Solid-State Electronics

Solid-State Electronics, Vol.51, No.3 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (27 articles)

343 - 346	Dual-channel 4H-SiC metal semiconductor field effect transistors Zhu CL, Rusli, Zhao P
347 - 353	Analytical threshold voltage model with TCAD simulation verification for design and evaluation of tri-gate MOSFETs Jin YW, Zeng C, Ma L, Barlage D
354 - 359	Investigation of source-follower type analog buffer using low temperature poly-Si TFTs Chen BT, Tai YH, Wei YJ, Wei KF, Tsai CC, Huang CY, Kuo YJ, Cheng HC
360 - 365	A unified circuit model for static and dynamic analyses of semiconductor optical amplifiers and laser diodes Jou JJ, Liu CK, Lee SL
366 - 370	Surface roughness of silicon oxynitride etching in C2F6 inductively coupled plasma Kim B, Lee BT, Han JG
371 - 375	Structural and electrical properties of metal-ferroelectric-insulator-semiconductor transistors using a Pt/Bi3.25Nd0.75Ti3O12/Y2O3/Si structure Tang MH, Zhou YC, Zheng XJ, Yan Z, Cheng CP, Ye Z, Hu ZS
376 - 380	Optimal distance between current collecting electrodes of the solar cells Georgiev SS
381 - 386	The influence of ohmic back contacts on the properties of a-Si : H Schottky diodes Ay I, Tolunay H
387 - 393	A new analytical threshold voltage model for symmetrical double-gate MOSFETs with high-k gate dielectrics Chiang TK, Chen ML
394 - 397	A novel high voltage LDMOS for HVIC with the multiple step shaped equipotential rings Chen WJ, Zhang B, Li ZJ, Liu Z
398 - 404	Impact of graded channel (GC) design in fully depleted cylindrical/surrounding gate MOSFET (FD CGT/SGT) for improved short channel immunity and hot carrier reliability Kaur H, Kabra S, Bindra S, Haldar S, Gupta RS
405 - 413	Integrated RF inductors with micro-patterned NiFe core Zhuang Y, Vroubel M, Rejaei B, Burghartz JN
414 - 422	Analytical predictive modeling for the study of the scalability limits of multiple gate MOSFETs El-Hamid HA, Roig J, Iniguez B
423 - 427	Fabrication and performance of optoelectronic devices with metal/diamond-like carbon Schottky contact Cheng X, Zhang MY, Chen XH, Chen C
428 - 432	1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz Wang XL, Cheng TS, Ma ZY, Hu G, Xiao HL, Ran JX, Wang CM, Luo WJ
433 - 444	BSIM5: An advanced charge-based MOSFET model for nanoscale VLSI circuit simulation He J, Xi XM, Wan H, Dunga M, Chan M, Niknejad AM
445 - 448	Influence of traps on charge transport in organic semiconductors Li L, Meller G, Kosina H
449 - 459	Modelling and measurements of the parasitic electrostatic capacitances in Si/SiGe n-HFET Zerounian N, Enciso-Aguilar M, Hackbarth T, Herzog HJ, Aniel F
460 - 465	Low resistivity ohmic contact to n-type poly-GaN using a Ti/Au/Ni/Au multilayer metal system Uen WY, Li ZY, Lan SM, Yang TN, Chen YW, Liao SM
466 - 474	Transfer matrix method modelling of inhomogeneous Schottky barrier diodes on silicon carbide Furno M, Bonani F, Ghione G
475 - 480	Trapping characteristics of lanthanum oxide gate dielectric film explored from temperature dependent current-voltage and capacitance-voltage measurements Sen B, Wong H, Molina J, Iwai H, Ng JA, Kakushima K, Sarkar CK
481 - 488	Impact of intrinsic parameter fluctuations on the performance of HEMTs studied with a 3D parallel drift-diffusion simulator Seoane N, Garcia-Loureiro AJ, Kalna K, Asenov A
489 - 492	Towards a silicon laser based on emissive structural defects Yukhnevich AV
493 - 499	A new structure and its analytical model for the electric field and breakdown voltage of SOI high voltage device with variable-k dielectric buried layer Luo XR, Zhang B, Li ZJ
500 - 504	Color tunable organic light emitting diodes using Eu complex doping Li WX, Hagen J, Jones R, Heikenfeld J, Steckl AJ
505 - 510	Device design guidelines for nano-scale MuGFETs Lee CW, Yun SRN, Yu CG, Park JT, Colinge JP
511 - 516	A comprehensive four parameters I-V model for GaAs MESFET output characteristics Memon NM, Ahmed MM, Rehman F