Journal of the Electrochemical Society

Journal of the Electrochemical Society, Vol.146, No.1 Entire volume, number list

ISSN: 0013-4651 (Print)

In this Issue (66 articles)

1 - 7	Effect of ionic conductivity of zirconia electrolytes on the polarization behavior of various cathodes in solid oxide fuel cells Uchida H, Yoshida M, Watanabe M
15 - 19	Site preference of cobalt and deuterium in the structure of a complex AB(5) alloy electrode - A neutron powder diffraction study Vogt T, Reilly JJ, Johnson JR, Adzic GD, McBreen J
20 - 26	Nickel/metal hydride secondary batteries using an alkaline solid polymer electrolyte Vassal N, Salmon E, Fauvarque JF
27 - 31	Proton polymeric gel electrolyte membranes based on polymethylmethacrylate Grillone AM, Panero S, Retamal BA, Scrosati B
32 - 37	Rubbery block copolymer electrolytes for solid-state rechargeable lithium batteries Soo PP, Huang BY, Jang YI, Chiang YM, Sadoway DR, Mayes AM
38 - 45	Multicomponent transport in porous electrodes of proton exchange membrane fuel cells using the interdigitated gas distributors Yi JS, Van Nguyen T
46 - 48	Effects of surface treatment with boiling alkaline solution on electrochemical and physicochemical properties of the Zr0.9Ti0.1Ni1.1Co0.1Mn0.6V0.2 alloy electrode Choi WK, Yamataka K, Zhang SG, Inoue H, Iwakura C
49 - 53	Spin trapping study of gradual decomposition of electrolyte solutions for lithium secondary batteries Endo E, Ata M, Sekai K, Tanaka K
54 - 58	Mechanism of formation of dense anodic films of PbO on lead and lead alloys in sulfuric acid - Use of an O-18 tracer Rocca E, Steinmetz J, Weber S
59 - 68	On the aggregation of tin in SnO composite glasses caused by the reversible reaction with lithium Courtney IA, McKinnon WR, Dahn JR
69 - 78	Polarization effects in intermediate temperature, anode-supported solid oxide fuel cells Kim JW, Virkar AV, Fung KZ, Mehta K, Singhal SC
79 - 82	Zinc-substituted alpha-nickel hydroxide as an electrode material for alkaline secondary cells Dixit M, Kamath PV, Gopalakrishnan J
83 - 90	Corrosion rate of n- and p-silicon substrates in HF, HF+HCl, and HF+NH4F aqueous solutions Bertagna V, Erre R, Rouelle F, Chemla M
91 - 97	Corrosion pits in thin films of stainless steel Ryan MP, Laycock NJ, Isaacs HS, Newman RC
98 - 102	Copper redistribution during corrosion of aluminum alloys Dimitrov N, Mann JA, Sieradzki K
103 - 110	Kinetic modeling and dopant effect on silicon deposition - Low pressure and plasma assisted chemical vapor deposition Masi M, Zonca R, Carra S
111 - 116	A mathematical model for electroless copper deposition on planar substrates Ramasubramanian M, Popov BN, White RE, Chen KS
117 - 124	Development of a continuous-flow system for the growth of compound semiconductor thin films via electrochemical atomic layer epitaxy Villegas I, Napolitano P
125 - 130	Cathodic and anodic deposition of mercury and silver at boron-doped diamond electrodes Vinokur N, Miller B, Avyigal Y, Kalish R
131 - 136	Low-resistance contacts with chemical vapor deposited tungsten on GaAs grown by molecular layer epitaxy Oyama Y, Plotka P, Matsumoto F, Kurabayashia T, Hamano T, Kikuchi H, Nishizawa J
137 - 140	The deposition and crystallization behaviors of electroless Ni-Cu-P deposits Chen CJ, Lin KL
141 - 149	Electrochemical nanostructuring of n-Si(111) single-crystal faces Potzschke RT, Staikov G, Lorenz WJ, Wiesbeck W
150 - 155	Junction formation studies of one-step electrodeposited CuInSe2 on CdS Kampmann A, Cowache P, Lincot D, Vedel J
156 - 159	Electrochemical deposition of ZnO thin films on tin-coated glasses Gu ZH, Fahidy TZ
160 - 166	Mechanism of direct copper plating on nonconducting substrates Ono S, Osaka T, Naitoh K, Nakagishi Y
167 - 169	Influence of SiH2Cl2 on the kinetics of the chemical vapor deposition of tungsten by SiH4 reduction of WF6 Jongste JF, Oosterlaken TGM, Janssen GCAM, Radelaar S
170 - 176	Tantalum nitride films grown by inorganic low temperature thermal chemical vapor deposition - Diffusion barrier properties in copper metallization Kaloyeros AE, Chen XM, Stark T, Kumar K, Seo S, Peterson GG, Frisch HL, Arkles B, Sullivan J
177 - 183	Electrodeposition of copper-selenium compounds onto gold using a rotating electrochemical quartz crystal microbalance Marlot A, Vedel J
184 - 188	Chemical vapor deposition of silicon carbide whiskers activated by elemental nickel Leu IC, Hon MH, Lu YM
189 - 193	Controlled electrical conductivity in SnO2 thin films by oxygen or hydrocarbon assisted atomic layer epitaxy Utriainen M, Kovacs K, Campbell JM, Niinisto L, Reti F
194 - 198	Programmable ward-wiring of circuitry using spatially coupled bipolar electrochemistry Bradley JC, Ma ZM, Clark E, Crawford J, Stephens SG
199 - 207	Electrochemical destruction of dilute cyanide by copper-catalyzed oxidation in a flow-through porous electrode Hofseth CS, Chapman TW
208 - 213	Electrochemical removal of lead ions from flowing electrolytes using packed bed electrodes El-Deab MS, Saleh MM, El-Anadouli BE, Ateya BG
214 - 219	Polymerization of dimethylaminoethylmethacrylate-methyl chloride initiated by a sacrificial anode Lin TY, Chou TC
220 - 225	Morphology, microstructure, and electrocatalylic properties of RuO2-SnO2 thin films Nanni L, Polizzi S, Benedetti A, De Battisti A
226 - 231	Electrochemical behavior of polypyrrole-molybdenum trisulfide-tetrathiomolybdate electrode in nonaqueous media Garcia B, Roy F, Belanger D
232 - 242	Ex situ and in situ infrared spectroelectrochemical investigations of V2O5 crystalline films Surca A, Orel B, Drazic G, Pihlar B
243 - 249	Bicomponent WO3/TiO2 films as photoelectrodes Shiyanovskaya I, Hepel M
250 - 255	Potential-dependent adsorption/desorption of organic adsorbate at HOPG electrode and accompanying delamination of graphite surface He YF, Wang Y, Zhu GY, Wang E
256 - 260	Impedance spectra of the reduction of adrenochrome Zhang ZJ, Huang J, Wu XZ, Zhang WZ, Chen SY
261 - 265	Photoelectrochemistry of highly Zn-doped pyrite as compared with isostructural FeS2 Buker K, Fiechter S, Eyert V, Tributsch H
266 - 269	Leakage current mechanism of metal-Ta2O5-metal capacitors for memory device applications Lai BCM, Lee JYM
270 - 275	Control of the slope of field oxide edge and its effects on gate oxide reliability Jang SA, Kim YB, Yeo IS, Lee SK
276 - 280	Fourier transform infrared characterization of downstream gas-phase species generated by tetraethylorthosilicate/ozone atmospheric pressure reactions Arno J, Yuan Z, Murphy S
281 - 285	Optimized process conditions for high quality gate oxides on SIMOX SOI substrates Seo JH, Woo JC, Maszara WP
286 - 291	High sensitivity determination of oxygen distribution in thin epitaxial silicon films by carbon implantation-photoluminescence measurement Nakamura M, Inoue Y, Sakurai Y
292 - 295	Surface photovoltage measurement of hydrogen-treated Si surfaces Nauka K, Kamins TI
296 - 298	In situ infrared reflection absorption spectroscopy of materials formed on SiO2 in inductively coupled plasma etching chamber Kawada H, Kitsunai H, Tsumaki N
299 - 305	Crystallization of a-Si : H on glass for active layers in thin film transistors - Effects of glass coating Wang YZ, Fonash SJ, Awadelkarim OO, Gu T
306 - 312	Electronic and structural properties of partially crystallized silicon produced by solid-phase crystallization of As-deposited amorphous silicon Smith JP, Eccleston W, Brown PD, Humphreys CJ
313 - 320	Elymat measurement of intentionally contaminated and dry etched wafers Wittmann J, Bergholz W, Hoffmann H
321 - 326	Effects controlling initiation and termination of gas-phase cleaning reactions Staffa J, Fakhouri S, Brubaker M, Roman P, Ruzyllo J
327 - 330	Roughness reduction of 3C-SiC surfaces using SiC-based mechanical polishing slurries Yasseen AA, Zorman CA, Mehregany M
331 - 335	Boron autodoping in single-wafer epitaxy of silicon at reduced pressure Jerier P, Dutartre D
336 - 338	Sb diffusion in heavily doped Si substrates Suzuki K, Tashiro H, Aoyama T
339 - 349	Characterization of a time multiplexed inductively coupled plasma etcher Ayon AA, Braff R, Lin CC, Sawin HH, Schmidt MA
350 - 358	Expression of the Si etch rate in a CF4 plasma with four internal process variables Cho BO, Hwang SW, Kim IW, Moon SH
359 - 363	Impact of processing parameters on leakage current and defect behavior of n(+)p silicon junction diodes Gramenova E, Jansen P, Simoen E, Vanhellemont J, Dupas L, Deferm L
364 - 366	Investigation of the mechanical strength of hydrogen-annealed Czochralski silicon wafers Sueoka K, Akatsuka M, Katahama H, Adachi N
367 - 371	Inactivation of low-dose implanted phosphorus pileup in the silicon side of an Si/SiO2 interface after oxidation Sato H, Yanagisawa Y, Ogasawara M, Kojima H, Masuda H, Natsuaki N
372 - 375	Structure of As-prepared and annealed porous silicon surfaces studied by nuclear magnetic resonance spectroscopy Tsuboi T, Sakka T, Ogata YH
376 - 381	Investigation of the kinetics of tungsten chemical mechanical polishing in potassium iodate-based slurries - I. Role of alumina and potassium iodate Stein DJ, Hetherington DL, Cecchi JL
382 - 386	Detection of propylene using two zirconia-based electrochemical cells Hibino T, Kuwahara Y, Wang SG
387 - 391	The effects of structural properties on gas sensing performance of the metal-insulator-semiconductor hydrogen gas sensor Gurbuz Y, Kang WP, Davidson JL, Kerns DV
392 - 399	Firing technique for preparing a BaMgAl10O17 : Eu2+ phosphor with controlled particle shape and size Oshio S, Kitamura K, Shigeta T, Horii S, Matsuoka T, Tanaka S, Kobayashi H
400 - 404	Glass-to-glass bonding for vacuum packaging of field emission display in an ultra-high-vacuum chamber using silicon thin film Choi WB, Ju BK, Lee YH, Jeong SJ, Lee NY, Sung MY, Oh MH