Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.25, No.1 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (25 articles)

1 - 27	Module to guide the expert use of x-ray photoelectron spectroscopy by corrosion scientists Castle JE
28 - 36	Mechanisms of structural evolutions associated with the high current pulsed electron beam treatment of a NiTi shape memory alloy Zhang KM, Zou JX, Grosdidier T, Gey N, Weber S, Yang DZ, Dong C
37 - 41	Epitaxial (SrTiO3/NiO)(n)/MgO multiferroic heterostructure Kirby SD, Polking M, van Dover RB
42 - 47	High-power pulsed sputtering using a magnetron with enhanced plasma confinement Vlcek J, Kudlacek P, Burcalova K, Musil J
48 - 53	Phase-change characteristics of chalcogenide Ge1Se1Te2 thin films for use in nonvolatile memories Chung HB, Shin K, Lee JM
54 - 60	Inertial interlock bonding: A new approach to sputtering target construction Wickersham CE, Workman D
61 - 66	Phosphor coatings to enhance Si photovoltaic cell performance Chung P, Chung HH, Holloway PH
67 - 74	Rotary reactor for atomic layer deposition on large quantities of nanoparticles McCormick JA, Cloutier BL, Weimer AW, George SM
75 - 89	Quantitative detection of tiny amounts of helium isotopes in a hydrogen isotope atmosphere using a standard-resolution quadrupole mass spectrometer Frattolillo A, De Ninno A, Rizzo A
90 - 95	Long pulse pumping behavior of a cryopump for the neutral beam injector Chakrapani C, Sharma SK, Chakraborty AK, Singh MJ, Patel GB, Rambabu S, Prajapati B, Upadhyay J, Mattoo SK
96 - 103	Penetration of fluorine into the silicon lattice during exposure to F atoms, F-2, and XeF2: Implications for spontaneous etching reactions Winters HF, Graves DB, Humbird D, Tougaard S
L1 - L3	Fabrication of layered self-standing diamond film by dc arc plasma jet chemical vapor deposition Chen GC, Dai FW, Li B, Lan H, Askari J, Tang WZ, Lu FX
104 - 109	Development of a method for investigating carbon removal processes during photoassisted film growth using organometallic precursors: Application to platinum Cahill JJ, Panayotov VG, Cowen KA, Harris E, Koplitz LV, Birdwhistell K, Koplitz B
110 - 116	Corrosion behavior of Zr modified CrN coatings using metal vapor vacuum arc ion implantation Purushotham KP, Ward LP, Brack N, Pigram PJ, Evans P, Noorman H, Manory RR
117 - 125	Influence of the deposition parameters on the electronic and structural properties of pulsed laser ablation prepared Si1-xCx thin films Neri F, Barreca F, Fazio E, Barletta E, Mondio G, Trusso S, Brendebach B, Modrow H
126 - 133	Modeling of the chemically assisted ion beam etching process: Application to the GaAs etching by Cl-2/Ar+ Elmonser L, Rhallabi A, Gaillard M, Landesman JP, Talneau A, Pommereau F, Bouadma N
134 - 140	Characterization of neutral beam source based on pulsed inductively coupled discharge: Time evolution of ion fluxes entering neutralizer Abolmasov SN, Ozaki T, Samukawa S
141 - 147	Initial nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on Si surfaces with the various surface conditions using in situ medium energy ion scattering analysis Chung KB, Whang CN, Chang HS, Moon DW, Cho MH
148 - 152	Properties of SrBi2Ta0.8Nb1.2O9 thin films deposited by plasma-assisted pulsed-laser deposition Yang PX, Deng HM, Shi MR, Tong ZY
153 - 159	Synthesis and characterization of inorganic silicon oxycarbide glass thin films by reactive rf-magnetron sputtering Ryan JV, Pantano CG
160 - 166	Power-law scaling during shadowing growth of nanocolumns by oblique angle deposition Tang F, Karabacak T, Li L, Pelliccione M, Wang GC, Lu TM
167 - 186	Recommended practice for process sampling for partial pressure analysis Blessing JE, Ellefson RE, Raby BA, Brucker GA, Waits RK
187 - 190	Numerical and experimental comparative study of metal-organic chemical vapor deposition of ZnO Liu SM, Gu SL, Zhu SM, Ye JD, Liu W, Zhang R, Zheng YD
191 - 199	Effect of chemical bonds on the properties of SiN in thin film transistor liquid crystal display Xie ZY, Long CP, Deng CY, Rim SM
200 - 206	In situ spectroscopic ellipsometry analyses of hafnium diboride thin films deposited by single-source chemical vapor deposition Yang Y, Jayaraman S, Sperling B, Kim DY, Girolami GS, Abelson JR