Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.21, No.2 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (51 articles)

633 - 640	Design of a shallow thermally stable ohmic contact to p-type InGaSb Wang SH, Mohney SE, Hull BA, Bennett BR
641 - 644	Effects of KrF (248 nm) excimer laser irradiation on electrical and optical properties of GaN : Mg Kim DJ, Kim HM, Han MG, Moon YT, Lee S, Park SJ
645 - 654	Characterization of vapor deposited poly (ethylene glycol) films on silicon surfaces for surface modification of microfluidic systems Popat KC, Johnson RW, Desai TA
655 - 659	Modeling the impact of photoresist trim etch process on photoresist surface roughness Rauf S, Stout PJ, Cobb J
660 - 663	Large area direct nanoimprinting of SiO2-TiO2 gel gratings for optical applications Li MT, Tan H, Chen L, Wang J, Chou SY
664 - 669	Silicon nanowire with programmable conductivity analyzed by scanning Maxwell-stress microscopy Matsukawa T, Kanemaru S, Masahara M, Nagao M, Tanoue H, Itoh J
670 - 676	Properties of ZnO-doped Zr0.8Sn0.2TiO4 thin films by rf sputtering Huang CL, Hsu CS
677 - 682	Stability improvement of deuterated amorphous silicon thin-film transistors characterized by modified Schottky-contact gated-four-probe method Liu SD, Shih A, Chen SD, Lee SC
683 - 687	Cell behavior on lithographically defined nanostructured substrates Teixeira AI, Abrams GA, Murphy CJ, Nealey PF
688 - 692	Room-temperature nanoimprint and nanotransfer printing using hydrogen silsequioxane Matsui S, Igaku Y, Ishigaki H, Fujita J, Ishida M, Ochiai Y, Namatsu H, Komuro M
693 - 697	Fabrication and electrical characteristics of carbon nanotube-based microcathodes for use in a parallel electron-beam lithography system Teo KBK, Chhowalla M, Amaratunga GAJ, Milne WI, Legagneux P, Pirio G, Gangloff L, Pribat D, Semet V, Binh VT, Bruenger WH, Eichholz J, Hanssen H, Friedrich D, Lee SB, Hasko DG, Ahmed H
698 - 705	Correlation between current-voltage characteristics and dislocations evaluated with submicrometer Schottky contacts on n-GaN grown by metalorganic chemical vapor deposition Shiojima K, Suemitsu T
706 - 709	Multiple-pulse laser annealing of preamorphized silicon for ultrashallow boron junction formation Poon CH, Cho BJ, Lu YF, Bhat M, See A
710 - 713	Electron transport in a submicron-scale AlGaAs/GaAs field-effect transistor with InAs nanodots as the floating gate Koike K, Sasa S, Inoue M, Yano M
714 - 718	Quantitative method of image analysis when drift is present in a scanning probe microscope Huerth SH, Hallen HD
719 - 728	Fabrication and characterization of silicon nanocrystals by thermal oxidation of a-Si : H films in air Kohli S, Theil JA, Snyder RD, Rithner CD, Dorhout PK
729 - 736	Carrier spilling revisited: On-bevel junction behavior of different electrical depth profiling techniques Clarysse T, Eyben P, Duhayon N, Xu MW, Vandervorst W
737 - 743	Bias-induced junction displacements in scanning spreading resistance microscopy and scanning capacitance microscopy Eyben P, Duhayon N, Clarysse I, Vandervorst W
744 - 747	Identification of artifacts in Auger electron spectroscopy due to surface topography Gelsthorpe A, El-Gomati MM
748 - 753	High-resolution complex structures for two-dimensional photonic crystals realized by x-ray diffraction lithography Businaro L, Romanato F, Candeloro P, Di Fabrizio E, Patrini M, Galli M, Andreani C, Passaseo A, De Vittorio M
754 - 759	Structural study of amorphous vanadium oxide films for thin film microbattery Kim HK, Seong TY, Yoon YS
760 - 762	Temperature-dependent characteristics of an Al0.2Ga0.8As/ln(0.22)Ga(0.78)As pseudomorphic double heterojunction modulation doped field-effect transistor with a GaAs/AlGaAs superlattice buffer layer Li YJ, Hsu WC, Wang SY
763 - 766	Fabrication of monodomain alumina pore arrays with an interpore distance smaller than the lattice constant of the imprint stamp Choi J, Nielsch K, Reiche M, Wehrspohn RB, Gosele U
767 - 774	Study of titanium silicide formation using spike anneal for integrated chip manufacturing Tan CC, Lu L, Lai CW, See A, Chan LH
775 - 780	Single electron transistors with Nb/AlOx/Nb junctions Dolata R, Scherer H, Zorin AB, Niemeyer J
781 - 784	Influence of hydrogen plasma treatment on boron implanted junctions in silicon Rangan S, Horn M, Ashok S, Mohapatra YN
785 - 789	Improvement of mechanical properties of nanometer period multilayer films at interfaces of each layer Miyake S
790 - 794	Sub-0.1 mu m nitride hard mask open process without precuring the ArF photoresist Kim J, Chae YS, Lee WS, Shon JW, Kang CJ, Han WS, Moon JT
795 - 799	NiAuGeAu ohmic contacts for a planar InP-based high electron mobility transistor structure with suppressed drain conductance frequency dispersion Arai T, Sawada K, Hara N
800 - 803	Dry etching of ZnO films and plasma-induced damage to optical properties Park JS, Park HJ, Hahn YB, Yi GC, Yoshikawa A
804 - 813	Multilayer diffusion barrier for copper metallization using a thin interlayer metal (M=Ru, Cr, and Zr) between two TiN films Kim SH, Nam KT, Datta A, Kim HM, Kim KB, Kang DH
814 - 817	Optical properties of thin film CrxNy-CrOxNy multilayer films for 157 nm optical lithography Rack PD, Lassiter M, Bourov A, Baiko D, Smith B
818 - 822	Patterning SiO2 thin films using synchrotron radiation stimulated etching with a Co contact mask Wang CS, More SD, Wang ZH, Yamamura S, Nonagaki Y, Urisu T
823 - 827	Development of an electron-beam lithography system for high accuracy masks Kawano H, Ito H, Mizuno K, Matsuzaka T, Kawasaki K, Saitou N, Ohta H, Sohda Y
828 - 836	Integrated equipment-feature modeling investigation of fluorocarbon plasma etching of SiO2 and photoresist Zhang D, Rauf S, Sparks TG, Ventzek PLG
837 - 842	Crystallization and pyroelectric effect of semiconducting YBaCuO thin films deposited at different temperatures Yildiz A, Butler DP, Celik-Butler Z, Kim CU
843 - 847	Inductively coupled plasma reactive ion etching of GaInAsSb and AlGaAsSb for quaternary antimonide multiple interconnected module thermophotovoltaics Peake GM, Shul RJ, Ashby CIH, Cederberg JG, Hafich MJ, Biefeld RM, Palmisiano MN
848 - 857	Properties of reactive-sputtered Ti1-xAlxN films for complementary metal-oxide-semicond uctor silicon storage node electrode diffusion barriers Kim SD, Rhee JK, Park HM
858 - 861	Improving the quality of electroplated copper films by rapid thermal annealing Chang SC, Shieh JM, Dai BT, Feng MS, Wang YL
862 - 867	Applications of micro-Raman spectroscopy in salicide characterization for Si device fabrication Zhao FF, Chen SY, Shen ZX, Gao XS, Zheng JZ, See AK, Chan LH
868 - 871	Experimental studies of the cap structure of single-walled carbon nanotubes Dean KA, Chalamala BR
872 - 878	Analysis of the I-V characteristics of Al/4H-SiC Schottky diodes Zhang JY, Harrell WR
879 - 882	Organic modified Schottky contacts: Barrier height engineering and chemical stability Kampen TU, Park S, Zahn DRT
883 - 887	Growth and characterization of modulation-doped double barrier quantum well infrared photodetectors Luna E, Guzman A, Sanchez-Rojas JL, Tijero JMG, Hey R, Hernando J, Munoz E
888 - 894	Characterization of different-Al-content AlxGa1-xN/GaN heterostructures and high-electron-mobility transistors on sapphire Arulkumaran S, Egawa T, Ishikawa H, Jimbo J
895 - 899	Role of O(D-1) in the oxidation of Si(100) Kaspar T, Tuan A, Tonkyn R, Hess WP, Rogers JW, Ono Y
900 - 903	Low-loss InP-based photonic-crystal waveguides etched with Ar/Cl-2 chemically assisted ion beam etching Mulot M, Anand S, Swillo M, Qiu M, Jaskorzynska B, Talneau A
904 - 911	Chemical topography analyses of silicon gates etched in HBr/Cl-2/O-2 and HBr/Cl-2/O-2/CF4 high density plasmas Vallier L, Foucher J, Detter X, Pargon E, Joubert O, Cunge G, Lill T
912 - 915	Deep reactive ion etching characteristics of a macromachined chemical reactor Besser RS, Shin WC
916 - 918	Comparative measurements of the piezoelectric coefficient of a lead zirconate titanate film by piezoresponse force microscopy using electrically characterized tips Lin HN, Chen SH, Ho ST, Chen PR, Lin IN
919 - 922	Contact resistance of newly proposed RuTiN and RuTiO diffusion barriers for future high-density memory capacitors Yoon DS, Roh JS