Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.16, No.4 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (141 articles)

1773 - 1776	Strain-induced birefringence in Si1-xGex optical waveguides Robillard M, Jessop PE, Bruce DM, Janz S, Williams RL, Mailhot S, Lafontaine H, Kovacic SJ, Ojha JJ
1777 - 1785	Relaxation of strained, epitaxial Si1-xSnx Fyhn MF, Chevallier J, Larsen AN
1786 - 1789	Layer by layer growth mode stabilization and step-edge smoothing of cation-stabilized In1-xGaxAs strained layers grown on InP Robach Y, Solere A, Gendry M, Porte L
1790 - 1793	Reduced 980 nm laser facet absorption by band gap shifted extended cavities Piva PG, Goldberg RD, Mitchell IV, Fafard S, Dion M, Buchanan M, Charbonneau S, Hillier G, Miner C
1794 - 1803	Localized interface states and the optical spectra of AlSb/InAs heterostructures Shaw MJ, Gopir G, Briddon PR, Jaros M
1804 - 1807	Chemical beam epitaxial growth of GaAs1-xPx on GaAs (100) substrates Wildt D, Garcia BJ, Castano JL, Piqueras J, Pastor CJ
1808 - 1811	Effect of a deep-level trap on hole transport in In0.5Al0.5As/In0.5Ga0.5As metal-semiconductor-metal photodetectors Lee KJ, Johnson FG, Johnson WB, Kim J, Lee CH
1812 - 1817	Effect of the forward biasing the source-substrate junction in n-metal-oxide-semiconductor transistors for possible low power complementary metal-oxide-semiconductor integrated circuits' applications De la Hidalga FJ, Deen MJ, Gutierrez EA, Balestra F
1818 - 1822	Reduced damage reactive ion etching process for fabrication of InGaAsP/InGaAs multiple quantum well ridge waveguide lasers Qiu BC, Ooi BS, Bryce AC, Hicks SE, Wilkinson CDW, De la Rue RM, Marsh JH
1823 - 1832	X-ray photoelectron spectroscopy damage characterization of reactively ion etched InP in CH4-H-2 plasmas Feurprier Y, Cardinaud C, Turban G
1833 - 1840	Germanium etching in high density plasmas for 0.18 mu m complementary metal-oxide-semiconductor gate patterning applications Monget C, Schiltz A, Joubert O, Vallier L, Guillermet M, Tormen B
1841 - 1845	Estimation of the activation energy for Ar/Cl-2 plasma etching of InP via holes using electron cyclotron resonance Sabin EW
1846 - 1850	Abrupt reduction in poly-Si etch rate in HBr/O-2 plasma Kuroda S, Iwakuro H
1851 - 1859	Structural, optical, and electrical properties of nanocrystalline silicon films deposited by hydrogen plasma sputtering Garrido B, Perez-Rodriguez A, Morante JR, Achiq A, Gourbilleau F, Madelon R, Rizk R
1860 - 1863	Deep, vertical etching of flame hydrolysis deposited hi-silica glass films for optoelectronic and bioelectronic applications McLaughlin AJ, Bonar JR, Jubber MG, Marques PVS, Hicks SE, Wilkinson CDW, Aitchison JS
1864 - 1866	Sidewall slope control of chemically assisted ion-beam etched structures in InP-based materials Daleiden J, Czotscher K, Hoffmann C, Kiefer R, Klussmann S, Muller S, Nutsch A, Pletschen W, Weisser S, Trankle G, Braunstein J, Weimann G
1867 - 1872	Evaluation of trifluoroiodomethane as SiO2 etchant for global warming reduction Fracassi F, d'Agostino R
1873 - 1880	Electrical characterization and annealing behavior of defect introduced in Si during sputter etching in an Ar plasma Deenapanray PNK, Auret FD, Myburg G
1881 - 1884	Low frequency noise in heavily doped polysilicon thin film resistors Deen MJ, Rumyantsev S, Orchard-Webb J
1885 - 1890	Damage-free cleaning of Si(001) using glancing-angle ion bombardment Labanda JGC, Barnett SA, Hultman L
1891 - 1893	Inductively coupled plasma etching of (Ba,Sr)TiO3 thin films Lee HM, Kim DC, Jo W, Kim KY
1894 - 1900	Reactive ion etching of Pb(ZrxTi1-x)O-3 thin films in an inductively coupled plasma Chung CW
1901 - 1906	Structural study of YSi1.7 layers formed by channeled ion beam synthesis Wu MF, Yao SD, Vantomme A, Hogg S, Pattyn H, Langouche G, Yang QQ, Wang QM
1907 - 1913	Implanted gallium ion concentrations of focused-ion-beam prepared cross sections Ishitani T, Koike H, Yaguchi T, Kamino T
1914 - 1918	Widely changing probability of surface damage creation induced by a single ion in the MeV ion energy range Ogiso H, Tokumoto H, Nakano S, Yamanaka K
1919 - 1927	Evidence of depth and lateral diffusion of defects during focused ion beam implantation Vieu C, Gierak J, Schneider M, Ben Assayag G, Marzin JY
1928 - 1932	On the improvement in thermal quenching of luminescence in SiGe/Si structures grown by molecular beam epitaxy Chen WM, Buyanova IA, Pozina G, Monemar B, Ni WX, Hansson GV
1933 - 1936	Changes in morphology using atomic hydrogen during Si/Si1-xGex molecular beam epitaxy growth on Si (100) Silvestre C, Jernigan GG, Twigg ME, Thompson PE
1937 - 1942	Stabilizing the surface morphology of Si1-x-yGexCy/Si heterostructures grown by molecular beam epitaxy through the use of a silicon-carbide source Croke ET, Vajo JJ, Hunter AT, Ahn CC, Chandrasekhar D, Laursen T, Smith DJ, Mayer JW
1943 - 1947	Low temperature scanning tunneling microscope-induced luminescence of GaN Evoy S, Harnett CK, Craighead HG, Eustis TJ, Davis WA, Murphy MJ, Schaff WJ, Eastman LF
1948 - 1952	High efficiency, dual collection made near-field scanning optical microscope Stranick SJ, Richter LJ, Cavanagh RR
1953 - 1957	Probing conducting particles buried in a Ni-x(SiO2)(1-x) composite by conducting atomic force microscopy Luo EZ, Wilson IH, Xu JB, Ma JX, Yan X
1958 - 1963	Microroughness of polymer thin films studied by total-reflection x-ray fluorescence and atomic force microscopy Wu WL, Wallace WE
1964 - 1970	Plasticity study of deformed materials by in situ atomic force microscopy Coupeau C, Girard JC, Grilhe J
1971 - 1982	Secondary ion mass spectrometry and atomic force spectroscopy studies of surface roughening, erosion rate change and depth resolution in Si during 1 keV 60 degrees O-2(+) bombardment with oxygen flooding Jiang ZX, Alkemade PFA
1983 - 1986	Novel approach to atomic force lithography Hu S, Altmeyer S, Hamidi A, Spangenberg B, Kurz H
1987 - 1991	Dry-etching development characteristics of Se75Ge25 resist for focused-ion-beam lithography Lee HY, Chung HB
1992 - 1997	Blurring effect analysis of an x-ray mask for synchrotron radiation lithography Kim IY, Kwak BM, Jeon YJ, Choi SS
1998 - 2005	Photoresist erosion studied in an inductively coupled plasma reactor employing CHF3 Doemling MF, Rueger NR, Oehrlein GS, Cook JM
2006 - 2012	Apparent tunnel barrier heights of Ptlr-Au interfaces in relation to the Au surface composition Boyer L, Noel S, Houze F
2013 - 2018	Structural and electrical properties of chemical vapor deposition tungsten overgrowth on physical vapor deposited and metalorganic chemical vapor deposited TiN adhesion layers Peng YC, Chen LJ, Hsieh WY, Yang YR, Hsieh YF
2019 - 2025	Characterization of TiN barriers against Cu diffusion by capacitance-voltage measurement Rha SK, Lee SY, Lee WJ, Hwang YS, Park CO, Kim DW, Lee YS, Whang CN
2026 - 2033	Thermal stability of selective chemical vapor deposited tungsten contact and effects of in situ N-2 plasma treatment Wang MT, Wang PC, Chuang MC, Chen LJ, Chen MC
2034 - 2037	Effects of sintering on Au/Ti/GaAs Schottky barrier submicron metal-semiconductor field-effect transistors characteristics Ahmed MM
2038 - 2048	Advanced emitters for next generation rf amplifiers Jensen KL, Yater JE, Zaidman EG, Kodis MA, Shih A
2049 - 2051	Field emission from nitrogen doped tetrahedral amorphous carbon prepared by filtered cathodic vacuum are technique Cheah LK, Shi X, Tay BK, Sun Z
2052 - 2056	Field emission of nitrogen-doped diamond films Han IT, Lee N, Lee SW, Kim SH, Jeon D
2057 - 2062	Field emission from ZrC and ZrC films on Mo field emitters Mackie WA, Xie TB, Matthews MR, Routh BP, Davis PR
2063 - 2072	Experimental evaluation of the extended Schottky model for ZrO/W electron emission Fransen MJ, Faber JS, van Rooy TL, Tiemeijer PC, Kruit P
2073 - 2078	Surface work function studies in porous silicon Bhave TM, Bhoraskar SV
2079 - 2081	Computer-controlled fabrication of ultra-sharp tungsten tips Kim YG, Choi EH, Kang SO, Cho G
2082 - 2085	Electrophysical characteristics and low-energy cathodoluminescence of vacuum fluorescent display and field emission display screens Bukesov SA, Nikishin NV, Dmitrienko AO, Shmakov SL, Kim JM
2086 - 2090	Resistivity effect of ZnGa2O4 : Mn phosphor screen on cathodoluminescence characteristics of field emission display Kim SS, Cho SH, Yoo JS, Jo SH, Lee JD
2091 - 2098	Critical role of degassing for hot aluminum filling Proost J, Kondoh E, Vereecke G, Heyns M, Maex K
2099 - 2101	Analysis of scanning force microscope force-distance data beyond the Hookian approximation Zypman FR, Eppell SJ
2102 - 2104	Microtrenching resulting from specular reflection during chlorine etching of silicon Hoekstra RJ, Kushner MJ, Sukharev V, Schoenborn P
2105 - 2109	Aligned pipe arrays formation by silicon anodic etching dos Santos MC, Teschke O
2110 - 2112	Side-by-side wafer bonding of InP for use with stepper-based lithography Ryan RW, Kopf RF, Tate A, Burm J, Hamm RA
2113 - 2114	Simple technique for measuring grating periods made using e-beam lithography Feder KS, Tennant DM
2115 - 2117	Electrical characteristics of Ta2O5 films on Si prepared by dc magnetron reactive sputtering and annealed rapidly in N2O Eftekhari G
2118 - 2120	Tungsten silicide and tungsten polycide anisotropic dry etch process for highly controlled dimensions and profiles Bashir R, Kabir AE, Hebert F, Bracken C
2121 - 2124	Perturbation solution for the interfacial oxidation of silicon Mhetar VR, Archer LA
2125 - 2126	Atomic force microscopy observation of the ferroelectric domain structure on the (010) cleavage surface of K2ZnCl4 Kim DY, Hong JW, Kwun SI, Jeong SY
2127 - 2129	In situ ultraviolet illumination of porous silicon during scanning tunneling microscopy Schwall D, Otter FA, Galligan JM
2133 - 2133	Papers from the 25th Annual Conference on the Physics ad Chemistry of Semiconductor Interfaces - Preface Rowe JE, Feenstra RM
2134 - 2153	What can electron paramagnetic resonance tell us about the Si/SiO2 system? Lenahan PM, Conley JF
2154 - 2158	Interface formation and thermal stability of advanced metal gate and ultrathin gate dielectric layers Claflin B, Lucovsky G
2159 - 2164	Formation of ultrathin oxynitride layers on Si(100) by low-temperature electron cyclotron resonance N2O plasma oxynitridation process Chakraborty S, Yoshida T, Hashizume T, Hasegawa H, Saki T
2165 - 2170	Surface roughness of SiO2 from a remote microwave plasma enhanced chemical vapor deposition process Rack MJ, Vasileska D, Ferry DK, Sidorov M
2171 - 2176	Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition Hinds BJ, Wang F, Wolfe DM, Hinkle CL, Lucovsky G
2177 - 2181	Cathodoluminescence measurements of suboxide band-tail and Si dangling bond states at ultrathin Si-SiO2 interfaces Young AP, Schafer J, Jessen GH, Bandhu R, Brillson LJ, Lucovsky G, Niimi H
2182 - 2187	Effects of interface roughness and conducting filaments in metal-oxide-semiconductor tunnel structures Ting DZY, McGill TC
2188 - 2190	Equilibrium shape of CoSi2 hut clusters on Si(100) Brongersma SH, Castell MR, Perovic DD, Zinke-Allmang M
2191 - 2198	Heterointerface dipoles : Applications to (a) Si-SiO2, (b) nitrided Si-N-SiO2, and (c) SiC-SiO2 interfaces Lucovsky G, Yang H, Massoud HZ
2199 - 2203	Multilayer oxidation of AlAs by thermal and electron beam induced decomposition of H2O in ultrahigh vacuum Yi SI, Mitchell WJ, Chung CH, Hu EL, Weinberg WH
2204 - 2214	Exciton localization in InGaN quantum well devices Chichibu S, Sota T, Wada K, Nakamura S
2215 - 2217	Dynamics of localized excitons in InGaN/GaN quantum wells Yu HB, Htoon H, deLozanne A, Shih CK, Grudowski PA, Dupuis RD, Zeng K, Mair R, Lin JY, Jiang HX
2218 - 2223	Investigation of the chemistry and electronic properties of metal gallium nitride interfaces Wu CI, Kahn A
2224 - 2228	Negative electron affinity of cesiated p-GaN(0001) surfaces Eyckeler M, Monch W, Kampen TU, Dimitrov R, Ambacher O, Stutzmann M
2229 - 2236	Nucleation and growth of GaN layers on GaAs, Si, and SiC substrates Ploog KH, Brandt O, Yang H, Yang B, Trampert A
2237 - 2241	Reflection high-energy electron diffraction studies of wurtzite GaN grown by molecular beam epitaxy Hughes OH, Korakakis D, Cheng TS, Blant AV, Jeffs NJ, Foxon CT
2242 - 2249	Reconstructions of GaN(0001) and (0001) surfaces : Ga-rich metallic structures Smith AR, Feenstra RM, Greve DW, Shin MS, Skowronski M, Neugebauer J, Northrup JE
2250 - 2253	Soft x-ray emission studies of the bulk electronic structure of AlN, GaN, and Al0.5Ga0.5N Smith KE, Duda LC, Stagarescu CB, Downes J, Korakakis D, Singh R, Moustakas TD, Guo JH, Nordgren J
2254 - 2260	Formation of an Sb-N compound during nitridation of InSb (001) substrates using atomic nitrogen Haworth L, Lu J, Hill P, Westwood DI, Macdonald JE, Hartmann N, Schneider A, Zahn DRT
2261 - 2266	Influence of growth conditions, inversion domains, and atomic hydrogen on growth of (0001) GaN by molecular beam epitaxy Myers TH, Hirsch LS, Romano LT, Richards-Babb MR
2267 - 2274	Epitaxial growth and properties of III-V magnetic semiconductor (GaMn)As and its heterostructures Tanaka M
2275 - 2279	Ferromagnetic resonance imaging of Co films using magnetic resonance force microscopy Suh BJ, Hammel PC, Zhang Z, Midzor MM, Roukes ML, Childress JR
2280 - 2285	In situ controlled reactions and phase formation of thin films on GaAs Caldwell DA, Chen LC, Bensaoula AH, Farrer JK, Carter CB, Palmstrom CJ
2286 - 2290	Metal/GaN Schottky barriers characterized by ballistic-electron-emission microscopy and spectroscopy Bell LD, Smith RP, McDermott BT, Gertner ER, Pittman R, Pierson RL, Sullivan GJ
2291 - 2295	Ballistic electron emission microscopy spectroscopy study of AlSb and InAs/AlSb superlattice barriers Cheng XC, McGill TC
2296 - 2301	Current oscillations in thin metal-oxide-semiconductor structures observed by ballistic electron emission microscopy Wen HJ, Ludeke R, Schenk A
2302 - 2307	Investigation of ultrathin SiO2 film thickness variations by ballistic electron emission microscopy Kaczer B, Im HJ, Pelz JP
2308 - 2312	Compliant substrate technology : Status and prospects Brown AS
2313 - 2316	Interface states induced in GaAs by growth interruption during an in situ process Wakaya F, Matsubara T, Nakayama M, Yanagisawa J, Yuba Y, Takaoka S, Murase K, Gamo K
2317 - 2323	Influence of sulfur interlayers on the Mg/CaAs(100) interface formation Hohenecker S, Kampen TU, Zahn DRT, Braun W
2324 - 2327	Direct imaging of the evolving Au/InSb(III) B interface Mishima T, Nakamura J, Tsukada K, Nishizawa M, Eguchi T, Osaka T
2328 - 2333	Microwave modulated photoluminescence used to measure surface recombination velocities Inglefield CE, DeLong MC, Taylor PC, Harrison WA
2334 - 2341	Native extended defects in Zn1-yGdySe/InxGa1-xAs heterostructures Muller B, Heun S, Lantier R, Rubini S, Paggel JJ, Sorba L, Bonanni A, Lazzarino M, Bonanni B, Franciosi A, Napolitani E, Romanato F, Drigo A, Bonard JM, Ganiere JD, Lazzarini L, Salviati G
2342 - 2349	In situ determination of in-plane strain anisotropy in ZnSe(001)/GaAs layers using reflectance difference spectroscopy Hingerl K, Yasuda T, Hanada T, Miwa S, Kimura K, Ohtake A, Yao T
2350 - 2354	Interpretation of reflectance anisotropy spectroscopy spectra of ZnSe(001) grown on GaAs(001) in terms of bulk, interface, and surface contributions Frisch AM, Schultz C, Herrmann T, Emiliani V, Wolfframm D, Evans DA, Korn M, Rossow U, Esser N, Richter W
2355 - 2357	Reflectance difference spectroscopy spectra of clean (3 x 2), (2 x 1), and c(2 x 2) 3C-SiC(001) surfaces : New evidence for surface state contributions to optical anisotropy spectra Rossow U, Lindner K, Lubbe M, Aspnes DE, Zahn DRT
2358 - 2366	Processes of quantum dot formation in the InAs on GaAs(001) system : A reflectance anisotropy spectroscopy study Westwood DI, Sobiesierski Z, Matthai CC, Steimetz E, Zettler T, Richter W
2367 - 2372	Photon-induced localization and final-state correlation effects in optically absorbing materials Aspnes DE, Mantese L, Bell KA, Rossow U
2373 - 2380	Reflection high-energy electron diffraction scanning tunneling microscopy study of InAs growth on the three low index orientations of GaAs : Two-dimensional versus three-dimensional growth and strain relaxation Joyce BA, Jones TS, Belk JG
2381 - 2386	Structure of InAs/AlSb/InAs resonant tunneling diode interfaces Nosho BZ, Weinberg WH, Zinck JJ, Shanabrook BV, Bennett BR, Whitman LJ
2387 - 2394	Scanning tunneling microscopy and x-ray photoelectron spectroscopy studies of atomic level structure and Fermi level pinning on GaAs(110) surfaces grown by molecular beam epitaxy Ishikawa Y, Tsurumi N, Fukui T, Hasegawa H
2395 - 2398	Atomic-scale compositional structure of InAsP/InP and InNAsP/InP heterostructures grown by molecular-beam epitaxy Zuo SL, Bi WG, Tu CW, Yu ET
2399 - 2403	Chemistry of [(t-butyl)GaS](4) on Si(100)-(2x1) Pelzel RI, Hopcus AB, Owen JHG, Nosho BZ, Weinberg WH
2404 - 2412	New model for reflection high-energy electron diffraction intensity oscillations Braun W, Daweritz L, Ploog KH
2413 - 2416	Anisotropic microstructure development during the reaction of Mg with GaAs Robey SW
2417 - 2420	Equilibrium critical thickness for strained-layer growth Khor KE, Sarma SD
2421 - 2425	Surface roughness, strain, and alloy segregation in lattice-matched heteroepitaxy Priester C, Grenet G
2426 - 2431	Chemical bonding features for faultily stacked interfaces of GaAs{111} Nakamura J, Mishima T, Masui MH, Sawayanagi M, Cho SP, Nishizawa M, Eguchi T, Osaka T
2438 - 2438	Microelectronics and nanometer structures - Processing, measurement, and phenomena - Preface Melngailis J, Gamo K, Orloff J
2439 - 2443	Material-wave nanotechnology : Nanofabrication using a de Broglie wave Matsui S, Fujita JI
2444 - 2448	Economic and technical case for ion projection lithography Berry IL
2449 - 2454	Microelectromechanical tunneling sensor fabrication and post-processing characterization using focused ion beams Stratton FP, Kubena RL, McNulty HH, Joyce RJ, Vajo J
2455 - 2461	Multipurpose nanobeam source with supertip emitter Kalbitzer S, Knoblauch A
2462 - 2468	Focused ion beam optical column design and consideration on minimum attainable beam size Sakaguchi K, Sekine T
2469 - 2472	Overlay accuracy tests for direct write implantation Mogren S, Barry IL
2473 - 2478	Development of ion and electron dual focused beam apparatus for high spatial resolution three-dimensional microanalysis of solid materials Cheng Z, Sakamoto T, Takahashi M, Kuramoto Y, Owari M, Nihei Y
2479 - 2483	Key technologies of a focused ion beam system for single ion implantation Matsukawa T, Shinada T, Fukai T, Ohdomari I
2484 - 2488	Development of wide range energy focused ion beam lithography system Kinokuni M, Sawaragi H, Mimura R, Aihara R, Forchel A
2489 - 2493	Current status of single ion implantation Shinada T, Kumura Y, Okabe J, Matsukawa T, Ohdomari I
2494 - 2498	Chemically and geometrically enhanced focused ion beam micromachining Russell PE, Stark TJ, Griffis DP, Phillips JR, Jarausch KF
2499 - 2505	Focused ion beam technology applied to microstructure fabrication Vasile MJ, Nassar R, Xie JS
2506 - 2510	Focused-ion-beam-assisted etching of diamond in XeF2 Taniguchi J, Ohno N, Takeda S, Miyamoto I, Komuro M
2511 - 2514	Focused ion beam etching of resist Ni multilayer films and applications to metal island structure formation Nakayama M, Wakaya F, Yanagisawa J, Gamo K
2515 - 2521	Focused ion beam direct deposition and its applications Nagamachi S, Ueda M, Ishikawa J
2522 - 2527	Transmission electron microscopy observation of thin foil specimens prepared by means of a focused ion beam Saka H
2528 - 2531	Dynamic Monte Carlo simulation for depth profiling by ion-sputter etching : Application to the AlAs/GaAs multilayered system Lee HI, Shimizu R
2532 - 2537	Proposals for exact point transmission electron microscopy using focused ion beam specimen preparation technique Ishitani T, Taniguchi Y, Isakozawa S, Koike H, Yaguchi T, Matsumoto H, Kamino T
2538 - 2542	GaAs microcrystal growth on semiconductor surfaces by low energy focused ion beam Chikyow T, Koguchi N
2543 - 2546	AlGaAs/GaAs heterostructures grown on a focused-Be-ion-beam written backgate Hirayama Y, Saku T
2547 - 2550	Formation of GaAs/AlGaAs constricted-channel field-effect transistor structures by focused Ga implantation and transport of electrons via focused ion beam induced localized states Kim H, Noda T, Sakaki H
2551 - 2554	Hopping conduction and localized states in p-Si wires formed by focused ion beam implantations Iwano H, Zaima S, Yasuda Y
2555 - 2561	End-point detection using focused ion beam-excited photoemissions in milling deep small holes in large scale integrated circuit structures Yamaguchi H, Saitoh K, Mizumura M
2562 - 2566	Focused ion beam implantation for opto- and microelectronic devices Konig H, Mais N, Hofling E, Reithmaier JP, Forchel A, Mussig H, Brugger H
2567 - 2569	Direct writing of active loads by focused ion beams Wiemann C, Versen M, Wieck AD
2570 - 2573	In situ scanning tunneling microscope studies of high-energy, focused ion implantation of Ga into GaAs : Direct observation of ion beam profiles Jones GAC, Rose PD, Brown S
2574 - 2577	Ion beam synthesis of cobalt disilicide using focused ion beam implantation Teichert J, Bischoff L, Hausmann S