1 - 8 |
Effect of copper emitted from wafers on etch rates of insulator films in capacitively coupled fluorocarbon plasma Imai S |
9 - 12 |
Ultrahigh-frequency microplasma jet as a low-power, high-density, and localized ions/radicals source Miyazoe H, Sai M, Stauss S, Terashima K |
13 - 19 |
Effect on plasma and etch-rate uniformity of controlled phase shift between rf voltages applied to powered electrodes in a triode capacitively coupled plasma reactor Sung DY, Jeong SM, Park YM, Volynets VN, Ushakov AG, Kim GH |
20 - 28 |
Numerical study of the sputtering in a dc magnetron Kolev I, Bogaerts A |
29 - 36 |
Growth and characterization of TiAlN/CrAlN superlattices prepared by reactive direct current magnetron sputtering Barshilia HC, Deepthi B, Rajam KS, Bhatti KP, Chaudhary S |
37 - 50 |
Plasma atomic layer etching using conventional plasma equipment Agarwal A, Kushner MJ |
51 - 56 |
Selective formation of competitive c-axis and a-axis oriented LiNbO3 epitaxial films on Al2O3(1120) Akazawa H |
57 - 62 |
Analysis of surface roughness and its relationship with photoluminescence properties of silicon-rich oxide films Luna-Lopez JA, Morales-Sanchez A, Aceves-Mijares M, Yu Z, Dominguez C |
63 - 66 |
Crystallographic texture control of sputtered HfN thin films using low oxygen partial pressures Deniz D, Harper JME |
67 - 72 |
Second-order resonant ZnO-based film bulk acoustic resonator devices and thermal techniques to improve their resonant characteristics Mai L, Pham VS, Yoon G |
73 - 81 |
Tritium gas flow dynamics through the source and transport system of the Karlsruhe tritium neutrino experiment Malyshev OB, Day C, Luo X, Sharipov F |
82 - 88 |
Nanocomposite TiSiN coatings deposited by large area filtered arc deposition Cheng YH, Browne T, Heckerman B |
89 - 100 |
Computational and experimental study of gas flows through long channels of various cross sections in the whole range of the Knudsen number Varoutis S, Naris S, Hauer V, Day C, Valougeorgis D |
101 - 108 |
Photoluminescence from Er-doped Si-rich Si oxides deposited by magnetron sputtering in Ar or Ar+H-2 plasmas Heng CL, Chelomentsev E, Zalloum OHY, Wojcik J, Mascher P |
109 - 113 |
Effects of deposition parameters on tantalum films deposited by direct current magnetron sputtering Zhou YM, Xie Z, Xiao HN, Hu PF, He J |
114 - 120 |
Dilute hydrogen plasma cleaning of boron from silicon after etching of HfO2 films in BCl3 plasmas: Substrate temperature dependence Wang C, Donnelly VM |
121 - 129 |
Oxidation of (C2H5OH)-C-13 by NO and O-2 on the surface of stepped Pt(332): Relationship to selective catalytic reduction of NO with hydrocarbons Hu YH, Norton P, Griffiths K |
130 - 138 |
Profile evolution simulator for sputtering and ion-enhanced chemical etching Saussac J, Margot J, Chaker M |
139 - 144 |
Heavy-ion induced desorption of a TiZrV coated vacuum chamber bombarded with 5 MeV/u Ar8+ beam at grazing incidence Hedlund E, Malyshev OB, Westerberg L, Krasnov A, Semenov AS, Leandersson M, Zajec B, Kollmus H, Bellachioma MC, Bender M, Kramer A, Reich-Sprenger H |
145 - 156 |
Characterization of low-temperature silicon nitride films produced by inductively coupled plasma chemical vapor deposition Xu Q, Ra Y, Bachman M, Li GP |
157 - 164 |
Feedback control of plasma electron density and ion energy in an inductively coupled plasma etcher Lin C, Leou KC, Huang HM, Hsieh CH |
165 - 165 |
Copper ion transport induced dielectric failure: Inclusion of elastic drift and consequences for reliability (vol 26, pg 1497, 2008) Achanta RS, Plawsky JL, Gill WN |