN absorber Shoki T, Kinoshita T, Sakaya N, Hosoya M, Ohkubo R, Usui Y, Kobayshi H, Nagarekawa O
3027 - 3031	Predicting critical dimension uniformity in advanced electron-beam projection lithography masks Cotte EP, Mikkelson AR, Matesanz O, Engelstad RL, Lovell EG, Reu PL
3032 - 3036	Fabrication of a continuous diamondlike carbon membrane mask for electron projection lithography Amemiya I, Yamashita H, Nakatsuka S, Tsukahara M, Nagarekawa O
3037 - 3040	Predicting the thermomechanical distortion of extreme ultraviolet lithography reticles for preproduction and production exposure tools Abdo A, La Fontaine B, Egnelstad R
3041 - 3045	Mask process proximity correction for next-generation mask fabrication Kim SH, Choi SW, Sohn JM, Park JR
3046 - 3051	Dynamic model for predicting in-plane displacement of extreme ultraviolet mask due to chucking Chiba A, Sugawara M, Nishiyama I
3052 - 3056	Effects of chrome pattern characteristics on image placement due to thermomechanical distortion of optical reticles during exposure Abdo A, Capodieci L, Lalovic I, Engelstad R
3057 - 3061	Fabry-Perot structures for attenuated phase-shifting mask application in ArF and F-2 lithography Chen HL, Wu HS, Lee CC, Ko FH, Fan W, Hsieh CI
3062 - 3066	Ultrathin TiO2 amorphous films for high transmittance APSM blanks at 157 and 193 nm wavelength simultaneously Lai FD, Chang CM, Wang LA, Yih TS
3067 - 3071	Testing new chemistries for mask repair with focused ion beam gas assisted etching Stanishevsky A, Edinger K, Orloff J, Melngailis J, Stewart D, Williams A, Clark R
3072 - 3077	Benchmarking stencil reticles for electron projection lithography Wood OR, Trybula WJ, Lercel MJ, Thiel CW, Lawliss MJ, Edinger K, Stanishevsky A, Shimizu S, Kawata S
3078 - 3081	Phase masks working in 157 nm wavelength fabricated by immersion interference photolithography Cheng WC, Wang LA
3082 - 3085	Adaptive membrane masks Zhuang X, Conkerton D, Lal A, Jiang L, Feldman M, O'Reilly T, Smith H
3086 - 3090	Extreme ultraviolet mask fabrication with high inspection contrast TaSiNx absorber stack Wasson JR, Weisbrod EJ, Lu B, Mangat PJS, Dauksher WJ, Resnick DJ, Sohn J, Engelstad R, Pettibone D
3091 - 3096	Extreme ultraviolet lithography mask flatness and electrostatic chucking analysis Mikkelson A, Engelstad R, Lovell E, Blaedel K, Claudet A
3097 - 3101	Nanometer-level repeatable metrology using the nanoruler Konkola PT, Chen CG, Heilmann RK, Joo CM, Montoya JC, Chang CH, Schattenburg ML
3102 - 3107	Micromachined atomic force microscopy sensor with integrated piezoresistive, sensor and thermal bimorph actuator for high-speed tapping-mode atomic force microscopy phase-imaging in higher eigenmodes Pedrak R, Ivanov T, Ivanova K, Gotszalk T, Abedinov N, Rangelow IW, Edinger K, Tomerov E, Schenkel T, Hudek P
3108 - 3111	Demonstration of 20 nm half-pitch spatial resolution with soft x-ray microscopy Chao W, Anderson EH, Denbeaux G, Harteneck B, Pearson AL, Olynick D, Salmassi F, Song C, Attwood D
3112 - 3115	Interferometric-spatial-phase imaging for six-axis mask control Moon EE, Chen L, Everett PN, Mondol MK, Smith HI
3116 - 3119	Advances in nanolithography using molecular rulers Anderson ME, Tan LP, Tanaka H, Mihok M, Lee H, Horn MW, Weiss PS
3120 - 3123	Approach to critical dimension error budget analysis and specification estimation by the Monte Carlo method Lee SW, Yeo GS, Lee JH, Cho HK, Han WS
3124 - 3130	Line edge roughness of sub-100 nm dense and isolated features: Experimental study Ma YS, Tsvid G, Cerrina F
3131 - 3135	Observations and measurements of photomasks using an electron beam with energy of 50 keV or higher Mizuno F, Ohfuji T, Amano T
3136 - 3139	Picometer resolution measurement of the frequency spectrum of a periodic structure written by a MEBES electron beam pattern generator Jourlin Y, Tishchenko AV, Pedri C, Parriaux O, Zanzal A, Unruh J
3140 - 3143	Influence of gate patterning on line edge roughness Leunissen LHA, Jonckheere R, Ronse K, Derksen GB
3144 - 3148	Fabrication of trilayer resist using photocuring-imprint lithography Kim SH, Hiroshima H, Inoue S, Kurashima Y, Komuro M
3149 - 3152	Relation between spatial resolution and reaction mechanism of chemically amplified resists for electron beam lithography Kozawa T, Saeki A, Nakano A, Yoshida Y, Tagawa S
3153 - 3156	Near edge x-ray absorption fine structure measurements of the interface between bottom antireflective coatings and a model deprotected photoresist Jablonski EL, Sambasivan S, Lin EK, Fischer DA, Devadoss C, Puligadda R
3157 - 3161	Electron beam lithography process using radiation sensitive carboxylate metalorganic precursors Jeyakumar A, Henderson CL, Roman P, Suh S
3162 - 3165	Near edge x-ray absorption fine structure measurements of surface segregation in 157 nm photoresist blends Jablonski EL, Prabhu VM, Sambasivan S, Lin EK, Fischer DA, Goldfarb DL, Angelopoulos M, Ito H
3166 - 3171	Stochastic modeling of high energy lithographies Han G, Khan M, Cerrina F
3172 - 3176	Statistical limitations of printing 50 and 80 nm contact holes by EUV lithography Gallatin GM, Houle FA, Cobb JL
3177 - 3180	Monitor and control for development technology Ito S, Hayasaki K
3181 - 3185	High transparency resists for 157 nm lithography Itani T, Ishikawa S, Irie S, Hagiwara T