Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.14, No.6 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (194 articles)

3413 - 3419	Fabrication of Gold Nanostructures on a Vicinal Si(111) 7X7 Surface Using Ultrahigh-Vacuum Scanning Tunneling Microscope and a Gold-Coated Tungsten Tip Fujita D, Jiang QD, Nejoh H
3420 - 3424	Characterization of Large-Area Arrays of Nanoscale Si Tips Fabricated Using Thermal-Oxidation and Wet Etching of Si Pillars Umbach CC, Weselak BW, Blakely JM, Shen Q
3425 - 3430	Silicon Structures for in-Situ Characterization of Atomic-Force Microscope Probe Geometry Jarausch KF, Stark TJ, Russell PE
3431 - 3435	Correlation of Raman and Optical Studies with Atomic-Force Microscopy in Porous Silicon Filios AA, Hefner SS, Tsu R
3436 - 3444	Use of Multiple Analytical Techniques to Confirm Improved Optical Modeling of SnO2-F Films by Atomic-Force Microscopy and Spectroscopic Ellipsometry Athey PR, Urban FK, Holloway PH
3445 - 3451	Optimal Filtering of Scanning Probe Microscope Images for Wear Analysis of Smooth Surfaces Schouterden K, Lairson BM, Azarian MH
3452 - 3454	Atomic Structures of Ag2Te Studied by Scanning-Tunneling-Microscopy Ohto M, Tanaka K
3455 - 3459	Emission Measurements and Simulation of Silicon Field-Emitter Arrays with Linear Planar Lenses Tang CM, Swyden TA, Thomason KA, Yadon LN, Temple D, Ball CA, Palmer WD, Mancusi JE, Vellenga D, Mcguire GE
3460 - 3464	Comparative-Study of the Elastic Properties of Silicate Glass-Films Grown by Plasma-Enhanced Chemical-Vapor Carlotti G, Doucet L, Dupeux M
3465 - 3469	Ammonia Nitridation of Thermal Polyoxide to Eliminate Epitaxial Ambient Induced Dielectric Pinhole Formation Fultz WW, Neudeck GW
3470 - 3472	Selective Dry-Etching of Oxide-Films for Spacer Applications in a High-Density Plasma Allen LR, Yuwang V, Sato M
3473 - 3482	Polysilicon Gate Etching in High-Density Plasmas .4. Comparison of Photoresist and Oxide Masked Polysilicon Etching-Thickness Determination of Gate Oxide Layers Using X-Ray Photoelectron-Spectroscopy Bell FH, Joubert O
3483 - 3488	Electron-Beam/Ultraviolet Hybrid Exposure Combined with Novel Bilayer Resist System for a 0.15-Mu-M T-Shaped Gate Fabrication Process Takano H, Nakano H, Minami H, Hosogi K, Yoshida N, Sato K, Hirose Y, Tsubouchi N
3489 - 3491	Ag2Te/As2S3 - A High-Contrast, Top-Surface Imaging Resist for 193 nm Lithography Lavine JM, Buliszak MJ
3492 - 3496	Neutral Shadowing in Circular Cylindrical Trench Holes Abrahamshrauner B, Chen WJ
3497 - 3501	Process Technology for Monolithic High-Speed Schottky/Resonant Tunneling Diode Logic Integrated-Circuits Lei PM, Subramaniam S, Bernstein GH, Williamson W, Gilbert BK, Chow DH
3502 - 3508	Effect of the Ti/Tin Bilayer Barrier and Its Surface-Treatment on the Reliability of a Ti/Tin/Alsicu/Tin Contact Metallization Ouellet L, Tremblay Y, Gagnon G, Caron M, Currie JF, Gujrathi SC, Biberger M
3509 - 3513	High-Stability Heterojunction Bipolar-Transistors with Carbon-Doped Base Grown by Atomic Layer Chemical Beam Epitaxy Driad R, Alexandre F, Juhel M, Launay P
3514 - 3519	Electrical and Microstructure Analysis of Ohmic Contacts to P-Type and N-Type GaSb, Grown by Molecular-Beam Epitaxy Vogt A, Hartnagel HL, Miehe G, Fuess H, Schmitz J
3520 - 3522	Thermal-Stability of W, WSix, and Ti/Al Ohmic Contacts to Ingan, Inn, and Inaln Vartuli CB, Pearton SJ, Abernathy CR, Mackenzie JD, Shul RJ, Zolper JC, Lovejoy ML, Baca AG, Hagerottcrawford M
3523 - 3531	High-Temperature Surface Degradation of III-V Nitrides Vartuli CB, Pearton SJ, Abernathy CR, Mackenzie JD, Lambers ES, Zolper JC
3532 - 3542	Thermal-Stability and Desorption of Group-III Nitrides Prepared by Metal-Organic Chemical-Vapor-Deposition Ambacher O, Brandt MS, Dimitrov R, Metzger T, Stutzmann M, Fischer RA, Miehr A, Bergmaier A, Dollinger G
3543 - 3549	Thermally Stable InGaP/GaAs Schottky Contacts Using Low N Content Double-Layer Wsin Shiojima K, Nishimura K, Tokumitsu M, Nittono T, Sugawara H, Hyuga F
3550 - 3554	Improved Cathodoluminescence Properties of GaAs/Al0.3Ga0.7As Tilted T-Shaped Quantum Wires Fabricated on (111)B Facet by Glancing-Angle Molecular-Beam Epitaxy Tomita N, Tanaka M, Saeki T, Shimomura S, Hiyamizu S, Fujita K, Watanabe T, Higuchi T, Sano N, Adachi A
3555 - 3558	Quasi-Periodic Microfacets on the Surface of AlGaAs/GaAs Quantum-Well Structures Grown by Molecular-Beam Epitaxy on (311)A High-Index Substrates Freire SL, Cury LA, Matinaga FM, Valadares EC, Moreira MV, Deoliveira AG, Alves AR, Vilela JM, Andrade MS, Lima TM, Sluss JA
3559 - 3562	Layer-by-Layer Removal of GaAs(110) by Bromine Cha CY, Weaver JH
3563 - 3574	Treatment of InP Surfaces in Radio-Frequency H-2 and H-2/CH4/Ar Plasmas - In-Situ Compositional Analysis, Etch Rates, and Surface-Roughness Parmeter JE, Shul RJ, Howard AJ, Miller PA
3575 - 3581	Annihilation of Monolayer Holes on Molecular-Beam Epitaxy-Grown GaAs Surface During Annealing as Shown by in-Situ Scanning Electron-Microscopy Inoue N, Morimoto K, Araki T, Ito T, Homma Y, Osaka J
3582 - 3587	Antimony Doped GaAs - A Model of Dominant Current Transport Mechanism Valcheva E, Paskova T, Yakimova R
3588 - 3592	Misfit Dislocations in Strained InxGa(1-X)as Heterostructure on Patterned GaAs(001) Substrate Zeng W, Jiang SS, Ferrari C, Gennari S, Salviati G, Jiang JH
3593 - 3595	Surface Roughness-Induced Artifacts in Secondary-Ion Mass-Spectrometry Depth Profiling and a Simple Technique to Smooth the Surface Herner SB, Gila BP, Jones KS, Gossmann HJ, Poate JM, Luftman HS
3596 - 3598	Rh/N-GaAs Contacts with and Without Sulfur Passivation Eftekhari G
3599 - 3602	Hydrogen-Induced Reconstruction of the Gap(001) Surface Studied by Scanning-Tunneling-Microscopy Watanabe A, Shimaya H, Naitoh M, Nishigaki S
3603 - 3603	Selective Wet Etching of Lattice-Matched InGaAs/InAlAs on InP and Metamorphic InGaAs/InAlAs on GaAs Using Succinic Acid Hydrogen-Peroxide Solution (Vol 14, Pg 3400, 1996) Fourre H, Diette F, Cappy A
3604 - 3604	Surface-Reaction of Trimethylgallium on GaAs (Vol 14, Pg 136, 1996) Nishizawa J, Sakuraba H, Kurabayashi T
3605 - 3605	Deep-Etch Silicon mm-Wave-Guide Structure for the Relativistic Acceleration of Electrons (Vol 14, Pg 2524, 1996) Willke TL, Feinerman AD
3619 - 3619	Papers from the 40th International-Conference on Electron, Ion, and Photon-Beam Technology and Nanofabrication 28-31 May 1996, Atlanta Marriott Marquis, Atlanta, Georgia - Preface Pang SW
3620 - 3624	Persistence Pays Off - Sir Oatley,Charles and the Scanning Electron-Microscope Everhart TE
3625 - 3631	Application of Scanning Probe Methods for Electronic and Magnetic Device Fabrication, Characterization, and Testing Born A, Hahn C, Lohndorf M, Wadas A, Witt C, Wiesendanger R
3632 - 3636	Low-Energy Ion Damage in Semiconductors - A Progress Report Hu EL, Chen CH, Green DL
3637 - 3640	Etching Processes for Fabrication of GaN/Ingan/AlN Microdisk Laser Structures Lee JW, Vartuli CB, Abernathy CR, Mackenzie JD, Mileham JR, Pearton SJ, Shul RJ, Zolper JC, Hagerottcrawford M, Zavada JM, Wilson RG, Schwartz RN
3641 - 3645	Quantum Dots Fabricated in InP/InGaAs by Free Cl-2 Gas Etching and Metalorganic Chemical-Vapor-Deposition Regrowth Panepucci R, Reuter E, Fay P, Youtsey C, Kluender J, Caneau C, Coleman JJ, Bishop SG, Adesida I
3646 - 3649	Reduced Nonradiative Recombination in Etched/Regrown AlGaAs/GaAs Structures Fabricated by in-Situ Kohmoto S, Nambu Y, Asaka K, Ishikawa T
3650 - 3653	Etch-Mask of Pyrolytic-Photoresist Thin-Film for Self-Aligned Fabrication of Smooth and Deep Faceted 3-Dimensional Microstructures Porkolab GA, Hsu SH, Hryniewicz JV, Lin WH, Chen YJ, Agarwala S, Johnson FG, King O, Dagenais M, Stone DR
3654 - 3657	Photoluminescence Blueshift Induced by Reactive Ion Etching of Strained Cdznse/ZnSe Quantum-Well Structures Sparing LM, Wang PD, Xin SH, Short SW, Shi SS, Furdyna JK, Merz JL, Snider GL
3658 - 3662	Dry-Etching Damage in III-V Semiconductors Murad S, Rahman M, Johnson N, Thoms S, Beaumont SP, Wilkinson CD
3663 - 3667	Effects of Etch-Induced Damage on the Electrical Characteristics of Inplane Gated Quantum-Wire Transistors Ko KK, Berg EW, Pang SW
3668 - 3673	Effects of O-2 Addition to Sicl4/Sif4 and the Thickness of the Capping Layer on Gate Recess Etching of GaAs-Pseudomorphic High-Electron-Mobility Transistors Murad SK, Cameron NI, Beaumont SP, Wilkinson CD
3674 - 3678	Investigation of Improved Regrown Material on InP Surfaces Etched with Methane/Hydrogen/Argon Yu DG, Chen CH, Keller BP, Holmes AL, Hu EL, Denbaars SP
3679 - 3683	Reactive Ion Etch-Induced Effects on 0.2-Mu-M T-Gate In0.52Al0.48As/In0.53Ga0.47As/InP High-Electron-Mobility Transistors Cheung R, Patrick W, Pfund I, Hahner G
3684 - 3687	Photoluminescence Studies on Radiation-Enhanced Diffusion of Dry-Etch Damage in GaAs and InP Materials Chen CH, Yu DG, Hu EL, Petroff PM
3688 - 3691	Suppression of Electron Shading Effect by a Counter Radio-Frequency Bias in Plasma-Etching Kamata T, Arimoto H
3692 - 3696	Fabrication of Micromechanical Switches for Routing Radio-Frequency Signals Randall JN, Goldsmith C, Denniston D, Lin TH
3697 - 3701	Sharpening Si Field Emitter Tips by Dry-Etching and Low-Temperature Plasma Oxidation Rakhshandehroo MR, Pang SW
3702 - 3705	Realization of Atomic Layer Etching of Silicon Athavale SD, Economou DJ
3706 - 3708	Precision Optical Aspheres for Extreme-Ultraviolet Lithography Kania DR, Gaines DP, Sweeney DS, Sommargren GE, Lafontaine B, Vernon SP, Tichenor DA, Bjorkholm JE, Zernike F, Kestner RN
3709 - 3713	Effects of Compaction on 193 nm Lithographic System Performance Schenker R, Oldham W
3714 - 3718	Merit Functions for Lithographic Lens Design Progler CJ, Byrne DM
3719 - 3723	Attenuated Phase-Shift Mask Materials for 248 and 193 nm Lithography Smith BW, Butt S, Alam Z, Kurinec S, Lane RL
3724 - 3729	Propagation Effects of Partial Coherence in Optical Lithography Socha RJ, Neureuther AR
3730 - 3733	General Aspheric Refractive Microoptics Fabricated by Optical Lithography Using a High-Energy Beam Sensitive Glass Gray-Level Mask Daschner W, Long P, Stein R, Wu C, Lee SH
3734 - 3737	Simulation of Light-Propagation in Optical Linear and Nonlinear Resist Layers by Finite-Difference Beam-Propagation and Other Methods Erdmann A, Henke W
3738 - 3741	Micro-Objective Lens with Compact Secondary-Electron Detector for Miniature Low-Voltage Electron-Beam Systems Liu W, Ambe T, Pease RF
3742 - 3746	Triangular-Variable-Shaped Beams Using the Cell Projection Method Someda Y, Shoda Y, Saitou N
3747 - 3752	Combined Calculation of Lens Aberrations, Space-Charge Aberrations, and Statistical Coulomb Effects in Charged-Particle Optical-Columns Jiang XR, Barth JE, Kruit P
3753 - 3758	Optical Design of a Combined Ion and Electron-Beam System for Nanotechnology Dejager PW, Kruit P
3759 - 3763	Fundamental Limits to Imaging Resolution for Focused Ion-Beams Orloff J, Swanson LW, Utlaut M
3764 - 3769	High Emittance Electron-Gun for Projection Lithography Devore W, Berger SD
3770 - 3773	Ultralow Voltage Imaging Hordon LS, Monahan KM
3774 - 3781	Electron-Beam Microcolumns for Lithography and Related Applications Chang TH, Thomson MG, Kratschmer E, Kim HS, Yu ML, Lee KY, Rishton SA, Hussey BW, Zolgharnain S
3782 - 3786	Semiconductor on Glass Photocathodes as High-Performance Sources for Parallel Electron-Beam Lithography Schneider JE, Baum AW, Winograd GI, Pease RF, Mccord M, Spicer WE, Costello KA, Aebi VW
3787 - 3791	Titanium Nitride Coated Tungsten Cold Field-Emission Sources Lo WK, Parthasarathy G, Lo CW, Tanenbaum DM, Craighead HG, Isaacson MS
3792 - 3796	Experimental Evaluation of a 20X20 mm Footprint Microcolumn Kratschmer E, Kim HS, Thomson MG, Lee KY, Rishton SA, Yu ML, Zolgharnain S, Hussey BW, Chang TH
3797 - 3801	Energy-Distributions of Field Emitted Electrons from Carbide Tips and Tungsten Tips with Diamond-Like Carbon Coatings Yu ML, Kim HS, Hussey BW, Chang TH, Mackie WA
3802 - 3807	The Electrostatic Moving Objective Lens and Optimized Deflection Systems for Microcolumns Thomson MG
3808 - 3812	Initial Images with a Partially Micromachined Scanning Electron-Microscope Crewe DA, Ruffin MM, Feinerman AD
3813 - 3820	Multielectron Beam Blanking Aperture Array System Synapse-2000 Yasuda H, Arai S, Kai J, Ooae Y, Abe T, Maruyama S, Kiuchi T
3821 - 3824	Characterization and Application of a Low-Profile Metal-Semiconductor-Metal Detector for Low-Energy Backscattered Electrons Meier GD, Fresser HS, Prins FE, Kern DP
3825 - 3828	Preliminary-Results from a Prototype Projection Electron-Beam Stepper-Scattering with Angular Limitation Projection Electron-Beam Lithography Proof-of-Concept System Harriott LR, Berger SD, Biddick C, Blakey MI, Bowler SW, Brady K, Camarda RM, Connelly WF, Crorken A, Custy J, Dimarco R, Farrow RC, Felker JA, Fetter L, Freeman R, Hopkins L, Huggins HA, Knurek CS, Kraus JS, Liddle JA, Mkrtychan M, Novembre AE, Peabody ML, Tarascon RG, Wade HH, Waskiewicz WK, Watson GP, Werder KS, Windt D
3829 - 3833	High-Resolution Electron-Beam Lithography Using Zep-520 and Krs Resists at Low-Voltage Tanenbaum DM, Lo CW, Isaacson M, Craighead HG, Rooks MJ, Lee KY, Huang WS, Chang TH
3834 - 3838	Electron-Beam-Induced Damage of Silicon-Germanium Paul DJ, Ryan JM, Pepper M, Broers AN, Whall TE, Fernandez JM, Joyce BA
3839 - 3844	Theory of Beam-Induced Substrate Heating Groves TR
3845 - 3849	Electron-Scattering by Electron-Beam Mask with Tapered Aperture in Cell Projection Lithography Yamashita H, Ema T, Itoh K, Nozue H, Nomura E
3850 - 3854	Modified Mask Methods for Pattern Accuracy Enhancement in Electron-Beam Lithography Sohda Y, Someda Y, Nakayama Y, Saitou N
3855 - 3859	One-Step Electron-Beam Lithography for Multipurpose, Diffractive Optical-Elements with 200 nm Resolution Difabrizio E, Grella L, Baciocchi M, Gentili M, Peschiaroli D, Mastrogiacomo L, Maggiora R
3860 - 3863	3-Dimensional Electron-Beam Lithography Using an All-Dry Resist Process Babin S, Koops HW
3864 - 3869	Modeling of Electron Elastic and Inelastic-Scattering Marrian CR, Perkins FK, Park D, Dobisz EA, Peckerar MC, Rhee KW, Bass R
3870 - 3873	Studies on Correction Accuracy of Proximity Effect for the Pattern Area Density Method in Electron-Beam Direct Writing Kasuga T, Konishi M, Oda T, Moriya S
3874 - 3879	Region-Wise Proximity Effect Correction for Heterogeneous Substrates in Electron-Beam Lithography - Shape Modification Lee SY, Liu B
3880 - 3886	Feature Contrast in Dose-Equalization Schemes Used for Electron-Beam Proximity Control Peckerar M, Marrian C, Perkins FK
3887 - 3891	Electron-Beam-Induced Deposition of Copper Compound with Low-Resistivity Ochiai Y, Fujita J, Matsui S
3892 - 3895	Divot Defect Repair on a Deep-Ultraviolet Sinx Half-Tone Mask Nakamura H, Komano H, Sugihara K, Koike T, Higashikawa I
3896 - 3899	A Proximity Ion-Beam Lithography Process for High-Density Nanostructures Wolfe JC, Pendharkar SV, Ruchhoeft P, Sen S, Morgan MD, Horne WE, Tiberio RC, Randall JN
3900 - 3902	Stencil Mask Temperature-Measurement and Control During Ion Irradiation Riordon J, Didenko L, Melngailis J
3903 - 3906	Application of Optical Filters Fabricated by Masked Ion-Beam Lithography Morgan MD, Horne WE, Sundaram V, Wolfe JC, Pendharkar SV, Tiberio R
3907 - 3910	High-Brightness Ion-Source for Ion Projection Lithography Guharay SK, Wang W, Dudnikov VG, Reiser M, Orloff J, Melngailis J
3911 - 3915	Energy Spread in Liquid-Metal Ion Sources at Low Currents Beckman JC, Chang TH, Wagner A, Pease RF
3916 - 3919	Sub-100 nm Focused Ion-Beam Lithography Using Ladder Silicone Spin-on Glass Suzuki K, Yamashita M, Kawakami N, Yoshikawa A, Nakaue A
3920 - 3923	Tetramethoxysilane as a Precursor for Focused Ion-Beam and Electron-Beam Assisted Insulator (SiOx) Deposition Lipp S, Frey L, Lehrer C, Frank B, Demm E, Pauthner S, Ryssel H
3924 - 3927	Hpr-506 Photoresist Used as a Positive Tone Ion Resist Bruenger WH, Buchmann LM, Torkler M, Sinkwitz S
3928 - 3932	Development of Focused Ion-Beam Machining Techniques for Permalloy Structures Thaus DM, Stark TJ, Griffis DP, Russell PE
3933 - 3937	Use of Very-Low Energy in-Situ Focused Ion-Beams for 3-Dimensional Dopant Patterning During Molecular-Beam Epitaxial-Growth Sazio PJ, Thompson JH, Jones GA, Linfield EH, Ritchie DA, Houlton M, Smith GW
3938 - 3941	Fabrication of Laterally Selected Si Doped Layer in GaAs Using a Low-Energy Focused Ion-Beam Molecular-Beam Epitaxy Combined System Yanagisawa J, Nakayama H, Wakaya F, Yuba Y, Gamo K
3942 - 3946	Focused Ion-Beam Biased Repair of Conventional and Phase-Shift Masks Cui Z, Prewett PD, Watson JG
3947 - 3950	Development of Ion Sources for Ion Projection Lithography Lee Y, Gough RA, Kunkel WB, Leung KN, Perkins LT, Pickard DS, Sun L, Vujic J, Williams MD
3951 - 3954	Nanofabrication Technology by Gas Cluster Ion-Beams Matsuo J, Toyoda N, Yamada I
3955 - 3959	Atmospheric Metrology Using the Air Turbulence Compensated Interferometer Henshaw PD, Degloria DP
3960 - 3963	Absolute Distance Measurement Interferometry for Alignment Systems for Advanced Lithography Tools Dunn TJ, Lee TM, Jain K
3964 - 3968	Initial Results from an Extreme-Ultraviolet Interferometer Operating with a Compact Laser-Plasma Source Raychaudhuri AK, Krenz KD, Nissen RP, Haney SJ, Fields CH, Sweatt WC, Macdowell AA
3969 - 3973	Simultaneous Measurement of Gap and Superposition in a Precision Aligner for X-Ray Nanolithography Moon EE, Everett PN, Rhee K, Smith HI
3974 - 3979	Latent Image-Formation - Nanoscale Topography and Calorimetric Measurements in Chemically Amplified Resists Ocola LE, Fryer D, Nealey P, Depablo J, Cerrina F, Kammer S
3980 - 3984	Minimizing Alignment Error Induced by Asymmetric Resist Coating Chen X, Pease RF
3985 - 3989	Patterning Accuracy Estimation During Stage Acceleration in the Electron-Beam Direct Writing System Ex-8D Hattori K, Magoshi S, Ando A, Satoh S, Sunaoshi H, Suenaga M, Housai H, Hashimoto S, Wada H, Sugihara K
3990 - 3995	Characterization of Resist Profiles Using Water Enhanced Focused Ion-Beam Micromachining Stark TJ, Griffis DP, Russell PE
3996 - 3999	Investigations on the Topology of Structures Milled and Etched by Focused Ion-Beams Lipp S, Frey L, Lehrer C, Frank B, Demm E, Ryssel H
4000 - 4003	Direct Aerial Image Measurements to Evaluate the Performance of an Extreme-Ultraviolet Projection Lithography System Fields CH, Oldham WG, Raychaudhuri AK, Krenz KD, Stulen RH
4004 - 4008	Atomic-Force Microscopy for Cross-Section Inspection and Metrology Wilder K, Quate CF, Singh B, Alvis R, Arnold WH
4009 - 4013	Analysis of Distortion in Interferometric Lithography Ferrera J, Schattenburg ML, Smith HI
4014 - 4019	Effects of Electron-Beam Parameters on Critical-Dimension Measurements Mizuno F, Satoh O
4020 - 4023	0.1-Mu-M Complementary Metal-Oxide-Semiconductors and Beyond Toriumi A
4024 - 4028	Fabrication of Back-Gated Complementary Metal-Oxide-Semiconductor Devices Using Mixed and Matched Optical and X-Ray Lithographies Yang IY, Antoniadis DA, Smith HI
4029 - 4033	A New High-Performance Surface-Micromachined Tunneling Accelerometer Fabricated Using Nanolithography Kubena RL, Atkinson GM, Robinson WP, Stratton FP
4034 - 4037	Metal-Based Single-Electron Transistors Operating at Several Kelvin Altmeyer S, Hamidi A, Spangenberg B, Kurz H
4038 - 4041	Fabrication of Lateral Resonant-Tunneling Devices with Heterostructure Barriers Randall JN, Broekaert TP, Smith BD, Beamlll EA, Seabaugh AC, Jovanovic D
4042 - 4045	A Triangle-Shaped Nanoscale Metal-Oxide-Semiconductor Device Gondermann J, Rower T, Hadam B, Koster T, Stein J, Spangenberg B, Roskos H, Kurz H
4046 - 4050	Charge Detector Realization for AlGaAs/GaAs Quantum-Dot Cellular-Automata Bazan G, Orlov AO, Snider GL, Bernstein GH
4051 - 4054	A Heavy-Ion Implanted Pocket 0.10-Mu-M N-Type Metal-Oxide-Semiconductor Field-Effect Transistor with Hybrid Lithography (Electron-Beam/Deep Ultraviolet) and Specific Gate Passivation Process Benistant F, Tedesco S, Guegan G, Martin F, Heitzmann M, Dalzotto B
4055 - 4057	Fabrication and Performance of Thin Amorphous Si Subwavelength Transmission Grating for Controlling Vertical-Cavity Surface-Emitting Laser Polarization Zhuang L, Schablitsky S, Shi RC, Chou SY
4058 - 4061	Fabrication and Investigation of Nanostructures and Their Application in New Laser Devices Griesinger UA, Kronmuller S, Geiger M, Ottenwalder D, Scholz F, Schweizer H
4062 - 4067	Fabrication of Quantum Nanostructures for the Measurement of Thermoelectric Phenomena Hannan M, Grundbacher R, Adesida I, Giannetta RW
4068 - 4071	Fabrication of Si Double-Barrier Structure Yuki K, Hirai Y, Morimoto K, Morita K, Uenoyama T
4072 - 4075	Limit of Resolution of a Standing-Wave Atom Optical Lens Behringer RE, Natarajan V, Timp G, Tennant DM
4076 - 4079	Fabrication of a Refractive Microlens Integrated Onto the Monomode Fiber Babin S, Weber M, Koops HW
4080 - 4084	Controlling Sidewall Smoothness for Micromachined Si Mirrors and Lenses Juan WH, Pang SW
4085 - 4090	High-Resolution Silicon Patterning with Self-Assembled Monolayer Resists Lercel MJ, Whelan CS, Craighead HG, Seshadri K, Allara DL
4091 - 4095	Fabrication of InP-Based Wavelength-Division Multiplexing Arrayed-Wave-Guide Filters Using Chemically Assisted Ion-Beam Etching Youtsey C, Adesida I, Soole JB, Amersfoort MR, Leblanc HP, Andreadakis NC, Rajhel A, Caneau C, Koza MA, Bhat R
4096 - 4099	Fabrication of Subwavelength, Binary, Antireflection Surface-Relief Structures in the Near-Infrared Wendt JR, Vawter GA, Smith RE, Warren ME
4100 - 4104	Combined Method of Electron-Beam Lithography and Ion-Implantation Techniques for the Fabrication of High-Temperature Superconductor Josephson-Junctions Hollkott J, Hu S, Becker C, Auge J, Spangenberg B, Kurz H
4105 - 4109	Conductive Dots, Wires, and Supertips for Field Electron Emitters Produced by Electron-Beam-Induced Deposition on Samples Having Increased Temperature Koops HW, Schossler C, Kaya A, Weber M
4110 - 4114	Lithographic Band-Gap Tuning in Photonic Band-Gap Crystals Cheng CC, Scherer A, Arbetengels V, Yablonovitch E
4115 - 4118	Reliable Fabrication of Sub-40 nm Period Gratings Using a Nanolithography System with Interferometric Dynamic Focus Control Cumming DR, Thomas S, Beaumont SP, Weaver JM
4119 - 4123	Dry-Etching of Horizontal Distributed-Bragg-Reflector Mirrors for Wave-Guide Lasers Thomas S, Pang SW
4124 - 4128	Mold-Assisted Nanolithography - A Process for Reliable Pattern Replication Haisma J, Verheijen M, Vandenheuvel K, Vandenberg J
4129 - 4133	Nanoimprint Lithography Chou SY, Krauss PR, Renstrom PJ
4134 - 4139	Fabrication of Nanostructures on Silicon Surfaces on Wafer-Scale by Controlling Self-Organization Processes Ogino T, Hibino H, Prabhakaran K
4140 - 4143	Nanoscale Patterning of an Organosilane Monolayer on the Basis of Tip-Induced Electrochemistry in Atomic-Force Microscopy Sugimura H, Okiguchi K, Nakagiri N, Miyashita M
4144 - 4147	The Nanoscilloscope - Combined Topography and AC Field Probing with a Micromachined Tip Vanderweide DW, Neuzil P
4148 - 4152	3-Dimensional Electron-Optical Modeling of Scanning Tunneling Microscope Lithography in Resists Dobisz EA, Koops HW, Perkins FK, Marrian CR, Brandow SL
4153 - 4156	Silicon Metal-Oxide-Semiconductor Field-Effect Transistor with Gate Structures Defined by Scanned Probe Lithography Hagedom MS, Litfin DD, Price GM, Gordon AE, Higman TK
4157 - 4161	How Practical Is 193 nm Lithography Rothschild M, Burns JA, Cann SG, Forte AR, Keast CL, Kunz RR, Palmateer SC, Sedlacek JH, Uttaro R, Grenville A, Corliss D
4162 - 4166	Can Synthetic-Aperture Techniques Be Applied to Optical Lithography Fukuda H, Vonbunau RM
4167 - 4170	Large-Area Achromatic Interferometric Lithography for 100 nm Period Gratings and Grids Savas TA, Schattenburg ML, Carter JM, Smith HI
4171 - 4174	Experimental and Simulated Estimation of New Super Resolution Technique Kamon K, Matsui Y
4175 - 4178	Characterization and Correction of Optical Proximity Effects in Deep-Ultraviolet Lithography Using Behavior Modeling Yen A, Tritchkov A, Stirniman JP, Vandenberghe G, Jonckheere R, Ronse K, Vandenhove L
4179 - 4183	Application of Optical Lithography for High-Aspect-Ratio Microstructures Loechel B, Demmeler R, Rothe M, Bruenger W, Fehlberg S, Gruetzner G
4184 - 4187	Calorimetric Measurements of Optical-Materials for 193 nm Lithography Grenville A, Uttaro R, Sedlacek JH, Rothschild M, Corliss D
4188 - 4192	Fabrication of Metal-Oxide-Semiconductor Devices with Extreme-Ultraviolet Lithography Nguyen KB, Cardinale GF, Tichenor DA, Kubiak GD, Berger K, Raychaudhuri AK, Perras Y, Haney SJ, Nissen R, Krenz K, Stulen RH, Fujioka H, Hu C, Bokor J, Tennant DM, Fetter LA
4193 - 4198	Study on Elliptic Polarization Illumination Effects for Microlithography Jeon SH, Cho BD, Lee KW, Lee SM, Baik KH, Ahn CN, Yim DG
4199 - 4202	Passivate Sinx Half-Tone Phase-Shifting Mask for Deep-Ultraviolet Exposure Ito S, Iwamatsu T, Sato H, Asano M, Kawano K, Miyashita F
4203 - 4206	Prospect and Challenges of ArF Excimer-Laser Lithography Processes and Materials Ohfuji T, Ogawa T, Kuhara K, Sasago M
4207 - 4211	Plasma-Deposited Silylation Resist for 193 nm Lithography Horn MW, Maxwell BE, Goodman RB, Kunz RR, Eriksen LM
4212 - 4215	ArF Surface Modification Resist Process with Enhanced Water Sorption Ability Matsuo T, Endo M, Shirai M, Tsunooka M
4216 - 4220	Acid-Diffusion Suppression in Chemical Amplification Resists by Controlling Acid-Diffusion Channels in Base Matrix Polymers Yoshimura T, Shiraishi H, Terasawa T, Okazaki S
4221 - 4225	Diagnostics of Patterning Mechanisms in Chemically Amplified Resists from Bake Dependencies of Images Zuniga MA, Neureuther AR
4226 - 4228	A Study of Acid Diffusion in Chemically Amplified Deep-Ultraviolet Resist Itani T, Yoshino H, Hashimoto S, Yamana M, Samoto N, Kasama K
4229 - 4233	Multilayer Inorganic Antireflective System for Use in 248 nm Deep-Ultraviolet Lithography Cirelli RA, Weber GR, Kornblit A, Baker RM, Klemens FP, Demarco J, Pai CS
4234 - 4238	Effect of Gaseous Permeability of Overcoat Layer on KrF Chemically Amplified Positive Resists Kishimura S, Sakai J, Tsujita K, Matsui Y
4239 - 4245	Resist Application Effects on Chemically Amplified Resist Response Dentinger PM, Nelson CM, Rhyner SJ, Taylor JW, Fedynyshyn TH, Cronin MF
4246 - 4251	Impact of Reduced Resist Thickness on Deep-Ultraviolet Lithography Azuma T, Ohiwa T, Okumura K, Farrell T, Nunes R, Dobuzinsky D, Fichtl G, Gutmann A
4252 - 4256	Application of a Reaction-Diffusion Model for Negative Chemically Amplified Resists to Determine Electron-Beam Proximity Correction Parameters Glezos N, Patsis GP, Raptis I, Argitis P, Gentili M, Grella L
4257 - 4261	Negative Resist Corner Rounding - Envelope Volume Modeling Hagouel PI, Neureuther AR, Zenk AM
4262 - 4266	Electron-Beam-Induced Etching of Resist with Water-Vapor as the Etching Medium Kohlmannvonplaten KT, Bruenger WH
4267 - 4271	Correlation of Uviihs Resist Chemistry to Dissolution Rate Measurements Thackeray J, Fedynyshyn TH, Kang D, Rajaratnam MM, Wallraff G, Opitz J, Hofer D
4272 - 4276	Nanometer-Scale Resolution of Calixarene Negative Resist in Electron-Beam Lithography Fujita J, Ohnishi Y, Ochiai Y, Nomura E, Matsui S
4277 - 4282	Measurement of the Backscatter Coefficient Using Resist Response Curves for 20-100 keV Electron-Beam Lithography on Si Watson GP, Fu D, Berger SD, Tennant D, Fetter L, Novembre A, Biddick C
4283 - 4287	High-Voltage Electron-Beam Nanolithography on WO3 Carcenac F, Vieu C, Haghirigosnet AM, Simon G, Mejias M, Launois H
4288 - 4293	Extendibility of X-Ray-Lithography to Less-Than-or-Equal-to-130 nm Ground Rules in Complex Integrated-Circuit Patterns Hector S, Chu W, Thompson M, Pol V, Dauksher B, Cummings K, Resnick D, Pendharkar S, Maldonado J, Mccord M, Krasnoperova A, Liebmann L, Silverman J, Guo J, Khan M, Bollepalli S, Capodieci L, Cerrina F
4294 - 4297	Extendibility of Synchrotron-Radiation Lithography to the Sub-100 nm Region Deguchi K, Miyoshi K, Oda M, Matsuda T, Ozawa A, Yoshihara H
4298 - 4302	Replication of Near 0.1-Mu-M Hole Patterns by Using X-Ray-Lithography Kikuchi Y, Kihara N, Sugihara S, Saitoh S, Kondo K, Nomura H, Ozaki T
4303 - 4307	Overlay Accuracy of Canon Synchrotron-Radiation Stepper Xfpa for 0.15-Mu-M Process Saitoh K, Ohsawa H, Sentoku K, Matsumoto T, Mizusawa N, Fukuda Y, Uda K, Sumitani H, Hifumi T
4308 - 4313	Predicting Inplane Distortion from Electron-Beam Lithography on X-Ray Mask Membranes Laird DL, Engelstad RL, Puisto DM, Acosta RE, Cummings KD, Johnson WA
4314 - 4317	Trench Isolation at 300 nm Active Pitch Using X-Ray-Lithography Perera AH, Thompson M, Hector S, Iyer S, Azrak MJ, Zavala M
4318 - 4322	A Proposal for Maskless, Zone-Plate-Array Nanolithography Smith HI
4323 - 4327	Optimization of the Refractory X-Ray Mask Fabrication Sequence Cummings KD, Dauksher WJ, Johnson WA, Laudon MF, Engelstad R
4328 - 4331	Defect-Free X-Ray Masks for 0.2-Mu-M Large-Scale Integrated-Circuits Okada I, Saitoh Y, Sekimoto M, Ohkubo T, Matsuda T
4332 - 4335	X-Ray Mask Distortion Correction Technology Using Pattern Displacement Simulator Uchiyama S, Oda M, Matsuda T
4336 - 4340	X-Ray-Induced Mask Contamination and Particulate Monitoring in X-Ray Steppers Capasso C, Pomerene A, Chu W, Leavey J, Lamberti A, Hector S, Oberschmidt J, Pol V
4341 - 4344	Multiple-Pass Writing Optimization for Proximity X-Ray Mask-Making Using Electron-Beam Lithography Puisto DM, Lawliss MS, Rocque JM, Kimmel KR, Hartley JG
4345 - 4349	Fabrication of X-Ray-Lithography Masks with Optical Lithography Latulipe D, Maldonado JR, Mitchell P, Leduc R, Babich I
4350 - 4353	Dynamic Motion of Mask Membrane in X-Ray Stepper Uchida N, Kikuiri N, Nishida J
4354 - 4358	Image Placement Errors in X-Ray Masks Induced by Changes in Resist Stress During Electron-Beam Writing Acosta RE, Puisto D
4359 - 4362	Fabrication of X-Ray Masks for Giga-Bit DRAM by Using a SiC Membrane and W-Ti Absorber Marumoto K, Yabe H, Aya S, Kitamura K, Sasaki K, Kise K, Miyachi T
4363 - 4365	Sputtered Tax Film Properties for X-Ray Mask Absorbers Yoshihara T, Kotsuji S, Suzuki K
4366 - 4370	X-Ray Mask Fabrication Technology for 0.1-Mu-M Very Large-Scale Integrated-Circuits Oda M, Uchiyama S, Watanabe T, Komatsu K, Matsuda T