Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.24, No.1 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (26 articles)

1 - 8	Etching of ruthenium coatings in O-2- and Cl-2-containing plasmas Hsu CC, Coburn JW, Graves DB
9 - 19	Free molecular background flow in a vacuum chamber equipped with two-sided pumps Cai CP, Boyd ID, Sun QH
20 - 24	Investigation of Ni reaction with sputtered amorphous SiGe thin film on SiO2 substrate Qu XP, Duan P, Wu YQ, Chen T, Wang GW, Ru GP, Li BZ
25 - 29	Control of plasma flux composition incident on TiN films during reactive magnetron sputtering and the effect on film microstructure Muratore C, Walton SG, Leonhardt D, Fernsler RF
30 - 40	Plasma etching of HfO2 at elevated temperatures in chlorine-based chemistry Helot M, Chevolleau T, Vallier L, Joubert O, Blanquet E, Pisch A, Mangiagalli P, Lill T
41 - 44	Effectiveness of dilute H-2 plasmas in removing boron from Si after etching of HfO2 films in BCl3 plasmas Wang C, Donnelly VM
45 - 54	Ion-surface interactions on c-Si(001) at the radiofrequency-powered electrode in low-pressure plasmas: Ex situ spectroscopic ellipsometry and Monte Carlo simulation study Amassian A, Desjardins P, Martinu L
55 - 64	Optical depth profiling of strontium titanate and electro-optic lanthanum-modified lead zirconium titanate multilayer structures for active waveguide applications Amassian A, Gaidi M, Chaker M, Martinu L
65 - 69	Electrical properties of indium-tin oxide films deposited on nonheated substrates using a planar-magnetron sputtering system and a facing-targets sputtering system Iwase H, Hoshi Y, Kameyama M
70 - 73	SiC formation by C-60 molecules as a precursor: A synchrotron-radiation photoemission study of the carbonization process Cheng CP, Pi TW, Ouyang CP, Wen JF
74 - 77	Study of annealed Co thin films deposited by ion beam sputtering Sharma A, Brajpuriya R, Tripathi S, Chaudhari SM
78 - 83	Ge interactions on HfO2 surfaces and kinetically driven patterning of Ge nanocrystals on HfO2 Stanley SK, Joshi SV, Banerjee SK, Ekerdt JG
84 - 90	Rapid thermal oxidation of Ge-rich Si1-xGex heterolayers Bera MK, Chakraborty S, Das R, Dalapati GK, Chattopadhyay S, Samanta SK, Yoo WJ, Chakraborty AK, Butenko Y, Siller L, Hunt MRC, Saha S, Maiti CK
91 - 94	Ultrasensitive leak detection during ultrahigh vacuum evacuation by quadrupole mass spectrometer Chen X, Huang TB, Wang LG, Jin QJ, Cha LZ
95 - 102	How deposition parameters control growth dynamics of nc-Si deposited by hot-wire chemical vapor deposition Moutinho HR, To B, Jiang CS, Xu Y, Nelson BP, Teplin CW, Jones KM, Perkins J, Al-Jassim MM
103 - 105	Low-resistivity atomic-layer-deposited-TaN with atomic-layer-deposited-TaN/physical-vapor-deposited-Ta multilayer structure for multilevel Cu damascene interconnect Furuya A, Ohtsuka N, Ohashi N, Kondo S, Ogawa S
106 - 113	High-rate deposition of MgO by reactive ac pulsed magnetron sputtering in the transition mode Kupfer H, Kleinhempel R, Richter F, Peters C, Krause U, Kopte T, Cheng Y
114 - 125	Spectroscopic study of gas and surface phase chemistries of CF4 plasmas in an inductively coupled modified gaseous electronics conference reactor Zhou B, Joseph EA, Overzet LJ, Goeckner MJ
126 - 132	In situ Fourier transform infrared characterization of the plasma chemistry in varying pulsed cycles of a 1,3-butadiene discharge in an inductively coupled gaseous electronics conference cell Jindal AK, Prengler AJ, Overzet LJ, Goeckner MJ
133 - 140	Effects of N-2, O-2, and Ar plasma treatments on the removal of crystallized HfO2 film Chen JH, Yoo WJ, Chan DSH
141 - 145	Influence of excitonic singlet-triplet splitting on the photoluminescence of Si/SiO2 multiple quantum wells fabricated by remote plasma-enhanced chemical-vapor deposition Rolver R, Forst M, Winkler O, Spangenberg B, Kurz H
146 - 155	Optimization of multilayer wear-resistant thin films using finite element analysis on stiff and compliant substrates Lakkaraju RK, Bobaru F, Rohde SL
156 - 164	Conduction anisotropy in porous thin films with chevron microstructures Vick D, Brett MJ
165 - 169	Characterization of low dielectric constant plasma polymer films deposited by plasma-enhanced chemical vapor deposition using decamethyl-cyclopentasiloxane and cyclohexane as the precursors Yang J, Lee S, Park H, Jung D, Chae H
170 - 173	Effect of assistant rf field on phase composition of iron nitride film prepared by magnetron sputtering process Li WL, Zheng F, Fei WD
174 - 177	Effects of Al content on grain growth of solid solution (Ti,Al)N films Liu ZJ, Shen YG