Solid-State Electronics

Solid-State Electronics, Vol.53, No.1 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (18 articles)

1 - 6	Temperature dependence and thermal stability of planar-integrated enhancement/depletion-mode AlGan/GaN HEMTs and digital circuits Wang RN, Cai Y, Chen KJ
7 - 10	4H-SiC ultraviolet avalanche photodetectors with low breakdown voltage and high gain Zhu HL, Chen XP, Cai JF, Wu ZY
11 - 13	Surface potential equation for bulk MOSFET Gildenblat G, Zhu Z, McAndrew CC
14 - 17	Study of leakage current and breakdown issues in 4H-SiC unterminated Schottky diodes Muzykov PG, Bolotnikov AV, Sudarshan TS
18 - 29	PSP-SOI: An advanced surface potential based compact model of partially depleted SOI MOSFETs for circuit simulations Wu W, Li X, Gildenblat G, Workman GO, Veeraraghavan S, McAndrew CC, van Langevelde R, Smit GDJ, Scholten AJ, Klaassen DBM, Watts J
30 - 35	Fully-depleted Ge interband tunnel transistor: Modeling and junction formation Zhang Q, Sutar S, Kosel T, Seabaugh A
36 - 41	Modeling short-channel effects in channel thermal noise and induced-gate noise in MOSFETs in the NQS regime Vallur S, Jindal RP
42 - 48	Transient charging current measurements and modelling in silicon nanocrystal floating gate devices Beaumont A, Souifi A
49 - 53	A charge-based compact model for predicting the current-voltage and capacitance-voltage characteristics of heavily doped cylindrical surrounding-gate MOSFETs Liu FL, Zhang J, He F, Liu F, Zhang LN, Chan MS
54 - 56	Backscattering coefficient and drift-diffusion mobility extraction in short channel MOS devices Pappas I, Ghibaudo G, Dimitriadis CA, Fenouillet-Beranger C
57 - 62	Modeling of the subthreshold current and subthreshold swing of fully depleted short-channel Si-SOI-MESFETs Jit S, Pandey PK, Tiwari PK
63 - 69	Low voltage charge-balanced capacitance-voltage conversion circuit for one-side-electrode-type fluid-based inclination sensor Bin Abd Manaf A, Matsumoto Y
70 - 78	Electron transport properties of bulk mercury-cadmium-telluride at 77 K Palermo C, Varani L, Vaissiere JC, Starikov E, Shiktorov P, Gruzinskis V, Azais B
79 - 85	Steady state analysis of optical bistability in distributed coupling coefficient DFB semiconductor laser amplifiers Tahvili MS, Sheikhi MH
86 - 94	A computational load-pull method with harmonic loading for high-efficiency investigations Bengtsson O, Vestling L, Olsson J
95 - 101	Relative intensity noise study in the injection-locked integrated electroabsorption modulator-lasers Jin XM, Tarng BY, Chuang SL
102 - 106	Metamorphic In0.7Al0.3As/In0.69Ga0.31As thermophotovoltaic devices grown on graded InAsyP1-y buffers by molecular beam epitaxy Hudait MK, Brenner M, Ringel SA
107 - 116	Analytic resolution of Poisson-Boltzmann equation in nanometric semiconductor junctions Murray H