A31 - A31 |
Papers from the 46th National Symposium of the American Vacuum Society, Part I - 25-29 October 1999 - Washington State Convention Center - Seattle, Washington - Preface Lucovsky G |
1051 - 1055 |
Simulation and correction of geometric distortions in scanning Kelvin probe microscopy Efimov A, Cohen SR |
1056 - 1060 |
Secondary ion mass spectrometry and x-ray photoelectron spectroscopy correlation study of nitrided gate oxide Bradbury CA, Blackmer C |
1061 - 1065 |
Channeling effects during focused-ion-beam micromachining of copper Phillips JR, Griffis DP, Russell PE |
1066 - 1071 |
Oxide-free phosphate films on copper probed by core and valence-band x-ray photoelectron spectroscopic studies in an anaerobic cell Rotole JA, Sherwood PMA |
1072 - 1076 |
Core-level satellites and outer core-level multiplet splitting in Mn model compounds Nelson AJ, Reynolds JG, Roos JW |
1077 - 1082 |
X-ray photoemission spectroscopy and scanning tunneling spectroscopy study on the thermal stability of WO3 thin films Santucci S, Cantalini C, Crivellari M, Lozzi L, Ottaviano L, Passacantando M |
1083 - 1088 |
Consistent, combined quantitative Auger electron spectroscopy and x-ray photoelectron spectroscopy digital databases: Convergence of theory and experiment Seah MP, Gilmore IS, Spencer SJ |
1089 - 1092 |
Adsorption probabilities of CO on O-ZnO: A molecular beam study Becker T, Boas C, Burghaus U, Woll C |
1093 - 1095 |
Compositional heterogeneity in ceria-based mixed oxides observed by x-ray photoelectron spectroscopy Graham GW, Roe CL, Haack LP, Straccia AM |
1096 - 1101 |
Characterization of zirconia coatings deposited by inductively coupled plasma assisted chemical vapor deposition Colpo P, Ceccone G, Sauvageot P, Baker M, Rossi F |
1102 - 1106 |
Adhesion effect of polyimide passivation layer on lead-on-chip die attachment Jiang TT, Bradbury CA, Canavan M |
1107 - 1113 |
Identification of surface chemical functional groups correlated to failure of reverse osmosis polymeric membranes Beverly S, Seal S, Hong S |
1114 - 1118 |
Self-assembled monolayers for polymer and protein cationization with time-of-flight secondary ion mass spectrometry Michel R, Luginbuhl R, Graham DJ, Ratner BD |
1119 - 1124 |
Sputter deposition and annealing of Ta, TaSix and TaBx composite films and their application in next generation lithography masks Racette K, Brooks C, Guarnieri CR, Hendy D |
1125 - 1129 |
Model for detection of immobilized superparamagnetic nanosphere assay labels using giant magnetoresistive sensors Tondra M, Porter M, Lipert RJ |
1130 - 1134 |
Selective area growth of GaN on Si(111) by chemical beam epitaxy Kim E, Tempez A, Medelci N, Berishev I, Bensaoula A |
1135 - 1138 |
High breakdown voltage Au/Pt/GaN Schottky diodes Dang GT, Zhang AP, Mshewa MM, Ren F, Chyi JI, Lee CM, Chuo CC, Chi GC, Han J, Chu SNG, Wilson RG, Cao XA, Pearton SJ |
1139 - 1143 |
Inductively coupled plasma-induced etch damage of GaN p-n junctions Shul RJ, Zhang L, Baca AG, Willison CG, Han J, Pearton SJ, Ren F |
1144 - 1148 |
Schottky diode measurements of dry etch damage in n- and p-type GaN Cao XA, Zhang AP, Dang GT, Ren F, Pearton SJ, Shul RJ, Zhang L |
1149 - 1152 |
Effect of N-2 discharge treatment on AlGaN/GaN high electron mobility transistor ohmic contacts using inductively coupled plasma Zhang AP, Dang GT, Ren F, Van Hove JM, Klaassen JJ, Chow PP, Cao XA, Pearton SJ |
1153 - 1157 |
Scanning tunneling microscopy study of surface morphology of Si(111) after synchrotron radiation stimulated desorption of SiO2 Gao Y, Mekaru H, Miyamae T, Urisu T |
1158 - 1162 |
Investigation of titanium nitride gates for tantalum pentoxide and titanium dioxide dielectrics Gilmer D, Hobbs C, Hegde R, La L, Adetutu O, Conner J, Tiner M, Prabhu L, Bagchi S, Tobin P |
1163 - 1168 |
Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness Lucovsky G, Wu Y, Niimi H, Yang H, Keister J, Rowe JE |
1169 - 1172 |
Comparison of plasma chemistries for dry etching of Ta2O5 Lee KP, Jung KB, Singh RK, Pearton SJ, Hobbs C, Tobin P |
1173 - 1175 |
Study of the impact of the time-delay effect on the critical dimension of a tungsten silicide/polysilicon gate after reactive ion etching Lin SP, Ou CH, Lee S, Tien YC, Hsu CF |
1176 - 1179 |
Formation of Ni silicides on (001)Si with a thin interposing Pt layer Cheng LW, Cheng SL, Chen LJ, Chien HC, Lee HL, Pan FM |
1180 - 1183 |
Silicon nanodots fabricated on a Si(100) surface via thermal nitridation and oxygen etching reactions Ha JS, Park KH, Yun WS |
1184 - 1189 |
Real-time optical characterization of heteroepitaxy by organometallic chemical vapor deposition Bell KA, Ebert M, Yoo SD, Flock K, Aspnes DE |
1190 - 1195 |
Real-time thickness and compositional control of Ga1-xInxP growth using p-polarized reflectance Woods V, Dietz N, Ito K, Lauko I |
1196 - 1201 |
Deposition of polycrystalline Si and SiGe by ultra-high vacuum chemical molecular epitaxy Chen KM, Huang HJ, Chang CY, Chen LP, Huang GW |
1202 - 1206 |
Strength of nanoscale copper under shear Heino P, Holloway P, Ristolainen E |
1207 - 1210 |
Effects of a new combination of additives in electroplating solution on the properties of Cu films in ULSI applications Hu JC, Chang TC, Wu CW, Chen LJ, Hsiung CS, Hsieh WY, Lur W, Yew TR |
1211 - 1215 |
Surface modification and cleaning enhancement of TaSi(N) films with dilute hydrofluoric acid Mangat PJS, Dauksher WJ, Whig R, O'Brien WL |
1216 - 1219 |
Low-k Si-O-C-H composite films prepared by plasma-enhanced chemical vapor deposition using bis-trimethylsilylmethane precursor Kim YH, Lee SK, Kim HJ |
1220 - 1224 |
Advanced selective dry etching of GaAs/AlGaAs in high density inductively coupled plasmas Lee JW, Devre MW, Reelfs BH, Johnson D, Sasserath JN, Clayton F, Hays D, Pearton SJ |
1225 - 1229 |
Characterization of plasma enhanced chemical vapor deposited SiC and its application in advanced reticle technology-scattering with angular limitation in projection electron beam lithography membrane Han SI, Mangat PJS, Smith SM, Dauksher WJ, Convey D, Gregory RB |
1230 - 1233 |
New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing Johnson RS, Niimi H, Lucovsky G |
1234 - 1238 |
Multicolor-emitting thin-film electroluminescent devices using Ga2O3 phosphors co-doped with Mn and Cr Minami T, Nakatani T, Miyata T |
1239 - 1246 |
Intrinsic and extrinsic magnetic properties of the naturally layered manganites Berger A, Mitchell JF, Miller DJ, Jiang JS, Bader SD |
1247 - 1253 |
Ferromagnetic semiconductor heterostructures based on (GaMn)As Tanaka M, Shimizu H, Hayashi T, Shimada H, Ando K |
1254 - 1258 |
Low-temperature gaseous nitriding and subsequent oxidation of epitaxial Ni/Fe bilayers Mijiritskii AV, Boerma DO |
1259 - 1263 |
Surface-sensitive, element-specific magnetometry with x-ray linear dichroism Schumann FO, Willis RF, Tobin JG |
1264 - 1268 |
Exchange bias in Fe/Cr double superlattices Jiang JS, Felcher GP, Inomata A, Goyette R, Nelson CS, Bader SD |
1269 - 1272 |
Magnetic stability of novel exchange coupled systems Inomata A, Jiang JS, You CY, Pearson JE, Bader SD |
1273 - 1277 |
Effects of ultraviolet illumination on dry etch rates of NiFe-based magnetic multilayers Cho H, Lee KP, Hahn YB, Lambers ES, Pearton SJ |
1278 - 1281 |
Growth of ultrathin Co/Cu/Si(110) films Maat S, Liu C, Eads W, Umlor MT, Mankey GJ |
1282 - 1286 |
Generation of positively charged particles at an anode and transport to device wafers in a real radio frequency plasma etching chamber for tungsten etch-back process Moriya T, Ito N, Uesugi F, Hayashi Y, Okamura K |
1287 - 1296 |
Multizone uniformity control of a chemical mechanical polishing process utilizing a pre- and postmeasurement strategy El Chemali C, Moyne J, Khan K, Nadeau R, Smith P, Colt J, Chapple-Sokol J, Parikh T |
1297 - 1302 |
Demonstration of broadband radio frequency sensing: Empirical polysilicon etch rate estimation in a Lam 9400 etch tool Garvin C, Grizzle JW |
1303 - 1307 |
Real time control of plasma deposited optical filters by multiwavelength ellipsometry Heitz T, Hofrichter A, Bulkin P, Drevillon B |
1308 - 1312 |
Effects of trapped charges on Hg-Schottky capacitance-voltage measurements of n-type epitaxial silicon wafers Wang Q, Liu D, Virgo JT, Yeh J, Hillard RJ |
1313 - 1320 |
Plasma etch-back planarization coupled to chemical mechanical polishing for sub 0.18 mu m shallow trench isolation technology Schiltz A, Palatini L, Paoli M, Rivoire M, Prola A |
1321 - 1325 |
Experimental and theoretical results of room-temperature single-electron transistor formed by the atomic force microscope nano-oxidation process Gotoh Y, Matsumoto K, Maeda T, Cooper EB, Manalis SR, Fang H, Minne SC, Hunt T, Dai H, Harris J, Quate CF |
1326 - 1328 |
Fabrication of bismuth nanowires with a silver nanocrystal shadowmask Choi SH, Wang KL, Leung MS, Stupian GW, Presser N, Morgan BA, Robertson RE, Abraham M, King EE, Tueling MB, Chung SW, Heath JR, Cho SL, Ketterson JB |
1329 - 1332 |
Fabrication of metal nanowire using carbon nanotube as a mask Yun WS, Kim J, Park KH, Ha JS, Ko YJ, Park K, Kim SK, Doh YJ, Lee HJ, Salvetat JP, Forro L |
1333 - 1337 |
Fabrication of a nanosize metal aperture for a near field scanning optical microscopy sensor using photoresist removal and sputtering techniques Jung MY, Lyo IW, Kim DW, Choi SS |
1338 - 1344 |
Nondestructive one-dimensional scanning capacitance microscope dopant profile determination method and its application to three-dimensional dopant profiles Kang ES, Kang JW, Hwang HJ, Lee JH |
1345 - 1348 |
Scanning probe microscopy tip-sample interactions in primary alcohols of varying chain length Ralich RM, Wu Y, Ramsier RD, Henriksen PN |
1349 - 1353 |
Isolating, imaging, and electrically characterizing individual organic molecules on the Si(100) surface with the scanning tunneling microscope Hersam MC, Guisinger NP, Lyding JW |
1354 - 1358 |
Etching characteristics of SrBi(2)Ya(2)O(9) film with Ar/CHF3 plasma Seo JW, Lee DH, Lee WJ, Yu BG, Kwon KH, Yeom GY, Chang EG, Kim CI |
1359 - 1365 |
Optical emission studies and neutral stream characterization of a surface reflection materials processing source Tang XM, Manos DM |
1366 - 1372 |
Estimation of surface kinetic parameters and two-dimensional simulation of InP pattern features during CH4-H-2 plasma etching Rhallabi A, Houlet L, Turban G |
1373 - 1376 |
Effects of BCl3 addition on Ar/Cl-2 gas in inductively coupled plasmas for lead zirconate titanate etching An TH, Park JY, Yeom GY, Chang EG, Kim CI |
1377 - 1380 |
Roles of N-2 gas in etching of platinum by inductively coupled Ar/Cl-2/N-2 plasmas Ryu JH, Kim NH, Kim HS, Yeom GY, Chang EG, Kim CI |
1381 - 1384 |
Etching mechanism of (Ba,Sr)TiO3 films in high density Cl-2/BCl3/Ar plasma Kim SB, Lee YH, Kim TH, Yeom GY, Kim CI |
1385 - 1389 |
Deceleration of silicon etch rate at high aspect ratios Kiihamaki J |
1390 - 1394 |
Magnetized inductively coupled plasma etching of GaN in Cl-2/BCl3 plasmas Lee YH, Sung YJ, Yeom GY, Lee JW, Kim TI |
1395 - 1400 |
Diagnostic of rf discharge plasma by Thomson scattering with gated intensified charge coupled device detectors Moshkalyov SA, Thompson C, Morrow T, Graham WG |
1401 - 1410 |
Plasma enhanced chemical vapor deposition Si-rich silicon oxynitride films for advanced self-aligned contact oxide etching in sub-0.25 mu m ultralarge scale integration technology and beyond Kim JH, Yu JS, Ku JC, Ryu CK, Oh SJ, Kim SB, Kim JW, Hwang JM, Lee SY, Kouichiro I |
1411 - 1419 |
Transfer etching of bilayer resists in oxygen-based plasmas Mahorowala AP, Babich K, Lin Q, Medeiros DR, Petrillo K, Simons J, Angelopoulos M, Sooriyakumaran R, Hofer D, Reynolds GW, Taylor JW |
1420 - 1424 |
Integration of metal masking and etching for deep submicron patterning Gabriel CT, Kim RY, Baker DC |
1425 - 1430 |
Reactive ion etch of 150 nm Al lines for interconnections in dynamic random access memory Stojakovic G, Ning XJ |
1431 - 1436 |
Characterization of process-induced charging damage in scaled-down devices and reliability improvement using time-modulated plasma Noguchi K, Samukawa S, Ohtake H, Mukai T |
1437 - 1442 |
Insertion process and electrical conduction of conjugated molecules in n-alkanethiol self-assembled monolayers on Au(111) Ishida T, Mizutani W, Tokumoto H, Choi N, Akiba U, Fujihira M |
1443 - 1447 |
Decomposition of 1,3-butadiene on Ru(001): Evidence for a (CH)(4) metallacycle Weiss MJ, Hagedorn CJ, Weinberg WH |
1448 - 1454 |
Study of boron effects on the reaction of Co and Si1-xGex at various temperatures Huang HJ, Chen KM, Chang CY, Huang TY, Chang TC, Chen LP, Huang GW |
1455 - 1459 |
The adsorption and desorption of CO on the W(111) surface Lee SY, Kim YD, Yang TS, Boo JH, Park SC, Lee SB, Park CY, Kwak HT |
1460 - 1463 |
Surface structure of MnO/Rh(100) studied by scanning tunneling microscopy and low-energy electron diffraction Nishimura H, Tashiro T, Fujitani T, Nakamura J |
1464 - 1468 |
In situ study of the formation of SiC thin films on Si(111) surfaces with 1,3-disilabutane: Adsorption properties and initial deposition characteristics Yoon HG, Boo JH, Liu WL, Lee SB, Park SC, Kang H, Kim Y |
1469 - 1472 |
Site preferences of oxygen and boron atoms during dissociative reaction of HBO2 molecules onto the Si(111)-7x7 surface Kaikoh T, Miyake K, Li YJ, Morita R, Yamashita M, Shigekawa H |
1473 - 1477 |
Cesium-induced structural transformation from the Si(113)3x2 to the 3x1 surface Hwang CC, An KS, Kim SH, Kim YK, Park CY, Kwon SN, Song HS, Jung KH, Kinoshita T, Kakizaki A, Kang TH, Kim B |
1478 - 1483 |
Cyclic voltammetry, x-ray photoelectron spectroscopy, secondary-ion-mass spectrometry, and ion-scattering spectrometry examination of zirconium passive film breakdown in the presence of sulfate Schennach R, Mamun A, Kunamneni N, Cocke DL |
1484 - 1487 |
Ultrahigh vacuum compatible matrix assisted laser desorption/ionization time-of-flight mass spectrometer Porter TL, Hermann S |
1488 - 1491 |
Na- and Li-induced Ge(111)3x1 reconstruction: Different electronic configurations revealed by scanning tunneling microscopy images Lee G, Kim J, Mai H, Chizhov I, Willis RF |
1492 - 1496 |
Reflection high-energy electron diffraction and scanning tunneling microscopy study of InP(001) surface reconstructions LaBella VP, Ding Z, Bullock DW, Emery C, Thibado PM |
1497 - 1502 |
Reactions of gas-phase atomic hydrogen and deuterium with chemically modified Ir(111) surfaces Hagedorn CJ, Weiss MJ, Weinberg WH |
1503 - 1508 |
Reaction between NO and CO on rhodium (100): How lateral interactions lead to auto-accelerating kinetics Hopstaken MJP, Niemantsverdriet JW |
1509 - 1513 |
Coverage dependence of activation barriers: Nitrogen on Ru(0001) Diekhoner L, Mortensen H, Baurichter A, Luntz AC |
1514 - 1519 |
Microreactor for studies of low surface area model catalysts made by electron-beam lithography Johansson S, Fridell E, Kasemo B |
1520 - 1525 |
Water adsorption structures on flat and stepped Ru(0001) surfaces Hoffmann W, Benndorf C |
1526 - 1531 |
Monte Carlo derived diffusion parameters for Ga on the GaAs(001)-(2x4) surface: A molecular beam epitaxy-scanning tunneling microscopy study LaBella VP, Bullock DW, Ding Z, Emery C, Harter WG, Thibado PM |
1533 - 1537 |
Ionized sputter deposition using an extremely high plasma density pulsed magnetron discharge Macak K, Kouznetsov V, Schneider J, Helmersson U, Petrov I |
1538 - 1545 |
Origin and evolution of sculptured thin films Messier R, Venugopal VC, Sunal PD |
1546 - 1549 |
Ionized physical-vapor deposition using a hollow-cathode magnetron source for advanced metallization Klawuhn E, D'Couto GC, Ashtiani KA, Rymer P, Biberger MA, Levy KB |
1550 - 1554 |
Effects of copper seedlayer deposition method for electroplating Cooney EC, Strippe DC, Korejwa JW |
1555 - 1560 |
Steel coating by self-induced ion plating, a new high throughput metallization ion plating technique Brande PV, Weymeersch A |
1561 - 1566 |
Effect of HCl catalyst in the formation of flat structures of Ta2O5 thin films by sol-gel technique Cantalini C, Pelino M, Phani RA, Passacantando M, Picozzi P, Santucci S |
1567 - 1570 |
Mechanical properties and residual stress in AlN films prepared by ion beam assisted deposition Watanabe Y, Kitazawa N, Nakamura Y, Li CL, Sekino T, Niihara K |
1571 - 1578 |
Oxidation and chemical state analysis of polycrystalline magnetron sputtered (Ti,Al)N films at ambient and liquid N-2 temperatures Seal S, Kale A, Sundaram KB, Jimenez D |
1579 - 1583 |
Improved light stability of colored SiO2 coatings containing organic and metalorganic dye molecules Diaz-Flores LL, Perez-Bueno JJ, Ramirez-Bon R, Espinoza-Beltran FJ, Vorobiev YV, Gonzalez-Hernandez J |
1584 - 1589 |
Origin of electrical property distribution on the surface of ZnO : Al films prepared by magnetron sputtering Minami T, Miyata T, Yamamoto T, Toda H |
1590 - 1594 |
Low-temperature growth of Ti(C,N) thin films on D2 steel and Si(100) substrates by plasma-enhanced metalorganic chemical vapor deposition Boo JH, Heo CH, Cho YK, Han JG |
1595 - 1598 |
Study on the characteristics of TiN thin film deposited by the atomic layer chemical vapor deposition method Jeon H, Lee JW, Kim YD, Kim DS, Yi KS |
1599 - 1603 |
Alternative procedure for the fabrication of close-spaced sublimated CdTe solar cells Moutinho HR, Dhere RG, Ballif C, Al-Jassim MM, Kazmerski LL |
1604 - 1608 |
CdS/CdTe interface analysis by transmission electron microscopy Dhere RG, Al-Jassim MM, Yan Y, Jones KM, Moutinho HR, Gessert TA, Sheldon P, Kazmerski LL |
1609 - 1612 |
Synthesis of highly oriented piezoelectric AlN films by reactive sputter deposition Engelmark F, Fucntes G, Katardjiev IV, Harsta A, Smith U, Berg S |
1613 - 1618 |
Surface morphology analysis in correlation with crystallinity of CeO2(110) layers on Si(100) substrates Inoue T, Nakamura T, Nihei S, Kamata S, Sakamoto N, Yamamoto Y |
1619 - 1631 |
X-ray photoelectron spectroscopy and Anger electron spectroscopy investigation on the oxidation resistance of plasma-treated copper leadframes Wong ASW, Krishnan RG, Sarkar G |
1632 - 1637 |
Optimization of the reflectivity of magnetron sputter deposited silver films Vergohl M, Malkomes N, Szyszka B, Neumann F, Matthee T, Brauer G |
1638 - 1641 |
Preparation and characterization of rf-sputtered SrTiO3 thin films Radhakrishnan K, Tan CL, Zheng HQ, Ng GI |
1642 - 1648 |
Organic films prepared by polymer sputtering Biederman H |
1649 - 1652 |
Preparation of Co and CoNx thin films by unbalanced radio frequency magnetron sputtering Tanaka T, Kawabata K, Kitabatake A |
1653 - 1658 |
Chemical vapor deposition of alpha aluminum oxide for high-temperature aerospace sensors Niska RH, Constant AP, Witt T, Gregory OJ |
1659 - 1662 |
Phase development of radio-frequency magnetron sputter-deposited Pb(Mg1/3Nb2/3)O-3-PbTiO3 (90/10) thin films Lee JK, Park D, Cheong DS, Park JW, Park CS |
1663 - 1667 |
Electrical properties and surface morphology of heteroepitaxial-grown tin-doped indium oxide thin films deposited by molecular-beam epitaxy Taga N, Shigesato Y, Kamei M |
1668 - 1671 |
Influence of the target-substrate distance on the properties of indium tin oxide films prepared by radio frequency reactive magnetron sputtering Meng LJ, dos Santos MP |
1672 - 1676 |
p-type transparent conducting In2O3-Ag2O thin films prepared by reactive electron beam evaporation technique Asbalter J, Subrahmanyam A |
1677 - 1680 |
Mott-Schottky analysis of thin ZnO films Windisch CF, Exarhos GJ |
1681 - 1689 |
Structural determination of wear debris generated from sliding wear tests on ceramic coatings using Raman microscopy Constable CP, Yarwood J, Hovsepian P, Donohue LA, Lewis DB, Munz WD |
1690 - 1693 |
Effect of rapid thermal annealing temperature on the formation of CoSi studied by x-ray photoelectron spectroscopy and micro-Raman spectroscopy Zhao J, Ballast LK, Hossain TZ, Trostel RE, Bridgman WC |
1694 - 1700 |
Temperature dependence of structure and electrical properties of germanium-antimony-tellurium thin film Gonzalez-Hernandez J, Prokhorov E, Vorobiev Y |
1701 - 1703 |
In-situ characterization of thin films by the focused ion beam Choi SH, Li R, Pak M, Wang KL, Leung MS, Stupian GW, Presser N |
1704 - 1708 |
Integrated measurement of Ti and TiN thickness and optical constants using reflectance data through a vacuum chamber window Tabet MF, Kelkar U, McGahan WA |
1709 - 1712 |
Stabilization of high-deposition-rate reactive magnetron sputtering of oxides by in situ spectroscopic ellipsometry and plasma diagnostics Vergohl M, Hunsche B, Malkomes N, Matthee T, Szyszka B |
1713 - 1717 |
Growth of SiC thin films on graphite for oxidation-protective coating Boo JH, Kim MC, Lee SB, Park SJ, Han JG |
1718 - 1723 |
Enhanced adhesion through local epitaxy of transition-metal nitride coatings on ferritic steel promoted by metal ion etching in a combined cathodic arc/unbalanced magnetron deposition system Schonjahn C, Donohue LA, Lewis DB, Munz WD, Twesten RD, Petrov I |
1724 - 1729 |
Compact wide-range cold-cathode gauges Kendall BRF, Drubetsky E |
1730 - 1735 |
New enhanced performance low-pressure capacitance manometer Grudzien CP, Lischer DJ |
1736 - 1745 |
Evolution of integrated-circuit vacuum processes: 1959-1975 Waits RK |
1746 - 1750 |
History of industrial and commercial ion implantation 1906-1978 Yarling CB |
1751 - 1754 |
Application of porcelain enamel as an ultra-high-vacuum-compatible electrical insulator Biscardi C, Hseuh H, Mapes M |
1755 - 1757 |
Fundamental functions of a new type of leak detector using oxygen-ion conductor Tatenuma K, Noguchi T, Uchida K, Saeki H, Ando A, Momose T |
1758 - 1765 |
Review of pumping by thermal molecular pressure Hobson JP, Salzman DB |
1766 - 1771 |
Inner pressure measurement of turbo molecular pump Cheng HP, Jou RY, Lin JC, Chen CJ, Huang WH |
1772 - 1776 |
Measurement of axial pressure distribution on a rotor of a helical grooved molecular drag pump Sawada T, Sugiyama W, Takano K |
1777 - 1781 |
Dry vacuum pumps for semiconductor processes: Guidelines for primary pump selection Lessard PA |
1782 - 1788 |
Dry vacuum pumps: A method for the evaluation of the degree of dry Davis RP, Abreu RA, Chew AD |
1789 - 1793 |
Experiments with a thin-walled stainless-steel vacuum chamber Nemanic V, Setina J |
1794 - 1799 |
Laser Interferometer Gravitational-Wave Observatory beam tube component and module leak testing Carpenter WA, Shaw PB, Jones L, Weiss R |
1800 - 1803 |
Decay rate of photoresist outgassing from ion implantation Perel AS, Horsky TN |
1804 - 1808 |
Evolution of the corrosion process on thin-film media Ying JF, Anoikin T, Martner C |
1809 - 1817 |
Tribochemistry of monodispersed ZDOL with hydrogenated carbon overcoats Chen CY, Bogy DB, Bhatia CS |
1818 - 1822 |
New field-emission device with improved vacuum features Mammana VP, Degasperi FT, Monteiro OR, Vuolo JH, Salvadori MC, Brown IG |
1823 - 1829 |
Excimer laser processing for a-Si and poly-Si thin film transistors for imager applications Lu JP, Mei P, Fulks RT, Rahn J, Ho J, Wang Y, Boyce JB, Street RA |
1830 - 1833 |
Pinhole decoration in magnetic tunnel junctions Allen D, Schad R, Zangari G, Zana I, Yang D, Tondra MC, Wang D |
1834 - 1837 |
Characterization and analysis of a novel hybrid magnetoelectronic device for magnetic field sensing Schaadt DM, Yu ET, Sankar S, Berkowitz AE |
1838 - 1844 |
Periodic magnetic microstructures by glancing angle deposition Dick B, Brett MJ, Smy TJ, Freeman MR, Malac M, Egerton RF |
1845 - 1847 |
Variable temperature and ex situ spin-polarized low-energy electron microscope Tober ED, Witte G, Poppa H |
1848 - 1852 |
Cryogenic etching of deep narrow trenches in silicon Aachboun S, Ranson P, Hilbert C, Boufnichel M |
1853 - 1858 |
Polycrystalline silicon thin films with hydrofluoric acid permeability for underlying oxide etching and vacuum encapsulation Kageyama Y, Tsuchiya T, Funabashi H, Sakata J |
1859 - 1863 |
Etching of organic low dielectric constant material SiLK (TM) on the Lam Research Corporation 4520XLE (TM) Janowiak C, Ellingboe S, Morey I |
1864 - 1868 |
Growth of carbon nanotubes by microwave plasma-enhanced chemical vapor deposition at low temperature Choi YC, Bae DJ, Lee YH, Lee BS, Park GS, Choi WB, Lee NS, Kim JM |
1869 - 1874 |
Influence of copper phthalocynanine on the charge injection and growth modes for organic light emitting diodes Forsythe EW, Abkowitz MA, Gao YL, Tang CW |
1875 - 1880 |
Growth and characterization of poly(arylamine) thin films prepared by vapor deposition Szulczewski GJ, Selby TD, Kim KY, Hassenzahl JD, Blackstock SC |
1881 - 1886 |
Desorption species from fluorocarbon film by Ar+ ion beam bombardment Hayashi M, Karahashi K |
1887 - 1892 |
Reactions of maleic anhydride over TiO2 (001) single crystal surfaces Wilson JN, Titheridge DJ, Kieu L, Idriss H |
1893 - 1899 |
Interaction of HCOOH with stoichiometric and reduced SrTiO3(100) surfaces Wang LQ, Ferris KF, Herman GS, Engelhard MH |
1900 - 1905 |
Reactions of acetic acid on UO2(111) single crystal surfaces Chong SV, Idriss H |
1906 - 1914 |
Surface reduction of Cr-V2O3 by CO Toledano DS, Henrich VE, Metcalf P |
1915 - 1918 |
Optimized structural properties of wurtzite GaN on SiC(0001) grown by molecular beam epitaxy Ramachandran V, Feenstra RM, Sarney WL, Salamanca-Riba L, Greve DW |
1919 - 1922 |
Increase of electrical conductivity in p-GaN by immersion in H2O2 solution Liu B, Ahonen MH, Holloway PH |
1923 - 1927 |
Oxidation of Ni3Al(111) at 600, 800, and 1050 K investigated by scanning tunneling microscopy Rosenhahn A, Schneider J, Becker C, Wandelt K |
1928 - 1932 |
Deposition and characterization of highly oriented Mg-3(VO4)(2) thin film catalysts Ruffner JA, Sault AG, Rodriguez MA, Tissot RG |
1933 - 1936 |
How to fabricate a defect free Si(001) surface Hata K, Kimura T, Ozawa S, Shigekawa H |
1937 - 1940 |
Intermixing in Stranski-Krastanov germanium overlayer on Si(100) Kahng SJ, Ha YH, Moon DW, Kuk Y |
1941 - 1945 |
Motion of atomic steps on ultraflat Si(111): Constructive collisions Finnie P, Homma Y |
1946 - 1949 |
Origin, symmetry, and temperature dependence of the perturbation induced by Si extrinsic defects on the Sn/Si(111) alpha surface: A scanning tunneling microscopy study Ottaviano L, Crivellari M, Profeta G, Continenza A, Lozzi L, Santucci S |
1950 - 1954 |
Surface morphology and electronic structure of Ni/Ag(100) Hite DA, Kizilkaya O, Sprunger PT, Howard MM, Ventrice CA, Geisler H, Zehner DM |
1955 - 1958 |
Resonant Auger studies of metallic systems Coulthard I, Antel WJ, Frigo SP, Freeland JW, Moore J, Calaway WS, Pellin MJ, Mendelsohn M, Sham TK, Naftel SJ, Stampfl APJ |
1959 - 1964 |
1,3-dipolar cycloadditions on Si(100)-2x1: Theoretical studies of novel attachment chemistry for organic monolayers Barriocanal JA, Doren DJ |
1965 - 1970 |
Reactions of substituted aromatic hydrocarbons with the Si(001) surface Coulter SK, Hovis JS, Ellison MD, Hamers RJ |
1971 - 1976 |
Gas-phase chemistry in up-scaled plasma enhanced metal-organic chemical-vapor deposition of TiN and Ti(C,N) on tool steel Driessen JPAM, Kuypers AD, Schoonman J |
1977 - 1982 |
Effect of nondiamond carbon on electron transport path of field-emitted electrons from undoped polycrystalline diamond films Shim JY, Baik HK, Song KM |
1983 - 1986 |
Effects of interface mixing on adhesion of amorphous carbon films synthesized by variable-energy direct carbon ion beam deposition Sohn MH, Kim SI |
1987 - 1992 |
Synthesis of diamondlike carbon films with superlow friction and wear properties Erdemir A, Eryilmaz OL, Fenske G |
1993 - 1997 |
Surface acoustic wave propagation properties of nitrogenated diamond-like carbon films Kim JY, Chung HJ, Kim HJ, Cho HM, Yang HK, Park JC |
1998 - 2002 |
Sputtered coatings for microfluidic applications Matson DW, Martin PM, Bennett WD, Johnston JW, Stewart DC, Bonham CC |
2003 - 2005 |
Novel proton exchange membrane thin-film fuel cell for microscale energy conversion Morse JD, Jankowski AF, Graff RT, Hayes JP |
2006 - 2011 |
Low-temperature polysilicon deposition by ionized magnetron sputtering Joo J |
2012 - 2016 |
Study of the mechanical behavior of plasma-deposited silica films on polycarbonate and steel Hofrichter A, Constantinescu A, Benayoun S, Bulkin P, Drevillon B |
2017 - 2022 |
Carburizing of tantalum by radio-frequency plasma assisted chemical vapor deposition Rubinshtein A, Shneck R, Raveh A, Klemberg-Sapieha JE, Martinu L |
2023 - 2026 |
Subnanometer scale tribological properties of nitrogen containing carbon coatings used in magnetic storage devices Wienss A, Persch-Schuy G, Hartmann R, Joeris P, Hartmann U |
2027 - 2032 |
Air bearing collision dynamics Stupp SE, Blanco RJ, Strom BD, Chen L |
2033 - 2038 |
Angle-resolved ESCA methods: Distribution and molecular conformation of perfluoropolyether lubricant Karplus MA, Pocker D |