| 221 - 225 |
Properties of atmospheric pressure plasmas with microwave excitations for plasma processing
Nagai M, Hori M, Goto T |
| 226 - 233 |
Etching mechanisms of Si and SiO2 in inductively coupled fluorocarbon plasmas: Correlation between plasma species and surface etching
Gaboriau F, Fernandez-Peignon MC, Cartry G, Cardinaud C |
| 234 - 240 |
Reactions of water and ethanol with polycrystalline TiC surfaces
Chen ZY, Perry SS, Savan A, Adams PM, Didziulis SV |
| 241 - 247 |
Optical properties and microstructure of plasma deposited Ta2O5 and Nb2O5 films
Szymanowski H, Zabeida O, Klemberg-Sapieha JE, Martinu L |
| 248 - 255 |
Role of hydrogen on the deposition and properties of fluorinated silicon-nitride films prepared by inductively coupled plasma enhanced chemical vapor deposition using SiF4/N-2/H-2 mixtures
Fandino J, Santana G, Rodriguez-Fernandez L, Cheang-Wong JC, Ortiz A, Alonso JC |
| 256 - 264 |
Development of chemically assisted etching method for GaAs-based optoelectronic devices
Gaillard M, Rhallabi A, Elmonser L, Talneau A, Pommereau F, Pagnod-Rossiaux P, Bouadma N |
| 265 - 269 |
Highly accurate coating composition control during co-sputtering, based on controlling plasma chromaticity
Anguita JV, Thwaites M, Holton B, Hockley P, Holton B, Rand S |
| 270 - 277 |
Inductively coupled plasmas: Optimizing the inductive-coupling efficiency for large-area source design
Colpo P, Meziani T, Rossi F |
| 278 - 280 |
Ion-assisted physical vapor deposition for enhanced film properties on nonflat surfaces
Alami J, Persson POA, Music D, Gudmundsson JT, Bohmark J, Helmersson U |
| 281 - 287 |
Feedback control of chlorine inductively coupled plasma etch processing
Lin C, Leou KC, Shiao KM |
| 288 - 292 |
Erosive wear properties of Ti-Si-N nanocomposite coatings studied by micro-sandblasting
Zeng XT, Goto T, Zhao LR, Ding XZ, Liew SC, Li GY |
| 293 - 297 |
Shallow and thermally stable Pt/W/Au Ohmic contacts to p-type InGaSb
Wang SH, Robinson JA, Mohney SE, Bennett BR |
| 298 - 303 |
Effect of Ar post-oxidation annealing on oxide-4H-SiC interfaces studied by capacitance to voltage measurements and photoemission spectroscopy
Hijikata Y, Yaguchi H, Yoshida S, Ishida Y, Yoshikawa M |
| 304 - 309 |
Growth modes of InN (000-1) on GaN buffet layers on sapphire
Liu B, Kitajima T, Chen DX, Leone SR |
| 310 - 315 |
Reaction kinetics of CulnSe(2) thin films grown from bilayer InSe/CuSe precursors
Kim S, Kim WK, Kaczynski RM, Acher RD, Yoon S, Anderson TJ, Crisalle OD, Payzant EA, Li SS |
| 316 - 321 |
High resolution electron energy loss spectroscopy study of Fomblin Z-tetraol thin films
Sung DY, Gellman AJ, Gui J, Ma XD |
| 322 - 329 |
Hydrogen pumping by austenitic stainless steel
Zajec B, Nemanic V |
| 330 - 335 |
Target material pathways model for high power pulsed magnetron sputtering
Christie DJ |
| 336 - 346 |
Navier-Stokes modeling of a Gaede pump stage in the viscous and transitional flow regimes using slip-flow boundary conditions
Giors S, Subba F, Zanino R |
| 347 - 354 |
In situ real-time monitoring of profile evolution during plasma etching of mesoporous low-dielectric-constant SiO2
Gerung H, Brinker CJ, Brueck SRJ, Han SM |
| 355 - 358 |
Plasma control using neural network and optical emission spectroscopy
Kim B, Bae JK, Hong WS |
| 359 - 361 |
Electrical properties of Cu/Ta interfaces under electrical current stressing
Liao CN, Liou KM |
| 362 - 363 |
Improved crystal grinding and polishing holder for metal single crystal preparations
Maksymovych P, Gasmire T, Ohno S, Yates JT |
| 364 - 365 |
Modified electron-beam evaporator for soft materials and low-vapor-pressure materials
Bouzidi L, Fowler JK, Slavin AJ |
| 366 - 366 |
Texture orientation of glancing angle deposited copper nanowire arrays (vol 22, pg 1379, 2004)
Alouach H, Mankey GJ |
