| 401 - 401 |
SPECIAL ISSUE WITH PAPERS SELECTED FROM THE ULTIMATE INTEGRATION ON SILICON CONFERENCE, ULIS 2008 Foreword
Selmi L, Esseni D, Palestri P |
| 402 - 410 |
Low-voltage scaling limitations for nano-scale CMOS LSIs
Itoh K, Horiguchi M |
| 411 - 417 |
Innovative devices for integrated circuits - A design perspective
Schmitt-Landsiedel D, Werner C |
| 418 - 423 |
Impact of variability on the performance of SOI Schottky barrier MOSFETs
Feste SF, Zhang M, Knoch J, Mantl S |
| 424 - 432 |
Multi-Subband Monte Carlo simulations of I-ON degradation due to fin thickness fluctuations in FinFETs
Serra N, Palestri P, Smit GDJ, Selmi L |
| 433 - 437 |
High frequency performance of sub-100 nm UTB-FDSOI featuring TiN/HfO2 gate stack
Lim TC, Rozeau O, Buj C, Paccaud M, Lepilliet S, Dambrine G, Danneville F |
| 438 - 444 |
Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures
Monaghan S, Hurley PK, Cherkaoui K, Negara MA, Schenk A |
| 445 - 451 |
Simulation of self-heating effects in different SOI MOS architectures
Braccioli M, Curatola G, Yang Y, Sangiorgi E, Fiegna C |
| 452 - 461 |
On the validity of the effective mass approximation and the Luttinger k.p model in fully depleted SOI MOSFETs
Rideau D, Feraille M, Michaillat M, Niquet YM, Tavernier C, Jaouen H |
| 462 - 467 |
Tight-binding and effective mass modeling of armchair graphene nanoribbon FETs
Grassi R, Poli S, Gnani E, Gnudi A, Reggiani S, Baccarani G |
