Solid-State Electronics

Solid-State Electronics, Vol.46, No.12 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (45 articles)

2021 - 2025	Band alignments in sidewall strained Si/strained SiGe heterostructures Wang X, Kencke DL, Liu KC, Register LF, Banerjee SK
2027 - 2033	High-speed Si-based metal-semiconductor-metal photodetectors with an additional composition-graded i-a-Si1-xGex : H layer Lin CS, Yeh RH, Liao CH, Hong JW
2035 - 2039	An analytical model for charge pumping below strong inversion and accumulation Bauza D
2041 - 2044	High-power and low-threshold-current operation of 1.3 mu m strain-compensated AlGaInAs/AlGaInAs multiple-quantum-well laser diodes Lei PH, Wu MY, Lin CC, Ho WJ, Wu MC
2045 - 2051	High-speed limitations of the metal-semiconductor-metal photodiode structures with submicron gap between the interdigitated contacts Averine S, Bondarenko O, Sachot R
2053 - 2061	A study of noise in surface and buried channel SiGe MOSFETs with gate oxide grown by low temperature plasma anodization Lukyanchikova NB, Petrichuk MV, Garbar NP, Riley LS, Hall S
2063 - 2067	Schottky barrier height of a new ohmic contact NiSi2 to n-type 6H-SiC Nakamura T, Satoh M
2069 - 2074	Nitrogen vacancy scattering in GaN grown by metal-organic vapor phase epitaxy Chen Z, Yuan HR, Lu DC, Sun XH, Wan SK, Liu XL, Han PD, Wang XH, Zhu QS, Wang ZG
2075 - 2084	Analytical expressions for intermodulation distortion of a MESFET small-signal amplifier using the nonlinear Volterra series Ahmad IS, Gudimetla VSR
2085 - 2088	The performance of GaAs power MESFET's using backside copper metallization Chen CY, Chang L, Chang EY, Chen SH, Lin YC
2089 - 2097	Intrinsic inversion charge in the mobility region of fully depleted SOI-MOSFETs Wiatr M, Seegebrecht P
2099 - 2104	Deep center passivation in 3C-SiC by hydrogen plasma with a grid for damage suppression Kato M, Sobue F, Ichimura M, Arai E, Yamada N, Tokuda Y, Okumura T
2105 - 2110	Unclamped inductive switching behaviour of high power SOI vertical DMOS transistors with lateral drain contacts Pinardi K, Heinle U, Bengtsson S, Olsson J, Colinge JP
2111 - 2115	A compact large signal model of LDMOS Tang CW, Tong KY
2117 - 2122	ESD protection device design using statistical methods Shigyo N, Kawashima H, Yasuda S
2123 - 2133	Study of novel techniques for reducing self-heating effects in SOI power LDMOS Roig J, Flores D, Hidalgo S, Vellvehi M, Rebollo J, Millan J
2135 - 2139	A new empirical large-signal model for enhancement-mode AlGaAs/InGaAs pHEMTs Lin CK, Wang WK, Chan YJ
2141 - 2146	Interface properties and deep levels in InGaAsN/GaAs and GaAsN/GaAs heterojunctions Polyakov AY, Smirnov NB, Govorkov AV, Botchkarev AE, Nelson NN, Fahmi MME, Griffin JA, Khan A, Mohammad SN, Johnstone DK, Bublik VT, Chsherbatchev KD, Voronova M
2147 - 2153	Optical properties and defects in GaAsN and InGaAsN films and quantum well structures Polyakov AY, Smirnov NB, Govorkov AV, Botchkarev AE, Nelson NN, Fahmi MME, Griffin JA, Khan A, Mohammad SN, Johnstone DK, Bublik VT, Chsherbatchev KD, Voronova MI, Kasatochkin VS
2155 - 2160	Studies of deep centers in dilute GaAsN and InGaAsN films grown by molecular beam epitaxy Polyakov AY, Smirnov NB, Govorkov AV, Botchkarev AE, Nelson NN, Fahmi MME, Griffin JA, Khan A, Mohammad SN, Johnstone DK, Bublik VT, Chsherbatchev KD, Voronova MI, Kasatochkin VS
2161 - 2168	Electrical properties and deep levels in bulk solution grown GaAs crystal Markov AV, Polyakov AY, Smirnov NB, Govorkov AV, Biberin VI, Korovin NS, Gavrin VN, Efimov GD, Kalikhov AV, Kozlova YP, Veretenkin EP, Eremin VK, Verbitskaya EM, Bowles TJ
2169 - 2172	High current bulk GaN Schottky rectifiers Ip K, Baik KH, Luo B, Ren F, Pearton SJ, Park SS, Park YJ, Zhang AP
2173 - 2178	Mb/s data transmission over a RF fiber-optic link using a LiNbO3 microdisk modulator Hossein-Zadeh M, Levi AFJ
2179 - 2183	GaN p-n junction diode formed by Si ion implantation into p-GaN Lee ML, Sheu JK, Yeh LS, Tsai MS, Kao CJ, Tun CJ, Chang SJ, Chi GC
2185 - 2190	The role of cleaning conditions and epitaxial layer structure on reliability of Sc2O3 and MgO passivation on AlGaN/GaN HEMTS Luo B, Mehandru RM, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Fitch RC, Gillespie J, Dellmer R, Jenkins T, Sewell J, Via D, Crespo A
2191 - 2198	A simple efficient model of parasitic capacitances of deep-submicron LDD MOSFETs Pregaldiny F, Lallement C, Mathiot D
2199 - 2208	Numerical modeling of parasitic barrier formation at the SiGe/Si heterojunction due to p-n junction displacement Breed A, Roenker KP, Todorova D
2209 - 2216	A charge sheet model for MOSFETs with an abrupt retrograde channel -Part I. Drain current and body charge Persson S, Hellberg PE, Zhang SL
2217 - 2225	A charge sheet model for MOSFETs with an abrupt retrograde channel -Part II. Charges and intrinsic capacitances Persson S, Hellberg PE, Zhang SL
2227 - 2229	InGaN/GaN MQW p-n junction photodetectors Chiou YZ, Su YK, Chang SJ, Lin YC, Chang CS, Chen CH
2231 - 2235	The effects of NO passivation on the radiation response of SiO2/4H-SiC MOS capacitors Chen TB, Luo ZY, Cressler JD, Isaacs-Smith TF, Williams JR, Chung GL, Clark SD
2237 - 2240	4H-SiC metal-semiconductor-metal ultraviolet photodetectors with Ni/ITO electrodes Su YK, Chiou YZ, Chang CS, Chang SJ, Lin YC, Chen JF
2241 - 2245	Optimised n-channel Si/SiGe HFETs design for V-TH shift immunity Jeamsaksiri W, Velazquez JE, Fobelets K
2247 - 2256	Equilibrium boundary conditions in the double heterostructure opto-electronic switch Cai J, Taylor GW
2257 - 2267	Composition induced design considerations for InP/GaxIn1-xAs heterojunction bipolar transistors Mohammad SN
2269 - 2272	Skin effect of on-chip copper interconnects on electromigration Wu W, Yuan JS
2273 - 2279	Effect of surface preparation on Ni Ohmic contact to 3C-SiC Noh JI, Nahm KS, Kim KC, Capano MA
2281 - 2285	Low-frequency noise analysis of Si/SiGe channel pMOSFETs Li PW, Liao WM
2287 - 2289	A new process to improve the performance of 850 nm wavelength GaAsVCSELs Jiang WJ, Chen LC, Wu MC, Yu HC, Yang HP, Sung CP, Chi JY, Huang CY, Wu YT
2291 - 2294	Investigation of radiative tunneling in GaN/InGaN single quantum well light-emitting diodes Cao XA, LeBoeuf SF, Kim KH, Sandvik PM, Stokes EB, Ebong A, Walker D, Kretchmer J, Lin JY, Jiang HX
2295 - 2300	Extraction method for polycrystalline TFT above and below threshold model parameters Estrada M, Cerdeira A, Ortiz-Conde A, Sanchez FJG, Iniguez B
2301 - 2306	A simple analytical model for the dependence of the propagation delay of the polycrystalline silicon CMOS inverter on temperature Afentakis T, Hatalis M
2307 - 2313	Characterization of ultralow voltage, fully depleted silicon on insulator CMOS device and circuit technology Shang HL, White MH, Adams DA
2315 - 2322	Design of 0.1-mu m pocket n-MOSFETs for low-voltage applications Pang YS, Brews JR
2323 - 2329	The mechanism for the formation of slug flow in vertical gas-liquid two-phase flow Sun BJ, Wang RH, Zhao XX, Yan DC