| 1153 - 1160 |
Quantum-wire effects in trigate SOI MOSFETs
Colinge JP |
| 1161 - 1171 |
Wideband characterization of SOI materials and devices
Raskin JP |
| 1172 - 1179 |
High quality Germanium-On-Insulator wafers with excellent hole mobility
Nguyen QT, Damlencourt JF, Vincent B, Clavelier L, Morand Y, Gentil P, Cristoloveanu S |
| 1180 - 1184 |
Temperature impact on the Lorentzian noise induced by electron valence-band tunneling in partially depleted SOI p-MOSFETs
Guo W, Cretu B, Routoure JM, Carin R, Simoen E, Claeys C |
| 1185 - 1193 |
Specific features of multiple-gate MOSFET threshold voltage and subthreshold slope behavior at high temperatures
Kilchytska V, Collaert N, Jurczak M, Flandre D |
| 1194 - 1200 |
Analysis of uniaxial and biaxial strain impact on the linearity of fully depleted SOI nMOSFETs
Pavanello MA, Martino JA, Simoen E, Claeys C |
| 1201 - 1210 |
Gate induced floating body effects in TiN/SiON and TiN/HfO2 gate stack triple gate SOI nFinFETs
Rafi JM, Simoen E, Mercha A, Collaert N, Hayama K, Campabadal F, Claeys C |
| 1211 - 1215 |
Calculation of the phonon-limited mobility in silicon gate all-around MOSFETs
Godoy A, Ruiz F, Sampedro C, Gamiz F, Ravaioli U |
| 1216 - 1220 |
Monte Carlo simulation of Hall and magnetoresistance mobility in SOI devices
Donetti L, Gamiz F, Cristoloveanu S |
| 1221 - 1228 |
Optimisation of trench isolated bipolar transistors on SOI substrates by 3D electro-thermal simulations
Nigrin S, Armstrong GA, Kranti A |
| 1229 - 1237 |
Characterization of FD SOI devices and VCO's on thin dielectric membranes under pressure
Olbrechts B, Rue B, Suski J, Flandre D, Raskin JP |
| 1238 - 1244 |
Electrical characterization of true Silicon-On-Nothing MOSFETs fabricated by Si layer transfer over a pre-etched cavity
Kilchytska V, Chung TM, Olbrechts B, Vovk Y, Raskin JP, Flandre D |
| 1245 - 1249 |
Electrical characteristics and simulations of self-switching-diodes in SOI technology
Farhi G, Saracco E, Beerens J, Morris D, Charlebois SA, Raskin JP |
