Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.27, No.2 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (90 articles)

L1 - L3	High-aspect-ratio germanium zone plates fabricated by reactive ion etching in chlorine Lindblom M, Reinspach J, von Hofsten O, Bertilson M, Hertz HM, Holmberg A
557 - 561	Thermionic electron emission from chemical vapor deposition diamond by nanosecond laser heating Choi BK, Kang WP, Davis IL, Davidson JL, Hu ST, Pitz RW
562 - 567	Electron emission from ultralarge area metal-oxide-semiconductor electron emitters Thomsen LB, Nielsen G, Vendelbo SB, Johansson M, Hansen O, Chorkendorff I
568 - 572	Fabrication of annular photonic crystals by atomic layer deposition and sacrificial etching Feng JB, Chen Y, Blair J, Kurt H, Hao R, Citrin DS, Summers CJ, Zhou ZP
573 - 580	Step and flash imprint lithography for manufacturing patterned media Schmid GM, Miller M, Brooks C, Khusnatdinov N, LaBrake D, Resnick DJ, Sreenivasan SV, Gauzner G, Lee K, Kuo D, Weller D, Yang XM
581 - 584	Improved etch resistance of ZEP 520A in reactive ion etching through heat and ultraviolet light treatment Czaplewski DA, Tallant DR, Patrizi GA, Wendt JR, Montoya B
585 - 589	Dependence of fiber texture on composition in metal-insulator Au-SiO2 composite thin films Filoti DI, Brown AM, Carlson D, Harper JME
590 - 596	Impact of slip and contact angle on imprinting pressure in nanoimprint lithography Lee YH, Sin HC, Kim NW
597 - 600	Amorphization of Si using cluster ions Romano L, Jones KS, Sekar K, Krull WA
601 - 605	Improved performance of pentacene field-effect transistors using a nanocomposite gate dielectric Lee WH, Wang CC, Ho JC
606 - 611	AlGaAs/GaAs high-electron mobility transistor with In0.1Ga0.9As/In0.22Ga0.78As/In0.1Ga0.9As channel grown by metal-organic chemical vapor deposition Lin YS, Chen BY
612 - 617	Indium oxides by reactive ion beam assisted evaporation: From material study to device application Wang K, Vygranenko Y, Chaji R, Nathan A
618 - 621	Enhanced ultraviolet electroluminescence from p-Si/n-ZnO nanorod array heterojunction Sun MH, Zhang QF, Sun H, Zhang JY, Wu JL
622 - 625	Transfer characteristics and bias-stress stability of amorphous indium zinc oxide thin-film transistors Choi JH, Bin Han U, Lee KC, Lee JH, Kim JJ, Cho IT, Lee JH, Heo YW
626 - 630	Double layer-coated carbon nanotubes: Field emission and secondary-electron emission properties under presence of intense electric field Lee J, Park J, Sim K, Yi W
631 - 636	Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications Greenslit D, Chakraborty T, Eisenbraun E
637 - 648	Passivation of GaAs by octadecanethiol self-assembled monolayers deposited from liquid and vapor phases Budz HA, Biesinger MC, LaPierre RR
649 - 653	Reduction effect of line edge roughness on time-dependent dielectric breakdown lifetime of Cu/low-k interconnects by using CF3I etching Soda E, Oda N, Ito S, Kondo S, Saito S, Samukawa S
654 - 664	Quantification of outgassing of C-, Si-, and S-containing products during exposure of photoresists Houle FA, Maxim N, Huijbregtse J, Deline VR, Truong H, van Schaik W
665 - 670	Do not always blame the photons: Relationships between deprotection blur, line-edge roughness, and shot noise in extreme ultraviolet photoresists Anderson CN, Naulleau PP
671 - 676	Deposition of tungsten oxynitride nanowires through simple evaporation and subsequent annealing Jeon S, Kim H, Yong K
677 - 680	Mesa sample preparation for secondary ion mass spectrometry depth profiling using an automated dicing saw Guenther T, Jiang ZX, Kim K, Sieloff DD
681 - 683	Dry etching of GaAs in high pressure, capacitively coupled BCl3/N-2 plasmas Lee JW, Kim JK, Lee JH, Joo YW, Park YH, Noh HS, Pearton SJ
686 - 686	Papers from the 21st International Vacuum Nanoelectronics Conference PREFACE Dziuban JA
687 - 691	Investigation of the 100 GHz reentrant linear magnetron using particle-in-cell simulation Kim JI, Jeon SG, Jin YS, Kim GJ, Kim DH, Jung SS
692 - 697	Theoretical analysis of the energy exchange and cooling in field emission from the conduction band of the n-type semiconductor Chung MS, Jang YJ, Mayer A, Weiss BL, Miskovsky NM, Cutler PH
698 - 700	Studies of W(100) modified by praseodymium oxide by using x-ray photoelectron spectroscopy, low-energy electron diffraction, and photoelectron emission microscopy Kawakubo T, Nakano Y, Nakane H
701 - 704	Emission and focusing characteristics of volcano-structured double-gated field emitter arrays Neo Y, Takeda M, Soda T, Nagao M, Yoshida T, Kanemaru S, Sakai T, Hagiwara K, Saito N, Aoki T, Mimura H
705 - 710	Field emission microscopy study of zinc oxide nanowires on tungsten tip Zhang XX, Zhang GM, Bai X, Zhao XY, Xiao J, Wu Y, Lu FY, Guo DZ
711 - 718	Background analysis of field-induced electron emission from nanometer-scale heterostructured emitters Filip V, Nicolaescu D, Fulga IC, Mitran T, Wong H
719 - 720	Work function of W(100) field emitter modified with lutetium oxide and measured with photoemission electron microscope Nakane H, Nakano Y, Kawakubo T
721 - 724	Superposition of fringelike-electron-emission pattern from radical-oxygen-gas exposed Pt field emitter fabricated by electron-beam-induced deposition Murakami K, Nishihara S, Matsubara N, Ichikawa S, Wakaya F, Takai M
725 - 728	CdTe x-ray image sensor using a field emitter array Nakagawa M, Hanawa Y, Sakata T, Morii H, Nagao M, Yoshida T, Kanemaru S, Neo Y, Aoki T, Mimura H
729 - 734	Simple fabrication of a gated field-electron emitter with a vertical thin film formed by ion-beam irradiation Yoshida T, Nagao M, Baba A, Asano T, Kanemaru S
735 - 739	Enhanced output current density of an active-matrix high-efficiency electron emission device array with 13.75 mu m pixels Nakada T, Sato T, Matsuba Y, Tanaka R, Sakemura K, Negishi N, Okuda Y, Watanabe A, Yoshikawa T, Ogasawara K, Nanba M, Tanioka K, Egami N, Koshida N
740 - 743	Design and fabrication of an ultrahigh-luminance field-emission display Nagao M, Yoshida T, Yasumuro C, Nakamura K, Marushima Y, Taniguchi M, Itoh S, Kanemaru S
744 - 748	Stable electron emission from BCN/carbon nanotube field emitter Kimura C, Kawai S, Takizawa K, Horikawa Y, Aoki H, Sugino T
749 - 752	Comparison of field-electron emission from different carbon nanotube array structures Hong NT, Koh KH, Lee S, Phan NM, Ngo TTT, Phan HK
753 - 756	Field-electron emission from flexible carbon nanotube array cathodes Hong NT, Yong KS, Koh KH, Lee S, Ngo TTT, Phan NM, Phan HK
757 - 760	Field-emission light sources utilizing carbon nanotubes and composite phosphor made of SiO2 nanospheres covered with Y2O3: Eu Cichy B, Gorecka-Drzazga A, Dziuban JA
761 - 765	Effect of aging on field emission lifetime for carbon nanotube cathodes Oki H, Kinoshita A, Takikawa T, Kim WS, Murakami K, Abo S, Wakaya F, Takai M
766 - 771	Field emission pattern of carbon nanotubes and phase distribution of wave function in the end cap structure Peng J, Edgcombe CJ
772 - 774	Vacuum-ultraviolet light emission from xenon directly excited by ballistic output electrons of nanocrystalline silicon planar cathode Ichihara T, Hatai T, Koshida N
775 - 777	Field enhanced surface treatment of needle-shaped TiO2 cathode for improvement in field emission Fukuyama C, Murakami K, Abo S, Wakaya F, Takai M, Takimoto T, Kumashiro Y, Takaoka Y
784 - 784	2008 INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY PREFACE Stroscio JA, Whitman LJ
785 - 788	Visualization of bias-dependent potential barriers using scanning gate microscopy in copper-phthalocyanine field-effect transistor Aoki N, Sudou K, Matsusaki K, Ochiai Y
789 - 794	Nanoscale current transport through Schottky contacts on wide bandgap semiconductors Giannazzo F, Roccaforte F, Iucolano F, Raineri V, Ruffino F, Grimaldi MG
795 - 798	Formation of single electron transistors in single-walled carbon nanotubes with low energy Ar ion irradiation technique Mori T, Sato S, Omura K, Yajima S, Tsuruoka Y, Achiba Y, Ishibashi K
799 - 804	Adsorption and conformation of porphyrins on metallic surfaces Brede J, Linares M, Lensen R, Rowan AE, Funk M, Broring M, Hoffmann G, Wiesendanger R
805 - 809	Control of channel resistance on metal nanowires by electromigration patterning method Takahashi K, Tomoda Y, Itami S, Shirakashi J
810 - 812	First-principles calculation of electron transport in Si atom wire Kusaka H, Kobayashi N
813 - 816	Fabrication of nanogap electrodes by field-emission-induced electromigration Tomoda Y, Takahashi K, Hanada M, Kume W, Shirakashi J
817 - 820	Molecular conductance switching via controlled alteration of electron delocalization: Quinone-modified oligo(phenylenevinylene) Tsoi S, Griva I, Trammell SA, Blum AS, Schnur JM, Lebedev N
821 - 826	Toward surround gates on vertical single-walled carbon nanotube devices Franklin AD, Sayer RA, Sands TD, Fisher TS, Janes DB
827 - 830	Strain distributions in lattice-mismatched semiconductor core-shell nanowires Sondergaard N, He YH, Fan C, Han RQ, Guhr T, Xu HQ
831 - 835	Self-assembled organic nanowires: A structural and electronic study Simmonds H, Bennett N, Elliott M, Macdonald E
836 - 838	Photoluminescence of bioconjugated core-shell CdSe/ZnS quantum dots Torchynska TV, Douda J, Calva PA, Ostapenko SS, Sierra RP
839 - 841	Visualizing the surface structure of immunochromatography test strips using dynamic force microscopy Yarkov SP, Shilenko IV, Valiev HH, Karnet YN, Kovalev GN, Snegireva NS, Yanovsky YG, Bogdanov EV
842 - 848	pH-dependent conductance behaviors of layer-by-layer self-assembled carboxylated carbon nanotube multilayer thin-film sensors Lee D, Cui TH
849 - 853	X-ray diffraction and electron paramagnetic resonance study of porous 6H-SiC Torchynska TV, Bratus V, Gomez JP
854 - 857	Diameter dependence of the interactions between single-walled carbon nanotubes and Ti(0001) surface David MY, Kasai K, Nakanishi H, Kasai H
858 - 862	Soft processing for formation of self-assembled monolayer on hydrogen-terminated silicon surface based on visible-light excitation Sano H, Yaku T, Ichii T, Murase K, Sugimura H
863 - 867	Ordered structures of pentacene on Cu(110) Martinez-Blanco J, Ruiz-Oses M, Joco V, Sayago DI, Segovia P, Michel EG
868 - 873	Dielectric thickness dependence of capacitive behavior in graphene deposited on silicon dioxide Sonde S, Giannazzo F, Raineri V, Rimini E
874 - 881	Nanostructure fabrication on an Al surface by chemical and electrochemical multiprocess and nanoscale molecular patterning on the nanostructured Al surface Watanabe Y, Kato H, Takemura S, Kusama S, Limura G, Sugiyama T, Hiramatsu T, Nanba N, Nishikawa O, Taniguchi M
882 - 886	Quantum electron transport through carbon nanotubes with electron-phonon coupling Ishii H, Kobayashi N, Hirose K
887 - 890	Tunneling spectroscopy of ultrathin insulating Cu2N films, and single Co adatoms Choi T, Ruggiero CD, Gupta JA
891 - 894	Low temperature scanning tunneling microscopy wave-function imaging of InAs/GaAs cleaved quantum dots with similar height Girard JC, Lemaitre A, Miard A, David C, Wang ZZ
895 - 902	Spectroscopic scanning tunnel microscopy of Cl-Si(111)7 x 7: Determination of Cl-Si sigma* resonance line shape Liu WM, Horn S, Maraghechi P, Patitsas SN
903 - 911	Topography and surface potential in Kelvin force microscopy of perfluoroalkyl alkanes self-assemblies Alexander J, Magonov S, Moeller M
912 - 918	X-ray investigation of buried SiGe islands for devices with strain-enhanced mobility Hrauda N, Zhang JJ, Stangl J, Rehman-Khan A, Bauer G, Stoffel M, Schmidt OG, Jovanovich V, Nanver LK
919 - 922	Photoluminescence variation in dot-in-a-well structures with different InAs quantum dot densities Torchynska TV, Lozada EV, Espinola JLC
923 - 927	Fabrication of metallic nanoporous films by dealloying Yeh WJ, Chava S
928 - 933	Scanning probe anodization patterning of Si substrates covered with a self-assembled monolayer dependent on surface hydrophilicity Han J, Kasahara D, Ichii T, Murase K, Sugimura H
934 - 938	Direct-to-indirect transition observed in quantum dot photoluminescence with nanoprobe indentation Ozasa K, Maeda M, Hara M, Kakoi H, Xu LX, Liang YH, Arai Y
939 - 943	Incorporation of DNA networks into microelectrode structures Erler C, Mertig M
944 - 947	Scanning probe microscopy investigation of nanostructured surfaces induced by swift heavy ions Akcoltekin S, Akcoltekin E, Schleberger M, Lebius H
948 - 952	Improvement of scanning probe microscopy local oxidation nanolithography Nishimura S, Toyofuku T, Miyashita K, Takemura Y, Shirakashi J
953 - 957	Nanoscale patterning of NiFe surface by scanning probe microscopy scratch nanolithography Miyashita K, Nishimura S, Toyofuku T, Shirakashi JI
958 - 963	Flexural-torsional resonance mode of a chip cantilever system: Applications to nanomachining Voigt F, Krohs F, Gerbach R
964 - 968	Photothermal excitation of a single-crystalline silicon cantilever for higher vibration modes in liquid Nishida S, Kobayashi D, Kawakatsu H, Nishimori Y
969 - 974	Frequency dependent Kelvin probe force microscopy on silicon surfaces Muller F, Muller AD
975 - 979	Wafer-scale production of carbon nanofiber probes Kitazawa M, Ohta R, Sugita Y, Inaba K, Tanemura M
980 - 983	Application of ion-induced carbon nanocomposite fibers to magnetic force microscope probes Sugita Y, Kitazawa M, Yusop MZM, Tanemura M, Hayashi Y, Ohta R
984 - 992	Parametrization of atomic force microscopy tip shape models for quantitative nanomechanical measurements Belikov S, Erina N, Huang L, Su CM, Prater C, Magonov S, Ginzburg V, McIntyre B, Lakrout H, Meyers G
993 - 996	Calculation of plasmon enhanced molecular fluorescence in scanning tunnel microscopy using effective medium model for molecules on metal substrate Nishitani R, Liu HW, Iwasaki H
997 - 1000	Strain imaging of a magnetic layer formed on an air bearing surface of a hard disk drive head for perpendicular recording Takata K
1001 - 1005	Noncontact lateral-force gradient measurement on Si(111)-7 x 7 surface with small-amplitude off-resonance atomic force microscopy Atabak M, Unverdi O, Ozer HO, Oral A
1006 - 1010	Imaging capability of pseudomorphic high electron mobility transistors, AlGaN/GaN, and Si micro-Hall probes for scanning Hall probe microscopy between 25 and 125 degrees C Akram R, Dede M, Oral A
1011 - 1013	Single ferroelectric domain nucleation and growth monitored by high speed piezoforce microscopy Polomoff NA, Nath R, Bosse JL, Huey BD