L33 - L35 |
Synthesis of nitrogen passivated rare-earth doped hafnia thin films and high temperature electrochemical conduction studies Ramanathanan S, Karthikeyan A, Govindarajan SA, Kirsch PD |
L36 - L40 |
Ion beam synthesis of Ni nanoparticles embedded in quartz Kumar P, Kumar R, Kanjilal D, Knobel M, Thakur P, Chae KH |
1197 - 1276 |
Gas-assisted focused electron beam and ion beam processing and fabrication Utke I, Hoffmann P, Melngailis J |
1277 - 1280 |
Structural and electrical properties of Bi1.5Mg1.0Nb1.5O7 thin films deposited on Pt/TiO2/SiO2/Si substrates by rf-magnetron sputtering Ahn JK, Cuong ND, Yoon SG, Kim CS |
1281 - 1288 |
Surface roughness generated by plasma etching processes of silicon Martina M, Cunge G |
1289 - 1293 |
System-level line-edge roughness limits in extreme ultraviolet lithography Naulleau PP, Niakoula D, Zhang GJ |
1294 - 1300 |
Highly reliable growth process of carbon nanowalls using radical injection plasma-enhanced chemical vapor deposition Kondo S, Hori M, Yamakawa K, Den S, Kano H, Hiramatsu M |
1301 - 1304 |
Metal-containing release layers for use with UV-cure nanoimprint lithographic template materials Houle FA, Raoux S, Miller DC, Jahnes C, Rossnagel S |
1305 - 1308 |
Stable field emission from screen-printed ZnO-tetrapod emitters Hou K, Li C, Lei W, Zhang XB, Qu K, Yang XX, Zhao ZW, Wang BP |
1309 - 1314 |
Conformal filling of silicon micropillar platform with (10)boron Deo N, Brewer JR, Reinhardt CE, Nikolic RJ, Cheung CL |
1315 - 1320 |
Synthesis and characterization of TiO2-Ge nanocomposites Goyal A, Rumaiz AK, Miao Y, Hazra S, Ni C, Shah SI |
1321 - 1325 |
Preparation and field emission property of nanodiamond-cluster-embedded diamondlike carbon film Xie WG, Chen J, Ming WW, Chen J, Zhou J, Deng SZ, Xu NS |
1326 - 1333 |
Smooth sidewall in InP-based photonic crystal membrane etched by N-2-based inductively coupled plasma Lee KH, Guilet S, Patriarche G, Sagnes I, Talneau A |
1334 - 1337 |
Characterization of photoconductive CdS thin films prepared on glass substrates for photoconductive-sensor applications Hur SG, Kim ET, Lee JH, Kim GH, Yoon SG |
1338 - 1343 |
Interfacial and electrical properties of ZrxTi1-xO4 (x=0.66) films deposited by liquid-delivery metal organic chemical vapor deposition to be used as high-k gate dielectric Sahu BS, Pammi SVN, Seong NJ, Yoon SG |
1344 - 1349 |
Metal nanoparticle embedded porous thin films prepared by oblique angle coevaporation Blackwell R, Zhao YP |
1350 - 1358 |
Optical and photocatalytic properties of oblique angle deposited TiO2 nanorod array He YP, Zhang ZY, Zhao YP |
1359 - 1362 |
Ti/Ni bilayer Ohmic contact on 4H-SiC Ohyanagi T, Onose Y, Watanabe A |
1363 - 1367 |
A thermocompressive bonding method using a pure sputtered Au layer and its wafer scale package application Kim J, Kwon S, Hong Y, Song I, Ju B |
1368 - 1372 |
Improvement in GaN and AlGaN/GaN Schottky diode performance by reduction in epitaxial film dislocation density Ewing DJ, Derenge MA, Shah PB, Lee U, Zheleva TS, Jones KA |
1373 - 1378 |
Etching rate, optical transmittance, and charge trapping characteristics of Al-rich Al2O3 thin film fabricated by rf magnetron cosputtering Nakata S, Nagai S, Kumeda M, Kawae T, Morimoto A, Shimizu T |
1379 - 1381 |
Flexible organic light-emitting diodes with improved performance by insertion of an UV-sensitive layer Lin H, Yu JS, Wang N, Huang CH, Jiang YD |
1382 - 1389 |
Effects of film reoxidation on the growth and material properties of ultrathin dielectrics grown by rapid thermal nitridation in ammonia D'Emic C, Newbury J, Scerbo C, Copel M, Gordon M |
1390 - 1394 |
Direct UV-imprint lithography using conductive nanofiller-dispersed UV-curable resin Choi JH, Lee SW, Choi DG, Kim KD, Jeong JH, Lee ES |
1395 - 1397 |
X-ray photoelectron spectroscopy and low-energy electron diffraction analyses on the extremely low work-function surface of W(100) modified by yttrium oxide Kawakubo T, Shimoyama Y, Nakane H, Adachi H |
1398 - 1403 |
Comparison between GaN thin film grown by femtosecond and nanosecond pulsed laser depositions Tong XL, Jiang DS, Liu L, Dai H |
1404 - 1406 |
Spherical field emission cathode based on carbon nanotube paste and its application in luminescent bulbs Fu WQ, Liu P, Tang J, Liu L, Fan SS |
1407 - 1411 |
A study of patterning and annealing effects on the performance of magnetic planar inductor Sun HF, Liu ZW, Zhao JH, Wang L, Zhu J |
1412 - 1416 |
High sensitivity cantilevers for measuring persistent currents in normal metal rings Bleszynski-Jayich AC, Shanks WE, Ilic BR, Harris JGE |
1417 - 1419 |
Effect of contact metals on the piezoelectric properties of aluminum nitride thin films Harman J, Kabulski A, Pagan VR, Famouri P, Kasarla KR, Rodak LE, Hensel JP, Korakakis D |
1420 - 1424 |
Electrical characteristics of Pt/Au schottky contacts to plasma-etched AlGaN Syed AA, Cao XA, Woodworth AA, Stinespring CD |
1425 - 1439 |
Atomic-scale cellular model and profile simulation of poly-Si gate etching in high-density chlorine-based plasmas: Effects of passivation layer formation on evolution of feature profiles Osano Y, Ono K |
1440 - 1444 |
Etching of TiN-based gates for advanced complementary metal-oxide-semiconductor devices Bliznetsov V, Singh N, Kumar R, Balasubramanian N, Guo P, Lee SJ, Cai Y |
1445 - 1449 |
Influence of vacuum environment on conductive atomic force microscopy measurements of advanced metal-oxide-semiconductor gate dielectrics Aguilera L, Polspoel W, Volodin A, Van Haesendonck C, Porti M, Vandervorst W, Nafria M, Aymerich X |
1450 - 1450 |
Recent advance in protection technology for extreme ultraviolet lithography masks under low-pressure condition (vol 26, pg L1, 2008) Kim JH |
1454 - 1460 |
Interfacial effects in thin films of polymeric semiconductors Rivnay J, Jimison LH, Toney MF, Preiner M, Melosh NA, Salleo A |
1461 - 1465 |
Single molecule measurements with photoelectron emission microscopy Kong XH, Rowe JE, Nemanich RJ |
1466 - 1471 |
Depth-resolved cathodoluminescence spectroscopy study of defects in SrTiO3 Zhang J, Walsh S, Brooks C, Schlom DG, Brillson LJ |
1472 - 1476 |
Effects of oxygen contents in the active channel layer on electrical characteristics of ZnO-based thin film transistors Moon YK, Moon DY, Lee S, Lee SH, Park JW, Jeong CO |
1477 - 1482 |
Impact of near-surface native point defects, chemical reactions, and surface morphology on ZnO interfaces Doutt DR, Zgrabik C, Mosbacker HL, Brillson LJ |
1483 - 1487 |
Theory of electron tunneling through a scanning tunneling microscopy-tip/quantum dot junction Kuo DMT, Chang YC |
1488 - 1491 |
Imaging classical and quantum structures in an open quantum dot using scanning gate microscopy Burke AM, Aoki N, Akis R, Ochiai Y, Ferry DK |
1492 - 1503 |
Quantum ring formation and antimony segregation in GaSb/GaAs nanostructures Timm R, Lenz A, Eisele H, Ivanova L, Dahne M, Balakrishnan G, Huffaker DL, Farrer I, Ritchie DA |
1504 - 1507 |
Basal plane dislocation reduction for 8 degrees off-cut, 4H-SiC using in situ variable temperature growth interruptions VanMil BL, Stahlbush RE, Myers-Ward RL, Lew KK, Eddy CR, Gaskill DK |
1508 - 1515 |
Interaction of microwaves with photoelectrons in semiconductors Ahrenkiel RK, Johnston SW |
1516 - 1520 |
As-rich InAs(001)-(2x4) phases investigated by in situ surface x-ray diffraction Tinkham BP, Braun W, Ploog KH, Takahasi M, Mizuki J, Grosse F |
1521 - 1525 |
Interface structure and transport of complex oxide junctions Nelson-Cheeseman BB, Wong F, Chopdekar RV, Chi M, Arenholz E, Browning ND, Suzuki Y |
1526 - 1529 |
Magnetocapacitance effect in InMnAs/InAs p-n heterojunctions Rangaraju N, Wessels BW |
1530 - 1533 |
Electronic signature of MnAs phases in bare and buried films grown on GaAs(001) Moreno M, Kumar A, Tallarida M, Ney A, Ploog KH, Horn K |
1534 - 1541 |
Surface bonding effects in compound semiconductor nanoparticles: II Farrell HH |
1542 - 1550 |
Steady state and transient behavior of currents in AlGaN/GaN planar Schottky diodes and mechanism of current collapse Hasegawa H, Akazawa M |
1551 - 1559 |
Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix Yoshikawa A, Che SB, Hashimoto N, Saito H, Ishitani Y, Wang XQ |
1560 - 1568 |
Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate Liang D, Bowers JE |
1569 - 1578 |
Admittance study of GaAs high-k metal-insulator-semiconductor capacitors with Si interface control layer Akazawa M, Hasegawa H |
1579 - 1584 |
Atomic scale dielectric constant near the SiO2/Si(001) interface Wakui S, Nakamura J, Natori A |
1585 - 1587 |
Optimum ambient N-2 pressure during HfAlO pulsed-laser deposition in Pt/SBT/HfAlO/Si field effect transistors Takahashi M, Horiuchi T, Wang S, Li QH, Sakai S |
1588 - 1591 |
Characteristics of lanthanum hafnium oxide deposited by electron cyclotron resonance atomic layer deposition Kim WS, Kim TS, Kang BW, Ko MG, Park SK, Park JW |
1592 - 1596 |
Nickel and nickel silicide Schottky barrier contacts to n-type silicon nanowires Woodruff SM, Dellas NS, Liu BZ, Eichfeld SM, Mayer TS, Redwing JM, Mohney SE |
1597 - 1601 |
Au/Ag and Au/Pd molecular contacts to GaAs Ahktari-Zavareh A, Li WJ, Kavanagh KL, Trionfi AJ, Jones JC, Reno JL, Hsu JWP, Talin AA |
1606 - 1608 |
Atomic force microscopy and scanning tunneling microscopy-spectroscopy characterization of ZnO nanobelts Maffeis TGG, Penny MW, Brown MR, Liew KW, Fu D, Tsolakoglou N, Wright CJ, Wilks SP |
1609 - 1612 |
Tunable double dots and Kondo enhanced Andreev transport in InAs nanowires Sand-Jespersen T, Aagesen M, Sorensen CB, Lindelof PE, Nygard J |
1613 - 1618 |
Other one-dimensional systems and thermal properties Dresselhaus MS, Dresselhaus G, Hofmann M |
1619 - 1623 |
Surface bound organic nanowires Balzer F, Schiek M, Rubahn HG, Al-Shamery K, Lutzen A |
1624 - 1627 |
Generation of dc spin current in a narrow channel with Rashba and Dresselhaus spin-orbit interactions Tang CS, Kuan WH, Xu W, Chang YC |
1628 - 1631 |
Dimensionality in metal-oxide-semiconductor field-effect transistors: A comparison of one-dimensional and two-dimensional ballistic transistors Kim R, Neophytou N, Paul A, Klimeck G, Lundstrom MS |