Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.17, No.6 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (206 articles)

2397 - 2410	Fluorinated amorphous carbon films for low permittivity interlevel dielectrics Theil JA
2411 - 2416	Scanning tunneling microscopy of passivated Au nanocrystals immobilized on Au(111) surface Harrell LE, Bigioni TP, Cullen WG, Whetten RL, First PN
2417 - 2422	Field induced local oxidation of Ti and Ti/Au structures by an atomic force microscope with diamond coated tips Vullers RJM, Ahlskog M, Cannaerts M, Van Haesendonck C
2423 - 2430	In situ electrochemical atomic force microscopy study on Au(100)/Cd interface in sulfuric acid solution Vidu R, Hara S
2431 - 2438	Vapor-deposited gold film formation on highly oriented pyrolitic graphite. A transition from pseudo-two-dimensional branched island growth to continuous film formation Blum B, Salvarezza RC, Arvia AJ
2439 - 2442	Surface superstructure of Arc(+)-bombarded highly oriented pyrolytic graphite during recrystallization An B, Fukuyama S, Yokogawa K, Yoshimura M
2443 - 2446	Minimizing damage during focused-ion-beam induced desorption of hydrogen Fuhrmann H, Candel A, Dobeli M, Muhle R
2447 - 2451	Atomic force microscopy of the topochemical photopolymerization of diolefin crystals Zeng QD, Wang C, Bai CL, Li Y, Yan XJ
2452 - 2456	Scratching on polystyrene thin film without bumps using atomic force microscopy Iwata F, Matsumoto T, Ogawa R, Sasaki A
2457 - 2461	Near-field polarization states and optical images in transmission mode through different surface structures Wang S
2462 - 2466	Nanometric aperture arrays fabricated by wet and dry etching of silicon for near-field optical storage application Lee MB, Atoda N, Tsutsui K, Ohtsu M
2467 - 2470	Ultrahigh density data storage in an organic film with a scanning tunneling microscope Hou SM, Zhao XY, Yang C, Xue ZQ, Yang WJ, Chen HY
2471 - 2475	Fabrication and magneto-transport and SQUID measurements of submicron spin-valve structures Park YD, Temple D, Jung KB, Kumar D, Holloway PH, Pearton SJ
2476 - 2482	Nanoscale elemental imaging of semiconductor materials using focused ion beam secondary ion mass spectrometry Stevie FA, Downey SW, Brown SR, Shofner TL, Decker MA, Dingle T, Christman L
2483 - 2487	Direct current and pulsed operation of contaminated liquid metal ion sources Olson RT, Panitz JA
2488 - 2498	Comparison of metrology methods for quantifying the line edge roughness of patterned features Nelson C, Palmateer SC, Forte AR, Lyszczarz TM
2499 - 2506	Focus drilling and attenuated phase shift mask for subwavelength contact window printing using positive and negative resists Pau S, Trimble LE, Blatchford JW, Watson GP, Frackoviak J, Cirelli R, Nalamasu O
2507 - 2511	Electron beam lithography process for T- and Gamma-shaped gate fabrication using chemically amplified DUV resists and PMMA Chen Y, Macintyre D, Thoms S
2512 - 2518	Low-energy electron-beam effects on poly(methyl methacrylate) resist films Bermudez VM
2519 - 2523	Application of a thin-resist process for KrF imaging to 130 nm device fabrication Azuma T, Chiba K, Kawamura D, Miyoshi S, Ozaki T, Kageyama H
2524 - 2529	Improvement of InGaP/GaAs heterointerface quality by controlling AsH3 flow conditions Fukai YK, Hyuga F, Nittono T, Watanabe K, Sugahara H
2530 - 2535	Influence of growth temperature of InAsP/InP strained multiple quantum wells grown by metalorganic chemical vapor deposition Lee CY, Shiao HP, Wu MC, Chen CW
2536 - 2539	Quantum mechanical funneling through a biased double-cascaded barrier Mohaidat JM, Bitar RN
2540 - 2544	Temperature-graded InAlAs buffers applied on InGaAs/InAlAs/InP high electron mobility transistor heterostructures Arbiol J, Peiro F, Cornet A, Michelakis K, Georgakilas A
2545 - 2552	Depth-resolved electron-excited nanoscale-luminescence spectroscopy studies of defects near GaN/InGaN/GaN quantum wells Levin TM, Jessen GH, Ponce FA, Brillson LJ
2553 - 2558	Correlation between agglomeration of a thin film and reflow filling in a contact hole for sputtered Al films Shingubara S, Kotani H, Sakaue H, Nishiyama F, Takahagi T
2559 - 2564	Low resistance small metal contact for high temperature application Kim JS, Kang WT, Lee WS, Yoo BY, Shin YC, Kim TH, Lee KY, Park YJ, Park JW
2565 - 2569	Microstructure of concentric ring patterns on Ta/Si(100) Sheng HY, Fujita D, Dong ZC, Okamoto H, Ohgi T, Nejoh H
2570 - 2574	Characterization of CoSi2 formation by x-ray photoelectron spectroscopy Zhao J, Jones CM, Poirier DM
2575 - 2580	Tribological behavior of TiC/DLC multilayers prepared on Ti-6Al-4V alloy by plasma-based ion implantation Ji HB, Xia LF, Ma XX, Sun Y, Sun MR
2581 - 2583	Novel process integration for reduction of subquarter-micron contact resistance Ku V
2584 - 2595	Experimental and analytical study of seed layer resistance for copper damascene electroplating Broadbent EK, McInerney EJ, Gochberg LA, Jackson RL
2596 - 2599	Effect of material variations on performance of double-recessed gate power pseudomorphic high electron mobility transistors in monolithic microwave and millimeter wave integrated circuit applications Hussain T, Chu P, Wen CP, Circle M, Gomez A, Midford T, Cisco T
2600 - 2602	Direct epitaxial growth of submicron-patterned SiC structures on Si(001) Yi GC, Eres G, Lowndes DH
2603 - 2609	Finite-element calculations of mechanical stresses induced by water adsorption/desorption in silicate glasses Hoffmann T, LeDuc P, Senez V
2610 - 2621	Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked "N-O-N" gate dielectrics Niimi H, Lucovsky G
2622 - 2625	Buried heterostructure complex-coupled distributed feedback 1.55 mu m lasers fabricated using dry etching processes and quaternary layer overgrowth Soderstrom D, Lourdudoss S, Carlstrom CF, Anand S, Kahn M, Kamp M
2626 - 2629	Control of wet-etching thickness in the vertical cavity surface emitting laser structure by in situ laser reflectometry Cho HK, Lee JY, Lee B, Baek JH, Han WS
2630 - 2637	Interferometry for end point prediction during plasma etching of various structures in complementary metal-oxide-semiconductor device fabrication Layadi N, Molloy SJ, Esry TC, Lill T, Trevor J, Grimbergen MN, Chinn J
2638 - 2643	Abatement of perfluorocarbons with an inductively coupled plasma reactor Liao MY, Wong K, McVittie JP, Saraswat KC
2644 - 2647	Selective plasma etching for contact holes using a fluorine-based chemistry with addition of N-2 Meijer PM, Roelofs MEF, Manders BS
2648 - 2650	Sheath expansion in a drifting, nonuniform plasma Keidar M, Brown IG
2651 - 2652	Anomalous scanning tunneling microscopy images of GaAs(110) surfaces due to tip-induced band bending Aloni S, Haase G
2653 - 2655	Polycarbonate surface modified by argon cluster ion beams Zemek J, Yamada I, Takaoka G, Matsuo J
2656 - 2659	Quantitative surface area evaluation of rugged polycrystalline Si plate for dynamic random access memory capacitor by xenon adsorption Yanazawa H, Futase T, Suzuki I
2660 - 2663	Trimethylamine: Novel source far low damage reactive ion beam etching of InP Carlstrom CF, Anand S, Landgren G
2664 - 2666	Destructive abatement of CF4 and C2F6 via a plasma induced reaction with CaO Delattre JL, Friedman TL, Stacy AM
2667 - 2670	Formation of low resistance Pt ohmic contacts to p-type GaN using two-step surface treatment Jang JS, Park SJ, Seong TY
2671 - 2674	Fabrication of submicrometer regular arrays of pillars and helices Malac M, Egerton RF, Brett MJ, Dick B
2675 - 2678	Effect of An overlayer on Ni contacts to p-type GaN Kim JK, Lee JL, Lee JW, Park YJ, Kim T
2690 - 2691	Papers from the 43rd International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication - Preface Wolfe J
2692 - 2697	Sub-100 nm metrology using interferometrically produced fiducials Schattenburg ML, Chen C, Everett PN, Ferrera J, Konkola P, Smith HI
2698 - 2702	Novel mask-wafer gap measurement scheme with nanometer-level detectivity Moon EE, Everett PN, Meinhold MW, Mondol MK, Smith HI
2703 - 2706	A holographic phase-shifting interferometer technique to measure in-plane distortion Lim MH, Ferrera J, Pipe KP, Smith HI
2707 - 2713	High-throughput, high-spatial-frequency measurement of critical dimension variations using memory circuits as electrical test structures Ouyang X, Deeter TL, Berglund CN, McCord MA, Pease RFW
2714 - 2718	Thin film stress mapping using an integrated sensor Schlax MP, Jachim AF, Engelsad RL, Lovell EG, Liddle JA, Novembre AE
2719 - 2722	Mechanical characterization of electron-beam resist using micromachined structures Que L, Gianchandani YB, Cerrina F
2723 - 2729	Correlation of atomic force microscopy sidewall roughness measurements with scanning electron microscopy line-edge roughness measurements on chemically amplified resists exposed by x-ray lithography Reynolds GW, Taylor JW
2730 - 2733	Control of localized access to circuitry through the backside using focused ion beam technology Antoniou N, Thompson M, Salen J, Casey D, Goruganthu RR, Ring R, Birdsley J, Gilfeather G
2734 - 2739	Fabrication of two-dimensional photonic crystal waveguides for 1.5 mu m in silicon by deep anisotropic dry etching Zijlstra T, van der Drift E, de Dood MJA, Snoeks E, Polman A
2740 - 2744	High-aspect-ratio nanophotonic components fabricated by Cl-2 reactive ion beam etching Zubrzycki WJ, Vawter GA, Wendt JR
2745 - 2749	Cl-2 plasma passivation of etch induced damage in GaAs and InGaAs with an inductively coupled plasma source Berg EW, Pang SW
2750 - 2754	Inductively coupled plasma reactive ion etching of AlxGa1-xN for application in laser facet formation Khan FA, Zhou L, Ping AT, Adesida I
2755 - 2758	Cl-2 reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors Chen CH, Keller S, Haberer ED, Zhang LD, DenBaars SP, Hu EL, Mishra UK, Wu YF
2759 - 2763	High resolution reactive ion etching of GaN and etch-induced effects Cheung R, Reeves RJ, Rong B, Brown SA, Fakkeldij EJM, van der Drift E, Kamp M
2764 - 2767	NANOJET: Nanostructuring via a downstream plasmajet Voigt J, Reinker B, Rangelow IW, Mariotto G, Shvets I, Guethner P, Loschner H
2768 - 2771	Dry etching with gas chopping without rippled sidewalls Volland B, Hudek FS, Heerlein H, Rangelow IW
2772 - 2775	Multilayer hexamethyldisiloxane film as bottom antireflective coating for ArF lithography Wang LA, Chen HL
2776 - 2778	Plasma sources for electrons and ion beams Leung KN
2779 - 2782	Characteristics of ion beams from a Penning source for focused ion beam applications Guharay SK, Sokolovsky E, Orloff J
2783 - 2790	Maskless micro-ion-beam reduction lithography Ngo VV, Barletta W, Gough R, Lee Y, Leung KN, Zahir N, Patterson D
2791 - 2794	Rare earth focused ion beam implantation utilizing Er and Pr liquid alloy ion sources Chao LC, Lee BK, Chi CJ, Cheng J, Chyr I, Steckl AJ
2795 - 2798	Variable axis lens of mixed electrostatic and magnetic fields and its application in electron-beam lithography systems Zhao Y, Khursheed A
2799 - 2802	Development of a projection imaging electron microscope with electrostatic lenses Miyoshi M, Yamazaki Y, Nagai T, Nagahama I, Okumura K
2803 - 2807	Space-charge-induced aberrations Winograd GI, Meisburger WD, Pease RFW
2808 - 2813	Theory of Coulomb scattering in particle beams using Markov's method Groves TR
2814 - 2818	Thin-film gated photocathodes for electron-beam lithography Pei Z, McCarthy J, Berglund CN, Chang TPH, Mankos M, Lee KY, Yu ML
2819 - 2822	Prototype negative electron affinity-based multibeam electron gun for lithography and microscopy Baum A, Arcuni P, Aebi V, Presley S, Elder M
2823 - 2826	Measuring electron-beam landing angle in real time Sturans MA, Hartley JG, Kendall RA
2827 - 2829	Design and implementation of a detector for on-axis electrons for enabling enhanced imaging of topographical structures Munack H, Kogler W, Baumgarten H, Rubekohl C, Adamec P, Degenhardt R, Feuerbaum HP, Winkler D
2830 - 2835	Field size versus column shortness in high throughput electron beam lithography Han L, Pease RFW, Meisburger WD, Winograd GI, McCord MA
2836 - 2839	Lateral pn-junctions as a novel electron defector for microcolumn systems Fritz GS, Fresser HS, Prins FE, Kern DP
2840 - 2846	Projection reduction exposure with variable axis immersion lenses: Next generation lithography Pfeiffer HC, Dhaliwal RS, Golladay SD, Doran SK, Gordon MS, Groves TR, Kendall RA, Lieberman JE, Petric PF, Pinckney DJ, Quickle RJ, Robinson CF, Rockrohr JD, Senesi JJ, Stickel W, Tressler EV, Tanimoto A, Yamaguchi T, Okamoto K, Suzuki K, Okino T, Kawata S, Morita K, Suziki SC, Shimizu H, Kojima S, Varnell G, Novak WT, Stumbo DP, Sogard M
2847 - 2850	PREVAIL: Theory of the proof of concept column electron optics Stickel W, Langner GO
2851 - 2855	PREVAIL: Operation of the electron optics proof-of-concept system Gordon MS, Lieberman JE, Petric PF, Robinson CF, Stickel W
2856 - 2859	High emittance source for the PREVAIL projection lithography system Golladay SD, Kendall RA, Doran SK
2860 - 2863	Proximity effect correction by the GHOST method using a scattering stencil mask Yamashita H, Nomura E, Manako S, Kobinata H, Nakajima K, Nozue H
2864 - 2867	Stencil reticle development for electron beam projection system Kawata S, Katakura N, Takahashi S, Uchikawa K
2868 - 2872	Pattern displacement measurements for Si stencil reticles Uchikawa K, Takahashi S, Katakura N, Oshino T, Kawata S, Yamaguchi T
2873 - 2877	Characteristics for negative and positive tone resists with direct write electron beam and SCALPEL exposure systems Sato M, Ocala LE, Novembre AE, Ohmori K, Ishikawa K, Katsumata K, Nakayama T
2878 - 2882	Mechanical and thermal modeling of the SCALPEL mask Martin CJ, Semke WH, Dicks GA, Engelstad RL, Lovell EG, Liddle JA, Novembre AE
2883 - 2887	Finite element analysis of SCALPEL wafer heating Kim BY, Engelstad RL, Lovell EG, Stanton ST, Liddle JA, Gallatin GM
2888 - 2892	Determination of the possible magnitude of the charging effect in a SCALPEL mask membrane Mkrtchyan MM, Gasparyan AS, Mkhoyan KA, Liddle JA, Novembre AE
2893 - 2896	Charging and discharging of electron beam resist films Bai M, Pease RFW, Tanasa C, McCord MA, Pickard DS, Meisburger D
2897 - 2902	Low energy electron-beam proximity projection lithography: Discovery of a missing link Utsumi T
2903 - 2906	New three dimensional simulator for low energy (similar to 1 keV) electron beam systems Lee Y, Lee W, Chun K, Kim H
2907 - 2911	EB-X3: New electron-beam x-ray mask writer Morosawa T, Saito K, Takeda Y, Kunioka T, Shimizu A, Kato J, Matsuda T, Kuriyama Y, Nakayama Y, Matsui Y
2912 - 2916	Electron optical system for the x-ray mask writer EB-X3 Saito K, Kato J, Shimizu A, Morita H, Matsuda T, Nakayama Y
2917 - 2920	XY stage driven by ultrasonic linear motors for the electron-beam x-ray mask writer EB-X3 Kunioka T, Takeda Y, Matsuda T, Shimazu N, Nakayama Y
2921 - 2926	Influence of the mask-scattered electrons in the cell-projection lithography Kotera M, Yamaguchi K, Okagawa T, Matsuoka K, Kojima Y, Yamabe M
2927 - 2931	Raster shaped beam pattern generation Rishton SA, Varner JK, Veneklasen LH, Boegli V, Sagle AL, Hofmann U, Kao H, Wang W
2932 - 2935	Chrome on glass mask writing at 75 kV with the IBM EL4+electron-beam system Hartley JG, Groves TR
2936 - 2939	Reduction of long range fogging effect in a high acceleration voltage electron beam mask writing system Ogasawara M, Shimomura N, Takamatsu J, Yoshitake S, Ooki K, Nakayamada N, Okabe H, Tojo T, Takigawa T
2940 - 2944	Fundamental performance of state-of-the-art proximity effect correction methods Hofmann U, Crandall R, Johnson L
2945 - 2947	Contrast limitations in electron-beam lithography Crandall R, Hofmann U, Lozes RL
2948 - 2952	New miniaturized tunneling-based gyro for inertial measurement applications Kubena RL, Vickers-Kirby DJ, Joyce RJ, Stratton FP
2953 - 2956	Electric-field modified atomic beam holography Fujita J, Kishimoto T, Mitake S, Shimizu F
2957 - 2960	Fabrication of a new broadband waveguide polarizer with a double-layer 190 nm period metal-gratings using nanoimprint lithography Wang J, Schablitsky S, Yu ZN, Wu W, Chou SY
2961 - 2964	Large scale nanolithography using nanoimprint lithography Heidari B, Maximov I, Sarwe EL, Montelius L
2965 - 2969	Patterning curved surfaces: Template generation by ion beam proximity lithography and relief transfer by step and flash imprint lithography Ruchhoeft P, Colburn M, Choi B, Nounu H, Johnson S, Bailey T, Damle S, Stewart M, Ekerdt J, Sreenivasan SV, Wolfe JC, Willson CG
2970 - 2974	Demonstration of pattern transfer into sub-100 nm polysilicon line/space features patterned with extreme ultraviolet lithography Cardinale GF, Henderson CC, Goldsmith JEM, Mangat PJS, Cobb J, Hector SD
2975 - 2977	Extreme ultraviolet lithography at Carl Zeiss: Manufacturing and metrology of aspheric surfaces with angstrom accuracy Handschuh H, Froschke J, Julich M, Mayer M, Weiser M, Seitz G
2978 - 2981	EUCLIDES: European EUVL program Benschop JPH, van Dijsseldonk AJJ, Kaiser WM, Ockwell DC
2982 - 2986	Extreme ultraviolet interferometric measurements of diffraction-limited optics Goldberg KA, Naulleau P, Bokor J
2987 - 2991	Interferometric at-wavelength flare characterization of extreme ultraviolet optical systems Naulleau P, Goldberg KA, Gullikson EM, Bokor J
2992 - 2997	Image formation in extreme ultraviolet lithography and numerical aperture effects Bollepalli SB, Khan M, Cerrina F
2998 - 3002	Peak and Integrated reflectivity, wavelength and gamma optimization of Mo/Si, and Mo/Be multilayer, multielement optics for extreme ultraviolet lithography Stuik R, Louis E, Yakshin AE, Gorts PC, Maas ELG, Bijkerk F, Schmitz D, Scholze F, Ulm G, Haidl M
3003 - 3008	Technique for rapid at-wavelength inspection of extreme ultraviolet mask blanks Spector SJ, White DL, Tennant DM, Ocola LE, Novembre AE, Peabody ML, Wood OR
3009 - 3013	Actinic detection of sub-100 nm defects on extreme ultraviolet lithography mask blanks Jeong ST, Johnson L, Rekawa S, Walton CC, Prisbrey ST, Tejnil E, Underwood JH, Bokor J
3014 - 3018	Nondestructive picosecond-ultrasonic characterization of Mo/Si extreme ultraviolet multilayer reflection coatings Pu NW, Bokor J, Jeong ST, Zhao RA
3019 - 3023	Extreme ultraviolet mask defect simulation Pistor T, Neureuther A
3024 - 3028	Method for compensation of extreme-ultraviolet multilayer defects Ray-Chaudhuri AK, Cardinale G, Fisher A, Yan PY, Sweeney DW
3029 - 3033	Extreme ultraviolet lithography mask patterning and printability studies with a Ta-based absorber Mangat PJS, Hector SD, Thompson MA, Dauksher WJ, Cobb J, Cummings KD, Mancini DP, Resnick DJ, Cardinale G, Henderson C, Kearney P, Wedowski M
3034 - 3038	System performance modeling of extreme ultraviolet lithographic thermal issues Spence PA, Gianoulakis SE, Moen CD, Kanouff MP, Fisher A, Ray-Chaudhuri AK
3039 - 3042	Characterization of the manufacturability of ultrathin resist Nguyen KB, Lyons C, Schefske J, Pike C, Phan K, King P, Levinson H, Bell S, Okoroanyanwu U
3043 - 3046	Synchrotron light as a source for extreme ultraviolet lithography Ockwell DC, Crosland NCE, Kempson VC
3047 - 3051	Maskless extreme ultraviolet lithography Choksi N, Pickard DS, McCord M, Pease RFW, Shroff Y, Chen YJ, Oldham W, Markle D
3052 - 3057	Nanolithography using extreme ultraviolet lithography interferometry: 19 nm lines and spaces Solak HH, He D, Li W, Cerrina F
3058 - 3062	Gas assisted etching of copper with focused ion beams Edinger K
3063 - 3067	Damage generation and removal in the Ga+ focused ion beam micromachining of GaN for photonic applications Chyr I, Lee B, Chao LC, Steckl AJ
3068 - 3071	Thin oxides on passivated silicon irradiated by focused ion beams Fuhrmann H, Dobeli M, Kotz R, Muhle R, Schnyder B
3072 - 3074	Carrier profile of the Si-doped layer in GaAs fabricated by a low-energy focused ion beam/molecular beam epitaxy combined system Yanagisawa J, Goto T, Hada T, Nakai M, Wakaya F, Yuba Y, Gamo K
3075 - 3079	Combined focused ion beam deposition system and scanning probe microscope for metal nanostructure fabrication and characterization Woodham RG, Ahmed H
3080 - 3084	Surface diagnostics of dry etched III-V semiconductor samples using focused ton beam and secondary ion mass spectrometry Yu SY, Heard P, Cakmak B, Penty RV, White IH
3085 - 3090	Depth control of focused ion-beam milling from a numerical model of the sputter process Vasile MJ, Xie JS, Nassar R
3091 - 3097	Ion projection lithography: International development program Kaesmaier R, Loschner H, Stengl G, Wolfe JC, Ruchhoeft P
3098 - 3106	Experimental results of the stochastic Coulomb interaction in ion projection lithography de Jager PWH, Derksen G, Mertens B, Cekan E, Lammer G, Vonach H, Buschbeck H, Zeininger M, Horner C, Loschner H, Stengl G, Bleeker AJ, Benschop J, Shi F, Volland B, Hudek P, Heerlein H, Rangelow IW, Kaesmaier R
3107 - 3111	Comparison of silicon stencil mask distortion measurements with finite element analysis Ehrmann A, Struck T, Chalupka A, Haugeneder E, Loschner H, Butschke J, Irmscher M, Letzkus F, Springer R, Degen A, Rangelow IW, Shi F, Sossna E, Volland B, Engelstad R, Lovell E, Tejeda R
3112 - 3118	Modeling of edge roughness in ion projection lithography Henke W, Torkler M
3119 - 3121	Minimum ion-beam exposure-dose determination for chemically amplified resist from printed dot matrices Bruenger WH, Torkler M, Weiss M, Loschner H, Leung K, Lee Y, Hudek P, Rangelow IW, Stangl G, Fallmann W
3122 - 3126	Comparative evaluation of electron-beam sensitive single layer top surface imaging and bilayer chemical amplification of resist lines process for stencil mask making Elian K, Irmscher M, Butschke J, Letzkus F, Reuter C, Springer R
3127 - 3131	Directly sputtered stress-compensated carbon protective layer for silicon stencil masks Hudek P, Hrkut P, Drzik M, Kostic I, Belov M, Torres J, Wasson J, Wolfe JC, Degen A, Rangelow IW, Voigt J, Butschke J, Letzkus F, Springer R, Ehrmann A, Kaesmaier R, Kragler K, Mathuni J, Haugeneder E, Loschner H
3132 - 3136	Very high-resolution focused ion beam nanolithography improvement: A new three-dimensional patterning capability Gierak J, Cambril E, Schneider M, David C, Mailly D, Flicstein J, Schmid G
3137 - 3143	MARS: Femtosecond laser mask advanced repair system in manufacturing Haight R, Hayden D, Longo P, Neary T, Wagner A
3144 - 3148	Characteristics of chemical vapor deposition diamond films for x-ray mask substrates Brooks CJ, Powers LA, Acosta RE, Moily D, Faili F, Herb JA
3149 - 3153	Highly accurate cell projection mask for applications to sub-130 nm patterning Kim CK, Hur C, Kim YS, Baik KH, Choi IH
3154 - 3157	Lateral growth of focused ion beam deposited platinum for stencil mask repair DeMarco AJ, Melngailis J
3158 - 3163	Progress toward a 30 nm silicon metal-oxide-semiconductor gate technology Tennant DM, Timp GL, Ocola LE, Green M, Sorsch T, Kornblit A, Klemens F, Kleiman R, Kim Y, Timp W
3164 - 3167	Lithography for sub-60 nm resist nanostructures Ocola LE, Tennant D, Timp G, Novembre A
3168 - 3176	Fabrication of patterned media for high density magnetic storage Ross CA, Smith HI, Savas T, Schattenburg M, Farhoud M, Hwang M, Walsh M, Abraham MC, Ram RJ
3177 - 3181	Patterning of planar magnetic nanostructures by ion irradiation Devolder T, Chappert C, Chen Y, Cambril E, Launois H, Bernas H, Ferre J, Jamet JP
3182 - 3185	Fabrication of 200 nm period nanomagnet arrays using interference lithography and a negative resist Farhoud M, Ferrera J, Lochtefeld AJ, Murphy TE, Schattenburg ML, Carter J, Ross CA, Smith HI
3186 - 3189	Development of chemically assisted dry etching methods for magnetic device structures Jung KB, Cho H, Lee KP, Marburger J, Sharifi F, Singh RK, Kumar D, Dahmen KH, Pearton SJ
3190 - 3196	Perpendicular patterned media in an (Al0.9Ga0.1)(2)O-3/GaAs substrate for magnetic storage Wong J, Scherer A, Barbic M, Schultz S
3197 - 3202	Lithographically induced self-assembly of periodic polymer micropillar arrays Chou SY, Zhuang L
3203 - 3207	Patterning of self-assembled monolayers with lateral dimensions of 0.15 mu m using advanced lithography Yang XM, Peters RD, Kim TK, Nealey PF
3208 - 3211	Fabrication techniques for grating-based optical devices Lim MH, Murphy TE, Ferrera J, Damask JN, Smith HI
3212 - 3216	High aperture diffractive x-ray and extreme ultraviolet optical elements for microscopy and lithography applications Hambach D, Schneider G
3217 - 3221	High perfection chirped grating phase masks by electron-beam definition Rogers C, Goodchild D, Baulcomb R, Butler M, Hoyle P, Kanellopoulos S, Clements S, Pugh B
3222 - 3225	Vertical cavity surface emitting lasers incorporating structured mirrors patterned by electron-beam lithography Berseth CA, Dwir B, Utke I, Pier H, Rudra A, Iakovlev VP, Kapon E, Moser M
3226 - 3230	Independently contacted electron-hole gas heterostructures fabricated with focused ion beam doping during molecular beam epitaxial growth Vijendran S, Sazio PJA, Beere HE, Jones GAC, Ritchie DA, Norman CE
3231 - 3234	Fabrication of tunable antidot structures with submicron airbridges Feng Y, Sachrajda AS, Zawadzki P, Kolind S, Buchanan M, Smet JH, Lapointe J, Marshall PA
3235 - 3238	Fabrication and electron transport in multilayer silicon-insulater-silicon nanopillars Pooley DM, Ahmed H, Lloyd NS
3239 - 3243	Patterning of silicon nanopillars formed with a colloidal gold etch mask Lewis PA, Ahmed H
3244 - 3247	Novel method for silicon quantum wire transistor fabrication Kedzierski J, Bokor J, Anderson E
3248 - 3251	Characteristics of a free-standing superconducting nanobridge with an integrated heater fabricated using a self-aligned technique Lee SB, Hasko DG, Ahmed H
3252 - 3255	Fabrication of high performance microlenses for an integrated capillary channel electrochromatograph with fluorescence detection Wendt JR, Warren ME, Sweatt WC, Bailey CG, Matzke CM, Arnold DW, Allerman AA, Carter TR, Asbill RE, Samora S
3256 - 3261	Scanning probe lithography using a cantilever with integrated transistor for on-chip control of the exposing current Wilder K, Quate CF
3262 - 3266	157 nm: Deepest deep-ultraviolet yet Rothschild M, Bloomstein TM, Curtin JE, Downs DK, Fedynyshyn TH, Hardy DE, Kunz RR, Liberman V, Sedlacek JHC, Uttaro RS, Bates AK, Van Peski C
3267 - 3272	Outlook for 157 nm resist design Kunz RR, Bloomstein TM, Hardy DE, Goodman RB, Downs DK, Curtin JE
3273 - 3279	Materials issues for optical components and photomasks in 157 nm lithography Liberman V, Bloomstein TM, Rothschild M, Sedlacek JHC, Uttaro RS, Bates AK, Van Peski C, Orvek K
3280 - 3284	F-doped and H-2-impregnated synthetic SiO2 glasses for 157 nm optics Mizuguchi M, Skuja L, Hosono H, Ogawa T
3285 - 3290	Technique for optical characterization of exposure tool imaging performance down to 100 nm Grodnensky I, Suwa K, Farrar N, Johnson E, Pan J
3291 - 3295	Node-connection/quantum phase-shifting mask: Path to below 0.3 mu m pitch, proximity effect free, random interconnects and memory patterning Fukuda H
3296 - 3300	Extension of deep-ultraviolet lithography for patterning logic gates using alternating phase shifting masks Kuo CC, Lin CH, Lin HT, Yen A
3301 - 3305	Lithographic projectors with dark-field illumination White DL, Cirelli RA, Spector SJ, Wood OR
3306 - 3309	Liquid immersion deep-ultraviolet interferometric lithography Hoffnagle JA, Hinsberg WD, Sanchez M, Houle FA
3310 - 3313	Nanofabrication with deep-ultraviolet lithography and resolution enhancements Fritze M, Palmateer S, Maki P, Knecht J, Chen CK, Astolfi D, Cann S, Denault S, Krohn K, Wyatt PW
3314 - 3317	Near-field distribution in light-coupling masks for contact lithography Paulus M, Michel B, Martin OJF
3318 - 3321	Determination of high-order lens aberration using phase/amplitude linear algebra Fukuda H, Hayano K, Shirai S
3322 - 3325	High contrast chemically amplified 193 nm resist for gigabit dynamic random access memory generation Itani T, Yoshino H, Yamana M, Takimoto M, Tanabe H
3326 - 3329	Study of bilayer silylation process for 193 nm lithography using chemically amplified resist Satou I, Kuhara K, Endo M, Morimoto H
3330 - 3334	Outgassing of organic vapors from 193 nm photoresists: Impact on atmospheric purity near the lens optics Kunz RR, Downs DK
3335 - 3338	Study of resolution limits due to intrinsic bias in chemically amplified photoresists Postnikov SV, Stewart MD, Tran HV, Nierode MA, Medeiros DR, Cao T, Byers J, Webber SE, Wilson CG
3339 - 3344	Moving boundary transport model for acid diffusion in chemically amplified resists Croffie E, Cheng MS, Neureuther A
3345 - 3350	Study of acid diffusion in a positive tone chemically amplified resist using an on-wafer imaging technique Lu B, Taylor JW, Cerrina F, See CP, Bourdillon AJ
3351 - 3355	Study of acid diffusion in resist near the glass transition temperature Fryer DS, Bollepali S, de Pablo JJ, Nealey PF
3356 - 3361	Measuring acid generation efficiency in chemically amplified resists with all three beams Szmanda CR, Brainard RL, Mackevich JF, Awaji A, Tanaka T, Yamada Y, Bohland J, Tedesco S, Dal'Zotto B, Bruenger W, Torkler M, Fallmann W, Loeschner H, Kaesmaier R, Nealey PM, Pawloski AR
3362 - 3366	Relationship between the slope of the HD curve and the fundamental resist process contrast Brunner TA
3367 - 3370	Simulation of roughness in chemically amplified resists using percolation theory Patsis GP, Glezos N, Raptis I, Valamontes ES
3371 - 3378	Applications of molecular modeling in nanolithography Pawloski AR, Torres JA, Nealey PF, de Pablo JJ
3379 - 3383	Extreme ultraviolet and X-ray resist: Comparison study He D, Solak H, Li W, Cerrina F
3384 - 3389	Comparison of the lithographic properties of positive resists upon exposure to deep- and extreme-ultraviolet radiation Brainard RL, Henderson C, Cobb J, Rao V, Mackevich JF, Okoroanyanwu U, Gunn S, Chambers J, Connolly S
3390 - 3393	Comparison of sensitivity and exposure latitude for polymethylmethacrylate, UVIII, and calixarene using conventional dip and ultrasonically assisted development Yasin S, Hasko DG, Ahmed H
3394 - 3397	Application of 4-methyl-1-acetoxycalix[6]arene resist to complementary metal-oxide-semiconductor gate processing Rooks MJ, Aviram A
3398 - 3401	Novel antireflective layer using polysilane for deep ultraviolet lithography Sato Y, Shiobara E, Miyoshi S, Asano M, Matsuyama H, Onishi Y, Nakano Y, Hayase S
3402 - 3406	Progress in x-ray mask technology at NTT Oda M, Shimada M, Tsuchizawa T, Uchiyama S, Okada I, Yoshihara H
3407 - 3410	Thermal compensation of x-ray mask distortions Feldman M
3411 - 3414	Magnification correction by changing wafer temperature in proximity x-ray lithography Aoyama H, Mitsui S, Taguchi T, Tanaka Y, Matsui Y, Fukuda M, Suzuki M, Haga T, Morita H
3415 - 3419	Critical-dimension control for 100 nm patterns in x-ray lithography Tanaka Y, Iwamoto T, Fujii K, Kikuchi Y, Matsui Y, Fukuda M, Morita H
3420 - 3425	Direct measurement of x-ray mask sidewall roughness and its contribution to the overall sidewall roughness of chemically amplified resist features Reynolds GW, Taylor JW, Brooks CJ
3426 - 3432	Extension of x-ray lithography to 50 nm with a harder spectrum Khan M, Han G, Bollepalli SB, Cerrina F, Maldonado J
3433 - 3438	Pattern resolution of an x-ray beamline with a wide exposure field Khan M, Cerrina F, Toyota E
3439 - 3443	X-ray multilevel zone plate fabrication by means of electron-beam lithography: Toward high-efficiency performances Di Fabrizio E, Gentili M
3444 - 3448	Fabrication of three-dimensional microstructures by high resolution x-ray lithography Cuisin C, Chen Y, Decanini D, Chelnokov A, Carcenac F, Madouri A, Lourtioz JM, Launois H
3449 - 3452	Maskless, parallel patterning with zone-plate array lithography Carter DJD, Gil D, Menon R, Mondol MK, Smith HI, Anderson EH