Solid-State Electronics

Solid-State Electronics, Vol.44, No.2 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (23 articles)

193 - 193	Special issue - Proceedings of the workshop on wide bandgap bipolar devices - January 24-28, 1999 - Marriott Bay Point Resort Village -Panama City Beach, FL - Preface Brown A, Zolper JC
195 - 204	Materials theory based modeling of wide band gap semiconductors: from basic properties to devices Brennan KF, Bellotti E, Farahmand M, Haralson J, Ruden PP, Albrecht JD, Sutandi A
205 - 210	Two-dimensional hole gas induced by piezoelectric and pyroelectric charges Shur MS, Bykhovski AD, Gaska R
211 - 219	Enhancement of base conductivity via the piezoelectric effect in AlGaN/GaN HBTs Asbeck PM, Yu ET, Lau SS, Sun W, Dang X, Shi C
221 - 228	The values of minority carrier diffusion lengths and lifetimes in GaN and their implications for bipolar devices Bandic ZZ, Bridger PM, Piquette EC, McGill TC
229 - 238	MBE growth of high quality GaN on LiGaO2 for high frequency, high power electronic applications Doolittle WA, Kang SB, Brown A
239 - 244	GaN/AlGaN HBT fabrication Ren F, Han J, Hickman R, Van Hove JM, Chow PP, Klaassen JJ, LaRoche JR, Jung KB, Cho H, Cao XA, Donovan SM, Kopf RF, Wilson RG, Baca AG, Shul RJ, Zhang L, Willison CG, Abernathy CR, Pearton SJ
245 - 252	DC and high-frequency performance of AlGaN/GaN Heterojunction Bipolar Transistors Alekseev E, Pavlidis D
253 - 257	Simulation of the electrical characteristics of AlGaN/GaN heterojunction bipolar transistors Lambert DJH, Lin DE, Dupuis RD
259 - 264	GaN/SiC heterojunction bipolar transistors Schaff WJ, Wu H, Praharaj CJ, Murphy M, Eustis T, Foutz B, Ambacher O, Eastman LF
265 - 270	GaN/SiC HBTs and related issues Van Zeghbroeck B, Chang SS, Waters RL, Torvik J, Pankove J
271 - 275	GaN/SiC heterojunctions grown by LP-CVD Topf M, Cavas F, Meyer BK, Kempf B, Krtschil A, Witte H, Veit P, Christen J
277 - 301	SiC and GaN bipolar power devices Chow TP, Khemka V, Fedison J, Ramungul N, Matocha K, Tang Y, Gutmann RJ
303 - 308	4H-SiC p-n diodes and gate turnoff thyristors for high-power, high-temperature applications Agarwal AK, Seshadri S, MacMillan M, Mani SS, Casady J, Sanger P, Shah P
309 - 315	Characterization and performance comparison of the power DIMOS structure fabricated with a reduced thermal budget in 4H and 6H-SiC Vathulya VR, White MH
317 - 323	Switching characteristics of silicon carbide power PiN diodes Elasser A, Ghezzo M, Krishnamurthy N, Kretchmer J, Clock AW, Brown DM, Chow TP
325 - 340	Comparing SiC switching power devices: MOSFET, NPN transistor and GTO thyristor Huang AQ, Zhang B
341 - 346	Demonstration of the first 4H-SiC avalanche photodiodes Yan F, Zhao JH, Olsen GH
347 - 352	Characterization of 4H-SiC gate turn-off thyristor Cao LH, Li BH, Zhao JH
353 - 358	In-depth analysis of SiC GTO thyristor performance using numerical simulations Shah PB, Jones KA, Agarwal AK, Seshadri S
359 - 368	Electrothermal analysis of SiC power devices using physically-based device simulation Lades M, Wachutka G
369 - 375	Prospects of bipolar diamond devices Aleksov A, Denisenko A, Kohn E
377 - 381	GaNPN junction issues and developments Hickman R, Van Hove JM, Chow PP, Klaassen JJ, Wowchak AM, Polley CJ, King DJ, Ren F, Abernathy CR, Pearton SJ, Jung KB, Cho H, La Roche JR