2769 - 2779 |
Proton intercalation hysteresis in charging and discharging nickel hydroxide electrodes Ta KP, Newman J |
2780 - 2783 |
Vanadium oxide nanotubes - A new nanostructured redox-active material for the electrochemical insertion of lithium Spahr ME, Stoschitzki-Bitterli P, Nesper R, Haas O, Novak P |
2784 - 2793 |
Li-7-NMR of well-graphitized vapor-grown carbon fibers and natural graphite negative electrodes of rechargeable lithium-ion batteries Zaghib K, Tatsumi K, Sawada Y, Higuchi S, Abe H, Ohsaki T |
2794 - 2798 |
Intercalation of lithium ions into graphite electrodes studied by AC impedance measurements Piao T, Park SM, Doh CH, Moon SI |
2799 - 2809 |
An in situ x-ray absorption spectroscopic study of charged Li((1-z))Ni((1+z))O-2 cathode material Mansour AN, McBreen J, Melendres CA |
2810 - 2816 |
Phase behavior of lanthanum strontium manganites Zheng F, Pederson LR |
2817 - 2820 |
Thermodynamic properties of Sr-doped LaMnO3 perovskite in the La-Sr-Mn-O system Zheng F, Pederson LR |
2821 - 2826 |
Effect of electrode and electrolyte modification on the performance of one-chamber solid oxide fuel cell Hibino T, Kuwahara Y, Wang S |
2827 - 2833 |
Gas diffusion impedance in characterization of solid oxide fuel cell anodes Primdahl S, Mogensen M |
2834 - 2840 |
The behavior of MCFCs using Li/K and Li/Na carbonates as the electrolyte at high pressure Yoshikawa M, Mugikura Y, Watanabe T, Ota T, Suzuki A |
2841 - 2844 |
Anode materials for a hydrogen sulfide solid oxide fuel cell Yates C, Winnick J |
2845 - 2848 |
Corrosion properties of electroplated CoNiFe films Saito M, Yamada K, Ohashi K, Yasue Y, Sogawa Y, Osaka T |
2849 - 2852 |
Surface properties of hydroxyl groups in the air-formed oxide film on titanium McCafferty E, Wightman JP, Cromer TF |
2853 - 2862 |
An iteration method for the computation of potential and current distributions at a partially passivated electrode Wang RH, Pickering HW, Xu Y |
2863 - 2869 |
A surface charge model of corrosion pit initiation and of protection by surface alloying McCafferty E |
2870 - 2875 |
Stabilizer concentration and local environment: Their effects on electroless nickel plating of PCB micropads Zhang S, De Baets J, Vereeken M, Vervaet A, Van Calster A |
2876 - 2885 |
Nucleation of metals on aluminum by laser irradiation and the effect on Ni-P electroless deposition Chu SZ, Sakairi M, Saeki I, Takahashi H |
2886 - 2891 |
Anomalous codeposition of iron group metals - I. Experimental results Zech N, Podlaha EJ, Landolt D |
2892 - 2900 |
Anomalous codeposition of iron group metals - II. Mathematical model Zech N, Podlaha EJ, Landolt D |
2901 - 2905 |
The effect of thermophoresis on particle deposition in a tungsten low pressure chemical vapor deposition reactor MacGibbon BS, Busnaina AA, Fardi B |
2906 - 2912 |
The mechanism of bacterial action in the leaching of pyrite by Thiobacillus ferrooxidans Holmes PR, Fowler TA, Crundwell FK |
2913 - 2918 |
Electropolymerization of bithiophene on aluminum surfaces modified by CH3(CH2)(9)-SH and phi-(CH2)(m)-SH, m=0 to 3 Mekhalif Z, Delhalle J, Lang P, Garnier F, Caudano R |
2919 - 2924 |
Evaluation of a ceramic-polymer composite cation-selective membrane for sodium salt splitting Girard F, Izquierdo R, Quenneville E, Bah ST, Paleologou M, Meunier M, Ivanov D, Yelon A |
2925 - 2932 |
The anodic oxidation of p-benzoquinone and maleic acid Bock C, MacDougall B |
2933 - 2939 |
A multisectioned porous electrode for synthesis of D-arabinose Vallieres C, Matlosz M |
2940 - 2947 |
Diffusion effects in localized electrochemical impedance measurements by probe methods Zou F, Thierry D |
2948 - 2953 |
Hydrogen permeability in sintered CeO2 at high temperatures Nigara Y, Kawamura K, Kawada T, Mizusaki J, Ishigame M |
2954 - 2958 |
A double logarithmic method for studying the adsorption effects in an irreversible electrochemical process Zhu YC, Lu YJ, Cheng GJ, Dong SJ |
2959 - 2964 |
Voltammetry studies of single-crystal and polycrystalline diamond electrodes Martin HB, Argoitia A, Angus JC, Landau U |
2965 - 2967 |
Stabilization of wired glucose oxidase anodes rotating at 1000 rpm at 37 degrees C Binyamin G, Heller A |
2968 - 2975 |
The physics of macropore formation in low-doped p-type silicon Lehmann V, Ronnebeck S |
2976 - 2982 |
Reaction of hydrogen/water mixtures on nickel-zirconia cermet electrodes - II. AC polarization characteristics Holtappels P, Vinke IC, de Haart LGJ, Stimming U |
2983 - 2989 |
The removal of low levels of organics from aqueous solutions using Fe(II) and hydrogen peroxide formed in situ at gas diffusion electrodes Harrington T, Pletcher D |
2990 - 2994 |
In situ resistivity measurements and optical transmission and reflection spectroscopy of electrochemically loaded switchable YHx films Kooij ES, van Gogh ATM, Griessen R |
2995 - 2999 |
CaCl2 and MgCl2 as buffering agents for room-temperature chloroaluminate ionic liquids Koronaios P, Osteryoung RA |
3000 - 3003 |
A double logarithmic method in thin-layer spectroelectrochemistry for distinction among mechanisms of an irreversible electrochemical process Zhu YC, Cheng GJ, Dong SJ |
3004 - 3008 |
Chemical mechanical polishing of low-dielectric-constant polymers: Hydrogen silsesquioxane and methyl silsesquioxane Chen WC, Lin SC, Dai BT, Tsai MS |
3009 - 3017 |
Analysis and modeling of low pressure CVD of silicon nitride from a silane-ammonia mixture - I. Experimental study and determination of a gaseous phase mechanism Yacoubi K, Azzaro-Pantel C, Scheid E, Couderc JP |
3018 - 3027 |
Analysis and modeling of low pressure CVD of silicon nitride from a silane-ammonia mixture - II. Deposition modeling Yacoubi K, Azzaro-Pantel C, Couderc JP |
3028 - 3031 |
Transmission electron microscope structural study of Y2O3 films grown on Si(111) substrates by ultrahigh vacuum ionized cluster beam Lee DH, Seong TY, Cho MH, Whang CN |
3032 - 3038 |
Effect of postoxidation annealing on Si/SiO2 interface roughness Chen XD, Gibson JM |
3039 - 3051 |
Growth kinetics and deposition-related properties of subatmospheric pressure chemical vapor deposited borophosphosilicate glass film Vassiliev VY, Zheng JZ, Tang SK, Lu W, Hua J, Lin YS |
3052 - 3057 |
Decomposition of trichlorotrifluoroethane by microwave-induced Ar plasma generated from SiC ceramics under atmospheric pressure Shimizu Y, Akai Y, Hyodo T, Takao Y, Egashira M |
3058 - 3064 |
Nitridation of thin gate or tunnel oxides by nitric oxide Gerardi C, Zonca R, Crivelli B, Alessandri M |
3065 - 3069 |
Influence of retarding hydrogen diffusion in boron phosphosilicate glass on annealing damage of metal-oxide semiconductor transistors Yamaha T, Masuoka F |
3070 - 3078 |
Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - I. Role of implanted BF2 O'Neil PA, Ozturk MC, Batchelor AD, Venables D, Xu MM, Maher DM |
3079 - 3086 |
Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - II. Role of implanted arsenic O'Neil PA, Ozturk MC, Batchelor AD, Venables D, Maher DM |
3087 - 3091 |
Physical modeling of the effect of shearing on the concentration profile in a shear cell Matthiesen DH, Davidson K, Arnold WA |
3092 - 3096 |
Suppression of fluorine penetration by use of in situ stacked chemical vapor deposited tungsten film Chang KM, Deng IC, Lin HY |
3097 - 3100 |
The influence of oxygen on single contact resistance studied by electron energy loss spectroscopy Ruf A, Rucki A, Cerva H, Gehring O, Pahlitzsch J |
3101 - 3104 |
Integration of high dielectric (Ba1-xSrx)TiO3 thin films into new barrier layer electrode structures Lee JC, Choi ES, Yoon SG, Yoon DS, Baik HK |
3105 - 3109 |
Photocapacitive determination of spatial distribution of deep levels at Si/SiO2 interfaces Nishizawa J, Murai A, Oyama Y |
3110 - 3113 |
Electrical conductance characteristics of single-crystal lead iodide grown in gels Unagami T |
3114 - 3118 |
Aqueous cleaning of sidewall redepositions formed by reactive ion etching of platinum Ranpura HM, Butler DH, Chang LH, Tracy CJ, Beaudoin SP |
3119 - 3123 |
Reaction mechanism of low-temperature Cu dry etching using an inductively coupled Cl-2/N-2 plasma with ultraviolet light irradiation Kwon MS, Lee JY |
3124 - 3127 |
An infrared reflection technique for characterization of GaN epitaxial films Bardwell JA, Dharma-wardana MWC, Leathem B, Moisa S, Webb JB, Tam B |
3128 - 3133 |
Electrochemical fabrication of luminescent CaWO4 and CaWO4 : Pb films on W substrates with anodic potential pulses Min KW, Mho SI, Yeo IH |
3134 - 3138 |
Reaction mechanisms in aluminum-indium tin oxide ohmic contact metallization with Co and Ni barrier layers for active-matrix-display applications Saha SK, Howell RS, Hatalis MK |
3139 - 3143 |
Atomic layer epitaxy of tungsten oxide films using oxyfluorides as metal precursors Tagtstrom P, Martensson P, Jansson U, Carlsson JO |