| 741 - 744 |
Al2O3 tunnel barrier as a good candidate for spin injection into silicon
Benabderrahmane R, Kanoun M, Bruyant N, Baraduc C, Bsiesy A, Achard H |
| 745 - 753 |
Influence of layout design and on-wafer heatspreaders on the thermal behavior of fully-isolated bipolar transistors: Part I - Static analysis
Russo S, La Spina L, d'Alessandro V, Rinaldi N, Nanver LK |
| 754 - 762 |
Influence of layout design and on-wafer heatspreaders on the thermal behavior of fully-isolated bipolar transistors: Part II - Dynamic analysis
Russo S, La Spina L, d'Alessandro V, Rinaldi N, Nanver LK |
| 763 - 768 |
Al0.2Ga0.8As/In0.15Ga0.85As MOSPHEMT with low temperature LPD-deposited Al2O3 as gate dielectric
Basu S, Singh PK, Sze PW, Wang YH |
| 769 - 776 |
Thermal analysis of short wavelength InGaAs/InAlAs quantum cascade lasers
Lee HK, Yu JS |
| 777 - 780 |
Direct measurement of electron beam induced currents in p-type silicon
Han MG, Zhu YM, Sasaki K, Kato T, Fisher CAJ, Hirayama T |
| 781 - 786 |
Light-emitting diode quality investigation via low-frequency noise characteristics
Palenskis V, Matukas J, Pralgauskaite S |
| 787 - 790 |
Studies on vacuum deposited p-ZnTe/n-ZnSe heterojunction diodes
Rao GK, Bangera KV, Shivakumar GK |
| 791 - 795 |
A generic numerical model for detection of terahertz radiation in MOS field-effect transistors
Wang YL, Yan ZF, Zhu JX, Zhang LN, Lin XN, He J, Cao JC, Chan MS |
| 796 - 800 |
Statistical modeling of inter-device correlations with BPV
Stevanovic I, Li X, McAndrew CC, Green KR, Gildenblat G |
| 801 - 805 |
Inhomogeneous injection in polar and nonpolar III-nitride light-emitters
Kisin MV, El-Ghoroury HS |
| 806 - 808 |
Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET
Zhang LN, Ma CY, He J, Lin XN, Chan MS |
