2209 - 2213 |
A study on the origin of nonfaradaic behavior of anodic contact glow discharge electrolysis - The relationship between power dissipated in glow discharges and nonfaradaic yields Sengupta SK, Singh R, Srivastava AK |
2214 - 2218 |
Reactivation of passivated iron electrodes ino magnetic field Wang C, Chen SH, Ma HY |
2219 - 2225 |
Study of the hydrogen evolution reaction on Ni-Mo-P electrodes in alkaline solutions Shervedani RK, Lasia A |
2225 - 2230 |
The electrochromic behavior of indium tin oxide in propylene carbonate solutions Bressers PMMC, Meulenkamp EA |
2231 - 2236 |
Electrochemical deposition of prussian blue from a single ferricyanide solution Yang R, Qian ZB, Deng JQ |
2236 - 2240 |
The effect of nonstoichiometry of surface oxides formed during high temperature oxidation on the corrosion resistance of ferritic chromium steel Zimina T, Oshe E, Dubkov V, Zimin P, Zabrodskaya E |
2241 - 2243 |
Structural and optical characterization of porous 3C-SiC Monguchi T, Fujioka H, Ono K, Oshima M, Serikawa T, Hayashi T, Horiuchi K, Yamashita S, Yoshii K, Baba Y |
2244 - 2252 |
Morphological changes at the interface of the nickel-yttria stabilized zirconia point electrode Aaberg RJ, Tunold R, Mogensen M, Berg RW, Odegard R |
2252 - 2257 |
On the reduction of lithium insertion capacity in hard-carbon anode materials with increasing heat-treatment temperature Buiel E, George AE, Dahn JR |
2258 - 2264 |
Corrosion protection of untreated AA-2024-T3 in chloride solution by a chromate conversion coating monitored with Raman spectroscopy Zhao J, Frankel G, McCreery RL |
2265 - 2275 |
The corrosion of Mo-Al alloys in a H-2/H2S/H2O gas mixture at 800-1000 degrees C Kai W, Bai CY |
2276 - 2284 |
The effect of crevice-opening dimension on the stability of crevice corrosion for nickel in sulfuric acid Abdulsalam MI, Pickering HW |
2285 - 2295 |
Characterization of AA2024-T3 by scanning Kelvin probe force microscopy Schmutz P, Frankel GS |
2295 - 2306 |
Corrosion study of AA2024-T3 by scanning Kelvin probe force microscopy and in situ atomic force microscopy scratching Schmutz P, Frankel GS |
2307 - 2313 |
Impedance studies of the oxygen reduction on thin porous coating rotating platinum electrodes Perez J, Gonzalez ER, Ticianelli EA |
2314 - 2319 |
Electrochemical studies of carbon films from pyrolyzed photoresist Kim J, Song X, Kinoshita K, Madou M, White B |
2320 - 2327 |
Surface studies of CuxCo3-xO4 electrodes for the electrocatalysis of oxygen evolution Fradette N, Marsan B |
2327 - 2334 |
The thermal stability of lithium polymer batteries Song L, Evans JW |
2334 - 2340 |
Spectroelectrochemical studies of indium hexacyanoferrate electrodes prepared by the sacrificial anode method Ho KC, Chen JC |
2340 - 2348 |
Modification of the lithium metal surface by nonionic polyether surfactants : Quartz crystal microbalance studies Mori M, Naruoka Y, Naoi K, Fauteux D |
2348 - 2353 |
Electrochemical synthesis of urea at gas-diffusion electrodes -IV. Simultaneous reduction of carbon dioxide and nitrate ions with various metal catalysts Shibata M, Yoshida K, Furuya N |
2354 - 2358 |
Characterization of high-surface area electrocatalysts using a rotating disk electrode configuration Schmidt TJ, Gasteiger HA, Stab GD, Urban PM, Kolb DM, Behm RJ |
2358 - 2362 |
Water electrolysis using diamond thin-film electrodes Katsuki N, Takahashi E, Toyoda M, Kurosu T, Iida M, Wakita S, Nishiki Y, Shimamune T |
2362 - 2369 |
The mechanism of electropolishing of titanium in methanol-sulfuric acid electrolytes Piotrowski O, Madore C, Landolt D |
2369 - 2377 |
Electrochemical behavior and surface morphologic changes of copper substrates in the presence of 2,5-dimercapto-1,3,4-thiadiazole - In situ EQCM and phase measurement interferometric microscopy Chi QJ, Tatsuma T, Ozaki M, Sotomura T, Oyama N |
2377 - 2380 |
Super dense LiC2 as a high capacity Li intercalation anode Bindra C, Nalimova VA, Sklovsky DE, Benes Z, Fischer JE |
2380 - 2385 |
Photochemical and photoelectrochemical behavior of a novel TiO2/Ni(OH)(2) electrode Kostecki R, Richardson T, McLarnon D |
2386 - 2396 |
Quartz crystal microbalance investigation of electrochemical calcium carbonate scaling Gabrielli C, Keddam M, Khalil A, Maurin G, Perrot H, Rosset R, Zidoune M |
2396 - 2404 |
Passivity and breakdown of carbon steel in organic solvent mixtures of propylene carbonate and dimethoxyethane Shifler DA, Kruger J, Moran PJ |
2404 - 2411 |
The impact of the operation mode on pattern formation in electrode reactions - From potentiostatic to galvanostatic control Mazouz N, Flatgen G, Krischer K, Kevrekidis IG |
2411 - 2418 |
Influence of nitrogen-containing precursors on the electrocatalytic activity of heat-treated Fe(OH)(2) on carbon black for O-2 reduction Cote R, Lalande G, Guay D, Dodelet JP, Denes G |
2419 - 2424 |
Study of the structural change due to heat-treatment in high resistivity electroless NiPC film Osaka T, Higashikawa T, Iizuka A, Takai M, Kim M |
2424 - 2431 |
Prediction of Li intercalation and battery voltages in layered vs. cubic LixCoO2 Wolverton C, Zunger A |
2431 - 2438 |
Gas conversion impedance : A test geometry effect in characterization of solid oxide fuel cell anodes Primdahl S, Mogensen M |
2439 - 2444 |
Changes in the environment of hydrogen in porous silicon with thermal annealing Ogata YH, Kato F, Tsuboi T, Sakka T |
2445 - 2447 |
Room temperature operating solid-state sensor for chlorine gas Niizeki Y, Shibata S |
2448 - 2452 |
Incorporation of cadmium sulfide into nanoporous silicon by sequential chemical deposition from solution Gros-Jean M, Herino R, Lincot D |
2453 - 2456 |
Effect of the gas-phase reaction in metallorganic chemical vapor deposition of TiN from tetrakis(dimethylamido)titanium Yun JY, Park MY, Rhee SW |
2456 - 2460 |
Fibrous and porous microstructure formation in 6H-SiC by anodization in HF solution Shin W, Hikosaka T, Seo WS, Ahn HS, Sawaki N, Koumoto K |
2461 - 2464 |
Dry etching of SrS thin films Lee JW, Davidson MR, Pathangey B, Holloway PH, Pearton SJ |
2465 - 2470 |
Tribochemical reactions of silicon : An in situ infrared spectroscopy characterization Muratov VA, Olsen JE, Gallois BM, Fischer TE, Bean JC |
2471 - 2475 |
High-temperature diffusion of hydrogen and deuterium in titanium and Ti3Al Naito S, Yamamoto M, Doi M, Kimura M |
2475 - 2479 |
Photoluminescence studies of cadmium selenide crystals in contact with group III trialkyl derivatives Winder EJ, Kuech TF, Ellis AB |
2480 - 2485 |
Reduction in contact resistance with in situ O-2 plasma treatment Yonekura K, Sakamori S, Kawai K, Miyatake H |
2486 - 2489 |
Measurements of VOCs with a semiconductor electronic nose Horrillo MC, Getino J, Ares L, Robla JI, Sayago I, Gutierrez FJ |
2489 - 2493 |
Interface states distribution in electrical stressed oxynitrided gate-oxide Belkouch S, Nguyen TK, Landsberger LM, Aktik C, Jean C, Kahrizi M |
2494 - 2498 |
Design of injection feed multiwafer low-pressure chemical vapor deposition reactors Zambov L, Popov C, Ivanov B |
2499 - 2508 |
Aqueous KOH etching of silicon (110) - Etch characteristics and compensation methods for convex corners Kim B, Cho DID |
2508 - 2512 |
Amorphous hydrogenated silicon films for solar cell application obtained with 55 kHz plasma enhanced Chemical vapor deposition Budaguan BG, Sherchenkov AA, Stryahilev DA, Sazonov AY, Radosel'sky AG, Chernomordic VD, Popov AA, Metselaar JW |
2512 - 2516 |
Dry etch patterning of LaCaMnO3 and SmCo thin films Wang JJ, Childress JR, Pearton SJ, Sharifi F, Dahmen KH, Gillman ES, Cadieu FJ, Rani R, Qian XR, Chen L |
2516 - 2522 |
Growth kinetics of chemical vapor deposition of beta-SiC from (CH3)(2)SiCl2/Ar Tago T, Kawase M, Yoshihara Y, Hashimoto K |
2523 - 2529 |
Gravitational stress-induced dislocations in large-diameter silicon wafers studied by X-ray topography and computer simulation Shimizu H, Isomae S, Minowa K, Satoh T, Suzuki T |
2530 - 2534 |
Boron in polycrystalline SixGe1-x films Mangelinck D, Hellberg PE, Zhang SL, d'Heurle FM |
2534 - 2537 |
Enhanced diffusion of boron in Si during doping form borosilicate glass Miyake M |
2538 - 2545 |
Barrier properties of very thin Ta and TaN layers against copper diffusion Wang MT, Lin YC, Chen MC |
2545 - 2548 |
Investigation of boron penetration through thin gate dielectrics including role of nitrogen and fluorine Navi M, Dunham ST |
2548 - 2552 |
Evaporation of oxygen-containing species from boron-doped silicon melts Maeda S, Kato M, Abe K, Nakanishi H, Hoshikawa K, Terashima K |
2552 - 2558 |
Electric properties of [(Zro(2))(0.8)(CeO2)(0.2)](Ca-O)(0.1) solid solution Kawamura K, Watanabe K, Nigara Y, Kaimai A, Kawada T, Mizusaki J |
2558 - 2562 |
Chemical reactions in plasma-assisted chemical vapor deposition of titanium Ohshita Y, Watanabe K |
2563 - 2568 |
High temperature barrier electrode technology for high density ferroelectric memories with stacked capacitor structure Onishi S, Nagata M, Mitarai S, Ito Y, Kudo J, Sakiyama K, Desu SB, Bhatt HD, Vijay DP, Hwang Y |
2569 - 2572 |
Irregular surface and porous structure of SiO2 films deposited at low temperature and low pressure Dultsev FN, Nenasheva LA, Vasilyeva LL |
2572 - 2576 |
Electron field emission from chemical vapor deposited diamond films Obraztsov AN, Pavlovsky IY, Volkov AP, Rakova EV, Nagovitsyn SP |
2576 - 2580 |
SiOF film deposition using FSi(OC2H5)(3) gas in a helicon plasma source Yun SM, Chang HY, Lee KM, Kim DC, Choi CK |
2581 - 2585 |
Growth of III-nitrides on ZnO, LiGaO2, and LiAlO2 substrates MacKenzie JD, Donovan SM, Abernathy CR, Pearton SJ, Holloway PH, Linares R, Zavada J, Chai B |
2585 - 2589 |
Copper dry etching with Cl-2/Ar plasma chemistry Lee JW, Park YD, Childress JR, Pearton SJ, Sharifi F, Ren F |
2589 - 2594 |
Impact of iron contamination and roughness generated in ammonia hydrogen peroxide mixtures (SC1) on 5 nm gate oxides De Gendt S, Knotter DM, Kenis K, Mertens PW, Heyns MM |
2595 - 2601 |
Impact of high-temperature dry local oxidation on gate oxide quality Bellutti P, Zorzi N |
2602 - 2607 |
Detection of metallic contaminants on silicon by surface sensitive minority carrier lifetime measurements Norga GJ, Platero M, Black KA, Reddy AJ, Michel J, Kimerling LC |