Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.19, No.3 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (94 articles)

603 - 608	Enhanced diffusion as a mechanism for ion-induced damage propagation in GaN Haberer ED, Chen CH, Hansen M, Keller S, DenBaars SP, Mishra UK, Hu EL
609 - 614	Electrical properties of Pd-based ohmic contact to p-GaN Kim DW, Bae JC, Kim WJ, Baik HK, Lee SM
615 - 621	Surface states on n-type Al0.24Ga0.76As characterized by deep-level transient spectroscopy Choi KJ, Lee JL
622 - 627	Raman study of luminescent spark processed porous GaAs Rojas-Lopez M, Gracia-Jimenez JM, Vidal MA, Navarro-Contreras H, Silva-Gonzalez R, Gomez E
628 - 633	Technique employing gold nanospheres to study defect evolution in thin films Mirkarimi PB, Baker SL, Stearns DG
634 - 644	Molecular dynamics study of the interactions of small thermal and energetic silicon clusters with crystalline and amorphous silicon surfaces Ramalingam S, Aydil ES, Maroudas D
645 - 648	Study on dark specific resistance of Au-TiO2 nanogranular films Wang HY, Xu P, Wang TM
649 - 658	Formation of Si-Si bonds and precipitation of Si nanocrystals in vacuum-ultraviolet-irradiated a-SiO2 films Akazawa H
659 - 665	Field-based scanning tunneling microscope manipulation of antimony dimers on Si(001) Rogge S, Timmerman RH, Scholte PMLO, Geerligs LJ, Salemink HWM
666 - 670	Nanowearing property of a fatigued polycarbonate surface studied by atomic force microscopy Iwata F, Suzuki Y, Moriki Y, Koike S, Sasaki A
671 - 674	Growth and structure of aligned B-C-N nanotubes Yu J, Zhang Q, Ahn J, Yoon SF, Rusli, Gan B, Chew K, Tan KH, Bai XD, Wang EG
675 - 682	Scanning field-emission force microscopy and spectroscopy of chemical-vapor-deposited carbon field-emission cathodes Inoue T, Ogletree DF, Salmeron M
683 - 686	Triple-junction issues in field emission displays Ma XY, Sudarshan TS
687 - 691	Effects of post-treatment of MgO on the discharge characteristics of an alternating current plasma display panel Kim JK, Moon KS, Whang KW, Lee JH
692 - 694	Selective ultrahigh vacuum dry etching process far ZnSe-based II-VI semiconductors Legge M, Bacher G, Bader S, Kummell T, Forchel A, Nurnberger J, Schumacher C, Faschinger W, Landwehr G
695 - 700	Time-dependent Si etch behavior and its effect on oxide/Si selectivity in CF4+D-2 electron cyclotron resonance plasma etching Min K, Lamb HH, Hauser JR
701 - 710	Level set approach to simulation of feature profile evolution in a high-density plasma-etching system Im YH, Hahn YB, Pearton SJ
711 - 721	Plasma etch profiles of passivated open-area trenches Abraham-Shrauner B
722 - 724	Formation of metallic surface structures by ion etching using a S-layer template Panhorst M, Bruckl H, Kiefer B, Reiss G, Santarius U, Guckenberger R
725 - 731	Effects of gas pressure and substrate temperature on the etching of parylene-N using a remote microwave oxygen plasma Callahan RRA, Raupp GB, Beaudoin SP
732 - 735	Exposure characteristics and three-dimensional profiling of SU8C resist using electron beam lithography Wong WH, Pun EYB
736 - 742	Photoinduced outgassing from the resist for extreme ultraviolet lithography by the analysis of mass spectroscopy Watanabe T, Kinoshita H, Nii H, Hamamoto K, Tsubakino H, Hada H, Komano H, Irie S
743 - 748	Resist hardening by fluorocarbon plasma for electron-beam and optical mix-and-match lithography Chan VWC, Hai CH, Chan PCH
749 - 754	Ion channeling effects on the focused ion beam milling of Cu Kempshall BW, Schwarz SM, Prenitzer BI, Giannuzzi LA, Irwin RB, Stevie FA
755 - 758	Preparation of site specific transmission electron microscopy plan-view specimens using a focused ion beam system Langford RM, Huang YZ, Lozano-Perez S, Titchmarsh JM
759 - 761	Selective chemical vapor deposition of copper on AZ 5214 (TM)-patterned silicon substrates Davazoglou D, Vidal S, Gleizes A
762 - 766	Recrystallization effects in Cu electrodeposits used in fine line damascene structures Jiang QT, Thomas ME
767 - 773	Investigations of effects of bias polarization and chemical parameters on morphology and filling capability of 130 nm damascene electroplated copper Chang SC, Shieh JM, Lin KC, Dai BT, Wang TC, Chen CF, Feng MS, Li YH, Lu CP
774 - 779	Integration and electrical characterization of photosensitive polyimide Alford TL, Zou YL, Gadre KS, King C, Chen W, Theodore DN
780 - 787	Characteristics of fluorinated amorphous carbon films and implementation of 0.15 mu m Cu/a-C : F damascene interconnection Shieh JM, Suen SC, Tsai KC, Dai BT, Wu YC, Wu YH
788 - 793	Effect of thinning a WSiN/WSIx barrier layer on its barrier capability Hirata A, Maeda T, Machida K, Maeda M, Yasui K, Kyuragi H
794 - 799	Electric property improvement and boron penetration suppression in metal-oxidase-Si capacitors by amorphous-Si gate electrode and two-step nitridation Lee JH, Feng WS, Juang TC, Chang-Liao KS
800 - 806	Nitrided thermal SiO2 for use as top and bottom gate insulators in self-aligned double gate silicon-on-insulator metal-oxide-semiconductor field effect transistor Ahmed SS, Denton JP, Neudeck GW
807 - 811	Mechanically controllable break junctions with quasi-planar electrodes Kolesnychenko OY, Jurdik E, Shklyarevskii OI, van Kempen H
812 - 817	Integration of piezoelectric (Pb, La)TiO3 on (100)InP by using a CeO2 buffer layer Vasco E, Vazquez L, Zaldo C, Coya C, Kling A, Soares JC
818 - 824	Quantitative analysis of the bit size dependence on the pulse width and pulse voltage in ferroelectric memory devices using atomic force microscopy Woo J, Hong S, Setter N, Shin H, Jeon JU, Pak YE, No K
825 - 828	Gas sensing properties of copper gate metal-oxide-semiconductor capacitors Filippini D, Aragon R, Weimar U
829 - 835	Effects of oxygen flooding on crater bottom composition and roughness in ultrashallow secondary ion mass spectrometry depth profiling Ng CM, Wee ATS, Huan CHA, See A
836 - 842	Secondary-ion-mass spectrometry and high-resolution x-ray diffraction analyses of GaSb-AlGaSb heterostructures grown by molecular beam epitaxy Gerardi C, Giannini C, De Caro L, Tapfer L, Rouillard Y, Jenichen B, Daweritz L, Ploog KH
843 - 850	Influence of the microchannel plate and anode gap parameters on the spatial resolution of an image intensifier Hoenderken TH, Hagen CW, Earth JE, Kruit P, Nutzel GO
851 - 855	Incorporation of polyhedral oligosilsesquioxane in chemically amplified resists to improve their reactive ion etching resistance Wu HP, Hu YQ, Gonsalves KE, Yacaman MJ
856 - 858	Effect of the Ti-underlayer microstructure on the texture of Al thin films Yoo S, Kim YH, Yoon CS
861 - 861	Papers from the 13th International Vacuum Microelectronics Conference - 13-17 August 2000 Guangzhou, China - Preface Xu NS
862 - 865	Use of microfabricated cold field emitters in sub-100 nm maskless lithography Gu GX, Tokunaga K, Yin E, Tsai FC, Brodie AD, Parker NW
866 - 869	Secondary electron omission characteristics for sol-gel based SiO2 thin films Jeong T, Lee J, Yu S, Jin S, Heo J, Yi W, Jeon D, Kim JM
870 - 873	Improved performance of nonevaporable getter activated by a continuous wave infrared laser Cha SN, Choung JY, Song BG, Choi JM, Han IT, Park NS, Jung JE, Lee NS, Kim JM, Chee JK
874 - 876	Pressure change characteristics of a field emission display panel in operation Oh JY, Wo KJ, Kim KS, Lee DY, Choi JO
877 - 883	Review of synthesis of low-work function Cu-Li alloy coatings and characterization of the field emission properties for application to field emission devices Auciello O, Tucek JC, Krauss AR, Gruen DM, Moldovan N, Mancini DC
884 - 887	Electron field emission characteristics of textured silicon surface Fung YM, Cheung WY, Wilson IH, Chen DH, Xu JB, Wong SP, Kwok RWM
888 - 891	Effects of color phosphors on the lifetime of field emission carbon thin films Thuesen LH
892 - 896	Focusing properties of dual-gate field emitters Nicolaescu D, Filip V, Itoh J
897 - 899	Mold-type field-emission array fabrication by the use of fast silicon etching Dziuban J, Gorecka-Drzazga A
900 - 903	100 nm gate hole openings for low voltage driving field emission display applications Choi JO, Akinwande AI, Smith HI
904 - 906	Wedge emitter fabrication using focused ion beam Ochiai C, Sawada A, Noriyasu H, Takai M, Hosono A, Okuda S
907 - 911	Performance improvement of gated silicon field emitters with a thin layer of boron nitride Busta H, Furst D, Pryor R, Li LH
912 - 915	Emission characteristics of Spindt-type platinum field emitters improved by operation in carbon monoxide ambient Gotoh Y, Nozaki D, Tsuji H, Ishikawa J, Nakatani T, Sakashita T, Betsui K
916 - 919	Fabrication and electrical characterization of high aspect ratio silicon field emitter arrays Rangelow IW, Biehl S
920 - 924	Damageless vacuum sealing of Si field emitters with CHF3 plasma treatment Nagao M, Matsukawa T, Kanemaru S, Itoh J, Tanabe H
925 - 928	Novel method for the formation of an aluminum parting layer in the fabrication of field emitter arrays Kang SY, Jung MY, Hwang CS, Cho YR, Song YH, Lee SK, Lee JH, Cho KI
929 - 932	Novel resistive layer structure using via holes of an insulating interdielectric as a current path Ha JK, Chung BH, Han SY, Choi JO, Kim HG
933 - 935	Fabrication process of field emitter arrays using focused ion and electron beam induced reaction Ochiai C, Yavas O, Takai M, Hosono A, Okuda S
936 - 941	Recent development of diamond microtip field emitter cathodes and devices Kang WP, Davidson JL, Wisitsora-at A, Kerns DV, Kerns S
942 - 945	Microscopic field emission investigation of nanodiamond and AIN coated Si tips Gunther B, Gohl A, Muller G, Givargizov E, Zadorozhnaya L, Stepanova A, Spitsyn B, Blaut-Bachev AN, Seleznev B, Suetin N
946 - 949	Field electron emission from patterned nanostructured carbon films on sodalime glass substrates Park KH, Lee KM, Choi S, Lee S, Koh KH
950 - 953	Field emission from heat-treated cobalt-containing amorphous carbon composite films on glass substrate Li YJ, Tau SP, Tay BK, Sun Z, Chen GY, Chen JS, Ding XZ
954 - 957	Fabrication of triode diamond field emitter arrays era glass substrate by anisotropic conductive film bonding Lee JD, Cho ES, Kwon SJ
958 - 961	Stable and uniform electron emission from nanostructured carbon films Park KH, Choi S, Lee KM, Lee S, Koh KH
962 - 964	Electron emission from nanocrystalline diamond films Gu CZ, Jiang X, Jin ZS, Wang WB
965 - 970	Low-field electron emission of diamond/pyrocarbon composites Karabutov AV, Frolov VD, Konov VI, Ralchenko VG, Gordeev SK, Belobrov PI
971 - 974	Diamond emitter arrays with uniform self-aligned gate built from silicon-on-insulator wafer Wisitsora-at A, Kang WP, Davidson JL, Kerns DV, Kerns SE
975 - 979	Electron field emission properties of nanodiamonds synthesized by the chemical vapor deposition process Yu YC, Huang JH, Lin IN
980 - 987	Field emission current cleaning and annealing of microfabricated cold cathodes Schwoebel PR, Spindt CA, Holland CE, Panitz JA
988 - 991	Field emitters for space application Huq SE, Kent BJ, Stevens R, Lawes RA, Xu NS, She JC
992 - 994	Relationship between work function and current fluctuation of field emitters: Use of SK chart dor evaluation of work function Gotoh Y, Tsuji H, Ishikawa J
995 - 998	Analytic expression of the average energy of the field electrons from the n-type semiconductors Chung MS, Yoon BG, Seo HS, Cutler PH, Miskovsky NM
999 - 1003	Effects of the field emission display panel sealing process on the cathodoluminescence properties of phosphor screen Park ZM, Jeon DY, Jin YW, Cha SN, Kim JM
1004 - 1007	ZnO : Zn phosphor thin films prepared by filtered arc deposition Li W, Mao DS, Zhang FM, Wang X, Liu XH, Zou SC, Zhu YK, Li Q, Xu JF
1008 - 1011	Luminescence characteristics of green phosphors with dwell times for field emission display design Jang JE, Kim JW, Lee SJ, Kwon NH, Jin YW, Park SH, Jung JE, Lee NS, Kim JM
1012 - 1015	Patterning technology of carbon nanotubes for field emission displays Cho YR, Lee JH, Song YH, Kang SY, Jung MY, Hwang CS, Cho KI
1016 - 1022	Modeling of the electron field emission from carbon nanotubes Filip V, Nicolaescu D, Okuyama F
1023 - 1025	Numerical indicator field emission display using carbon nanotubes as emitters Kwo JL, Yokoyama M, Lee CC, Chuang FY, Lin IN
1026 - 1029	Effect of catalyst on growth behavior of carbon nanotube synthesizing by microwave heating thermal chemical vapor deposition process Chen SC, Shih LY, Chang YC, Tu GC, Lin IN
1030 - 1033	Microwave-assisted chemical vapor deposition process for synthesizing carbon nanotubes Kuo TF, Juang ZY, Tsai CH, Tsau YM, Cheng HF, Lin IN
1034 - 1039	Electron field emission properties of pulsed laser deposited carbon films containing carbon nanotubes Chiang MR, Liu KS, Lai TS, Tsai CH, Cheng HF, Lin IN
1040 - 1043	Characteristics of carbon nanowires synthesized by local arc-discharging technique Kwo JL, Yokoyama M, Lin IN
1044 - 1050	Recent progress in the characterization of electron emission from solid-state field-controlled emitters Binh VT, Semet V, Dupin JP, Guillot D
1051 - 1054	Field emission characteristics of boron nitride films deposited on Si substrates with cubic boron nitride crystal grains Kimura C, Yamamoto T, Sugino T
1055 - 1058	Field activated lateral-type polysilicon emitter with extremely high emission current and very low turn-on voltage Lee JH, Lee MB, Hahm SH, Choi HC, Lee JH, Lee JH, Kim JS, Choi KM, Choi CA
1059 - 1063	Theoretical study of the threshold field for field electron emission from amorphous diamond thin films Xu NS, She JC, Huq SE, Deng SZ, Chen J
1064 - 1072	Robust high current field emitter tips and arrays for vacuum microelectronics devices Charbonnier FM, Mackie WA, Hartman RL, Xie TB
1073 - 1076	Electron emission from silicon tips coated with sol-gel (Ba0.67Sr0.33)TiO3 ferroelectric thin film Kang WP, Wisitsora-at A, Davidson JL, Tan OK, Zhu WG, Li Q, Xu JF
1077 - 1081	Simulation of planar deflection systems for field emission devices Cui Z
1082 - 1084	Pulsed laser deposition of zinc oxide luminescent thin films Wei J, Zhang BL, Yao N, Wang XP, Ma HZ, Wang SM
1085 - 1086	Heterojunction based on polyacetylene and its photocurrent density Liu PY, Ye H