Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.28, No.5 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (35 articles)

899 - 902	Photoyield recovery of Cs+NF3 activated negative electron affinity GaAs photoemitters without additional alkali deposition Mulhollan GA, Bierman JC
903 - 907	Integrated high-inductance three-dimensional toroidal inductors Yu L, Weon DH, Kim JI, Mohammadi S
908 - 911	InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates Wu M, Leach JH, Ni X, Li X, Xie J, Dogan S, Ozgur U, Morkoc H, Paskova T, Preble E, Evans KR, Lu CZ
912 - 915	TiN thin film resistors for monolithic microwave integrated circuits Malmros A, Sudow M, Andersson K, Rorsman N
916 - 920	Planarization of high aspect ratio p-i-n diode pillar arrays for blanket electrical contacts Voss LF, Shao Q, Reinhardt CE, Graff RT, Conway AM, Nikolic RJ, Deo N, Cheung CL
921 - 925	Micro- and nanopatterned polymethylmethacrylate layers on plastic poly(ethylene terephthalate) substrates by modified roller-reversal imprint process Cheng CY, Hong FCN, Huang CY
926 - 934	Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing Petit-Etienne C, Darnon M, Vallier L, Pargon E, Cunge G, Boulard F, Joubert O, Banna S, Lill T
935 - 939	High-resolution transmission-electron microscope characterization of onionlike carbon transformed from nanodiamond Zou Q, Wang MZ, Li YG, Lu B
940 - 945	Direct-write electron beam lithography in silicon dioxide at low energy Beaumont A, Dubuc C, Beauvais J, Drouin D
946 - 951	Modeling of precursor coverage in ion-beam induced etching and verification with experiments using XeF2 on SiO2 Ebm C, Hobler G, Waid S, Wanzenboeck HD
952 - 960	Mechanistic study of ultralow k-compatible carbon dioxide in situ photoresist ashing processes. I. Process performance and influence on ULK material modification Kuo MS, Pal AR, Oehrlein GS, Lazzeri P, Anderle M
961 - 967	Mechanistic study of ultralow k-compatible carbon dioxide in situ photoresist ashing processes. II. Interaction with preceding fluorocarbon plasma ultralow k etching processes Kuo MS, Pal AR, Oehrlein GS, Hua XF
968 - 972	Degradation behavior of release layers for nanoimprint lithography formed on atomically flat Si(111) terraces Kuwabara K, Miyauchi A, Sugimura H
973 - 977	Line-width dependency on electromigration performance for long and short copper interconnects Cheng YL, Chang WY, Wang YL
978 - 984	Silicon on insulator nanoscale backside interconnects for atomic and molecular scale circuits Lwin MHT, Tun TN, Kim HH, Kajen RS, Chandrasekhar N, Joachim C
985 - 992	Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors Dimitrakopoulos C, Lin YM, Grill A, Farmer DB, Freitag M, Sun YN, Han SJ, Chen ZH, Jenkins KA, Zhu Y, Liu ZH, McArdle TJ, Ott JA, Wisnieff R, Avouris P
993 - 1004	Photoresist modifications by plasma vacuum ultraviolet radiation: The role of polymer structure and plasma chemistry Weilnboeck F, Bruce RL, Engelmann S, Oehrlein GS, Nest D, Chung TY, Graves D, Li M, Wang D, Andes C, Hudson EA
L39 - L42	Fabrication of antireflection-structured surface using vertical nanowires as an initial structure Nagato K, Moritani H, Hamaguchi T, Nakao M
L43 - L46	Ti/Au Ohmic contacts to indium zinc oxide thin films on paper substrates Khanna R, Douglas EA, Norton DP, Pearton SJ, Ren F
L47 - L51	Proton irradiation effects on AlN/GaN high electron mobility transistors Lo CF, Chang CY, Chu BH, Kim HY, Kim J, Cullen DA, Zhou L, Smith DJ, Pearton SJ, Dabiran A, Cui B, Chow PP, Jang S, Ren F
L52 - L54	Radioisotope-powered ion gauge with super high stability, long life, and large sensitivity range from ultrahigh vacuum to high pressure Lu YR, Lal A
L55 - L60	Stabilization of a tungsten < 310 > cold field emitter Kasuya K, Katagiri S, Ohshima T, Kokubo S
1005 - 1010	Device characteristics of HfON charge-trap layer nonvolatile memory Lee T, Banerjee SK
1011 - 1015	GaN epitaxial films grown by hydride vapor phase epitaxy on polycrystalline chemical vapor deposition diamond substrates using surface nanostructuring with TiN or anodic Al oxide Polyakov AY, Markov AV, Duhnovsky MP, Mezhennyi MV, Donskov AA, Malakhov SS, Govorkov AV, Kozlova YP, Pavlov VF, Smirnov NB, Yugova TG, Belogorokhov AI, Belogorokhov IA, Ratnikova AK, Fyodorov YY, Kudryashov OY, Leontyev IA, Ratushnyi VI, Pearton SJ
1016 - 1019	Enhanced electron-field emission from nanodiamond ridge-structured emission arrays capped on micropatterned silicon pillars Ghosh N, Kang WP, Davidson JL, Raina S
1020 - 1025	Modified postannealing of the Ge condensation process for better-strained Si material and devices Liu XY, Ma XB, Du XF, Liu WL, Song ZT, Lin CL
1026 - 1029	Ex situ tunnel junction process technique characterized by Coulomb blockade thermometry Prunnila M, Meschke M, Gunnarsson D, Enouz-Vedrenne S, Kivioja JM, Pekola JP
1030 - 1038	Holographic realization of hexagonal two dimensional photonic crystal structures with elliptical geometry Hung YJ, Lee SL, Pan YT, Thibeault BJ, Coldren LA
1039 - 1043	a-plane GaN hydride vapor phase epitaxy on a-plane GaN templates with and without use of TiN intermediate layers Polyakov AY, Markov AV, Mezhennyi MV, Donskov AA, Malakhov SS, Govorkov AV, Kozlova YP, Pavlov VF, Smirnov NB, Yugova TG, Lee IH, Han J, Sun Q, Pearton SJ
1044 - 1047	Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors Chang CY, Anderson T, Hite J, Lu L, Lo CF, Chu BH, Cheney DJ, Douglas EA, Gila BP, Ren F, Via GD, Whiting P, Holzworth R, Jones KS, Jang S, Pearton SJ
1048 - 1055	Spatial coherence in electron-beam patterning Perera GM, Stein GE, Liddle JA
1056 - 1059	Effects of nanoscale Ni, Al, and Ni-Al interlayers on nucleation and growth of diamond on Si Li YS, Tang Y, Yang Q, Hirose A
1060 - 1065	Electron emission from silicon tip arrays controlled by np junction minority carrier injection Young RM, Nathanson HC, Howell RS, Stewart EJ, Nechay BA, Braggins TT, Graves EM, Van Campen SD, Clarke RC, Miserendino SB, Hawk J
1066 - 1069	Investigation of the behavior of serum and plasma in a microfluidics system Henderson JC, Yacopucci M, Chun CJ, Lenghaus K, Sommerhage F, Hickman JJ
1070 - 1072	Comparative study on the nonperiodic and periodic gratings for scanning probe microscopy drift measurements Niu D, Li JW, Chen YH, Huang WH