화학공학소재연구정보센터

Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.26, No.4 Entire volume, number list
ISSN: 1071-1023 (Print) 

In this Issue (65 articles)

L33 - L35 Synthesis of nitrogen passivated rare-earth doped hafnia thin films and high temperature electrochemical conduction studies
Ramanathanan S, Karthikeyan A, Govindarajan SA, Kirsch PD
L36 - L40 Ion beam synthesis of Ni nanoparticles embedded in quartz
Kumar P, Kumar R, Kanjilal D, Knobel M, Thakur P, Chae KH
1197 - 1276 Gas-assisted focused electron beam and ion beam processing and fabrication
Utke I, Hoffmann P, Melngailis J
1277 - 1280 Structural and electrical properties of Bi1.5Mg1.0Nb1.5O7 thin films deposited on Pt/TiO2/SiO2/Si substrates by rf-magnetron sputtering
Ahn JK, Cuong ND, Yoon SG, Kim CS
1281 - 1288 Surface roughness generated by plasma etching processes of silicon
Martina M, Cunge G
1289 - 1293 System-level line-edge roughness limits in extreme ultraviolet lithography
Naulleau PP, Niakoula D, Zhang GJ
1294 - 1300 Highly reliable growth process of carbon nanowalls using radical injection plasma-enhanced chemical vapor deposition
Kondo S, Hori M, Yamakawa K, Den S, Kano H, Hiramatsu M
1301 - 1304 Metal-containing release layers for use with UV-cure nanoimprint lithographic template materials
Houle FA, Raoux S, Miller DC, Jahnes C, Rossnagel S
1305 - 1308 Stable field emission from screen-printed ZnO-tetrapod emitters
Hou K, Li C, Lei W, Zhang XB, Qu K, Yang XX, Zhao ZW, Wang BP
1309 - 1314 Conformal filling of silicon micropillar platform with (10)boron
Deo N, Brewer JR, Reinhardt CE, Nikolic RJ, Cheung CL
1315 - 1320 Synthesis and characterization of TiO2-Ge nanocomposites
Goyal A, Rumaiz AK, Miao Y, Hazra S, Ni C, Shah SI
1321 - 1325 Preparation and field emission property of nanodiamond-cluster-embedded diamondlike carbon film
Xie WG, Chen J, Ming WW, Chen J, Zhou J, Deng SZ, Xu NS
1326 - 1333 Smooth sidewall in InP-based photonic crystal membrane etched by N-2-based inductively coupled plasma
Lee KH, Guilet S, Patriarche G, Sagnes I, Talneau A
1334 - 1337 Characterization of photoconductive CdS thin films prepared on glass substrates for photoconductive-sensor applications
Hur SG, Kim ET, Lee JH, Kim GH, Yoon SG
1338 - 1343 Interfacial and electrical properties of ZrxTi1-xO4 (x=0.66) films deposited by liquid-delivery metal organic chemical vapor deposition to be used as high-k gate dielectric
Sahu BS, Pammi SVN, Seong NJ, Yoon SG
1344 - 1349 Metal nanoparticle embedded porous thin films prepared by oblique angle coevaporation
Blackwell R, Zhao YP
1350 - 1358 Optical and photocatalytic properties of oblique angle deposited TiO2 nanorod array
He YP, Zhang ZY, Zhao YP
1359 - 1362 Ti/Ni bilayer Ohmic contact on 4H-SiC
Ohyanagi T, Onose Y, Watanabe A
1363 - 1367 A thermocompressive bonding method using a pure sputtered Au layer and its wafer scale package application
Kim J, Kwon S, Hong Y, Song I, Ju B
1368 - 1372 Improvement in GaN and AlGaN/GaN Schottky diode performance by reduction in epitaxial film dislocation density
Ewing DJ, Derenge MA, Shah PB, Lee U, Zheleva TS, Jones KA
1373 - 1378 Etching rate, optical transmittance, and charge trapping characteristics of Al-rich Al2O3 thin film fabricated by rf magnetron cosputtering
Nakata S, Nagai S, Kumeda M, Kawae T, Morimoto A, Shimizu T
1379 - 1381 Flexible organic light-emitting diodes with improved performance by insertion of an UV-sensitive layer
Lin H, Yu JS, Wang N, Huang CH, Jiang YD
1382 - 1389 Effects of film reoxidation on the growth and material properties of ultrathin dielectrics grown by rapid thermal nitridation in ammonia
D'Emic C, Newbury J, Scerbo C, Copel M, Gordon M
1390 - 1394 Direct UV-imprint lithography using conductive nanofiller-dispersed UV-curable resin
Choi JH, Lee SW, Choi DG, Kim KD, Jeong JH, Lee ES
1395 - 1397 X-ray photoelectron spectroscopy and low-energy electron diffraction analyses on the extremely low work-function surface of W(100) modified by yttrium oxide
Kawakubo T, Shimoyama Y, Nakane H, Adachi H
1398 - 1403 Comparison between GaN thin film grown by femtosecond and nanosecond pulsed laser depositions
Tong XL, Jiang DS, Liu L, Dai H
1404 - 1406 Spherical field emission cathode based on carbon nanotube paste and its application in luminescent bulbs
Fu WQ, Liu P, Tang J, Liu L, Fan SS
1407 - 1411 A study of patterning and annealing effects on the performance of magnetic planar inductor
Sun HF, Liu ZW, Zhao JH, Wang L, Zhu J
1412 - 1416 High sensitivity cantilevers for measuring persistent currents in normal metal rings
Bleszynski-Jayich AC, Shanks WE, Ilic BR, Harris JGE
1417 - 1419 Effect of contact metals on the piezoelectric properties of aluminum nitride thin films
Harman J, Kabulski A, Pagan VR, Famouri P, Kasarla KR, Rodak LE, Hensel JP, Korakakis D
1420 - 1424 Electrical characteristics of Pt/Au schottky contacts to plasma-etched AlGaN
Syed AA, Cao XA, Woodworth AA, Stinespring CD
1425 - 1439 Atomic-scale cellular model and profile simulation of poly-Si gate etching in high-density chlorine-based plasmas: Effects of passivation layer formation on evolution of feature profiles
Osano Y, Ono K
1440 - 1444 Etching of TiN-based gates for advanced complementary metal-oxide-semiconductor devices
Bliznetsov V, Singh N, Kumar R, Balasubramanian N, Guo P, Lee SJ, Cai Y
1445 - 1449 Influence of vacuum environment on conductive atomic force microscopy measurements of advanced metal-oxide-semiconductor gate dielectrics
Aguilera L, Polspoel W, Volodin A, Van Haesendonck C, Porti M, Vandervorst W, Nafria M, Aymerich X
1450 - 1450 Recent advance in protection technology for extreme ultraviolet lithography masks under low-pressure condition (vol 26, pg L1, 2008)
Kim JH
1454 - 1460 Interfacial effects in thin films of polymeric semiconductors
Rivnay J, Jimison LH, Toney MF, Preiner M, Melosh NA, Salleo A
1461 - 1465 Single molecule measurements with photoelectron emission microscopy
Kong XH, Rowe JE, Nemanich RJ
1466 - 1471 Depth-resolved cathodoluminescence spectroscopy study of defects in SrTiO3
Zhang J, Walsh S, Brooks C, Schlom DG, Brillson LJ
1472 - 1476 Effects of oxygen contents in the active channel layer on electrical characteristics of ZnO-based thin film transistors
Moon YK, Moon DY, Lee S, Lee SH, Park JW, Jeong CO
1477 - 1482 Impact of near-surface native point defects, chemical reactions, and surface morphology on ZnO interfaces
Doutt DR, Zgrabik C, Mosbacker HL, Brillson LJ
1483 - 1487 Theory of electron tunneling through a scanning tunneling microscopy-tip/quantum dot junction
Kuo DMT, Chang YC
1488 - 1491 Imaging classical and quantum structures in an open quantum dot using scanning gate microscopy
Burke AM, Aoki N, Akis R, Ochiai Y, Ferry DK
1492 - 1503 Quantum ring formation and antimony segregation in GaSb/GaAs nanostructures
Timm R, Lenz A, Eisele H, Ivanova L, Dahne M, Balakrishnan G, Huffaker DL, Farrer I, Ritchie DA
1504 - 1507 Basal plane dislocation reduction for 8 degrees off-cut, 4H-SiC using in situ variable temperature growth interruptions
VanMil BL, Stahlbush RE, Myers-Ward RL, Lew KK, Eddy CR, Gaskill DK
1508 - 1515 Interaction of microwaves with photoelectrons in semiconductors
Ahrenkiel RK, Johnston SW
1516 - 1520 As-rich InAs(001)-(2x4) phases investigated by in situ surface x-ray diffraction
Tinkham BP, Braun W, Ploog KH, Takahasi M, Mizuki J, Grosse F
1521 - 1525 Interface structure and transport of complex oxide junctions
Nelson-Cheeseman BB, Wong F, Chopdekar RV, Chi M, Arenholz E, Browning ND, Suzuki Y
1526 - 1529 Magnetocapacitance effect in InMnAs/InAs p-n heterojunctions
Rangaraju N, Wessels BW
1530 - 1533 Electronic signature of MnAs phases in bare and buried films grown on GaAs(001)
Moreno M, Kumar A, Tallarida M, Ney A, Ploog KH, Horn K
1534 - 1541 Surface bonding effects in compound semiconductor nanoparticles: II
Farrell HH
1542 - 1550 Steady state and transient behavior of currents in AlGaN/GaN planar Schottky diodes and mechanism of current collapse
Hasegawa H, Akazawa M
1551 - 1559 Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix
Yoshikawa A, Che SB, Hashimoto N, Saito H, Ishitani Y, Wang XQ
1560 - 1568 Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate
Liang D, Bowers JE
1569 - 1578 Admittance study of GaAs high-k metal-insulator-semiconductor capacitors with Si interface control layer
Akazawa M, Hasegawa H
1579 - 1584 Atomic scale dielectric constant near the SiO2/Si(001) interface
Wakui S, Nakamura J, Natori A
1585 - 1587 Optimum ambient N-2 pressure during HfAlO pulsed-laser deposition in Pt/SBT/HfAlO/Si field effect transistors
Takahashi M, Horiuchi T, Wang S, Li QH, Sakai S
1588 - 1591 Characteristics of lanthanum hafnium oxide deposited by electron cyclotron resonance atomic layer deposition
Kim WS, Kim TS, Kang BW, Ko MG, Park SK, Park JW
1592 - 1596 Nickel and nickel silicide Schottky barrier contacts to n-type silicon nanowires
Woodruff SM, Dellas NS, Liu BZ, Eichfeld SM, Mayer TS, Redwing JM, Mohney SE
1597 - 1601 Au/Ag and Au/Pd molecular contacts to GaAs
Ahktari-Zavareh A, Li WJ, Kavanagh KL, Trionfi AJ, Jones JC, Reno JL, Hsu JWP, Talin AA
1606 - 1608 Atomic force microscopy and scanning tunneling microscopy-spectroscopy characterization of ZnO nanobelts
Maffeis TGG, Penny MW, Brown MR, Liew KW, Fu D, Tsolakoglou N, Wright CJ, Wilks SP
1609 - 1612 Tunable double dots and Kondo enhanced Andreev transport in InAs nanowires
Sand-Jespersen T, Aagesen M, Sorensen CB, Lindelof PE, Nygard J
1613 - 1618 Other one-dimensional systems and thermal properties
Dresselhaus MS, Dresselhaus G, Hofmann M
1619 - 1623 Surface bound organic nanowires
Balzer F, Schiek M, Rubahn HG, Al-Shamery K, Lutzen A
1624 - 1627 Generation of dc spin current in a narrow channel with Rashba and Dresselhaus spin-orbit interactions
Tang CS, Kuan WH, Xu W, Chang YC
1628 - 1631 Dimensionality in metal-oxide-semiconductor field-effect transistors: A comparison of one-dimensional and two-dimensional ballistic transistors
Kim R, Neophytou N, Paul A, Klimeck G, Lundstrom MS