Solid-State Electronics

Solid-State Electronics, Vol.113 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (29 articles)

1 - 1	Selected papers from ESSDERC 2014 Bez R, Meneghesso G, Pavan P, Zanoni E
2 - 8	FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration Fenouillet-Beranger C, Previtali B, Batude P, Nemouchi F, Casse M, Garros X, Tosti L, Rambal N, Lafond D, Dansas H, Pasini L, Brunet L, Deprat F, Gregoire M, Mellier M, Vinet M
9 - 14	Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation Marino FA, Bisi D, Meneghini M, Verzellesi G, Zanoni E, Van Hove M, You S, Decoutere S, Marcon D, Stoffels S, Ronchi N, Meneghesso G
15 - 21	Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs Rossetto I, Rampazzo F, Gerardin S, Meneghini M, Bagatin M, Zanandrea A, Dua C, di Forte-Poisson MA, Aubry R, Oualli M, Delage SL, Paccagnella A, Meneghesso G, Zanoni E
22 - 27	Novel AlInN/GaN integrated circuits operating up to 500 degrees C Gaska R, Gaevski M, Jain R, Deng J, Islam M, Simin G, Shur M
28 - 34	Physics-based stability analysis of MOS transistors Ferrara A, Steeneken PG, Boksteen BK, Heringa A, Scholten AJ, Schmitz J, Hueting RJE
35 - 41	Local non invasive study of SiC diodes with abnormal electrical behavior Leon J, Perpina X, Vellvehi M, Jorda X, Godignon P
42 - 48	Dual Ground Plane EDMOS in 28 nm FDSOI for 5 V power management applications Litty A, Ortolland S, Golanski D, Cristoloveanu S
49 - 53	High PAE high reliability AlN/GaN double heterostructure Medjdoub F, Zegaoui M, Linge A, Grimbert B, Silvestri R, Meneghini M, Meneghesso G, Zanoni E
54 - 60	A high-sensitivity 135 GHz millimeter-wave imager by compact split-ring-resonator in 65-nm CMOS Li N, Yu H, Yang C, Shang Y, Li XP, Liu X
61 - 67	Analysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulk Carrillo-Nunez H, Luisier M, Schenk A
68 - 72	Hole mobility in InSb-based devices: Dependence on surface orientation, body thickness, and strain Chang PY, Liu XY, Zeng L, Du G
73 - 78	Extraction of roughness parameters at nanometer scale by Monte Carlo simulation of Critical Dimension Scanning Electron Microscopy Ciappa M, Ilgunsatiroglu E, Illarionov AY
79 - 85	InGaAs inversion layers band structure, electrostatics, and mobility modeling based on 8 band (k)over-right-arrow . (p)over-right-arrowtheory Pham AT, Jin S, Choi W, Lee MJ, Cho SH, Kim YT, Lee KH, Park Y
86 - 91	A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs Villani F, Gnani E, Gnudi A, Reggiani S, Baccarani G
92 - 100	Compact model for parametric instability under arbitrary stress waveform Alagi F, Rossetti M, Stella R, Vigano E, Raynaud P
101 - 108	Hybrid Systems in Foil (HySiF) exploiting ultra-thin flexible chips Harendt C, Kostelnik J, Kugler A, Lorenz E, Saller S, Schreivogel A, Yu ZL, Burghartz JN
109 - 115	High-resolution mobility spectrum analysis of magnetoresistance in fully-depleted silicon-on-insulator MOSFETs Umana-Membreno GA, Chang SJ, Bawedin M, Antoszewski J, Cristoloveanu S, Faraone L
116 - 120	Flexible and stretchable electronics for wearable health devices van den Brand J, de Kok M, Koetse M, Cauwe M, Verplancke R, Bossuyt F, Jablonski M, Vanfleteren J
121 - 126	Thermal characterization and modeling of ultra-thin silicon chips Alshahed M, Yu ZL, Rempp H, Richter H, Harendt C, Burghartz JN
127 - 131	Superior performance and Hot Carrier reliability of strained FDSOI nMOSFETs for advanced CMOS technology nodes Besnard G, Garros X, Andrieu F, Nguyen P, Van den Daele W, Reynaud P, Schwarzenbach W, Delprat D, Bourdelle KK, Reimbold G, Cristoloveanu S
132 - 137	Statistical analysis of random telegraph noise in HfO2-based RRAM devices in LRS Puglisi FM, Pavan P, Larcher L, Padovani A
138 - 143	Impact of the array background pattern on cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories Paolucci GM, Bertuccio M, Compagnoni CM, Beltrami S, Spinelli AS, Lacaita AL, Visconti A
144 - 150	Self-consistent simulation on multiple activation energy of retention characteristics in charge trapping flash memory Park S, Choi S, Jun KS, Kim H, Rhee S, Park YJ
151 - 156	Reliability study of organic complementary logic inverters using constant voltage stress Wrachie N, Cester A, Lago N, Rizzo A, D'Alpaos R, Stefani A, Turatti G, Muccini M, Meneghesso G
157 - 166	Nanoelectromechanical digital logic circuits using curved cantilever switches with amorphous-carbon-coated contacts Ayala CL, Grogg D, Bazigos A, Bleiker SJ, Fernandez-Bolanos M, Niklaus F, Hagleitner C
167 - 172	Two dimensional quantum mechanical simulation of low dimensional tunneling devices Alper C, Palestri P, Lattanzio L, Padilla JL, Ionescu AM
173 - 178	Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors Morita Y, Mori T, Migita S, Mizubayashi W, Fukuda K, Matsukawa T, Endo K, O'uchi S, Liu YX, Masahara M, Ota H
179 - 183	Experimental demonstration of improved analog device performance of nanowire-TFETs Schulte-Braucks C, Richter S, Knoll L, Selmi L, Zhao QT, Mantl S