| 675 - 679 |
Effects of fluorine incorporation on the properties of Ge p-MOS capacitors with HfTiON dielectric
Li CX, Leung CH, Lai PT, Xu JP |
| 680 - 684 |
On the piezoelectric coupling constant of epitaxial Mg-doped GaN
Xu X, Woods RC |
| 685 - 688 |
High voltage REBULF LDMOS with N+ buried layer
Duan BX, Yang YT, Zhang B |
| 689 - 695 |
Extracting the Schottky barrier height from axial contacts to semiconductor nanowires
Sarpatwari K, Dellas NS, Awadelkarim OO, Mohney SE |
| 696 - 700 |
Large-signal model for AlGaN/GaN HEMTs suitable for RF switching-mode power amplifiers design
Jarndal A, Aflaki P, Degachi L, Birafane A, Kouki A, Negra R, Ghannouchi FM |
| 701 - 709 |
Ni-Au contacts to p-type GaN - Structure and properties
Smalc-Koziorowska J, Grzanka S, Litwin-Staszewska E, Piotrzkowski R, Nowak G, Leszczynski M, Perlin P, Talik E, Kozubowski J, Krukowski S |
| 710 - 714 |
Effects of thermal annealing on structure, morphology and electrical properties of F16CuPc/alpha 6T heterojunction thin films
Ye RB, Baba M, Ohta K, Suzuki K |
| 715 - 719 |
Interface and electrical properties of La-silicate for direct contact of high-k with silicon
Kakushima K, Tachi K, Adachi M, Okamoto K, Sato S, Song J, Kawanago T, Ahmet P, Tsutsui K, Sugii N, Hattori T, Iwai H |
| 720 - 723 |
Characterization of flatband voltage roll-off and roll-up behavior in La2O3/silicate gate dielectric
Kakushima K, Koyanagi T, Tachi K, Song J, Ahmet P, Tsutsui K, Sugii N, Hattori T, Iwai H |
| 724 - 727 |
Formation of 30-V power DMOSFET's by implementing p-counter-doped region within n-type drift layer
Juang MH, Hwang CC, Shye DC, Wang JL, Jang SL |
| 728 - 731 |
The direct evidence of substrate potential propagation in a gate-grounded NMOS
Yang DH, Chen JF, Wu KM, Shih JR, Lee JH |
| 732 - 735 |
Low-resistivity Ni/Pt Ohmic contacts to p-type N-doped ZnO
Lu YF, Ye ZZ, Zeng YJ, Zhu LP, Huang JY, Zhao BH |
| 736 - 740 |
Ambient temperature characteristics of Schottky contacts on 4H-SiC aged in air at 350 degrees C
Adedeji AV, Ahyi AC, Williams JR, Mohney SE, Scofield JD |
