Solid-State Electronics

Solid-State Electronics, Vol.50, No.6 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (42 articles)

901 - 901	Special issue: ISMS 2005 - Foreword Iliadis AA, Thompson PE
902 - 907	High performance InP/InAlAs/GaAsSb/InP double heterojunction bipolar transistors Cho SW, Yun JH, Jun D, Song JI, Adesida I, Pan N, Jang JH
908 - 913	Novel reconfigurable semiconductor photonic crystal-MEMS device Zhou WM, Mackie DM, Taysing-Lara M, Dang G, Newman PG, Svensson S
914 - 919	25-nm programmable virtual source/drain MOSFETs using a twin SONOS memory structure Choi WY, Choi BY, Kim DW, Lee CH, Park D, Lee JD, Park BG
920 - 923	Study of leakage-induced photon emission processes in sub-90 nm CMOS devices Weizman Y, Gurfinkel M, Margulis A, Fefer Y, Shapira Y, Baruch E
924 - 928	A novel tri-control gate surrounding gate transistor(TCG-SGT) nonvolatile memory cell for flash memory Ohba T, Nakamura H, Sakuraba H, Masuoka F
929 - 934	Worst case stress conditions for hot carrier induced degradation of p-channel SOI MOSFETs Ioannou DP, Mishra R, Ioannou DE, Liu ST, Hughes HL
935 - 942	Influence of SOI-generated stress on BiCMOS performance Johansson T, Malin BG, Norstrom H, Smith U, Ostling M
943 - 950	Large-signal modeling of SOI MESFETs Balijepalli A, Vijayaraghavan R, Ervin J, Yang J, Islam SK, Thornton TJ
951 - 958	CMOS and post-CMOS on-chip microwave pulse power detectors Jeon W, Melngailis J
959 - 963	CMOS reliability issues for emerging cryogenic Lunar electronics applications Chen TB, Zhu CD, Najafizadeh L, Jun B, Ahmed A, Diestelhorst R, Espinel G, Cressler JD
964 - 972	Analysis and understanding of unique cryogenic phenomena in state-of-the-art SiGeHBTs Liang QQ, Krithivasan R, Ahmed A, Lu Y, Li Y, Cressler JD, Niu GF, Rieh JS, Freeman G, Ahlgren D, Joseph A
973 - 978	Integration of Si/SiGe HBT and Si-based RITD demonstrating controllable negative differential resistance for wireless applications Chung SY, Park SY, Daulton JW, Yu RH, Berger PR, Thompson PE
979 - 985	CMOS integration of epitaxial Gd2O3 high-k gate dielectrics Gottlob HDB, Echtermeyer T, Mollenhauer T, Efavi JK, Schmidt M, Wahlbrink T, Lemme MC, Kurz H, Czernohorsky M, Bugiel E, Osten HJ, Fissel A
986 - 991	Physical and electrical characteristics of high-kappa gate dielectric Hf(1-x)LaxOy Wang XP, Li MF, Chin A, Zhu CX, Shao J, Lu W, Shen XC, Yu XF, Chi R, Shen C, Huan ACH, Pan JS, Du AY, Lo P, Chan DSH, Kwong DL
992 - 998	Gate electrode effects on low-frequency (1/f) noise in p-MOSFETs with high-kappa dielectrics Srinivasan P, Simoen E, Singanamalla R, Yu HY, Claeys C, Misra D
999 - 1003	Highly reliable high-k gate dielectrics with gradual Hf-profile in the HfO2/SiO2 interface region Iwamoto K, Mizubayashi W, Ogawa A, Nabatame T, Satake H, Toriumi A
1004 - 1011	Dramatic reduction of gate leakage current of ultrathin oxides through oxide structure modification Chen Z, Guo J
1012 - 1015	Current-transport properties of atomic-layer-depo sited ultrathin Al2O3 on GaAs Lin HC, Ye PD, Wilk GD
1016 - 1023	Novel dielectrics for gate oxides and surface passivation on GaN Gila BP, Thaler GT, Onstine AH, Hlad M, Gerger A, Herrero A, Allums KK, Stodilka D, Jang S, Kang B, Anderson T, Abernathy CR, Ren F, Pearton SJ
1024 - 1029	Electrical characteristic enhancement of metal-oxide-semiconductor devices by incorporating WON buffer layer at HfTaSiON/Si interface Cheng CL, Chang-Liao KS, Chang HC, Wang TK
1030 - 1034	Fully integrated 512 Mb DRAMs with HSG-merged-AHO cylinder capacitor Kim SG, Hyun CS, Park D, Cho TH, Suk JG, Hong HS, Lee KY, Oh KS
1035 - 1040	Annealing of ion-implanted SiC by laser-pulse-exposure-generated shock-waves Mulpuri KB, Qadri SB, Grun J, Manka CK, Ridgway MC
1041 - 1045	Schottky barrier height in GaN/AlGaN heterostructures Anwar AFM, Faraclas EW
1046 - 1050	Monitoring the self-heating in a high frequency GaNHFET McAlister SP, Bardwell JA, Haffouz S, Tang H
1051 - 1056	AlGaN/GaN HEMTs: Experiment and simulation of DC characteristics Faraclas EW, Anwar AFM
1057 - 1061	High breakdown voltage AlGaN/GaN MIS-HEMT with SiN and TiO2 gate insulator Yagi S, Shimizu M, Inada M, Yamamoto Y, Piao G, Okumura H, Yano Y, Akutsu N, Ohashi H
1062 - 1072	Breaking the theoretical limit of SiC unipolar power device - A simulation study Yu LC, Sheng K
1073 - 1079	High temperature characterization of SiCBJTs for power switching applications Sheng K, Yu LC, Zhang J, Zhao JH
1080 - 1087	Polysilicon TFT circuits on flexible stainless steel foils Troccoli MN, Roudbari AJ, Chuang TK, Hatalis MK
1088 - 1096	Interface characterization of molecular-monolayer/SiO2 based molecular junctions Richter CA, Hacker CA, Richter LJ, Kirillov OA, Suehle JS, Vogel EM
1097 - 1104	Modeling observed capacitance-voltage hysteresis in metal-SiO2-thin film organic semiconductor devices Niemann D, Gunther N, Kwong C, Barycza M, Rahman M
1105 - 1112	Structural and rectifying junction properties of self-assembled ZnO nanoparticles in polystyrene diblock copolymers on (100)Si substrates Ali HA, Iliadis AA, Martinez-Miranda LJ, Lee U
1113 - 1118	Development of high frequency ZnO/SiO2/Si Love mode surface acoustic wave devices Krishnamoorthy S, Iliadis AA
1119 - 1123	Role of low O-2 pressure and growth temperature on electrical transport of PLD grown ZnO thin films on Si substrates Pandis C, Brilis N, Tsamakis D, Ali HA, Krishnamoorthy S, Iliadis AA
1124 - 1127	Microstructural characterization of quantum dots with type-II band alignments Sarney WL, Little JW, Svensson SP
1128 - 1136	Efficient THz generation and frequency upconversion in GaP crystals Ding YJ, Shi W
1137 - 1140	Room temperature lasing of GaAs quantum wire vertical-cavity surface-emitting lasers grown on (775)B GaAs substrates by molecular beam epitaxy Higuchi Y, Osaki S, Kitada T, Shimomura S, Takasuka Y, Ogura M, Hiyamizu S
1141 - 1149	Bandwidth enhancement of Fabry-Perot quantum-well lasers by injection-locking Jin XM, Chuang SL
1150 - 1155	Two-dimensional quantum mechanical modeling for multiple-channel FET Kim JS, Won T
1156 - 1163	Gate line edge roughness amplitude and frequency variation effects on intra die MOS device characteristics Hamadeh E, Gunther NG, Niemann D, Rahman M
1164 - 1169	Quantum mechanical modeling of MOSFET gate leakage for high-k gate dielectrics Wu HX, Zhao Y, White MH