L73 - L74 |
A 400 mAh/g aerogel-like V2O5 cathode for rechargeable lithium batteries Coustier F, Passerini S, Smyrl WH |
L75 - L78 |
Influence of residual point defect supersaturation on the formation of grown-in oxide precipitate nuclei in CZ-Si Kissinger G, Vanhellemont J, Lambert U, Graf D, Dornberger E, Richter H |
L79 - L81 |
Improvement of pitting corrosion resistance of type 304 stainless steel by modification of passive film with ultraviolet light irradiation Fujimoto S, Yamada T, Shibata T |
L82 - L84 |
Photoelectrochemical reduction of CO2 at high current densities at p-InP electrodes Hirota K, Tryk DA, Hashimoto K, Okawa M, Fujishima A |
L85 - L88 |
Structural, spectroscopic, and electrochemical characterization of boron-doped diamond films from different provenances Li LF, Totir DA, Vinokur N, Miller B, Chottiner G, Evans EA, Angus JC, Scherson DA |
L88 - L90 |
Selective wet etching of lithium gallate Kropewnicki TJ, Doolittle WA, Carter-Coman C, Kang S, Kohl PA, Jokerst NM, Brown AS |
1415 - 1420 |
Charge-discharge properties of composite of synthetic graphite and poly(3-n-hexylthiophene) as an anode active material in rechargeable lithium-ion batteries Kuwabata S, Tsumura N, Goda S, Martin CR, Yoneyama H |
1421 - 1426 |
The correlation between charge/discharge rates and morphology, surface chemistry, and performance of Li electrodes and the connection to cycle life of practical batteries Aurbach D, Weissman I, Yamin H, Elster E |
1426 - 1430 |
Behavior of silver in physiological solutions Djokic SS, Burrell RE |
1430 - 1434 |
Adhesion mechanism of electroless copper film formed on ceramic substrates using ZnO thin film as an intermediate layer Yoshiki H, Hashimoto K, Fujishima A |
1434 - 1441 |
Evidence for direct gamma-NiOOH <->beta-Ni(OH)(2) transitions during electrochemical cycling of the nickel hydroxide electrode Sac-Epee N, Palacin MR, Delahaye-Vidal A, Chabre Y, Tarascon JM |
1442 - 1449 |
Formation of thin films of CdTe, CdSe, and CdS by electrochemical atomic layer epitaxy Colletti LP, Flowers BH, Stickney JL |
1449 - 1454 |
Utilization of hydrogen sulfide in an intermediate-temperature ceria-based solid oxide fuel cell Peterson DR, Winnick J |
1454 - 1461 |
A neutron reflectivity study of [Os(bipy)(2)(PVP)(10)Cl](+) polymer film modified electrodes : Effect of pH and counterion Wilson RW, Cubitt R, Glidle A, Hillman AR, Saville PM, Vos JG |
1462 - 1469 |
Examination of the role of molybdenum in passivation of stainless steels using AC impedance spectroscopy Jargelius-Pettersson RFA, Pound BG |
1469 - 1477 |
Electrochemical promotion of Pt catalyst electrodes deposited on Na2Zr2Si2PO12 during ethylene oxidation Petrolekas PD, Brosda S, Vayenas CG |
1478 - 1482 |
Evaluation of Zr(Ni,Mn)(2) Laves phase alloys as negative active material for Ni-MH electric vehicle batteries Knosp B, Jordy C, Blanchard P, Berlureau T |
1483 - 1488 |
Electrochemical quartz crystal microbalance studies of polypyrrole growth on self-assembled nucleation sites Wurm DB, Zong K, Kim YH, Kim YT, Shin M, Jeon IC |
1489 - 1501 |
Electrochemical-calorimetric studies of lithium-ion cells Hong JS, Maleki H, Al Hallaj S, Redey L, Selman JR |
1502 - 1506 |
Application of hydrogen diffusion anodes in electrolytic processes using methanol-water mixtures Cabot PL, Centelles M, Segarra L, Casado J |
1506 - 1510 |
Chemical formation of a solid electrolyte interface on the carbon electrode of a Li-Ion cell Scott MG, Whitehead AH, Owen JR |
1511 - 1517 |
Model of cathode reaction resistance in molten carbonate fuel cells Morita H, Mugikura Y, Izaki Y, Watanabe T, Abe T |
1518 - 1520 |
Tuning the position of the redox couples in materials with NASICON structure by anionic substitution Padhi AK, Manivannan V, Goodenough JB |
1521 - 1527 |
Network polymer electrolytes with free chain ends as internal plasticizer Kono M, Hayashi E, Watanabe M |
1527 - 1536 |
Effect of aging on yttria-stabilized zirconia I. A study of its electrochemical properties Kondoh J, Kawashima T, Kikuchi S, Tomii Y, Ito Y |
1536 - 1550 |
Effect of aging on yttria-stabilized zirconia II. A study of the effect of the microstructure on conductivity Kondoh J, Kikuchi S, Tomii Y, Ito Y |
1550 - 1560 |
Effect of aging on yttria-stabilized zirconia III. A study of the effect of local structures on conductivity Kondoh J, Kikuchi S, Tomii Y, Ito Y |
1561 - 1565 |
Blocking inhibitors in cathodic leveling III. Electrochemical impedance spectroscopy study Madore C, Agarwal P, Landolt D |
1566 - 1571 |
The pitting behavior of iron-chromium thin film alloys in hydrochloric acid Ryan MP, Laycock NJ, Newman RC, Isaacs HS |
1571 - 1577 |
Detection of localized corrosion of aluminum alloys using fluorescence microscopy Alodan MA, Smyrl WH |
1578 - 1585 |
Profiles and performance curves in a parallel-plate reactor for the electrochemical fluorination of hydrocarbons Drake JA, Radke CJ, Newman J |
1586 - 1592 |
Transport property and Raman spectroscopic studies of the polymer electrolyte system P(EO)(n)-NaTFSI Ferry A, Doeff MM, De Jonghe LC |
1592 - 1598 |
Anomalous current rise and electrochemical reduction in Fe2O3-TiO2 ceramics Sheng J, Fukami T, Karasawa J |
1598 - 1607 |
Microelectrode evaluation of transition metal-aluminum alloy electrodepositions in chloroaluminate ionic liquids Carlin RT, De Long HC, Fuller J, Trulove PC |
1607 - 1614 |
Amorphous Nb/Fe-oxide ion-storage films for counter electrode applications in electrochromic devices Orel B, Macek M, Lavrencic-Stangar U, Pihlar B |
1614 - 1623 |
An in situ electrochemical quartz crystal microbalance study of the dissolution process of a gold electrode in perchloric acid solution containing chloride ion Ye S, Ishibashi C, Shimazu K, Uosaki K |
1624 - 1631 |
Comparative study of the electrochemical behavior of polycrystalline and nanocrystalline Ru powder in NaOH solution Roue L, Blouin M, Guay D, Schulz R |
1632 - 1639 |
Denuded zone thickness from surface photovoltage measurements -Comparison with microscopy techniques Polignano ML, Brambilla M, Cazzaniga F, Pavia G, Zanderigo F |
1640 - 1644 |
Effect of fluorine on surface morphology in selective epitaxial TiSi2 growth by plasma-enhanced chemical vapor deposition Saito K, Arita Y |
1645 - 1649 |
Ultraclean Si/Si interface formation by surface preparation and direct bonding in ultrahigh vacuum Hermansson K, Grey F, Bengtsson S, Sodervall U |
1649 - 1653 |
Novel low k dielectrics based on diamondlike carbon materials Grill A, Patel V, Jahnes C |
1653 - 1659 |
Optimization of polysilicon encapsulated local oxidation of silicon - Cavity dimension effects on mechanical stress and gate oxide integrity Badenes G, Rooyackers R, Jones SK, Bazley D, Beanland R, De Wolf I, Deferm L |
1659 - 1664 |
Tungsten chemical mechanical polishing Elbel N, Neureither B, Ebersberger B, Lahnor P |
1664 - 1667 |
Field oxide thinning behavior in local oxidation of silicon process under enhanced oxidation conditions Jang SA, Yeo IS, Kim YB |
1668 - 1671 |
A low temperature silicon-on-insulator fabrication process using Si MBE on double-layer porous silicon Zheng DW, Cui Q, Huang YP, Zhang XJ, Kwor R, Li AZ, Tang TA |
1672 - 1677 |
Kinetics of the formation of titanium nitride layers by rapid thermal low pressure chemical vapor deposition from TiCl4-NH3-H-2 Imhoff L, Bouteville A, Remy JC |
1677 - 1679 |
The effect of low-pressure and plasma-enhanced chemical vapor deposited tetraethylorthosilicate oxide film on a boron implant profile Tsang YL, Fitzgibbon G |
1679 - 1683 |
Characterization of high quality nitrided gate dielectric films manufactured in reduced pressure furnace for ultralarge scale integration complementary metal oxide semiconductor applications Yoon G, Epstein Y |
1684 - 1687 |
Excellent electrical characteristics of ultrafine trench isolation Shiozawa K, Oishi T, Maeda H, Murakami T, Yasumura K, Abe Y, Tokuda Y |
1688 - 1692 |
An optical method for monitoring metal contamination during aqueous processing of silicon wafers Chopra D, Suni II |
1692 - 1695 |
Segregation of oxygen at a solid/liquid interface in silicon Kakimoto K, Ozoe H |
1696 - 1701 |
Effect of mixed-conducting interfacial layers on solid oxide fuel cell anode performance Tsai TP, Barnett SA |
1701 - 1708 |
Power measurements for radio-frequency discharges with a parallel-plate-type reactor Kawata H, Kubo T, Yasuda M, Murata K |
1708 - 1714 |
Tribochemical polishing of silicon nitride Hah SR, Fischer TE |
1715 - 1719 |
Quantitative evaluation of precipitated oxygen in silicon by infrared spectroscopy - Still an open problem Sassella A, Borghesi A, Abe T |
1720 - 1723 |
Thickness measurements of epitaxial layers of double epitaxial silicon wafers by far-infrared reflection Shirai H, Akai K, Abe T |
1724 - 1729 |
Effect of surface iron on photoconductivity carrier recombination lifetime of p-type silicon Park HS, Helms CR, Ko DH |
1729 - 1734 |
Deposition temperature dependence of optical gap and coloration efficiency spectrum in electrochromic tungsten oxide films Kubo T, Nishikitani Y |
1735 - 1737 |
Extension of dose window for low-dose separation by implanted oxygen Ogura A |
1738 - 1743 |
The realization of silicon-on-insulator utilizing trench-before-bond and polish stop technology Baine PT, Gay DL, Armstrong BM, Gamble HS |
1744 - 1748 |
Sensing properties of an oxygen sensor using BaCe0.8Gd0.2O3-alpha ceramics as electrolytes Taniguchi N, Yasumoto E, Nakagiri Y, Gamo T |
1748 - 1755 |
Surface states and photovoltaic effects in CdSe quantum dot films Kronik L, Ashkenasy N, Leibovitch M, Fefer E, Shapira Y, Gorer S, Hodes G |
1755 - 1762 |
Ion drift processes in pyrex-type alkali-borosilicate glass during anodic bonding Nitzsche P, Lange K, Schmidt B, Grigull S, Kreissig U, Thomas B, Herzog K |
1762 - 1767 |
Chemical diffusion through grain boundaries in mixed conductors Jamnik J, Maier J |
1767 - 1771 |
Dry etching of deep Si trenches for released resonators in a Cl-2 plasma Weigold JW, Juan WH, Pang SW |
1772 - 1779 |
Steady-state and transient behavior of thick-film tin oxide sensors in the presence of gas mixtures Llobet E, Vilanova X, Brezmes J, Sueiras JE, Alcubilla R, Correig X |
1780 - 1786 |
The effects of dopants and A : B site nonstoichiometry on properties of perovskite-type proton conductors Guan J, Dorris SE, Balachandran U, Liu M |
1786 - 1790 |
Determination of the trap density in amorphous silicon by quasi-static capacitance-voltage measurements Fahrner WR, Loffler S, Chan Y, Kwong S, Man K |
1790 - 1794 |
Substrate effects on hardness and polishing of SiO2 thin films Kallingal CG, Tomozawa M, Murarka SP |
1795 - 1800 |
Recombination centers created by Ar+-ion implantation into SIMOX substrates Takahashi M, Sakakibara Y, Ohno T |