L11 - L14 |
Influence of background gas pressure charging potential and target distance on the spot size ablated by single pulsed electron beam Aga SJ, Cox C, Ueda A, Jackson E, Collins WE, Mu R |
1979 - 1984 |
Quadrupole mass spectrometry desorption analysis of Ga adsorbate on AIN (0001) Brown JS, Koblmuller G, Averbeck R, Riechert H, Speck JS |
1985 - 1991 |
Effects of oxygen pressure on the microstructure of LaNiO3 conductive thin film monitored by in situ reflection high energy diffraction Zhu J, Zheng L, Wei XH, Zhang Y, Li YR |
1992 - 1998 |
Parametric study of sputtered Sr-deficient SrBi2Ta2O9 thin films Zhang S, Li YB, Fei WD, Gan ZH, Mhaisalkar S, Li XM |
1999 - 2002 |
Nitriding of a tool, steel with an electron-beam-excited plasma Shoyama H, Hishida T, Hara T, Dake Y, Mori T, Nagai H, Hori M, Goto T |
2003 - 2007 |
Writing and erasing efficiency analysis on optical-storage media using scanning surface potential microscopy Chen SH, Hou SP, Hsieh J'H, Chen HK, Tsai DP |
2008 - 2020 |
Integrated framework for the flux calculation of neutral species inside trenches and holes during plasma etching Kokkoris G, Boudouvis AG, Gogolides E |
2021 - 2024 |
Effects of low-temperature-grown buffers on pulsed-laser deposition of GaN on LiNbO3 Tsuchiya Y, Oshima M, Kobayashi A, Ohta J, Fujioka H |
2025 - 2040 |
Improved volume-averaged model for steady and pulsed-power electronegative discharges Kim S, Lieberman MA, Lichtenberg AJ, Gudmundsson JT |
2041 - 2048 |
Strain mediated reconstructions and indium segregation on InGaAs/GaAs(001) alloy-surfaces at intermediate lattice mismatch Riposan A, Millunchick JM, Pearson C |
2049 - 2053 |
Comparison of saturation current characteristics for ultrathin silicon oxides grown on n- and p-type silicon substrates simultaneously Wang TM, Chang CH, Chang SJ, Hwu JG |
2054 - 2060 |
Mosaic nanostructure of TiO2 with rutile short-range atomic order Aita CR |
2061 - 2069 |
Interface broadening due to ion mixing during thin film growth at the radio-frequency-biased electrode in a plasma-enhanced chemical vapor deposition environment Amassian A, Svec M, Desjardins P, Martinu L |
2070 - 2075 |
Influence of substrate properties and annealing temperature on the stress state of magnetron sputtered tungsten thin films Oliveira JC, Cavaleiro A |
2076 - 2081 |
Characterization of fluorine-modified organosilicate glass Liu CW, Wang YL, Juang Y, JangJean SK, Lee WH |
2082 - 2086 |
SiO2-like film deposition by dielectric barrier discharge plasma gun at ambient temperature under an atmospheric pressure Chen Q, Zhang YF, Han EL, Ge YJ |
2087 - 2093 |
Heat transfer through a rarefied gas confined between two coaxial cylinders with high radius ratio Sharipov F, Bertoldo G |
2094 - 2099 |
Thermal stability of sputter deposited nanocrystalline W2N/amorphous Si3N4 coatings Fu T, Shen YG, Zhou ZF, Li KY |
2100 - 2104 |
Measurement of Cu atom density in a magnetron sputtering plasma source using an YBaCuO target by laser-induced fluorescence imaging spectroscopy Gao JS, Nafarizal N, Sasaki K |
2105 - 2112 |
Interfacial characterization and residual stress analysis in diamond films on LiNbO3 Jagannadham K, Watkins TR, Lance MJ |
2113 - 2116 |
Nitriding of AISI 4140 steel by a low energy broad ion source Ochoa EA, Figueroa CA, Alvarez F |
2117 - 2121 |
Photon stimulated ion desorption from condensed thiophene photoexcited around the S 1s-edge Rocco MLM, Sekiguchi T, Baba Y |
2122 - 2127 |
Reactive sputter-deposition of AlN films by dense plasma focus Sadiq M, Ahmad S, Shafiq M, Zakaullah M, Ahmad R, Waheed A |
2128 - 2132 |
Development of a low pressure microwave excited plasma and its application to the formation of microcrystalline silicon films Kikukawa D, Hori M, Honma K, Yamamoto M, Goto T, Takahashi S, Den S |
2133 - 2138 |
Lifetime measurement of metastable fluorine atoms using electron cyclotron resonance plasma source Shimizu M, Ohmi H, Kakiuchi H, Yasutake K |
2139 - 2146 |
Influence of thermal annealing on the resistivity of titanium/platinum thin films Schmid U, Seidel H |
2147 - 2150 |
Thermally induced structural changes in nanoporous silicon dioxide from x-ray photoelectron spectroscopy Soh MTK, Thomas JH, TaIghader JJ |
2151 - 2158 |
Time-resolved measurements of the E-to-H mode transition in electronegative pulse-modulated inductively coupled plasmas Edamura M, Benck EC, Wang YC |
2159 - 2163 |
New design for indentation measurement using fiber Bragg grating Chen J, Kahrizi M |
2164 - 2171 |
Microstructural differences in thin film ZnGa2O4 : Mn phosphor produced by differences in sputtering gas pressure Kim JH, Holloway PH |
2172 - 2175 |
Real-time monitoring of charge accumulation during pulse-time-modulated plasma Ohtake H, Jinnai B, Suzuki Y, Soda S, Shimmura T, Sarnukawa S |
2176 - 2186 |
In situ measurement of the ion incidence angle dependence of the ion-enhanced etching yield in plasma reactors Belen RJ, Gomez S, Kiehlbauch M, Aydil ES |
2187 - 2191 |
Thin film deposition of barium strontium oxide by rf magnetron sputtering Liu Y, Day CM, Little SA, Jin F |
2192 - 2198 |
Vapor phase reactions in polymerization plasma for divinyisiloxane-bis-benzocyclobutene film deposition Kinoshita K, Nakano A, Kawahara J, Kunimi N, Hayashi Y, Kiso O, Saito N, Nakamura K, Kikkawa T |
2199 - 2205 |
Structural, electrical, optical, and photoelectrochemical properties of thin titanium oxinitride films (TiO2-2xNx with 0 <= x <= 1) Koslowski U, Ellmer K, Bogdanoff P, Dittrich T, Guminskaya T, Tributsch H |
2206 - 2211 |
Deposition profile of Ti film inside a trench and its correlation with gas-phase ionization in high-pressure magnetron sputtering Nafarizal N, Takada N, Nakamura K, Sago Y, Sasaki K |
2212 - 2216 |
Effects of the growth conditions on the roughness of amorphous hydrogenated carbon films deposited by plasma enhanced chemical vapor deposition Capote G, Prioli R, Freire FL |
2217 - 2222 |
Measurement of desorbed products during organic polymer thin film etching by plasma beam irradiation Kurihara K, Karahashi K, Egami A, Nakamura M |
2223 - 2228 |
Heat trapping for fast pumping of very hot gases Petit EJ |